{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,4]],"date-time":"2026-08-04T13:42:36Z","timestamp":1785850956482,"version":"3.56.0"},"reference-count":50,"publisher":"IOP Publishing","issue":"50","license":[{"start":{"date-parts":[[2024,10,8]],"date-time":"2024-10-08T00:00:00Z","timestamp":1728345600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/page\/copyright"},{"start":{"date-parts":[[2024,10,8]],"date-time":"2024-10-08T00:00:00Z","timestamp":1728345600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"funder":[{"name":"Fulbright-Tocqueville chair"},{"DOI":"10.13039\/501100001665","name":"Agence Nationale de la Recherche","doi-asserted-by":"crossref","award":["ANR-21-CE09-0026-01"],"award-info":[{"award-number":["ANR-21-CE09-0026-01"]}],"id":[{"id":"10.13039\/501100001665","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["Nanotechnology"],"published-print":{"date-parts":[[2024,12,9]]},"abstract":"<jats:title>Abstract<\/jats:title>\n               <jats:p>Semiconductor nanowires (NWs) are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its development. A way to circumvent this obstacle is the selective area growth technique. Here, in-plane HgTe nanostructures are grown thanks to selective area molecular beam epitaxy on a semi-insulating CdTe substrate covered with a patterned SiO<jats:sub>2<\/jats:sub> mask. The shape of these nanostructures is defined by the in-plane orientation of the mask aperture along the &lt;110&gt;, &lt;1<jats:inline-formula>\n                     <jats:tex-math\/>\n                     <mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" overflow=\"scroll\">\n                        <mml:mrow>\n                           <mml:mrow>\n                              <mml:mover>\n                                 <mml:mn>1<\/mml:mn>\n                                 <mml:mo stretchy=\"false\">\u00af<\/mml:mo>\n                              <\/mml:mover>\n                           <\/mml:mrow>\n                        <\/mml:mrow>\n                     <\/mml:math>\n                  <\/jats:inline-formula>0&gt;, or &lt;100&gt; direction, the deposited thickness, and the growth temperature (GT). Several micron long in-plane NWs can be achieved as well as more complex nanostructures such as networks, diamond structures or rings. A good selectivity is achieved with very little parasitic growth on the mask even for a GT as low as 140\u2009\u00b0C and growth rate up to 0.5 monolayer per second. For &lt;110&gt; oriented NWs, the center of the nanostructure exhibits a trapezoidal shape with {111}B facets and two grains on the sides, while &lt;1<jats:inline-formula>\n                     <jats:tex-math\/>\n                     <mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" overflow=\"scroll\">\n                        <mml:mrow>\n                           <mml:mrow>\n                              <mml:mover>\n                                 <mml:mn>1<\/mml:mn>\n                                 <mml:mo stretchy=\"false\">\u00af<\/mml:mo>\n                              <\/mml:mover>\n                           <\/mml:mrow>\n                        <\/mml:mrow>\n                     <\/mml:math>\n                  <\/jats:inline-formula>0&gt; oriented NWs show {111}A facets with adatoms accumulation on the sides of the top surface. Transmission electron microscopy observations reveal a continuous epitaxial relation between the CdTe substrate and the HgTe NW. Measurements of the resistance with four-point scanning tunneling microscopy indicates a good electrical homogeneity along the main NW axis and a thermally activated transport. This growth method paves the way toward the fabrication of complex HgTe-based nanostructures for electronic transport measurements.