{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,22]],"date-time":"2025-10-22T00:29:33Z","timestamp":1761092973113,"version":"build-2065373602"},"reference-count":65,"publisher":"IOP Publishing","issue":"42","license":[{"start":{"date-parts":[[2025,10,21]],"date-time":"2025-10-21T00:00:00Z","timestamp":1761004800000},"content-version":"vor","delay-in-days":1,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2025,10,21]],"date-time":"2025-10-21T00:00:00Z","timestamp":1761004800000},"content-version":"tdm","delay-in-days":1,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"funder":[{"name":"National Science Foundation","award":["2425609"],"award-info":[{"award-number":["2425609"]}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["J. Phys.: Condens. Matter"],"published-print":{"date-parts":[[2025,10,20]]},"abstract":"<jats:title>Abstract<\/jats:title>\n               <jats:p>This perspective article explores the potential of two-dimensional electron and hole gases at oxide\/oxide interfaces as promising conduction channels in energy-efficient spintronic devices for memory and logic applications. Magneto-electric and ferro-electric device architectures are considered, highlighting their advantages in integrating non-volatility with ultra-fast switching capabilities. We emphasize the significance of spin\u2013orbit coupling in generating robust spin currents and examine how the Rashba and inverse Edelstein effects can be harnessed in device operations. Specific heterostructures, including HfO<jats:sub>2<\/jats:sub>\/SrTiO<jats:sub>3<\/jats:sub>, Cr<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub>\/TiO<jats:sub>2-x<\/jats:sub>, and ZrO<jats:sub>2-x<\/jats:sub>-based systems, are reviewed in terms of their material properties, interface stability, and suitability for practical implementation.<\/jats:p>","DOI":"10.1088\/1361-648x\/ae06e2","type":"journal-article","created":{"date-parts":[[2025,9,15]],"date-time":"2025-09-15T22:51:54Z","timestamp":1757976714000},"page":"421501","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":0,"title":["Energy efficient spintronic devices based on 2D electron and hole gases arising at oxide\/oxide interfaces"],"prefix":"10.1088","volume":"37","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-7170-1646","authenticated-orcid":true,"given":"Ather","family":"Mahmood","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7849-4715","authenticated-orcid":true,"given":"M Zaid","family":"Zaz","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6966-9007","authenticated-orcid":true,"given":"Jonathan P","family":"Bird","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jeffrey","family":"Kelber","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0026-0772","authenticated-orcid":true,"given":"Christian","family":"Binek","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2198-4710","authenticated-orcid":true,"given":"Peter A","family":"Dowben","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"266","published-online":{"date-parts":[[2025,10,21]]},"reference":[{"key":"cmae06e2bib1","doi-asserted-by":"publisher","first-page":"1488","DOI":"10.1126\/science.1065389","type":"journal-article","article-title":"Spintronics: a spin-based electronics vision for the future","volume":"294","author":"Wolf","year":"2001","journal-title":"Science"},{"key":"cmae06e2bib2","doi-asserted-by":"publisher","first-page":"35","DOI":"10.1038\/s41586-018-0770-2","type":"journal-article","article-title":"Scalable energy-efficient magnetoelectric spin\u2013orbit logic","volume":"565","author":"Manipatruni","year":"2019","journal-title":"Nature"},{"key":"cmae06e2bib3","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1109\/JXCDC.2018.2809640","type":"journal-article","article-title":"Towards a strong spin\u2013orbit coupling magneto electric transistor","volume":"4","author":"Dowben","year":"2018","journal-title":"IEEE J. Explor. Solid-State Comput. Devices Circuits"},{"key":"cmae06e2bib4","doi-asserted-by":"publisher","first-page":"813","DOI":"10.1038\/nmat2024","type":"journal-article","article-title":"The emergence of spin electronics in data storage","volume":"6","author":"Chappert","year":"2007","journal-title":"Nat. Mater."