{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,20]],"date-time":"2026-10-20T12:57:16Z","timestamp":1792501036729,"version":"4.5.0"},"reference-count":46,"publisher":"IOP Publishing","issue":"13","license":[{"start":{"date-parts":[[2026,4,1]],"date-time":"2026-04-01T00:00:00Z","timestamp":1775001600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/publishingsupport.iopscience.iop.org\/iop-standard\/v1"},{"start":{"date-parts":[[2026,4,1]],"date-time":"2026-04-01T00:00:00Z","timestamp":1775001600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"},{"start":{"date-parts":[[2026,4,1]],"date-time":"2026-04-01T00:00:00Z","timestamp":1775001600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/publishingsupport.iopscience.iop.org\/questions\/alternative-author-rights-policies\/"},{"start":{"date-parts":[[2026,4,1]],"date-time":"2026-04-01T00:00:00Z","timestamp":1775001600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/publishingsupport.iopscience.iop.org\/questions\/alternative-author-rights-policies\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"crossref","award":["11604125"],"award-info":[{"award-number":["11604125"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["J. Phys.: Condens. Matter"],"published-print":{"date-parts":[[2026,4,3]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    The development of all-two-dimensional van der Waals (vdW) magnetic tunnel junctions (MTJs) hold great promise for next-generation spintronic devices. Here, we propose a fully vdW MTJ composed of ferromagnetic Fe\n                    <jats:sub>3<\/jats:sub>\n                    GaTe\n                    <jats:sub>2<\/jats:sub>\n                    (FGT) as electrodes and a monolayer Ga\n                    <jats:sub>2<\/jats:sub>\n                    Ge\n                    <jats:sub>2<\/jats:sub>\n                    Te\n                    <jats:sub>2<\/jats:sub>\n                    (GGT) as the insulating barrier. Through first-principles quantum transport calculations, we demonstrate that the FGT\/GGT\/FGT heterostructure exhibits a giant tunnel magnetoresistance (TMR) ratio of 9.15 \u00d7 10\n                    <jats:sup>6<\/jats:sup>\n                    % and nearly perfect spin polarization (\u223c99.5%) at equilibrium. The high-performance stems from the strong spin polarization of FGT around the\n                    <jats:italic>K<\/jats:italic>\n                    point and the wide bandgap of GGT near the same momentum region, which collectively suppress unpolarized carrier transmission. Furthermore, the lattice mismatch between FGT and GGT is only 1.5%, and their stacking sequences are symmetry-compatible, leading to atomically sharp interfaces that minimize spin scattering. Spin-resolved local density of states profiles further illustrate the mechanism for high TMR: in the parallel state, a pronounced spin-up density extends across the junction, supporting a low-resistance conducting path, while the spin-down channel and both channels in the anti-parallel state show negligible density within the barrier, indicating high-resistance tunneling states. In addition, the TMR is electrically tunable by bias voltage and remains above 4000% at low biases (&lt;300 mV), indicating robust performance under operational conditions. These results highlight FGT\/GGT\/FGT as a highly promising system for room-temperature spin valves.\n                  <\/jats:p>","DOI":"10.1088\/1361-648x\/ae55ef","type":"journal-article","created":{"date-parts":[[2026,3,23]],"date-time":"2026-03-23T22:54:25Z","timestamp":1774306465000},"page":"135302","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":1,"title":["Fe\n                    <sub>3<\/sub>\n                    GaTe\n                    <sub>2<\/sub>\n                    \/Ga\n                    <sub>2<\/sub>\n                    Ge\n                    <sub>2<\/sub>\n                    Te\n                    <sub>2<\/sub>\n                    \/Fe\n                    <sub>3<\/sub>\n                    GaTe\n                    <sub>2<\/sub>\n                    : a promising van der Waals magnetic tunnel junction with giant tunnel magnetoresistance"],"prefix":"10.1088","volume":"38","author":[{"given":"Jianyu","family":"Yuan","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xuelong","family":"Jian","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1817-5039","authenticated-orcid":true,"given":"Longhua","family":"Li","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2026,4,1]]},"reference":[{"key":"cmae55efbib1","doi-asserted-by":"publisher","first-page":"408","DOI":"10.1038\/s41565-019-0438-6","type":"journal-article","volume":"14","author":"Gibertini","year":"2019","journal-title":"Nat. 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All rights, including for text and data mining, AI training, and similar technologies, are reserved.","name":"copyright_information","label":"Copyright Information"},{"value":"2025-12-02","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2026-03-23","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2026-04-01","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}