{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,11,11]],"date-time":"2026-11-11T16:01:00Z","timestamp":1794412860630,"version":"4.9.1"},"reference-count":53,"publisher":"IOP Publishing","issue":"10","license":[{"start":{"date-parts":[[2026,3,9]],"date-time":"2026-03-09T00:00:00Z","timestamp":1773014400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/publishingsupport.iopscience.iop.org\/iop-standard\/v1"},{"start":{"date-parts":[[2026,3,9]],"date-time":"2026-03-09T00:00:00Z","timestamp":1773014400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"funder":[{"DOI":"10.13039\/501100004735","name":"Hunan Provincial Natural Science Foundation of China","doi-asserted-by":"crossref","award":["2017JJ2217"],"award-info":[{"award-number":["2017JJ2217"]}],"id":[{"id":"10.13039\/501100004735","id-type":"DOI","asserted-by":"crossref"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"crossref","award":["11664010"],"award-info":[{"award-number":["11664010"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["J. Phys.: Condens. Matter"],"published-print":{"date-parts":[[2026,3,13]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    Based on first-principles calculations, we comprehensively investigate the geometric structure, electronic and optical properties of the MoTe\n                    <jats:sub>2<\/jats:sub>\n                    \/SnC Van der Waals heterostructure (vdWH). Six distinct stacking configurations of the MoTe\n                    <jats:sub>2<\/jats:sub>\n                    \/SnC vdWH are constructed based on various alignment methods. A3 configuration behaves type-I band alignment, while the other five configurations show type-II alignment. The most stable B2 configuration exhibits type-II band alignment with a direct band gap of 0.85 eV. Biaxial strain and electric fields induce the transition from direct to indirect bandgap semiconductors, and enable rapid conversion from type-II to type-I band alignment. The heterostructure achieves a peak optical absorption coefficient of 24%. Both the absorption intensity and spectral absorption range can be effectively tuned by applying biaxial strain and electric fields. The theoretical power conversion efficiency is up to 13.10%. The present results suggest a possible theoretical framework for high-performance optoelectronic applications of the MoTe\n                    <jats:sub>2<\/jats:sub>\n                    \/SnC vdWH.\n                  <\/jats:p>","DOI":"10.1088\/1361-648x\/ae4b7d","type":"journal-article","created":{"date-parts":[[2026,2,27]],"date-time":"2026-02-27T22:52:57Z","timestamp":1772232777000},"page":"105301","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":1,"title":["Biaxial strain and electric field modulated band alignment and optical properties of the MoTe\n                    <sub>2<\/sub>\n                    \/SnC van der Waals heterostructure"],"prefix":"10.1088","volume":"38","author":[{"given":"Hongxi","family":"Li","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Changqing","family":"Xiang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-6363-7361","authenticated-orcid":true,"given":"Dandan","family":"Tian","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0006-9928-7401","authenticated-orcid":true,"given":"Hairui","family":"Bao","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wenhu","family":"Liao","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2026,3,9]]},"reference":[{"key":"cmae4b7dbib1","doi-asserted-by":"publisher","first-page":"666","DOI":"10.1126\/science.1102896","type":"journal-article","article-title":"Electric field effect in atomically thin carbon films","volume":"306","author":"Novoselov","year":"2004","journal-title":"Science"},{"key":"cmae4b7dbib2","doi-asserted-by":"publisher","first-page":"699","DOI":"10.1038\/nnano.2012.193","type":"journal-article","article-title":"Electronics and optoelectronics of two-dimensional transition metal dichalcogenides","volume":"7","author":"Wang","year":"2012","journal-title":"Nat. Nanotechnol."},{"key":"cmae4b7dbib3","doi-asserted-by":"publisher","first-page":"3209","DOI":"10.1021\/nl1022139","type":"journal-article","article-title":"Large scale growth and characterization of atomic hexagonal boron nitride layers","volume":"10","author":"Song","year":"2010","journal-title":"Nano Lett."},{"key":"cmae4b7dbib4","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202103393","type":"journal-article","article-title":"Ten years of progress in the synthesis and development of MXenes","volume":"33","author":"Naguib","year":"2021","journal-title":"Adv. Mater."