{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,21]],"date-time":"2026-04-21T00:47:34Z","timestamp":1776732454926,"version":"3.51.2"},"reference-count":58,"publisher":"IOP Publishing","issue":"28","license":[{"start":{"date-parts":[[2023,5,2]],"date-time":"2023-05-02T00:00:00Z","timestamp":1682985600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/publishingsupport.iopscience.iop.org\/iop-standard\/v1"},{"start":{"date-parts":[[2023,5,2]],"date-time":"2023-05-02T00:00:00Z","timestamp":1682985600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"crossref","award":["11874424"],"award-info":[{"award-number":["11874424"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"crossref"}]},{"name":"Science and Technology Innovation Program of Hunan Province","award":["2021RC4026"],"award-info":[{"award-number":["2021RC4026"]}]},{"DOI":"10.13039\/501100016307","name":"NSAF","doi-asserted-by":"crossref","award":["U1830206"],"award-info":[{"award-number":["U1830206"]}],"id":[{"id":"10.13039\/501100016307","id-type":"DOI","asserted-by":"crossref"}]},{"DOI":"10.13039\/501100012166","name":"National Key R&D Program of China","doi-asserted-by":"crossref","award":["2017YFA0403200"],"award-info":[{"award-number":["2017YFA0403200"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["Nanotechnology"],"published-print":{"date-parts":[[2023,7,9]]},"abstract":"Abstract<\/jats:title>\n The anisotropic transport properties of gallium telluride (GaTe) have been reported by several experiments, giving rise to many debates recently. The anisotropic electronic band structure of GaTe shows the extreme difference between the flat band and tilted band in two distinct directions, \n \n\n<\/jats:tex-math>\n \n \n \n \u0393<\/mml:mi>\n <\/mml:mrow>\n \n \u00af<\/mml:mo>\n <\/mml:mrow>\n <\/mml:mover>\n <\/mml:math>\n \n <\/jats:inline-formula> - \n \n\n<\/jats:tex-math>\n \n \n \n X<\/mml:mi>\n <\/mml:mrow>\n \n \u00af<\/mml:mo>\n <\/mml:mrow>\n <\/mml:mover>\n <\/mml:math>\n \n <\/jats:inline-formula> and \n \n\n<\/jats:tex-math>\n \n \n \n \u0393<\/mml:mi>\n <\/mml:mrow>\n \n \u00af<\/mml:mo>\n <\/mml:mrow>\n <\/mml:mover>\n <\/mml:math>\n \n <\/jats:inline-formula> - \n \n\n<\/jats:tex-math>\n \n \n \n Y<\/mml:mi>\n <\/mml:mrow>\n \n \u00af<\/mml:mo>\n <\/mml:mrow>\n <\/mml:mover>\n <\/mml:math>\n \n <\/jats:inline-formula>, and which we called as the mixed flat-tilted band (MFTB). Focusing on such two directions, the relaxation of photo-generated carriers has been studied using the non-adiabatic molecular dynamics (NAMD) method to investigate the anisotropic behavior of ultrafast dynamics. The results show that the relaxation lifetime is different in flat band direction and tilted band direction, which is evidence for the existence of anisotropic behavior of the ultrafast dynamic, and such anisotropic behavior comes from the different intensities of electron\u2013phonon coupling of the flat band and tilted band. Furthermore, the ultrafast dynamic behavior is found to be affected strongly by spin\u2013orbit coupling (SOC) and such anisotropic behavior of the ultrafast dynamic can be reversed by SOC. The tunable anisotropic ultrafast dynamic behavior of GaTe is expected to be detected in ultrafast spectroscopy experiments and it may provide a tunable application in nanodevice design. The results may also provide a reference for the investigation of MFTB semiconductors.<\/jats:p>","DOI":"10.1088\/1361-6528\/acccff","type":"journal-article","created":{"date-parts":[[2023,4,14]],"date-time":"2023-04-14T18:22:20Z","timestamp":1681496540000},"page":"285703","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":3,"title":["Strongly anisotropic ultrafast dynamic behavior of GaTe dominated by the tilted and flat