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A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski\u2013Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.<\/jats:p>","DOI":"10.1088\/1361-6528\/aa9fdd","type":"journal-article","created":{"date-parts":[[2018,1,5]],"date-time":"2018-01-05T05:17:59Z","timestamp":1515129479000},"page":"054002","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":17,"title":["Comparative analysis of germanium\u2013silicon quantum dots formation on Si(100), Si(111) and Sn\/Si(100) surfaces"],"prefix":"10.1088","volume":"29","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-4029-8353","authenticated-orcid":false,"given":"Kirill","family":"Lozovoy","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Andrey","family":"Kokhanenko","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Alexander","family":"Voitsekhovskii","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"266","published-online":{"date-parts":[[2018,1,5]]},"reference":[{"key":"nanoaa9fddbib1","doi-asserted-by":"publisher","first-page":"1943","DOI":"10.1103\/PhysRevLett.64.1943","type":"journal-article","article-title":"Dislocation-free Stranski\u2013Krastanov growth of Ge on Si(100)","volume":"64","author":"Eaglesham","year":"1990","journal-title":"Phys. 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