{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,8]],"date-time":"2026-02-08T09:55:30Z","timestamp":1770544530930,"version":"3.49.0"},"reference-count":43,"publisher":"IOP Publishing","issue":"3","license":[{"start":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T00:00:00Z","timestamp":1730246400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/page\/copyright"},{"start":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T00:00:00Z","timestamp":1730246400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["Nanotechnology"],"published-print":{"date-parts":[[2025,1,20]]},"abstract":"<jats:title>Abstract<\/jats:title>\n               <jats:p>Two-dimensional materials are widely studied due to its unique physical, optical, electrical properties, and good compatibility with various synthesis methods. And among the many fabrication methods, tin disulfide (SnS<jats:sub>2<\/jats:sub>) material, a two-dimensional (2D) material that can be achieved with accurate thickness control using atomic layer deposition (ALD), high uniformity and conformality even at low process temperatures is attracting attention. However, since the crystallinity of the thin film is low at a low process temperature, various post-annealing methods are being studied to compensate for film quality. In this work, we compared the crystal structures, chemical binding energies, and electrical properties of the thin films by post-annealing SnS<jats:sub>2<\/jats:sub> thin films according to the hydrogen sulfide concentrations of 4.00% and 99.99% in the hydrogen sulfide atmospheres. The crystallinity, grain size, and carrier concentrations of the SnS<jats:sub>2<\/jats:sub> thin film were the highest at a post-annealing temperature of 350 \u00b0C at a hydrogen sulfide concentration of 99.99%, and the chemical binding energies also corresponded with the standard Sn<jats:sup>4+<\/jats:sup> states, forming a pure 2D-hexagonal SnS<jats:sub>2<\/jats:sub> phase. In addition, SnS<jats:sub>2<\/jats:sub> thin films deposited via ALD showed high uniformity and conformality in large-scale wafers and trench structure wafers.<\/jats:p>","DOI":"10.1088\/1361-6528\/ad89b7","type":"journal-article","created":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T15:03:24Z","timestamp":1729609404000},"page":"035602","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":1,"title":["Effect of hydrogen sulfide concentration on two-dimensional SnS<sub>2<\/sub> film by atomic layer deposition in annealing process"],"prefix":"10.1088","volume":"36","author":[{"given":"Heejun","family":"Yoon","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2502-7413","authenticated-orcid":true,"given":"Hyeongtag","family":"Jeon","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"266","published-online":{"date-parts":[[2024,10,30]]},"reference":[{"key":"nanoad89b7bib1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202105132","article-title":"2D metallic transition\u2010metal dichalcogenides: structures, synthesis, properties, and applications","volume":"31","author":"Zhao","year":"2021","journal-title":"Adv. Funct. Mater."},{"key":"nanoad89b7bib2","doi-asserted-by":"publisher","first-page":"3042","DOI":"10.1109\/TED.2011.2159221","article-title":"Performance limits of monolayer transition metal dichalcogenide transistors","volume":"58","author":"Liu","year":"2011","journal-title":"IEEE Trans. Electron Devices"},{"key":"nanoad89b7bib3","doi-asserted-by":"publisher","first-page":"482","DOI":"10.1016\/j.tsf.2016.08.068","article-title":"Atomically-thin layered films for device applications based upon 2D TMDC materials","volume":"616","author":"McDonnell","year":"2016","journal-title":"Thin Solid Films"},{"key":"nanoad89b7bib4","doi-asserted-by":"publisher","first-page":"587","DOI":"10.1016\/j.matt.2019.12.026","article-title":"Atomic layer deposition of two-dimensional layered materials: processes, growth mechanisms, and characteristics","volume":"2","author":"Cai","year":"2020","journal-title":"Matter"},{"key":"nanoad89b7bib5","doi-asserted-by":"publisher","first-page":"695","DOI":"10.1038\/s41557-022-00924-1","article-title":"Fabrication of devices featuring covalently linked MoS2\u2013graphene heterostructures","volume":"14","author":"V\u00e1zquez Sulleiro","year":"2022","journal-title":"Nat. Chem."