{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T00:02:07Z","timestamp":1723161727255},"reference-count":0,"publisher":"Wiley","issue":"4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"funder":[{"name":"CNR","award":["97.00342.CT11","97.04713.CT01"],"award-info":[{"award-number":["97.00342.CT11","97.04713.CT01"]}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[2002,1]]},"abstract":"<jats:p>To accurately describe non\u2010stationary carrier transport in GaAs devices, it is necessary to use Monte Carlo methods or hydrodynamical (or energy transport) models which incorporate population transfer between valleys.We present here simulations of Gunn oscillations in a GaAs diode based on two\u2010valley hydrodynamical models: the classic Bl\u00f8tekj\u00e6r model and two recently developed moment expansion models. Scattering parameters within the models are obtained from homogeneous Monte Carlo simulations, and these are compared against expressions in the literature. Comparisons are made between our hydrodynamical results, existing work, and direct Monte Carlo simulations of the oscillator device.<\/jats:p>","DOI":"10.1080\/1065514021000012291","type":"journal-article","created":{"date-parts":[[2002,11,20]],"date-time":"2002-11-20T15:33:54Z","timestamp":1037806434000},"page":"681-693","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":15,"title":["Two\u2010valley Hydrodynamical Models for Electron Transport in Gallium Arsenide: Simulation of Gunn Oscillations"],"prefix":"10.1155","volume":"15","author":[{"given":"A. Marcello","family":"Anile","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Simon D.","family":"Hern","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[2002,4]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/2002\/476853.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1080\/1065514021000012291","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,8]],"date-time":"2024-08-08T03:07:49Z","timestamp":1723086469000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1080\/1065514021000012291"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2002,1]]},"references-count":0,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2002,1]]}},"alternative-id":["10.1080\/1065514021000012291"],"URL":"https:\/\/doi.org\/10.1080\/1065514021000012291","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[2002,1]]},"assertion":[{"value":"2001-05-01","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2002-04-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}