<\/jats:p>","DOI":"10.1088\/1361-6528\/ad7ff4","type":"journal-article","created":{"date-parts":[[2024,9,26]],"date-time":"2024-09-26T22:48:07Z","timestamp":1727390887000},"page":"505602","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":2,"title":["Selective area epitaxy of in-plane HgTe nanostructures on CdTe(001) substrate"],"prefix":"10.1088","volume":"35","author":[{"ORCID":"https:\/\/orcid.org\/0009-0000-2799-180X","authenticated-orcid":true,"given":"N","family":"Chaize","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"X","family":"Baudry","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0350-4901","authenticated-orcid":false,"given":"P-H","family":"Jouneau","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"E","family":"Gautier","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8731-3074","authenticated-orcid":false,"given":"J-L","family":"Rouvi\u00e8re","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7050-1076","authenticated-orcid":false,"given":"Y","family":"Deblock","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"J","family":"Xu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3918-7111","authenticated-orcid":true,"given":"M","family":"Berthe","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"C","family":"Barbot","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6131-7309","authenticated-orcid":true,"given":"B","family":"Grandidier","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2197-4408","authenticated-orcid":true,"given":"L","family":"Desplanque","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1439-1044","authenticated-orcid":true,"given":"H","family":"Sellier","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8844-9325","authenticated-orcid":true,"given":"P","family":"Ballet","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2024,10,8]]},"reference":[{"key":"nanoad7ff4bib1","doi-asserted-by":"publisher","first-page":"2","DOI":"10.1016\/S0003-4916(02)00018-0","volume":"303","author":"Kitaev","year":"2003","journal-title":"Ann. Phys., NY"},{"key":"nanoad7ff4bib2","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1038\/npjqi.2015.1","volume":"1","author":"Sarma","year":"2015","journal-title":"npj Quantum Inf."},{"key":"nanoad7ff4bib3","doi-asserted-by":"publisher","first-page":"766","DOI":"10.1126\/science.1148047","volume":"318","author":"Konig","year":"2007","journal-title":"Science"},{"key":"nanoad7ff4bib4","doi-asserted-by":"publisher","first-page":"2955","DOI":"10.1007\/s11664-014-3160-z","volume":"43","author":"Ballet","year":"2014","journal-title":"J. Electron. Mater."},{"key":"nanoad7ff4bib5","doi-asserted-by":"publisher","DOI":"10.1063\/1.4989822","volume":"110","author":"Haas","year":"2017","journal-title":"Appl. Phys. Lett."},{"key":"nanoad7ff4bib6","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.103.195158","volume":"103","author":"Sarma","year":"2021","journal-title":"Phys. Rev. B"},{"key":"nanoad7ff4bib7","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.5.124602","volume":"5","author":"Ahn","year":"2021","journal-title":"Phys. Rev. Mater."},{"key":"nanoad7ff4bib8","doi-asserted-by":"publisher","first-page":"7867","DOI":"10.1021\/acs.nanolett.2c02585","volume":"22","author":"Fu","year":"2022","journal-title":"Nano Lett."},{"key":"nanoad7ff4bib9","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.120.167201","volume":"120","author":"Noel","year":"2018","journal-title":"Phys. Rev. Lett."},{"key":"nanoad7ff4bib10","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.96.245420","volume":"96","author":"Thomas","year":"2017","journal-title":"Phys. Rev. B"},{"key":"nanoad7ff4bib11","doi-asserted-by":"publisher","first-page":"4831","DOI":"10.1021\/acs.nanolett.8b01405","volume":"18","author":"Bendias","year":"2018","journal-title":"Nano Lett."},{"key":"nanoad7ff4bib12","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevResearch.5.043021","volume":"5","author":"Himmler","year":"2023","journal-title":"Phys. Rev. Res."},{"key":"nanoad7ff4bib13","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.97.035157","volume":"97","author":"Ziegler","year":"2018","journal-title":"Phys. Rev. B"},{"key":"nanoad7ff4bib14","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.100.096407","volume":"100","author":"Fu","year":"2008","journal-title":"Phys. Rev. Lett."},{"key":"nanoad7ff4bib15","doi-asserted-by":"publisher","first-page":"131","DOI":"10.1070\/1063-7869\/44\/10S\/S29","volume":"44","author":"Kitaev","year":"2001","journal-title":"Phys. Usp."