{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,27]],"date-time":"2026-09-27T09:38:52Z","timestamp":1790501932952,"version":"4.1.0"},"reference-count":39,"publisher":"IOP Publishing","issue":"21","license":[{"start":{"date-parts":[[2018,3,27]],"date-time":"2018-03-27T00:00:00Z","timestamp":1522108800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/publishingsupport.iopscience.iop.org\/iop-standard\/v1"},{"start":{"date-parts":[[2018,3,27]],"date-time":"2018-03-27T00:00:00Z","timestamp":1522108800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"crossref","award":["NRF-2015R1A2A1A10052324"],"award-info":[{"award-number":["NRF-2015R1A2A1A10052324"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["Nanotechnology"],"published-print":{"date-parts":[[2018,5,25]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS\n                    <jats:sub>2<\/jats:sub>\n                    ) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS\n                    <jats:sub>2<\/jats:sub>\n                    thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS\n                    <jats:sub>2<\/jats:sub>\n                    thin film by annealing at 450 \u00b0C for 1 h in H\n                    <jats:sub>2<\/jats:sub>\n                    S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS\n                    <jats:sub>2<\/jats:sub>\n                    thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 10\n                    <jats:sup>5<\/jats:sup>\n                    and 10\n                    <jats:sup>4<\/jats:sup>\n                    cm\n                    <jats:sup>\u22121<\/jats:sup>\n                    in the visible region, respectively. In addition, SnS and SnS\n                    <jats:sub>2<\/jats:sub>\n                    thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS\n                    <jats:sub>2<\/jats:sub>\n                    directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS\n                    <jats:sub>2<\/jats:sub>\n                    thin films exhibited on\u2013off drain current ratios of 8.8 and 2.1 \u00d7 10\n                    <jats:sup>3<\/jats:sup>\n                    and mobilities of 0.21 and 0.014 cm\n                    <jats:sup>2<\/jats:sup>\n                    V\n                    <jats:sup>\u22121<\/jats:sup>\n                    s\n                    <jats:sup>\u22121<\/jats:sup>\n                    , respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS\n                    <jats:sub>2<\/jats:sub>\n                    thin films were 6.0\u00a0\u00d7\u00a010\n                    <jats:sup>16<\/jats:sup>\n                    and 8.7\u00a0\u00d7\u00a010\n                    <jats:sup>13<\/jats:sup>\n                    cm\n                    <jats:sup>\u22123<\/jats:sup>\n                    , respectively, in this experiment.\n                  <\/jats:p>","DOI":"10.1088\/1361-6528\/aab3c1","type":"journal-article","created":{"date-parts":[[2018,3,2]],"date-time":"2018-03-02T14:45:10Z","timestamp":1520001910000},"page":"215201","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":85,"title":["Fabrication of high crystalline SnS and SnS\n                    <sub>2<\/sub>\n                    thin films, and their switching device characteristics"],"prefix":"10.1088","volume":"29","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-1284-4115","authenticated-orcid":false,"given":"Hyeongsu","family":"Choi","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jeongsu","family":"Lee","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Seokyoon","family":"Shin","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Juhyun","family":"Lee","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Seungjin","family":"Lee","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2007-5267","authenticated-orcid":false,"given":"Hyunwoo","family":"Park","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sejin","family":"Kwon","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Namgue","family":"Lee","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Minwook","family":"Bang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Seung-Beck","family":"Lee","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyeongtag","family":"Jeon","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2018,3,27]]},"reference":[{"key":"nanoaab3c1bib1","doi-asserted-by":"publisher","first-page":"1792","DOI":"10.1021\/cm990005z","type":"journal-article","article-title":"Atmospheric pressure chemical vapor deposition of tin sulfides (SnS, Sn2S3, and SnS2) on glass","volume":"11","author":"Price","year":"1999","journal-title":"Chem. 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All rights, including for text and data mining, AI training, and similar technologies, are reserved.","name":"copyright_information","label":"Copyright Information"},{"value":"2017-11-21","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2018-03-02","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2018-03-27","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}