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Phys.: Condens. Matter"],"published-print":{"date-parts":[[2026,3,27]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    Van der Waals ferroelectric tunnel junctions (FTJs) based on two-dimensional (2D) materials offer a promising platform for next-generation nonvolatile memory, yet achieving ultrahigh tunneling electroresistance (TER) remains a critical challenge. This work demonstrates a giant TER effect of 5.83 \u00d7 10\n                    <jats:sup>9<\/jats:sup>\n                    % in a vertically stacked FTJ comprising out-of-plane ferroelectric monolayers Sc\n                    <jats:sub>2<\/jats:sub>\n                    CO\n                    <jats:sub>2<\/jats:sub>\n                    and Y\n                    <jats:sub>2<\/jats:sub>\n                    CO\n                    <jats:sub>2<\/jats:sub>\n                    . First-principles calculations and quantum transport simulations reveal that the TER originates from interfacial work-function engineering. In the\n                    <jats:italic>P<\/jats:italic>\n                    <jats:sub>\u2193\u2193<\/jats:sub>\n                    state, a substantial work-function difference (\u0394\n                    <jats:italic>W<\/jats:italic>\n                    = 2.35 eV) drives significant charge transfer and yielding high conductance. Conversely, the\n                    <jats:italic>P<\/jats:italic>\n                    <jats:sub>\u2193\u2191<\/jats:sub>\n                    configuration exhibits a smaller \u0394\n                    <jats:italic>W<\/jats:italic>\n                    (0.85 eV), insufficient to overcome the Sc\n                    <jats:sub>2<\/jats:sub>\n                    CO\n                    <jats:sub>2<\/jats:sub>\n                    band gap. These findings not only propose Sc\n                    <jats:sub>2<\/jats:sub>\n                    CO\n                    <jats:sub>2<\/jats:sub>\n                    \/Y\n                    <jats:sub>2<\/jats:sub>\n                    CO\n                    <jats:sub>2<\/jats:sub>\n                    as an exceptional candidate for high-performance memory devices but also establish a general interfacial design strategy for achieving colossal TER in low-dimensional ferroelectric systems.\n                  <\/jats:p>","DOI":"10.1088\/1361-648x\/ae529e","type":"journal-article","created":{"date-parts":[[2026,3,16]],"date-time":"2026-03-16T22:54:21Z","timestamp":1773701661000},"page":"125703","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":2,"title":["Interfacial work-function engineering for giant tunneling electroresistance in a Sc\n                    <sub>2<\/sub>\n                    CO\n                    <sub>2<\/sub>\n                    \/Y\n                    <sub>2<\/sub>\n                    CO\n                    <sub>2<\/sub>\n                    van der Waals ferroelectric tunnel junction"],"prefix":"10.1088","volume":"38","author":[{"ORCID":"https:\/\/orcid.org\/0009-0003-2529-1481","authenticated-orcid":true,"given":"Shiying","family":"He","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shuhong","family":"Xie","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0000-2864-0905","authenticated-orcid":true,"given":"Daifeng","family":"Zou","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2026,3,25]]},"reference":[{"key":"cmae529ebib1","doi-asserted-by":"publisher","first-page":"418","DOI":"10.1039\/C2TC00097K","type":"journal-article","volume":"1","author":"Yuan","year":"2013","journal-title":"J. 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