},{"key":"cmae06e2bib5","doi-asserted-by":"publisher","first-page":"323","DOI":"10.1103\/RevModPhys.76.323","type":"journal-article","article-title":"Spintronics: fundamentals and applications","volume":"76","author":"\u017duti\u0107","year":"2004","journal-title":"Rev. Mod. Phys."},{"key":"cmae06e2bib6","doi-asserted-by":"publisher","first-page":"3","DOI":"10.1109\/JXCDC.2015.2418033","type":"journal-article","article-title":"Benchmarking of beyond-CMOS exploratory devices for logic integrated circuits","volume":"1","author":"Nikonov","year":"2015","journal-title":"IEEE J. Explor. Solid-State Comput. Devices Circuits"},{"key":"cmae06e2bib7","doi-asserted-by":"publisher","first-page":"5","DOI":"10.1038\/s41699-020-00181-1","type":"journal-article","article-title":"Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors","volume":"5","author":"Afzalian","year":"2021","journal-title":"njp 2D Mater. Appl."},{"key":"cmae06e2bib8","doi-asserted-by":"publisher","first-page":"91","DOI":"10.1038\/nature15387","type":"journal-article","article-title":"A subthermionic tunnel field-effect transistor with an atomically thin channel","volume":"526","author":"Sarkar","year":"2015","journal-title":"Nature"},{"key":"cmae06e2bib9","doi-asserted-by":"publisher","DOI":"10.1088\/0953-8984\/24\/7\/072201","type":"journal-article","article-title":"Direct graphene growth on Co3O4 (111) by molecular beam epitaxy","volume":"24","author":"Zhou","year":"2012","journal-title":"J. Phys.: Condens. Matter"},{"key":"cmae06e2bib10","doi-asserted-by":"publisher","DOI":"10.1088\/0953-8984\/23\/7\/072204","type":"journal-article","article-title":"Direct graphene growth on MgO: origin of the band gap","volume":"23","author":"Gaddam","year":"2011","journal-title":"J. Phys.: Condens. Matter"},{"key":"cmae06e2bib11","doi-asserted-by":"publisher","first-page":"251","DOI":"10.1140\/epjb\/e2014-50321-0","type":"journal-article","article-title":"Four-terminal impedance of a graphene nanoribbon based structure","volume":"87","author":"Shi","year":"2014","journal-title":"Eur. Phys. J. B"},{"key":"cmae06e2bib12","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.98.206805","type":"journal-article","article-title":"Energy band-gap engineering of graphene nanoribbons","volume":"98","author":"Han","year":"2007","journal-title":"Phys. Rev. Lett."},{"key":"cmae06e2bib13","doi-asserted-by":"publisher","first-page":"237","DOI":"10.1109\/LED.2009.2039915","type":"journal-article","article-title":"Impact of size effect on graphene nanoribbon transport","volume":"31","author":"Yang","year":"2010","journal-title":"IEEE Electron Device Lett."},{"key":"cmae06e2bib14","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.100.177207","type":"journal-article","article-title":"Spin currents in rough graphene nanoribbons: universal fluctuations and spin injection","volume":"100","author":"Wimmer","year":"2008","journal-title":"Phys. Rev. Lett."},{"key":"cmae06e2bib15","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.88.235432","type":"journal-article","article-title":"Edge scattering of electrons in graphene: Boltzmann equation approach to the transport in graphene nanoribbons and nanodisks","volume":"88","author":"Dugaev","year":"2013","journal-title":"Phys. Rev. B"},{"key":"cmae06e2bib16","doi-asserted-by":"publisher","first-page":"6388","DOI":"10.1039\/C8CS00318A","type":"journal-article","article-title":"Two-dimensional transistors beyond graphene and TMDCs","volume":"47","author":"Liu","year":"2018","journal-title":"Chem. Soc. Rev."},{"key":"cmae06e2bib17","doi-asserted-by":"publisher","first-page":"3770","DOI":"10.1021\/acs.nanolett.9b00901","type":"journal-article","article-title":"Significant phonon drag enables high power factor in the AlGaN\/GaN two-dimensional electron gas","volume":"19","author":"Yalamarthy","year":"2019","journal-title":"Nano Lett."