{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,4]],"date-time":"2026-10-04T17:42:35Z","timestamp":1791135755218,"version":"4.1.0"},"reference-count":31,"publisher":"National Academy of Sciences","issue":"25","content-domain":{"domain":["www.pnas.org"],"crossmark-restriction":true},"short-container-title":["Proc. Natl. Acad. Sci. U.S.A."],"published-print":{"date-parts":[[2011,6,21]]},"abstract":"<jats:p>Strong coupling of light with excitons in direct bandgap semiconductors leads to the formation of composite photonic-electronic quasi-particles (polaritons), in which energy oscillates coherently between the photonic and excitonic states with the vacuum Rabi frequency. The light-matter coherence is maintained until the oscillator dephases or the photon escapes. Exciton-polariton formation has enabled the observation of Bose-Einstein condensation in the solid-state, low-threshold polariton lasing and is also useful for terahertz and slow-light applications. However, maintaining coherence for higher carrier concentration and temperature applications still requires increased coupling strengths. Here, we report on size-tunable, exceptionally high exciton-polariton coupling strengths characterized by a vacuum Rabi splitting of up to 200\u00a0meV as well as a reduction in group velocity, in surface-passivated, self-assembled semiconductor nanowire cavities. These experiments represent systematic investigations on light-matter coupling in one-dimensional optical nanocavities, demonstrating the ability to engineer light-matter coupling strengths at the nanoscale, even in non-quantum-confined systems, to values much higher than in bulk.<\/jats:p>","DOI":"10.1073\/pnas.1102212108","type":"journal-article","created":{"date-parts":[[2011,5,31]],"date-time":"2011-05-31T22:20:55Z","timestamp":1306880455000},"page":"10050-10055","update-policy":"https:\/\/doi.org\/10.1073\/pnas.cm10313","source":"Crossref","is-referenced-by-count":91,"title":["One-dimensional polaritons with size-tunable and enhanced coupling strengths in semiconductor nanowires"],"prefix":"10.1073","volume":"108","author":[{"given":"Lambert K.","family":"van Vugt","sequence":"first","affiliation":[{"name":"Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Brian","family":"Piccione","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chang-Hee","family":"Cho","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Pavan","family":"Nukala","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ritesh","family":"Agarwal","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"341","published-online":{"date-parts":[[2011,5,31]]},"reference":[{"key":"e_1_3_3_1_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.15.22"},{"key":"e_1_3_3_2_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.69.3314"},{"key":"e_1_3_3_3_2","volume-title":"Semiconductor Optics","author":"Klingshirn CF","year":"1997","unstructured":"CF Klingshirn Semiconductor Optics (Springer-Verlag, Berlin-Heidelberg-New York, 1997)."},{"key":"e_1_3_3_4_2","volume-title":"Semiconductor Cavity Quantum Electrodynamics","author":"Yamamoto Y","year":"2000","unstructured":"Y Yamamoto, F Tassone, H Cao Semiconductor Cavity Quantum Electrodynamics (Berlin Heidelberg, Springer, 2000)."},{"key":"e_1_3_3_5_2","doi-asserted-by":"publisher","DOI":"10.1038\/nphys227"},{"key":"e_1_3_3_6_2","doi-asserted-by":"publisher","DOI":"10.1038\/nature05131"},{"key":"e_1_3_3_7_2","doi-asserted-by":"publisher","DOI":"10.1126\/science.1140990"},{"key":"e_1_3_3_8_2","doi-asserted-by":"publisher","DOI":"10.1073\/pnas.2634328100"},{"key":"e_1_3_3_9_2","doi-asserted-by":"publisher","DOI":"10.1038\/nature06979"},{"key":"e_1_3_3_10_2","doi-asserted-by":"publisher","DOI":"10.1038\/nphoton.2008.139"},{"key":"e_1_3_3_11_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.102.186402"},{"key":"e_1_3_3_12_2","doi-asserted-by":"publisher","DOI":"10.1038\/nature01939"},{"key":"e_1_3_3_13_2","doi-asserted-by":"publisher","DOI":"10.1038\/nature02969"},{"key":"e_1_3_3_14_2","doi-asserted-by":"publisher","DOI":"10.1038\/nature03119"},{"key":"e_1_3_3_15_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.95.067401"},{"key":"e_1_3_3_16_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.60.13276"},{"key":"e_1_3_3_17_2","first-page":"147401-1","article-title":"Exciton-polaritons confined in a ZnO nanowire cavity","volume":"97","author":"Vugt LKv","year":"2006","unstructured":"LKv Vugt, et al., Exciton-polaritons confined in a ZnO nanowire cavity. Phys Rev Lett 97, 147401-1\u2013147401-4 (2006).","journal-title":"Phys Rev Lett"},{"key":"e_1_3_3_18_2","doi-asserted-by":"publisher","DOI":"10.1038\/25692"},{"key":"e_1_3_3_19_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.75.3906"},{"key":"e_1_3_3_20_2","doi-asserted-by":"publisher","DOI":"10.1021\/nl900371r"},{"key":"e_1_3_3_21_2","first-page":"061115-1","article-title":"Incorporating polaritonic effects in semiconductor nanowire waveguide dispersion","volume":"97","author":"Vugt LKv","year":"2010","unstructured":"LKv Vugt, B Piccione, R Agarwal, Incorporating polaritonic effects in semiconductor nanowire waveguide dispersion. 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