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Phys.: Condens. Matter"],"published-print":{"date-parts":[[2020,11,4]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    The band structures of the transition metal dichalcogenides (TMD's) 2H-MoS\n                    <jats:sub>2<\/jats:sub>\n                    (0001) and 2H-WSe\n                    <jats:sub>2<\/jats:sub>\n                    (0001), before and after palladium adsorption, were investigated through angle-resolved photoemission. Palladium adsorption on 2H-MoS\n                    <jats:sub>2<\/jats:sub>\n                    (0001) is seen to result in very different band shifts than seen for palladium on 2H-WSe\n                    <jats:sub>2<\/jats:sub>\n                    (0001). The angle resolved photoemission results of palladium adsorbed on WSe\n                    <jats:sub>2<\/jats:sub>\n                    (0001) indicate that palladium accepts electron density from substrate. The resulting band shift will lead to a decrease in the barriers to the hole injection. The opposite band shifts occur upon palladium adsorption between 2H-MoS\n                    <jats:sub>2<\/jats:sub>\n                    (0001). The overall trend is consistent with the deposition of other metals deposited on TMD's, except that for palladium adsorption on MoS\n                    <jats:sub>2<\/jats:sub>\n                    (0001), there is an increase in the MoS\n                    <jats:sub>2<\/jats:sub>\n                    (0001) substrate band gap with palladium adsorption, as is evident from the combination of photoemission and inverse photoemission.\n                  <\/jats:p>","DOI":"10.1088\/1361-648x\/abadde","type":"journal-article","created":{"date-parts":[[2020,8,10]],"date-time":"2020-08-10T18:34:08Z","timestamp":1597084448000},"page":"465001","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":4,"title":["The band shifts in MoS\n                    <sub>2<\/sub>\n                    (0001) and WSe\n                    <sub>2<\/sub>\n                    (0001) induced by palladium adsorption"],"prefix":"10.1088","volume":"32","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-7653-2976","authenticated-orcid":false,"given":"Prescott E","family":"Evans","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2826-4193","authenticated-orcid":false,"given":"Takashi","family":"Komesu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Eike F","family":"Schwier","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shiv","family":"Kumar","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1945-2352","authenticated-orcid":false,"given":"Kenya","family":"Shimada","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2198-4710","authenticated-orcid":false,"given":"Peter A","family":"Dowben","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"266","published-online":{"date-parts":[[2020,8,24]]},"reference":[{"key":"cmabaddebib1","doi-asserted-by":"publisher","DOI":"10.1016\/j.surfcoat.2019.125084","type":"journal-article","article-title":"Role of metal contacts and effect of annealing in high performance 2D WSe2 field-effect transistors","volume":"381","author":"Bandyopadhyay","year":"2020","journal-title":"Surf. 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