},{"key":"nanoad7ff4bib16","doi-asserted-by":"publisher","first-page":"400","DOI":"10.1038\/nmat4176","volume":"14","author":"Krogstrup","year":"2015","journal-title":"Nat. Mater."},{"key":"nanoad7ff4bib17","doi-asserted-by":"publisher","first-page":"6414","DOI":"10.1021\/nl303758w","volume":"12","author":"Deng","year":"2012","journal-title":"Nano Lett."},{"key":"nanoad7ff4bib18","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.87.241401","volume":"87","author":"Churchill","year":"2013","journal-title":"Phys. Rev. B"},{"key":"nanoad7ff4bib19","doi-asserted-by":"publisher","first-page":"115","DOI":"10.1088\/0031-8949\/2006\/T126\/026","volume":"2006","author":"Selvig","year":"2006","journal-title":"Phys. Scr."},{"key":"nanoad7ff4bib20","doi-asserted-by":"publisher","first-page":"1311","DOI":"10.1007\/s11664-008-0414-7","volume":"37","author":"Haakenaasen","year":"2008","journal-title":"J. Electron. Mater."},{"key":"nanoad7ff4bib21","doi-asserted-by":"publisher","first-page":"5190","DOI":"10.1021\/nl402571s","volume":"13","author":"Kang","year":"2013","journal-title":"Nano Lett."},{"key":"nanoad7ff4bib22","doi-asserted-by":"publisher","first-page":"4875","DOI":"10.1002\/adma.201400924","volume":"26","author":"Car","year":"2014","journal-title":"Adv. Mater."},{"key":"nanoad7ff4bib23","doi-asserted-by":"publisher","first-page":"218","DOI":"10.1021\/acs.nanolett.8b03733","volume":"19","author":"Aseev","year":"2018","journal-title":"Nano Lett."},{"key":"nanoad7ff4bib24","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.3.084606","volume":"3","author":"Lee","year":"2019","journal-title":"Phys. Rev. Mater."},{"key":"nanoad7ff4bib25","doi-asserted-by":"publisher","first-page":"6","DOI":"10.1016\/j.jcrysgro.2019.02.012","volume":"512","author":"Desplanque","year":"2019","journal-title":"J. Cryst. Growth"},{"key":"nanoad7ff4bib26","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.2.093401","volume":"2","author":"Krizek","year":"2018","journal-title":"Phys. Rev. Mater."},{"key":"nanoad7ff4bib27","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/aac321","volume":"29","author":"Desplanque","year":"2018","journal-title":"Nanotechnology"},{"key":"nanoad7ff4bib28","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.6.034205","volume":"6","author":"Jiang","year":"2022","journal-title":"Phys. Rev. Mater."},{"key":"nanoad7ff4bib29","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202208974","volume":"32","author":"Jung","year":"2022","journal-title":"Adv. Funct. Mater."},{"key":"nanoad7ff4bib30","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.121.147701","volume":"121","author":"Vaitiek\u0117nas","year":"2018","journal-title":"Phys. Rev. Lett."},{"key":"nanoad7ff4bib31","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.5.094601","volume":"5","author":"Cachaza","year":"2021","journal-title":"Phys. Rev. Mater."},{"key":"nanoad7ff4bib32","doi-asserted-by":"publisher","first-page":"5083","DOI":"10.1021\/acs.cgd.3c00316","volume":"23","author":"Morgan","year":"2023","journal-title":"Cryst. Growth Des."},{"key":"nanoad7ff4bib33","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/ac88d9","volume":"33","author":"Dede","year":"2022","journal-title":"Nanotechnology"},{"key":"nanoad7ff4bib34","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.7.026001","volume":"7","author":"Dubrovskii","year":"2023","journal-title":"Phys. Rev. Mater."},{"key":"nanoad7ff4bib35","doi-asserted-by":"publisher","first-page":"3133","DOI":"10.1007\/s11664-013-2682-0","volume":"42","author":"Ballet","year":"2013","journal-title":"J. Electron. Mater."},{"key":"nanoad7ff4bib36","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/25\/46\/465302","volume":"25","author":"Desplanque","year":"2014","journal-title":"Nanotechnology"},{"key":"nanoad7ff4bib37","doi-asserted-by":"publisher","first-page":"113","DOI":"10.1016\/0022-0248(86)90253-8","volume":"74","author":"Iwanaga","year":"1986","journal-title":"J. Cryst. Growth"},{"key":"nanoad7ff4bib38","doi-asserted-by":"publisher","DOI":"10.1002\/pssb.201800518","volume":"256","author":"Albani","year":"2019","journal-title":"Phys. Status Solidi b"},{"key":"nanoad7ff4bib39","doi-asserted-by":"publisher","first-page":"3205","DOI":"10.1063\/1.122719","volume":"73","author":"Oehling","year":"1998","journal-title":"Appl. Phys. Lett."