},{"key":"nanoad89b7bib6","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2022.155163","article-title":"Role of van der Waals interactions on the binding energies of 2D transition-metal dichalcogenides","volume":"608","author":"Liu","year":"2023","journal-title":"Appl. Surf. Sci."},{"key":"nanoad89b7bib7","doi-asserted-by":"publisher","first-page":"04EH7","DOI":"10.7567\/JJAP.53.04EH07","article-title":"Optical and electrical properties of MoS2 and Fe-doped MoS2","volume":"53","author":"Wang","year":"2014","journal-title":"Jpn. J. Appl. Phys."},{"key":"nanoad89b7bib8","doi-asserted-by":"publisher","first-page":"189","DOI":"10.1016\/S0927-0248(98)00187-1","article-title":"Optical and electrical properties of semiconducting WS2 thin films: from macroscopic to local probe measurements","volume":"57","author":"Ballif","year":"1999","journal-title":"Sol. Energy Mater. Sol. Cells"},{"key":"nanoad89b7bib9","doi-asserted-by":"publisher","first-page":"29","DOI":"10.1038\/s41699-020-00162-4","article-title":"Bandgap engineering of two-dimensional semiconductor materials","volume":"4","author":"Chaves","year":"2020","journal-title":"npj 2D Mater. Appl."},{"key":"nanoad89b7bib10","doi-asserted-by":"publisher","first-page":"554","DOI":"10.1016\/j.surfrep.2015.10.001","article-title":"Vibrational and optical properties of MoS2: from monolayer to bulk","volume":"70","author":"Molina-Sanchez","year":"2015","journal-title":"Surf. Sci. Rep."},{"key":"nanoad89b7bib11","doi-asserted-by":"publisher","first-page":"699","DOI":"10.1038\/nnano.2012.193","article-title":"Electronics and optoelectronics of two-dimensional transition metal dichalcogenides","volume":"7","author":"Wang","year":"2012","journal-title":"Nat. Nanotechnol."},{"key":"nanoad89b7bib12","doi-asserted-by":"publisher","DOI":"10.1063\/1.3672219","article-title":"The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory","volume":"99","author":"Ellis","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"nanoad89b7bib13","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.105.136805","article-title":"Atomically thin MoS2: a new direct-gap semiconductor","volume":"105","author":"Mak","year":"2010","journal-title":"Phys. Rev. Lett."},{"key":"nanoad89b7bib14","doi-asserted-by":"publisher","first-page":"10388","DOI":"10.1039\/c3dt52353e","article-title":"Electrical and optical characterization of atomically thin WS 2","volume":"43","author":"Georgiou","year":"2014","journal-title":"Dalton Trans."},{"key":"nanoad89b7bib15","doi-asserted-by":"publisher","first-page":"72","DOI":"10.1007\/BF02874985","article-title":"The Sn\u2212 Te (Tin-Tellurium) system","volume":"7","author":"Sharma","year":"1986","journal-title":"Bull. Alloy Phase Diagr."},{"key":"nanoad89b7bib16","doi-asserted-by":"publisher","first-page":"93","DOI":"10.1007\/BF02881201","article-title":"The Mo-S system (molybdenum-sulfur)","volume":"1","author":"Brewer","year":"1980","journal-title":"Bull. Alloy Phase Diagr."},{"key":"nanoad89b7bib17","doi-asserted-by":"publisher","DOI":"10.1002\/smll.201904116","article-title":"Large\u2010scale growth and field\u2010effect transistors electrical engineering of atomic\u2010layer SnS2","volume":"15","author":"Xu","year":"2019","journal-title":"Small"},{"key":"nanoad89b7bib18","doi-asserted-by":"publisher","first-page":"20677","DOI":"10.1039\/C7CP03748A","article-title":"Ultra low lattice thermal conductivity and high carrier mobility of monolayer SnS2 and SnSe2: a first principles study","volume":"19","author":"Shafique","year":"2017","journal-title":"Phys. Chem. Chem. Phys."