{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,30]],"date-time":"2026-06-30T16:53:09Z","timestamp":1782838389722,"version":"3.54.5"},"reference-count":33,"publisher":"IOP Publishing","issue":"23","license":[{"start":{"date-parts":[[2018,4,11]],"date-time":"2018-04-11T00:00:00Z","timestamp":1523404800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/publishingsupport.iopscience.iop.org\/iop-standard\/v1"},{"start":{"date-parts":[[2018,4,11]],"date-time":"2018-04-11T00:00:00Z","timestamp":1523404800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"funder":[{"name":"Helmholtz-Gemeinschaft","award":["VI-530"],"award-info":[{"award-number":["VI-530"]}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["Nanotechnology"],"published-print":{"date-parts":[[2018,6,8]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed\/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV\u2013visible light and UV-laser), we demonstrate facile fabrication of high performance In\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance\n                    <jats:italic>p<\/jats:italic>\n                    -type semiconductors, which can be bypassed using unipolar logics from high mobility\n                    <jats:italic>n<\/jats:italic>\n                    -type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.\n                  <\/jats:p>","DOI":"10.1088\/1361-6528\/aab7a2","type":"journal-article","created":{"date-parts":[[2018,3,19]],"date-time":"2018-03-19T08:45:27Z","timestamp":1521449127000},"page":"235205","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":27,"title":["High performance printed oxide field-effect transistors processed using photonic curing"],"prefix":"10.1088","volume":"29","author":[{"given":"Suresh Kumar","family":"Garlapati","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Gabriel Cadilha","family":"Marques","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Julia Susanne","family":"Gebauer","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Simone","family":"Dehm","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Michael","family":"Bruns","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Markus","family":"Winterer","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mehdi Baradaran","family":"Tahoori","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jasmin","family":"Aghassi-Hagmann","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Horst","family":"Hahn","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3952-2952","authenticated-orcid":false,"given":"Subho","family":"Dasgupta","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2018,4,11]]},"reference":[{"key":"nanoaab7a2bib1","doi-asserted-by":"publisher","author":"Yan","year":"2008","DOI":"10.1201\/9781420052824","type":"book"},{"key":"nanoaab7a2bib2","doi-asserted-by":"publisher","first-page":"25","DOI":"10.1007\/978-3-642-03462-6_2","type":"book","article-title":"Breakthrough towards the internet of things","author":"Chaves","year":"2011"},{"key":"nanoaab7a2bib3","doi-asserted-by":"publisher","first-page":"1220","DOI":"10.1039\/C3TC31765J","type":"journal-article","article-title":"Materials capability and device performance in flexible electronics for the internet of things","volume":"2","author":"Zhan","year":"2014","journal-title":"J. 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All rights, including for text and data mining, AI training, and similar technologies, are reserved.","name":"copyright_information","label":"Copyright Information"},{"value":"2017-12-28","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2018-03-19","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2018-04-11","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}