},{"key":"cmae4b7dbib5","doi-asserted-by":"publisher","first-page":"5775","DOI":"10.1021\/acsnano.1c03161","type":"journal-article","article-title":"MXenes: two-dimensional building blocks for future materials and devices","volume":"15","author":"Gogotsi","year":"2021","journal-title":"ACS Nano"},{"key":"cmae4b7dbib6","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202203889","type":"journal-article","article-title":"2D organic materials: status and challenges","volume":"10","author":"Yan","year":"2023","journal-title":"Adv. Sci."},{"key":"cmae4b7dbib7","doi-asserted-by":"publisher","first-page":"426","DOI":"10.1038\/s42254-024-00728-x","type":"journal-article","article-title":"A new family of septuple-layer 2D materials of MoSi2N4-like crystals","volume":"6","author":"Latychevskaia","year":"2024","journal-title":"Nat. Rev. Phys."},{"key":"cmae4b7dbib8","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.102.236804","type":"journal-article","article-title":"Two- and one-dimensional honeycomb structures of silicon and germanium","volume":"102","author":"Cahangirov","year":"2009","journal-title":"Phys. Rev. Lett."},{"key":"cmae4b7dbib9","doi-asserted-by":"publisher","first-page":"3112","DOI":"10.1002\/anie.201411246","type":"journal-article","article-title":"Atomically thin arsenene and antimonene: semimetal-semiconductor and indirect-direct band-gap transitions","volume":"54","author":"Zhang","year":"2015","journal-title":"Angew. Chem., Int. Ed. Engl."},{"key":"cmae4b7dbib10","doi-asserted-by":"publisher","DOI":"10.1063\/5.0197944","type":"journal-article","article-title":"High carrier mobility in organic cations intercalated multilayer MoS2","volume":"124","author":"Yu","year":"2024","journal-title":"Appl. Phys. Lett."},{"key":"cmae4b7dbib11","doi-asserted-by":"publisher","DOI":"10.1088\/2053-1583\/ad1ae7","type":"journal-article","article-title":"Recent progress on degradation mechanism and antioxidation of low-dimensional black phosphorus","volume":"11","author":"Fu","year":"2024","journal-title":"2D Mater."},{"key":"cmae4b7dbib12","doi-asserted-by":"publisher","first-page":"12289","DOI":"10.1039\/C7TC04697A","type":"journal-article","article-title":"Two-dimensional van der Waals heterojunctions for functional materials and devices","volume":"5","author":"Hu","year":"2017","journal-title":"J. Mater. Chem. C"},{"key":"cmae4b7dbib13","doi-asserted-by":"publisher","first-page":"962","DOI":"10.3390\/nano8110962","type":"journal-article","article-title":"Optical properties of graphene\/MoS2 heterostructure: first principles calculations","volume":"8","author":"Qiu","year":"2018","journal-title":"Nanomaterials"},{"key":"cmae4b7dbib14","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202421525","type":"journal-article","article-title":"High-performance infrared self-powered photodetector based on 2D van der Waals heterostructures","volume":"35","author":"Liu","year":"2025","journal-title":"Adv. Funct. Mater."},{"key":"cmae4b7dbib15","doi-asserted-by":"publisher","first-page":"4083","DOI":"10.1021\/acsphotonics.4c00896","type":"journal-article","article-title":"Locally phase-engineered MoTe2 for near-infrared photodetectors","volume":"11","author":"Hidding","year":"2024","journal-title":"ACS Photonics"},{"key":"cmae4b7dbib16","doi-asserted-by":"publisher","first-page":"e236","DOI":"10.1002\/sus2.236","type":"journal-article","article-title":"Advances in two-dimensional molybdenum ditelluride (MoTe2): a comprehensive review of properties, preparation methods, and applications","volume":"4","author":"Shinde","year":"2024","journal-title":"SusMater"},{"key":"cmae4b7dbib17","doi-asserted-by":"publisher","first-page":"13","DOI":"10.1063\/5.0046207","type":"journal-article","article-title":"Gate-tunable van der Waals heterostructure based on semimetallic WTe2 and semiconducting MoTe2","volume":"118","author":"Xie","year":"2021","journal-title":"Appl. Phys. Lett."},{"key":"cmae4b7dbib18","doi-asserted-by":"publisher","first-page":"3781","DOI":"10.1021\/acsaelm.1c00281","type":"journal-article","article-title":"Strain-induced spatially resolved charge transport in 2H-MoTe2","volume":"3","author":"Maiti","year":"2021","journal-title":"ACS Appl. Electron. Mater."