{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,10]],"date-time":"2026-06-10T15:03:43Z","timestamp":1781103823049,"version":"3.54.1"},"reference-count":25,"publisher":"National Academy of Sciences","issue":"2","license":[{"start":{"date-parts":[[2019,12,31]],"date-time":"2019-12-31T00:00:00Z","timestamp":1577750400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"}],"funder":[{"DOI":"10.13039\/100000015","name":"U.S. Department of Energy","doi-asserted-by":"publisher","award":["DE-AC02-05Ch11231"],"award-info":[{"award-number":["DE-AC02-05Ch11231"]}],"id":[{"id":"10.13039\/100000015","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["www.pnas.org"],"crossmark-restriction":true},"short-container-title":["Proc. Natl. Acad. Sci. U.S.A."],"published-print":{"date-parts":[[2020,1,14]]},"abstract":"<jats:p>III\u2013V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III\u2013Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 \u00b0C for indium), previous experiments required a minimum growth temperature of 500 \u00b0C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 \u00b0C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)\u2013coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III\u2013Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and\/or back-end electronics.<\/jats:p>","DOI":"10.1073\/pnas.1915786117","type":"journal-article","created":{"date-parts":[[2019,12,31]],"date-time":"2019-12-31T16:55:12Z","timestamp":1577811312000},"page":"902-906","update-policy":"https:\/\/doi.org\/10.1073\/pnas.cm10313","source":"Crossref","is-referenced-by-count":10,"title":["Shape-controlled single-crystal growth of InP at low temperatures down to 220 \u00b0C"],"prefix":"10.1073","volume":"117","author":[{"given":"Mark","family":"Hettick","sequence":"first","affiliation":[{"name":"Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720;"},{"name":"Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720;"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2108-1490","authenticated-orcid":false,"given":"Hao","family":"Li","sequence":"additional","affiliation":[{"name":"Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720;"},{"name":"Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720;"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6774-2074","authenticated-orcid":false,"given":"Der-Hsien","family":"Lien","sequence":"additional","affiliation":[{"name":"Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720;"},{"name":"Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720;"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Matthew","family":"Yeh","sequence":"additional","affiliation":[{"name":"Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720;"},{"name":"Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720;"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tzu-Yi","family":"Yang","sequence":"additional","affiliation":[{"name":"Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan, Republic of China;"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Matin","family":"Amani","sequence":"additional","affiliation":[{"name":"Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720;"},{"name":"Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720;"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Niharika","family":"Gupta","sequence":"additional","affiliation":[{"name":"Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720;"},{"name":"Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720;"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Daryl C.","family":"Chrzan","sequence":"additional","affiliation":[{"name":"Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720;"},{"name":"Materials Science and Engineering, University of California, Berkeley, CA 94720"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yu-Lun","family":"Chueh","sequence":"additional","affiliation":[{"name":"Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan, Republic of China;"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7214-7931","authenticated-orcid":false,"given":"Ali","family":"Javey","sequence":"additional","affiliation":[{"name":"Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720;"},{"name":"Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720;"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"341","published-online":{"date-parts":[[2019,12,31]]},"reference":[{"key":"e_1_3_4_1_2","doi-asserted-by":"crossref","first-page":"89","DOI":"10.1063\/1.1753975","article-title":"Vapor-liquid-solid mechanism of single crystal growth","volume":"4","author":"Wagner R. 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