},{"key":"cmae06e2bib18","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201701385","type":"journal-article","article-title":"Interfacial charge engineering in ferroelectric\u2010controlled Mott transistors","volume":"29","author":"Chen","year":"2017","journal-title":"Adv. Mater."},{"key":"cmae06e2bib19","doi-asserted-by":"publisher","first-page":"233","DOI":"10.1016\/0038-1098(90)90963-C","type":"journal-article","article-title":"Spin polarization of conduction electrons induced by electric current in two-dimensional asymmetric electron systems","volume":"73","author":"Edelstein","year":"1990","journal-title":"Solid State Commun."},{"key":"cmae06e2bib20","doi-asserted-by":"publisher","first-page":"1335","DOI":"10.1103\/PhysRevLett.78.1335","type":"journal-article","article-title":"Gate control of spin-orbit interaction in an inverted I0.53Ga0.47As\/In0.52Al0.48As heterostructure","volume":"78","author":"Nitta","year":"1997","journal-title":"Phys. Rev. Lett."},{"key":"cmae06e2bib21","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.104.126803","type":"journal-article","article-title":"Tunable Rashba spin-orbit interaction at oxide interfaces","volume":"104","author":"Caviglia","year":"2010","journal-title":"Phys. Rev. Lett."},{"key":"cmae06e2bib22","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201604447","type":"journal-article","article-title":"Reversible formation of 2D electron gas at the LaFeO3 \/SrTiO3 interface via control of oxygen vacancies","volume":"29","author":"Xu","year":"2017","journal-title":"Adv. Mater."},{"key":"cmae06e2bib23","doi-asserted-by":"publisher","first-page":"728","DOI":"10.1103\/PhysRevLett.60.728","type":"journal-article","article-title":"Spin splitting in semiconductor heterostructures for B\u21920","volume":"60","author":"Lommer","year":"1988","journal-title":"Phys. Rev. Lett."},{"key":"cmae06e2bib24","doi-asserted-by":"publisher","first-page":"1411","DOI":"10.1103\/PhysRevB.39.1411","type":"journal-article","article-title":"Evidence for spin splitting in InxGa1-x\/In0.52Al0.48As","volume":"39","author":"Das","year":"1989","journal-title":"Phys. Rev. B"},{"key":"cmae06e2bib25","doi-asserted-by":"publisher","first-page":"1674","DOI":"10.1038\/s41467-021-21872-3","type":"journal-article","article-title":"Voltage controlled N\u00e9el vector rotation in zero magnetic field","volume":"12","author":"Mahmood","year":"2021","journal-title":"Nat. Commun."},{"key":"cmae06e2bib26","doi-asserted-by":"publisher","first-page":"483","DOI":"10.1038\/s41586-020-2197-9","type":"journal-article","article-title":"Non-volatile electric control of spin\u2013charge conversion in a SrTiO3 Rashba system","volume":"580","author":"No\u00ebl","year":"2020","journal-title":"Nature"},{"key":"cmae06e2bib27","doi-asserted-by":"publisher","first-page":"1174","DOI":"10.1063\/1.1644917","type":"journal-article","article-title":"Ultrafast polarization switching in thin-film ferroelectrics","volume":"84","author":"Li","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"cmae06e2bib28","doi-asserted-by":"publisher","first-page":"938","DOI":"10.1063\/1.1722518","type":"journal-article","article-title":"Switching time in ferroelectric BaTiO3 and its dependence on crystal thickness","volume":"27","author":"Merz","year":"1956","journal-title":"J. Appl. Phys."},{"key":"cmae06e2bib29","doi-asserted-by":"publisher","first-page":"3255","DOI":"10.1063\/1.1729173","type":"journal-article","article-title":"Nucleation and growth of ferroelectric domains in BaTiO 3 at fields from 2 to 450 kV\/cm","volume":"34","author":"Stadler","year":"1963","journal-title":"J. Appl. Phys."},{"key":"cmae06e2bib30","doi-asserted-by":"publisher","first-page":"404","DOI":"10.1038\/s41598-017-18746-4","type":"journal-article","article-title":"Formation of two-dimensional electron gas at amorphous\/crystalline oxide interfaces","volume":"8","author":"Li","year":"2018","journal-title":"Sci. Rep."},{"key":"cmae06e2bib31","doi-asserted-by":"publisher","first-page":"1976","DOI":"10.1002\/adma.201505021","type":"journal-article","article-title":"Universal fabrication of 2D electron systems in functional oxides","volume":"28","author":"R\u00f6del","year":"2016","journal-title":"Adv. Mater."