bands"],"prefix":"10.1088","volume":"34","author":[{"given":"Peiran","family":"Zhang","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shen","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kang","family":"Lai","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0006-6165-7016","authenticated-orcid":true,"given":"Lingxiao","family":"Lei","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1349-0999","authenticated-orcid":true,"given":"Zhenfa","family":"Zheng","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Dongdong","family":"Kang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zengxiu","family":"Zhao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7423-7500","authenticated-orcid":true,"given":"Jiayu","family":"Dai","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"266","published-online":{"date-parts":[[2023,5,2]]},"reference":[{"key":"nanoacccffbib1","doi-asserted-by":"publisher","first-page":"4335","DOI":"10.1088\/0305-4470\/25\/16\/011","type":"journal-article","article-title":"Exact ground states for the hubbard model on the kagome lattice","volume":"25","author":"Mielke","year":"1992","journal-title":"J. Phys. A: Math. Gen."},{"key":"nanoacccffbib2","doi-asserted-by":"publisher","first-page":"R17296","DOI":"10.1103\/PhysRevB.54.R17296","type":"journal-article","article-title":"Hofstadter butterflies for flat bands","volume":"54","author":"Aoki","year":"1996","journal-title":"Phys. Rev. B"},{"key":"nanoacccffbib3","doi-asserted-by":"publisher","first-page":"412","DOI":"10.1016\/S0022-4596(03)00239-1","type":"journal-article","article-title":"The origin of a flat band","volume":"176","author":"Deng","year":"2003","journal-title":"J. Solid State Chem."},{"key":"nanoacccffbib4","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.99.070401","type":"journal-article","article-title":"Flat bands and wigner crystallization in the honeycomb optical lattice","volume":"99","author":"Wu","year":"2007","journal-title":"Phys. Rev. Lett."},{"key":"nanoacccffbib5","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.85.155451","type":"journal-article","article-title":"Coexistence of spin- 12 and spin-1 Dirac \u2013 Weyl fermions in the edge-centered honeycomb lattice","volume":"85","author":"Lan","year":"2012","journal-title":"Phys. Rev. B"},{"key":"nanoacccffbib6","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.112.116402","type":"journal-article","article-title":"Direct observation of dirac cones and a flatband in a honeycomb lattice for polaritons","volume":"112","author":"Jacqmin","year":"2014","journal-title":"Phys. Rev. Lett."},{"key":"nanoacccffbib7","doi-asserted-by":"publisher","DOI":"10.1088\/0034-4885\/79\/8\/084502","type":"journal-article","article-title":"Foundations of heavy-fermion superconductivity: lattice Kondo effect and mott physics","volume":"79","author":"Steglich","year":"2016","journal-title":"Rep. Prog. Phys."},{"key":"nanoacccffbib8","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.114.245504","type":"journal-article","article-title":"Observation of a localized flat-band state in a photonic Lieb lattice","volume":"114","author":"Mukherjee","year":"2015","journal-title":"Phys. Rev. Lett."},{"key":"nanoacccffbib9","doi-asserted-by":"publisher","first-page":"462","DOI":"10.1103\/PhysRev.158.462","type":"journal-article","article-title":"Excitonic insulator","volume":"158","author":"J\u00e9rome","year":"1967","journal-title":"Phys. Rev."},{"key":"nanoacccffbib10","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.103.026402","type":"journal-article","article-title":"Excitonic insulator state in Ta 2NiSe 5 probed by photoemission spectroscopy","volume":"103","author":"Wakisaka","year":"2009","journal-title":"Phys. Rev. Lett."},{"key":"nanoacccffbib11","doi-asserted-by":"publisher","DOI":"10.1088\/1742-6596\/400\/3\/032035","type":"journal-article","article-title":"Electronic structure of Ta 2NiSe 5 as a candidate for excitonic insulators","volume":"400","author":"Kaneko","year":"2012","journal-title":"J. Phys. Conf. Ser"},{"key":"nanoacccffbib12","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.92.041104","type":"journal-article","article-title":"Anisotropic magnetotransport and exotic longitudinal linear magnetoresistance in WTe2 crystals","volume":"92","author":"Zhao","year":"2015","journal-title":"Phys. Rev. B"},{"key":"nanoacccffbib13","doi-asserted-by":"publisher","DOI":"10.1063\/1.2960628","type":"journal-article","article-title":"Real-time, local basis-set implementation of time-dependent density functional theory for excited state dynamics simulations","volume":"129","author":"Meng","year":"2008","journal-title":"J. Chem. Phys."