},{"key":"nanoad7ff4bib40","doi-asserted-by":"publisher","first-page":"748","DOI":"10.1063\/1.362682","volume":"79","author":"Oehling","year":"1996","journal-title":"J. Appl. Phys."},{"key":"nanoad7ff4bib41","doi-asserted-by":"publisher","first-page":"1526","DOI":"10.1116\/1.582379","volume":"18","author":"LaBella","year":"2000","journal-title":"J. Vacuum Sci. Technol. A"},{"key":"nanoad7ff4bib42","doi-asserted-by":"publisher","first-page":"377","DOI":"10.1126\/science.276.5311.377","volume":"276","author":"Zhang","year":"1997","journal-title":"Science"},{"key":"nanoad7ff4bib43","doi-asserted-by":"publisher","DOI":"10.1063\/1.4816743","volume":"103","author":"Wang","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"nanoad7ff4bib44","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.4.074607","volume":"4","author":"Beznasyuk","year":"2020","journal-title":"Phys. Rev. Mater."},{"key":"nanoad7ff4bib45","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.6.023401","volume":"6","author":"De Donno","year":"2022","journal-title":"Phys. Rev. Mater."},{"key":"nanoad7ff4bib46","doi-asserted-by":"publisher","first-page":"48","DOI":"10.1016\/j.ssc.2014.11.006","volume":"202","author":"Kole\u015bnik-Gray","year":"2015","journal-title":"Solid State Commun."},{"key":"nanoad7ff4bib47","doi-asserted-by":"publisher","first-page":"258","DOI":"10.1016\/j.commatsci.2015.06.011","volume":"108","author":"Qian","year":"2015","journal-title":"Comput. Mater. Sci."},{"key":"nanoad7ff4bib48","doi-asserted-by":"publisher","DOI":"10.1063\/1.3512960","volume":"108","author":"Gundersen","year":"2010","journal-title":"J. Appl. Phys."},{"key":"nanoad7ff4bib49","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.106.126803","volume":"106","author":"Br\u00fcne","year":"2011","journal-title":"Phys. Rev. Lett."},{"key":"nanoad7ff4bib50","doi-asserted-by":"publisher","DOI":"10.1209\/0295-5075\/107\/57006","volume":"107","author":"Wu","year":"2014","journal-title":"Europhys. Lett."}],"container-title":["Nanotechnology"],"original-title":[],"link":[{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad7ff4","content-type":"text\/html","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad7ff4\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad7ff4","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad7ff4\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad7ff4\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad7ff4\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad7ff4\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"similarity-checking"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad7ff4\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,10,8]],"date-time":"2024-10-08T13:37:52Z","timestamp":1728394672000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad7ff4"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,10,8]]},"references-count":50,"journal-issue":{"issue":"50","published-online":{"date-parts":[[2024,10,8]]},"published-print":{"date-parts":[[2024,12,9]]}},"URL":"https:\/\/doi.org\/10.1088\/1361-6528\/ad7ff4","relation":{},"ISSN":["0957-4484","1361-6528"],"issn-type":[{"value":"0957-4484","type":"print"},{"value":"1361-6528","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,10,8]]},"assertion":[{"value":"Selective area epitaxy of in-plane HgTe nanostructures on CdTe(001) substrate","name":"article_title","label":"Article Title"},{"value":"Nanotechnology","name":"journal_title","label":"Journal Title"},{"value":"paper","name":"article_type","label":"Article Type"},{"value":"\u00a9 2024 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.","name":"copyright_information","label":"Copyright Information"},{"value":"2024-07-08","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2024-09-26","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2024-10-08","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}