},{"key":"cmae06e2bib32","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.96.041121","type":"journal-article","article-title":"Two-dimensional electron systems in ATiO3 perovskites (A = Ca, Ba, Sr): control of orbital hybridization and order","volume":"96","author":"R\u00f6del","year":"2017","journal-title":"Phys. Rev. B"},{"key":"cmae06e2bib33","doi-asserted-by":"publisher","DOI":"10.1063\/1.4978248","type":"journal-article","article-title":"Scavenging of oxygen from SrTiO3 during oxide thin film deposition and the formation of interfacial 2DEGs","volume":"121","author":"Posadas","year":"2017","journal-title":"J. Appl. Phys."},{"key":"cmae06e2bib34","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.92.041106","type":"journal-article","article-title":"Engineering two-dimensional electron gases at the (001) and (101) surfaces of TiO2 anatase using light","volume":"92","author":"R\u00f6del","year":"2015","journal-title":"Phys. Rev. B"},{"key":"cmae06e2bib35","doi-asserted-by":"publisher","DOI":"10.1063\/1.3549301","type":"journal-article","article-title":"Epitaxial integration of ferromagnetic correlated oxide LaCoO3 with Si (100)","volume":"98","author":"Posadas","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"cmae06e2bib36","doi-asserted-by":"publisher","DOI":"10.1063\/1.4986324","type":"journal-article","article-title":"Inverse spin Hall effects in Nd doped SrTiO3","volume":"7","author":"Wang","year":"2017","journal-title":"AIP Adv."},{"key":"cmae06e2bib37","doi-asserted-by":"publisher","DOI":"10.1063\/1.3634052","type":"journal-article","article-title":"Ferroelectricity in hafnium oxide thin films","volume":"99","author":"B\u00f6scke","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"cmae06e2bib38","doi-asserted-by":"publisher","first-page":"795","DOI":"10.1557\/mrc.2018.175","type":"journal-article","article-title":"Review and perspective on ferroelectric HfO2-based thin films for memory applications","volume":"8","author":"Park","year":"2018","journal-title":"MRS Commun."},{"key":"cmae06e2bib39","doi-asserted-by":"publisher","DOI":"10.1063\/1.4973928","type":"journal-article","article-title":"Enhancing ferroelectricity in dopant-free hafnium oxide","volume":"110","author":"Pal","year":"2017","journal-title":"Appl. Phys. Lett."},{"key":"cmae06e2bib40","doi-asserted-by":"publisher","first-page":"33","DOI":"10.1016\/j.susc.2008.10.025","type":"journal-article","article-title":"Pt interactions with annealed and chemically-etched Nb-doped SrTiO3(001) surfaces: metal\/oxide surface chemical effects on band bending behavior","volume":"603","author":"Vamala","year":"2009","journal-title":"Surf. Sci."},{"key":"cmae06e2bib41","doi-asserted-by":"publisher","first-page":"803","DOI":"10.1021\/acsnano.8b08260","type":"journal-article","article-title":"Gate-controlled metal\u2013insulator transition in TiS nanowire field-effect transistors","volume":"13","author":"Randle","year":"2019","journal-title":"ACS Nano"},{"key":"cmae06e2bib42","doi-asserted-by":"publisher","first-page":"181","DOI":"10.1126\/science.1126230","type":"journal-article","article-title":"Tunneling across a ferroelectric","volume":"313","author":"Tsymbal","year":"2006","journal-title":"Science"},{"key":"cmae06e2bib43","doi-asserted-by":"publisher","first-page":"400","DOI":"10.1016\/j.surfrep.2008.06.002","type":"journal-article","article-title":"Interface effects in spin-polarized metal\/insulator layered structures","volume":"63","author":"Velev","year":"2008","journal-title":"Surf. Sci. Rep."},{"key":"cmae06e2bib44","doi-asserted-by":"publisher","first-page":"4289","DOI":"10.1038\/ncomms5289","type":"journal-article","article-title":"Ferroelectric tunnel junctions for information storage and processing","volume":"5","author":"Garcia","year":"2014","journal-title":"Nat. Commun."