},{"key":"cmae4b7dbib19","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.91.205415","type":"journal-article","article-title":"Double resonance Raman modes in monolayer and few-layer MoTe2","volume":"91","author":"Guo","year":"2015","journal-title":"Phys. Rev. B"},{"key":"cmae4b7dbib20","doi-asserted-by":"publisher","first-page":"18334","DOI":"10.1021\/acsnano.4c02207","type":"journal-article","article-title":"Defect engineering of MoTe2 via thiol treatment for type III van der Waals heterojunction phototransistor","volume":"18","author":"Jeong","year":"2024","journal-title":"ACS Nano"},{"key":"cmae4b7dbib21","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202407931","type":"journal-article","article-title":"Polarized photodetectors based on 2D 2H-MoTe2\/1T\u2019-MoTe2\/MoSe2 van der Waals heterojunction","volume":"34","author":"Pan","year":"2024","journal-title":"Adv. Funct. Mater."},{"key":"cmae4b7dbib22","doi-asserted-by":"publisher","DOI":"10.1002\/advs.201902923","type":"journal-article","article-title":"High-performance thermoelectric SnSe: aqueous synthesis, innovations, and challenges","volume":"7","author":"Shi","year":"2020","journal-title":"Adv. Sci."},{"key":"cmae4b7dbib23","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/ac6e9e","type":"journal-article","article-title":"Z-scheme SnC\/HfS2 van der Waals heterojunction increases photocatalytic overall water splitting","volume":"55","author":"Dai","year":"2022","journal-title":"J. Appl. Phys."},{"key":"cmae4b7dbib24","doi-asserted-by":"publisher","first-page":"1045","DOI":"10.1039\/C9CP05811G","type":"journal-article","article-title":"Investigation of the mechanism of overall water splitting in UV-visible and infrared regions with SnC\/arsenene vdW heterostructures in different configurations","volume":"22","author":"Chai","year":"2020","journal-title":"Phys. Chem. Chem. Phys."},{"key":"cmae4b7dbib25","doi-asserted-by":"publisher","first-page":"10062","DOI":"10.1039\/c2jm30915g","type":"journal-article","article-title":"Tuning the indirect-direct band gap transition of SiC, GeC and SnC monolayer in a graphene-like honeycomb structure by strain engineering: a quasiparticle GW study","volume":"22","author":"L\u00fc","year":"2012","journal-title":"J. Mater. Chem."},{"key":"cmae4b7dbib26","doi-asserted-by":"publisher","first-page":"13","DOI":"10.1103\/PhysRevB.110.045406","type":"journal-article","article-title":"Tensile strain induced enhancement of lattice thermal conductivity and its origin in two-dimensional SnC","volume":"110","author":"Wei","year":"2024","journal-title":"Phys. Rev. B"},{"key":"cmae4b7dbib27","doi-asserted-by":"publisher","first-page":"3832","DOI":"10.1002\/celc.202001039","type":"journal-article","article-title":"Adsorption and diffusion of potassium on 2D SnC sheets for potential high-performance anodic applications of potassium-ion batteries","volume":"7","author":"Rehman","year":"2020","journal-title":"Chem. Electron. Chem."},{"key":"cmae4b7dbib28","doi-asserted-by":"publisher","DOI":"10.1088\/1361-648X\/ad2a0a","type":"journal-article","article-title":"Crucial role of interfacial interaction in 2D polar SiGe\/GeC heterostructures","volume":"36","author":"Alharbi","year":"2024","journal-title":"J. Phys.: Condens. Matter"},{"key":"cmae4b7dbib29","doi-asserted-by":"publisher","first-page":"4866","DOI":"10.1039\/D3NR05453E","type":"journal-article","article-title":"Achieving highly efficient 2D SnC monolayer-based photocatalyst for water splitting via a synergistic strategy of S-scheme heterostructure construction and silicon doping","volume":"16","author":"Yang","year":"2024","journal-title":"Nanoscale"},{"key":"cmae4b7dbib30","doi-asserted-by":"publisher","first-page":"11169","DOI":"10.1103\/PhysRevB.54.11169","type":"journal-article","article-title":"Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set","volume":"54","author":"Kresse","year":"1996","journal-title":"Phys. Rev. B"},{"key":"cmae4b7dbib31","doi-asserted-by":"publisher","first-page":"1758","DOI":"10.1103\/PhysRevB.59.1758","type":"journal-article","article-title":"From ultrasoft pseudopotentials to the projector augmented-wave method","volume":"59","author":"Kresse","year":"1999","journal-title":"Phys. Rev. B"},{"key":"cmae4b7dbib32","doi-asserted-by":"publisher","first-page":"3865","DOI":"10.1103\/PhysRevLett.77.3865","type":"journal-article","article-title":"Generalized gradient approximation made simple","volume":"77","author":"Perdew","year":"1996","journal-title":"Phys. Rev. Lett."