},{"key":"nanoacccffbib14","doi-asserted-by":"publisher","first-page":"1238","DOI":"10.1021\/nl100442e","type":"journal-article","article-title":"Electron and hole dynamics in dye-sensitized solar cells: influencing factors and systematic trends","volume":"10","author":"Meng","year":"2010","journal-title":"Nano Lett."},{"key":"nanoacccffbib15","doi-asserted-by":"publisher","DOI":"10.1002\/adts.201800055","type":"journal-article","article-title":"Photoexcitation in solids: first-principles quantum simulations by real-time TDDFT","volume":"1","author":"Lian","year":"2018","journal-title":"Adv. Theory Simul."},{"key":"nanoacccffbib16","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/ab0daf","type":"journal-article","article-title":"Enhanced excitation and emission from 2D transition metal dichalcogenides with all-dielectric nanoantennas","volume":"30","author":"Lepeshov","year":"2019","journal-title":"Nanotechnology"},{"key":"nanoacccffbib17","doi-asserted-by":"publisher","first-page":"258","DOI":"10.1088\/0957-4484\/13\/3\/304","type":"journal-article","article-title":"A tunnelling spectroscopy study on the single-particle energy levels and electron\u2013electron interactions in CdSe quantum dots","volume":"13","author":"Bakkers","year":"2002","journal-title":"Nanotechnology"},{"key":"nanoacccffbib18","doi-asserted-by":"publisher","first-page":"145","DOI":"10.1038\/s41565-018-0323-8","type":"journal-article","article-title":"Giant intrinsic photoresponse in pristine graphene","volume":"14","author":"Ma","year":"2019","journal-title":"Nat. Nanotechnol."},{"key":"nanoacccffbib19","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.abf3759","type":"journal-article","article-title":"Real-time GW-BSE investigations on spin-valley exciton dynamics in monolayer transition metal dichalcogenide","volume":"7","author":"Jiang","year":"2021","journal-title":"Sci. Adv."},{"key":"nanoacccffbib20","doi-asserted-by":"publisher","first-page":"1099","DOI":"10.1088\/0957-4484\/17\/4\/042","type":"journal-article","article-title":"Size effect on the electron\u2013phonon coupling in CuO nanocrystals","volume":"17","author":"Fan","year":"2006","journal-title":"Nanotechnology"},{"key":"nanoacccffbib21","doi-asserted-by":"publisher","first-page":"765","DOI":"10.1038\/nnano.2015.143","type":"journal-article","article-title":"Strongly enhanced charge-density-wave order in monolayer NbSe 2","volume":"10","author":"Xi","year":"2015","journal-title":"Nat. Nanotechnol."},{"key":"nanoacccffbib22","doi-asserted-by":"publisher","first-page":"8755","DOI":"10.1021\/acs.nanolett.2c03689","type":"journal-article","article-title":"Ultrafast spontaneous localization of a Jahn-Teller exciton polaron in two-dimensional semiconducting CrI3 by symmetry breaking","volume":"22","author":"Li","year":"2022","journal-title":"Nano Lett."},{"key":"nanoacccffbib23","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/18\/47\/475403","type":"journal-article","article-title":"Magnetic-field-induced charge current in quantum wells with spin\u2013orbit coupling","volume":"18","author":"Lyu","year":"2007","journal-title":"Nanotechnology"},{"key":"nanoacccffbib24","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/18\/41\/415705","type":"journal-article","article-title":"Effect of spin\u2013orbit interaction on the electronic and optical properties of ultrathin bismuth nanowires\u2014a density functional approach","volume":"18","author":"Agrawal","year":"2007","journal-title":"Nanotechnology"},{"key":"nanoacccffbib25","doi-asserted-by":"publisher","first-page":"1455","DOI":"10.1103\/PhysRev.102.1455","type":"journal-article","article-title":"Copper in germanium: recombination center and trapping center","volume":"102","author":"Shulman","year":"1956","journal-title":"Phys. Rev."