},{"key":"cmae06e2bib45","doi-asserted-by":"publisher","first-page":"14797","DOI":"10.1021\/acs.langmuir.9b02654","type":"journal-article","article-title":"Ultrathin Chromia on a hexagonally-ordered d 0 ferromagnet: evidence of interfacial exchange bias at the Cr2O3 \/TiO2\u2013x interface","volume":"35","author":"Ladewig","year":"2019","journal-title":"Langmuir"},{"key":"cmae06e2bib46","doi-asserted-by":"publisher","DOI":"10.1063\/1.4880938","type":"journal-article","article-title":"Increasing the N\u00e9el temperature of magnetoelectric chromia for voltage-controlled spintronics","volume":"104","author":"Street","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"cmae06e2bib47","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6641\/ab8438","type":"journal-article","article-title":"Evolving magneto-electric device technologies","volume":"35","author":"Sharma","year":"2020","journal-title":"Semicond. Sci. Technol."},{"key":"cmae06e2bib48","doi-asserted-by":"publisher","DOI":"10.1063\/1.5141371","type":"journal-article","article-title":"Magneto-electric antiferromagnetic spin\u2013orbit logic devices","volume":"116","author":"Dowben","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"cmae06e2bib49","doi-asserted-by":"publisher","first-page":"217","DOI":"10.1016\/0167-577X(95)00229-4","type":"journal-article","article-title":"MBE growth and characterization of epitaxial TiO2 and Nb-doped TiO2 films","volume":"26","author":"Gao","year":"1996","journal-title":"Mater. Lett."},{"key":"cmae06e2bib50","doi-asserted-by":"publisher","DOI":"10.1038\/srep28871","type":"journal-article","article-title":"Charge storage in oxygen deficient phases of TiO2: defect physics without defects","volume":"6","author":"Padilha","year":"2016","journal-title":"Sci. Rep."},{"key":"cmae06e2bib51","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201606165","type":"journal-article","article-title":"Multi-nonvolatile state resistive switching arising from ferroelectricity and oxygen vacancy migration","volume":"29","author":"L\u00fc","year":"2017","journal-title":"Adv. Mater."},{"key":"cmae06e2bib52","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201900852","type":"journal-article","article-title":"Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions","volume":"6","author":"Sulzbach","year":"2020","journal-title":"Adv. Electron. Mater."},{"key":"cmae06e2bib53","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201970029","type":"journal-article","article-title":"Memory devices: an electric\u2010field\u2010controlled high\u2010speed coexisting multibit memory and Boolean logic operations in manganite nanowire via local gating (Adv. Electron. Mater. 6\/2019)","volume":"5","author":"Shi","year":"2019","journal-title":"Adv. Electron. Mater."},{"key":"cmae06e2bib54","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.14.044045","type":"journal-article","article-title":"Key role of oxygen-vacancy electromigration in the memristive response of ferroelectric devices","volume":"14","author":"Ferreyra","year":"2020","journal-title":"Phys. Rev. Appl."},{"key":"cmae06e2bib55","doi-asserted-by":"publisher","first-page":"5739","DOI":"10.1038\/s41598-018-23967-2","type":"journal-article","article-title":"Effect of Nb concentration on the spin-orbit coupling strength in Nb-doped SrTiO3 epitaxial thin films","volume":"8","author":"Cho","year":"2018","journal-title":"Sci. Rep."},{"key":"cmae06e2bib56","doi-asserted-by":"publisher","first-page":"1112","DOI":"10.1016\/j.matchemphys.2011.12.083","type":"journal-article","article-title":"Dopant induced changes in structural and optical properties of Cr3+ doped TiO2 nanoparticles","volume":"132","author":"Choudhury","year":"2012","journal-title":"Mater. Chem. Phys."},{"key":"cmae06e2bib57","doi-asserted-by":"publisher","DOI":"10.1007\/b13586","type":"journal-article","volume":"vol","author":"Winkler","year":"2003","journal-title":"Spin\u2014Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems"},{"key":"cmae06e2bib58","doi-asserted-by":"publisher","first-page":"13659","DOI":"10.1021\/acsami.6b02399","type":"journal-article","article-title":"Creating two-dimensional electron gas in polar\/polar perovskite oxide heterostructures: first-principles characterization of LaAlO3 \/A + B5+ O3","volume":"8","author":"Wang","year":"2016","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"cmae06e2bib59","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/ab9d98","type":"journal-article","article-title":"The 2020 magnetism roadmap","volume":"53","author":"Vedmedenko","year":"2020","journal-title":"J. Phys. D: Appl. Phys."