},{"key":"cmae4b7dbib33","doi-asserted-by":"publisher","first-page":"3107","DOI":"10.1088\/0022-3719\/10\/16\/019","type":"journal-article","article-title":"A technique for relativistic spin-polarised calculations","volume":"10","author":"Koelling","year":"1977","journal-title":"J Phys C"},{"key":"cmae4b7dbib34","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/j.scriptamat.2015.07.021","type":"journal-article","article-title":"First principles phonon calculations in materials science","volume":"108","author":"Togo","year":"2015","journal-title":"Scr. Mater."},{"key":"cmae4b7dbib35","doi-asserted-by":"publisher","DOI":"10.1016\/j.cpc.2021.108033","type":"journal-article","article-title":"VASPKIT: a user-friendly interface facilitating high-throughput computing and analysis using VASP code","volume":"267","author":"Wang","year":"2021","journal-title":"Comput. Phys. Commun."},{"key":"cmae4b7dbib36","doi-asserted-by":"publisher","first-page":"1272","DOI":"10.1107\/S0021889811038970","type":"journal-article","article-title":"VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data","volume":"44","author":"Momma","year":"2011","journal-title":"Appl. Crystallogr."},{"key":"cmae4b7dbib37","doi-asserted-by":"publisher","DOI":"10.1016\/j.mtcomm.2024.109297","type":"journal-article","article-title":"Modulation of electronic and optical properties of Bi2Se3\/MoTe2 heterostructure by vertical strain and external electric field","volume":"39","author":"Wu","year":"2024","journal-title":"Mater. Today Commun."},{"key":"cmae4b7dbib38","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2022.153756","type":"journal-article","article-title":"Vertical strain and twist induced tunability on electronic and optical properties of Janus HfSSe\/SnC van der Waals heterostructure","volume":"598","author":"Chen","year":"2022","journal-title":"Appl. Surf. Sci."},{"key":"cmae4b7dbib39","doi-asserted-by":"publisher","DOI":"10.1016\/j.rinp.2021.105172","type":"journal-article","article-title":"A type-II PtS2\/MoTe2 van der Waals heterostructure with adjustable electronic and optical properties","volume":"33","author":"Yin","year":"2022","journal-title":"Results Phys."},{"key":"cmae4b7dbib40","type":"journal-article","article-title":"Unusual fermi-level pinning and ohmic contact engineering for Janus TMD heterojunctions from an electronegativity perspective","volume":"127","author":"Liu","year":"2025","journal-title":"Appl. Phys. Lett."},{"key":"cmae4b7dbib41","doi-asserted-by":"publisher","DOI":"10.1002\/pssb.202200441","type":"journal-article","article-title":"Bulk modulus, elastic constants, and force constants of interatomic bonds of II\u2013III2-VI2 compounds","volume":"260","author":"Mamedova","year":"2023","journal-title":"Phys. Status Solidi b"},{"key":"cmae4b7dbib42","doi-asserted-by":"publisher","first-page":"650","DOI":"10.1007\/s00339-024-07824-w","type":"journal-article","article-title":"Modulation of band structure and optical properties of InSe\/ZnSe vertical van der Waals heterojunction under external electric field and Biaxial strain","volume":"130","author":"Yin","year":"2024","journal-title":"Appl. Phys. A"},{"key":"cmae4b7dbib43","doi-asserted-by":"publisher","first-page":"421","DOI":"10.1007\/s00339-024-07583-8","type":"journal-article","article-title":"Alsalhi S A and Khan A A 2024 Strain-induced electronic, optical and thermoelectric properties of SiC-CrX2 (X=S, Se) heterostructures","volume":"130","author":"Khan","year":"2024","journal-title":"Appl. Phys. A"},{"key":"cmae4b7dbib44","doi-asserted-by":"publisher","DOI":"10.1088\/1367-2630\/ad3c65","type":"journal-article","article-title":"Tunable band alignment and optical properties in van der Waals heterostructures based on two-dimensional materials Janus-MoSSe and C3N4","volume":"26","author":"Pei","year":"2024","journal-title":"New J. Phys."},{"key":"cmae4b7dbib45","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/ad97c7","type":"journal-article","article-title":"Strain regulation of the photoelectric performance of 2D InSe-AlAs vdW heterojunction: a DFT study","volume":"58","author":"Yan","year":"2024","journal-title":"J. Appl. Phys."},{"key":"cmae4b7dbib46","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2023.157007","type":"journal-article","article-title":"Electronic structure and carrier mobility of BC6N\/BN van der Waals heterostructure induced by in-plane strains","volume":"623","author":"Jiang","year":"2023","journal-title":"Appl. Surf. Sci."