},{"key":"nanoacccffbib26","doi-asserted-by":"publisher","first-page":"1168","DOI":"10.1103\/PhysRev.105.1168","type":"journal-article","article-title":"Properties of gold-doped silicon","volume":"105","author":"Collins","year":"1957","journal-title":"Phys. Rev."},{"key":"nanoacccffbib27","doi-asserted-by":"publisher","first-page":"835","DOI":"10.1103\/PhysRev.87.835","type":"journal-article","article-title":"Statistics of the recombinations of holes and electrons","volume":"87","author":"Shockley","year":"1952","journal-title":"Phys. Rev."},{"key":"nanoacccffbib28","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.aaw7453","type":"journal-article","article-title":"Low-frequency lattice phonons in halide perovskites explain high defect tolerance toward electron\u2013hole recombination","volume":"6","author":"Chu","year":"2020","journal-title":"Sci. Adv."},{"key":"nanoacccffbib29","doi-asserted-by":"publisher","first-page":"4662","DOI":"10.1021\/acs.jpclett.0c01300","type":"journal-article","article-title":"Tuning the carrier lifetime in black phosphorene through family atom doping","volume":"11","author":"Guo","year":"2020","journal-title":"J. Phys. Chem. Lett."},{"key":"nanoacccffbib30","doi-asserted-by":"publisher","first-page":"103","DOI":"10.1038\/s42005-019-0202-0","type":"journal-article","article-title":"Tailoring exciton dynamics of monolayer transition metal dichalcogenides by interfacial electron\u2013phonon coupling","volume":"2","author":"Nie","year":"2019","journal-title":"Commun. Phys."},{"key":"nanoacccffbib31","doi-asserted-by":"publisher","first-page":"12885","DOI":"10.1021\/am502830m","type":"journal-article","article-title":"Origin of high photocatalytic properties in the mixed-phase TiO2: a first-principles theoretical study","volume":"6","author":"Ju","year":"2014","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"nanoacccffbib32","doi-asserted-by":"publisher","first-page":"372","DOI":"10.1038\/nnano.2014.35","type":"journal-article","article-title":"Black phosphorus field-effect transistors","volume":"9","author":"Li","year":"2014","journal-title":"Nat. Nanotechnol."},{"key":"nanoacccffbib33","doi-asserted-by":"publisher","first-page":"373","DOI":"10.1038\/nature13184","type":"journal-article","article-title":"Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals","volume":"508","author":"Zhao","year":"2014","journal-title":"Nature"},{"key":"nanoacccffbib34","doi-asserted-by":"publisher","first-page":"6991","DOI":"10.1038\/ncomms7991","type":"journal-article","article-title":"Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors","volume":"6","author":"Liu","year":"2015","journal-title":"Nat. Commun."},{"key":"nanoacccffbib35","doi-asserted-by":"publisher","first-page":"1101","DOI":"10.1016\/0038-1098(76)90790-0","type":"journal-article","article-title":"Electroreflectance in GaSe1\u2013x Te x solid solutions","volume":"20","author":"Lemos","year":"1976","journal-title":"Solid State Commun."},{"key":"nanoacccffbib36","doi-asserted-by":"publisher","first-page":"99","DOI":"10.1016\/0038-1098(78)90336-8","type":"journal-article","article-title":"Transport anisotropy in GaTe","volume":"28","author":"Gouskov","year":"1978","journal-title":"Solid State Commun."},{"key":"nanoacccffbib37","doi-asserted-by":"publisher","first-page":"575","DOI":"10.1016\/0038-1098(77)90036-9","type":"journal-article","article-title":"Hall effect in GaTe single crystals","volume":"21","author":"Augelli","year":"1977","journal-title":"Solid State Commun."},{"key":"nanoacccffbib38","doi-asserted-by":"publisher","first-page":"725","DOI":"10.1016\/0038-1098(95)00608-7","type":"journal-article","article-title":"Growth, characterisation and electrical anisotropy in layered chalcogenides GaTe and InTe","volume":"97","author":"Pal","year":"1996","journal-title":"Solid State Commun."