},{"key":"cmae06e2bib60","doi-asserted-by":"publisher","first-page":"502","DOI":"10.1007\/s11434-010-4309-7","type":"journal-article","article-title":"Epitaxial growth of ultrathin ZrO2(111) films on Pt(111)","volume":"56","author":"Gao","year":"2011","journal-title":"Chin. Sci. Bull."},{"key":"cmae06e2bib61","doi-asserted-by":"crossref","first-page":"7276","DOI":"10.1103\/PhysRevB.43.7267","type":"journal-article","article-title":"Electronic structure of cubic and tetragonal zirconia","volume":"43","author":"Jansen","year":"1991","journal-title":"Phys. Rev. B"},{"key":"cmae06e2bib62","doi-asserted-by":"publisher","first-page":"390\u22129","DOI":"10.1021\/acsami.5b09107","type":"journal-article","article-title":"Creating two-dimensional electron gas in nonpolar\/nonpolar oxide interface via polarization discontinuity: first-principles analysis of CaZrO3\/SrTiO3 heterostructure","volume":"8","author":"Nazir","year":"2016","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"cmae06e2bib63","doi-asserted-by":"publisher","DOI":"10.1063\/1.4918940","type":"journal-article","article-title":"Magnetoelectric switching of perpendicular exchange bias in Pt\/Co\/\u03b1-Cr2O3\/Pt stacked films","volume":"106","author":"Toyoki","year":"2015","journal-title":"Appl. Phys. Lett"},{"key":"cmae06e2bib64","doi-asserted-by":"publisher","first-page":"922","DOI":"10.1021\/acs.nanolett.6b04247","type":"journal-article","article-title":"Polarization-mediated modulation of electronic and transport properties of hybrid MoS2\u2014BaTiO3\u2014SrRuO3 tunnel junctions","volume":"17","author":"Li","year":"2017","journal-title":"Nano Lett."},{"key":"cmae06e2bib65","doi-asserted-by":"publisher","first-page":"0024","DOI":"10.34133\/adi.0024","type":"journal-article","article-title":"Spintronics phenomena of two-dimensional electron gas at oxide interfaces Adv","volume":"4","author":"Chen","year":"2023","journal-title":"Devices Instrum"}],"container-title":["Journal of Physics: Condensed Matter"],"original-title":[],"link":[{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae06e2","content-type":"text\/html","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae06e2\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae06e2","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae06e2\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae06e2\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae06e2\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae06e2\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"similarity-checking"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae06e2\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,21]],"date-time":"2025-10-21T10:05:19Z","timestamp":1761041119000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae06e2"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,10,20]]},"references-count":65,"journal-issue":{"issue":"42","published-online":{"date-parts":[[2025,10,21]]},"published-print":{"date-parts":[[2025,10,20]]}},"URL":"https:\/\/doi.org\/10.1088\/1361-648x\/ae06e2","relation":{},"ISSN":["0953-8984","1361-648X"],"issn-type":[{"type":"print","value":"0953-8984"},{"type":"electronic","value":"1361-648X"}],"subject":[],"published":{"date-parts":[[2025,10,20]]},"assertion":[{"value":"Energy efficient spintronic devices based on 2D electron and hole gases arising at oxide\/oxide interfaces","name":"article_title","label":"Article Title"},{"value":"Journal of Physics: Condensed Matter","name":"journal_title","label":"Journal Title"},{"value":"paper","name":"article_type","label":"Article Type"},{"value":"\u00a9 2025 The Author(s). Published by IOP Publishing Ltd","name":"copyright_information","label":"Copyright Information"},{"value":"2025-06-14","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2025-09-15","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2025-10-21","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}