},{"key":"cmae4b7dbib47","doi-asserted-by":"publisher","first-page":"301","DOI":"10.1016\/j.commatsci.2019.01.010","type":"journal-article","article-title":"Tuning the electronic structure of GeC\/WS2 van der Waals heterostructure by electric field and strain: a first principles study","volume":"160","author":"Shi","year":"2019","journal-title":"Comput. Mater. Sci."},{"key":"cmae4b7dbib48","doi-asserted-by":"publisher","first-page":"1256","DOI":"10.1016\/j.ijhydene.2024.09.255","type":"journal-article","article-title":"Tunable electronic and optical properties of a type-II GaP\/SiH van der Waals heterostructure as photocatalyst: a first-principles study","volume":"88","author":"Bao","year":"2024","journal-title":"Int. J. Hydrog. Energy"},{"key":"cmae4b7dbib49","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2022.156095","type":"journal-article","article-title":"NbS2\/MoSi2P4 van der Waals heterojunction: flexibly tunable electrical contact properties and potential applications for Schottky junction devices","volume":"636","author":"Li","year":"2023","journal-title":"Appl. Surf. Sci."},{"key":"cmae4b7dbib50","doi-asserted-by":"publisher","DOI":"10.1002\/smll.201703293","type":"journal-article","article-title":"High-performance photovoltaic detector based on MoTe2\/MoS2 van der Waals heterostructure","volume":"14","author":"Chen","year":"2018","journal-title":"Small"},{"key":"cmae4b7dbib51","doi-asserted-by":"publisher","first-page":"789","DOI":"10.1002\/adma.200501717","type":"journal-article","article-title":"Heeger A J and Brabec C J 2006 design rules for donors in bulk-heterojunction solar cells-towards 10% energy-conversion efficiency","volume":"18","author":"Scharber","year":"2006","journal-title":"Adv. Mater."},{"key":"cmae4b7dbib52","doi-asserted-by":"publisher","DOI":"10.1016\/j.mtcomm.2024.110012","type":"journal-article","article-title":"Biaxial strain-modulated power conversion efficiency, electronic structures, and optical properties of type-II MoS2\/BC6N vdW heterostructure: a density functional theory study","volume":"40","author":"Jin","year":"2024","journal-title":"Mater. Today Commun."},{"key":"cmae4b7dbib53","doi-asserted-by":"publisher","first-page":"12666","DOI":"10.1021\/acs.jpcc.9b03359","type":"journal-article","article-title":"Solar energy harvesting in type-II van der Waals heterostructures of semiconducting group-III monochalcogenide monolayers","volume":"123","author":"Rawat","year":"2019","journal-title":"J. Phys. Chem. C"}],"container-title":["Journal of Physics: Condensed Matter"],"original-title":[],"link":[{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae4b7d","content-type":"text\/html","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae4b7d\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae4b7d","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae4b7d\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae4b7d\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae4b7d\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae4b7d\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"similarity-checking"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae4b7d\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,3,9]],"date-time":"2026-03-09T11:37:40Z","timestamp":1773056260000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-648X\/ae4b7d"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,3,9]]},"references-count":53,"journal-issue":{"issue":"10","published-online":{"date-parts":[[2026,3,9]]},"published-print":{"date-parts":[[2026,3,13]]}},"URL":"https:\/\/doi.org\/10.1088\/1361-648x\/ae4b7d","relation":{},"ISSN":["0953-8984","1361-648X"],"issn-type":[{"value":"0953-8984","type":"print"},{"value":"1361-648X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,3,9]]},"assertion":[{"value":"Biaxial strain and electric field modulated band alignment and optical properties of the MoTe\n                      2\n                      \/SnC van der Waals heterostructure","name":"article_title","label":"Article Title"},{"value":"Journal of Physics: Condensed Matter","name":"journal_title","label":"Journal Title"},{"value":"paper","name":"article_type","label":"Article Type"},{"value":"\u00a9 2026 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.","name":"copyright_information","label":"Copyright Information"},{"value":"2025-12-07","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2026-02-27","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2026-03-09","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}