},{"key":"nanoacccffbib39","doi-asserted-by":"publisher","first-page":"18719","DOI":"10.1039\/C6CP01963C","type":"journal-article","article-title":"Thickness-induced structural phase transformation of layered gallium telluride","volume":"18","author":"Zhao","year":"2016","journal-title":"Phys. Chem. Chem. Phys."},{"key":"nanoacccffbib40","doi-asserted-by":"publisher","first-page":"15270","DOI":"10.1039\/D0CP02600J","type":"journal-article","article-title":"First-principles study on the anisotropic transport of electrons and phonons in monolayer and bulk GaTe: a comparative study","volume":"22","author":"Zhang","year":"2020","journal-title":"Phys. Chem. Chem. Phys."},{"key":"nanoacccffbib41","doi-asserted-by":"publisher","first-page":"2302","DOI":"10.1038\/s41467-019-10256-3","type":"journal-article","article-title":"GaTe tunable giant anisotropic resistance in ultra-thin GaTe","volume":"10","author":"Wang","year":"2019","journal-title":"Nat. Commun."},{"key":"nanoacccffbib42","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.64.035210","type":"journal-article","article-title":"Excitons and band structure of highly anisotropic GaTe single crystals","volume":"64","author":"Yamamoto","year":"2001","journal-title":"Phys. Rev. B"},{"key":"nanoacccffbib43","doi-asserted-by":"publisher","first-page":"309","DOI":"10.1016\/0378-4363(80)90251-X","type":"journal-article","article-title":"Excitonic absorption edge of GaTe","volume":"99","author":"Camassel","year":"1980","journal-title":"Physica B+C"},{"key":"nanoacccffbib44","doi-asserted-by":"publisher","first-page":"1468","DOI":"10.1103\/PhysRevB.46.1468","type":"journal-article","article-title":"Optical properties of excitons in GaTe","volume":"46","author":"Wan","year":"1992","journal-title":"Phys. Rev. B"},{"key":"nanoacccffbib45","doi-asserted-by":"publisher","first-page":"17565","DOI":"10.1021\/acsnano.1c04601","type":"journal-article","article-title":"Ultraefficient terahertz emission mediated by shift-current photovoltaic effect in layered gallium telluride","volume":"15","author":"Tong","year":"2021","journal-title":"ACS Nano"},{"key":"nanoacccffbib46","doi-asserted-by":"publisher","first-page":"21202","DOI":"10.1038\/s41598-021-00673-0","type":"journal-article","article-title":"Thickness-dependent in-plane anisotropy of GaTe phonons","volume":"11","author":"Hoang","year":"2021","journal-title":"Sci. Rep."},{"key":"nanoacccffbib47","doi-asserted-by":"publisher","first-page":"143","DOI":"10.1038\/s42005-022-00923-1","type":"journal-article","article-title":"Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe","volume":"5","author":"Lai","year":"2022","journal-title":"Commun. Phys."},{"key":"nanoacccffbib48","doi-asserted-by":"publisher","first-page":"558","DOI":"10.1103\/PhysRevB.47.558","type":"journal-article","article-title":"Ab initio molecular dynamics for liquid metals","volume":"47","author":"Kresse","year":"1993","journal-title":"Phys. Rev. B"},{"key":"nanoacccffbib49","doi-asserted-by":"publisher","first-page":"1758","DOI":"10.1103\/PhysRevB.59.1758","type":"journal-article","article-title":"From ultrasoft pseudopotentials to the projector augmented-wave method","volume":"59","author":"Kresse","year":"1999","journal-title":"Phys. Rev. B"},{"key":"nanoacccffbib50","doi-asserted-by":"publisher","DOI":"10.1088\/0953-8984\/21\/39\/395502","type":"journal-article","article-title":"Quantum espresso: a modular and open-source software project for quantum simulations of materials","volume":"21","author":"Giannozzi","year":"2009","journal-title":"J. Phys. : Cond. Matt."},{"key":"nanoacccffbib51","doi-asserted-by":"publisher","first-page":"e1411","DOI":"10.1002\/wcms.1411","type":"journal-article","article-title":"Ab initio nonadiabatic molecular dynamics investigations on the excited carriers in condensed matter systems","volume":"9","author":"Zheng","year":"2019","journal-title":"Wires Comput. Mol. Sci."