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Phys.: Condens. Matter"],"published-print":{"date-parts":[[2026,11,6]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    Gallium oxide (Ga\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    ) has emerged as a promising candidate for next-generation power electronics due to its ultra-wide-bandgap and superior critical breakdown field. The emergent spontaneous polarization and ferroelectric characteristics of\n                    <jats:italic>\u03f5<\/jats:italic>\n                    (\n                    <jats:italic>\u03ba<\/jats:italic>\n                    )\u2010Ga\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    are anticipated to enable the development of advanced power devices with both low power consumption and high efficiency. In this review, we describe the development on the physical properties and power electronic device applications of\n                    <jats:italic>\u03f5<\/jats:italic>\n                    (\n                    <jats:italic>\u03ba<\/jats:italic>\n                    )-Ga\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    , covering its crystal structure and polarization properties, optical characteristics, thermal transport behavior, and electrical properties. Then, we highlight recent progress in\n                    <jats:italic>\u03f5<\/jats:italic>\n                    (\n                    <jats:italic>\u03ba<\/jats:italic>\n                    )-Ga\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    -based power electronic devices, with particular focus on Schottky barrier diodes,\n                    <jats:italic>p<\/jats:italic>\n                    \u2013\n                    <jats:italic>n<\/jats:italic>\n                    heterojunctions diodes, and metal\u2013oxide\u2013semiconductor field-effect transistors.\n                  <\/jats:p>","DOI":"10.1088\/1361-648x\/aeb51d","type":"journal-article","created":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T22:55:30Z","timestamp":1792104930000},"page":"443003","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":0,"title":["Recent progress in physical properties and power electronic applications of\n                    <i>\u03f5<\/i>\n                    (\n                    <i>\u03ba<\/i>\n                    )-Ga\n                    <sub>2<\/sub>\n                    O\n                    <sub>3<\/sub>"],"prefix":"10.1088","volume":"38","author":[{"ORCID":"https:\/\/orcid.org\/0009-0000-2003-9517","authenticated-orcid":true,"given":"Yanfang","family":"Zhang","sequence":"first","affiliation":[{"name":"Wuxi University of Technology"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0000-3416-2751","authenticated-orcid":true,"given":"Jinggang","family":"Hao","sequence":"additional","affiliation":[{"name":"Nanjing University"},{"name":"Nanjing University of Industry Technology"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0442-8680","authenticated-orcid":true,"given":"Conggui","family":"Huang","sequence":"additional","affiliation":[{"name":"Wuxi University of Technology"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2026,11,3]]},"reference":[{"key":"cmaeb51dbib1","doi-asserted-by":"publisher","first-page":"155","DOI":"10.1038\/s44287-024-00135-5","type":"journal-article","article-title":"Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality","volume":"2","author":"Zhang","year":"2025","journal-title":"Nat. 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