},{"key":"nanoacccffbib52","doi-asserted-by":"publisher","first-page":"4959","DOI":"10.1021\/ct400641n","type":"journal-article","article-title":"The PYXAID program for non-adiabatic molecular dynamics in condensed matter systems","volume":"9","author":"Akimov","year":"2013","journal-title":"J. Chem. Theory Comput."},{"key":"nanoacccffbib53","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.95.163001","type":"journal-article","article-title":"Trajectory surface hopping in the time-dependent kohn\u2013sham approach for electron\u2013nuclear dynamics","volume":"95","author":"Craig","year":"2005","journal-title":"Phys. Rev. Lett."},{"key":"nanoacccffbib54","doi-asserted-by":"publisher","first-page":"789","DOI":"10.1021\/ct400934c","type":"journal-article","article-title":"Advanced capabilities of the PYXAID program: integration schemes, decoherence effects, multiexcitonic states, and field-matter interaction","volume":"10","author":"Akimov","year":"2014","journal-title":"J. Chem. Theory Comput."},{"key":"nanoacccffbib55","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.105.085142","type":"journal-article","article-title":"Spin\u2013orbit coupling induced demagnetization in Ni: A b initio nonadiabatic molecular dynamics perspective","volume":"105","author":"Zheng","year":"2022","journal-title":"Phys. Rev. B"},{"key":"nanoacccffbib56","doi-asserted-by":"publisher","first-page":"997","DOI":"10.1103\/PhysRevLett.52.997","type":"journal-article","article-title":"Density-functional theory for time-dependent systems","volume":"52","author":"Runge","year":"1984","journal-title":"Phys. Rev. Lett."},{"key":"nanoacccffbib57","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.107.075429","type":"journal-article","article-title":"Anomalous indirect carrier relaxation in direct band gap atomically thin gallium telluride","volume":"107","author":"Karmakar","year":"2023","journal-title":"Phys. Rev. B"},{"key":"nanoacccffbib58","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.125.177701","type":"journal-article","article-title":"Why two-dimensional semiconductors generally have low electron mobility","volume":"125","author":"Cheng","year":"2020","journal-title":"Phys. Rev. Lett."}],"container-title":["Nanotechnology"],"original-title":[],"link":[{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/acccff","content-type":"text\/html","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/acccff\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/acccff","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/acccff\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/acccff\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/acccff\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/acccff\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"similarity-checking"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/acccff\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,9,20]],"date-time":"2025-09-20T12:42:26Z","timestamp":1758372146000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/acccff"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,5,2]]},"references-count":58,"journal-issue":{"issue":"28","published-online":{"date-parts":[[2023,5,2]]},"published-print":{"date-parts":[[2023,7,9]]}},"URL":"https:\/\/doi.org\/10.1088\/1361-6528\/acccff","relation":{},"ISSN":["0957-4484","1361-6528"],"issn-type":[{"value":"0957-4484","type":"print"},{"value":"1361-6528","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,5,2]]},"assertion":[{"value":"Strongly anisotropic ultrafast dynamic behavior of GaTe dominated by the tilted and flat bands","name":"article_title","label":"Article Title"},{"value":"Nanotechnology","name":"journal_title","label":"Journal Title"},{"value":"paper","name":"article_type","label":"Article Type"},{"value":"\u00a9 2023 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.","name":"copyright_information","label":"Copyright Information"},{"value":"2023-01-02","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2023-04-13","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2023-05-02","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}