},{"key":"nanoad89b7bib19","doi-asserted-by":"publisher","first-page":"9666","DOI":"10.1039\/c3nr01899g","article-title":"High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits","volume":"5","author":"Song","year":"2013","journal-title":"Nanoscale"},{"key":"nanoad89b7bib20","doi-asserted-by":"publisher","first-page":"10743","DOI":"10.1021\/nn504481r","article-title":"Tin disulfide an emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics","volume":"8","author":"Huang","year":"2014","journal-title":"ACS Nano"},{"key":"nanoad89b7bib21","doi-asserted-by":"publisher","first-page":"1994","DOI":"10.1007\/s11434-015-0936-3","article-title":"2D materials via liquid exfoliation: a review on fabrication and applications","volume":"60","author":"Huo","year":"2015","journal-title":"Sci. Bull."},{"key":"nanoad89b7bib22","doi-asserted-by":"publisher","first-page":"2453","DOI":"10.1038\/s41467-020-16266-w","article-title":"Universal mechanical exfoliation of large-area 2D crystals","volume":"11","author":"Huang","year":"2020","journal-title":"Nat. Commun."},{"key":"nanoad89b7bib23","doi-asserted-by":"publisher","first-page":"615","DOI":"10.1039\/D0NR08071C","article-title":"Large-area synthesis of transition metal dichalcogenides via CVD and solution-based approaches and their device applications","volume":"13","author":"Hoang","year":"2021","journal-title":"Nanoscale"},{"key":"nanoad89b7bib24","doi-asserted-by":"publisher","first-page":"711","DOI":"10.1038\/s41928-020-00475-8","article-title":"Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors","volume":"3","author":"Li","year":"2020","journal-title":"Nat. Electron."},{"key":"nanoad89b7bib25","doi-asserted-by":"publisher","DOI":"10.1016\/j.flatc.2020.100161","article-title":"Research progress on the preparations, characterizations and applications of large scale 2D transition metal dichalcogenides films","volume":"21","author":"Xiong","year":"2020","journal-title":"FlatChem"},{"key":"nanoad89b7bib26","doi-asserted-by":"publisher","first-page":"39077","DOI":"10.1021\/acsami.9b13645","article-title":"Two-dimensional alloying molybdenum tin disulfide monolayers with fast photoresponse","volume":"11","author":"Mo","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"nanoad89b7bib27","doi-asserted-by":"publisher","first-page":"42121","DOI":"10.1021\/acsami.7b14189","article-title":"Shape-uniform, high-quality monolayered MoS2 crystals for gate-tunable photoluminescence","volume":"9","author":"Zhang","year":"2017","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"nanoad89b7bib28","doi-asserted-by":"publisher","DOI":"10.1088\/2053-1583\/ab5ad1","article-title":"Scalable BEOL compatible 2D tungsten diselenide","volume":"7","author":"Kozhakhmetov","year":"2019","journal-title":"2D Mater."},{"key":"nanoad89b7bib29","doi-asserted-by":"publisher","first-page":"1644","DOI":"10.1007\/s12274-020-2787-8","article-title":"Atomic layer deposited 2D MoS2 atomic crystals: from material to circuit","volume":"13","author":"Liu","year":"2020","journal-title":"Nano Res."},{"key":"nanoad89b7bib30","doi-asserted-by":"publisher","DOI":"10.1002\/admi.202001677","article-title":"Atomic layer deposition of 2D metal dichalcogenides for electronics, catalysis, energy storage, and beyond","volume":"8","author":"Mattinen","year":"2021","journal-title":"Adv. Mater. Interfaces"},{"key":"nanoad89b7bib31","doi-asserted-by":"publisher","DOI":"10.1002\/admi.202001046","article-title":"Controlling atomic layer deposition of 2D semiconductor SnS2 by the choice of substrate","volume":"7","author":"Mattinen","year":"2020","journal-title":"Adv. Mater. Interfaces"},{"key":"nanoad89b7bib32","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202005907","article-title":"Atomic\u2010layer\u2010deposition\u2010based 2D transition metal chalcogenides: synthesis, modulation, and applications","volume":"33","author":"Kim","year":"2021","journal-title":"Adv. Mater."},{"key":"nanoad89b7bib33","doi-asserted-by":"publisher","first-page":"32","DOI":"10.1016\/j.mssp.2018.01.021","article-title":"Formation of SnS phase obtained by thermal vacuum annealing of SnS2 thin films and its application in solar cells","volume":"79","author":"Voznyi","year":"2018","journal-title":"Mater. Sci. Semicond. Process."},{"key":"nanoad89b7bib34","doi-asserted-by":"publisher","DOI":"10.1088\/1757-899X\/1166\/1\/012004","article-title":"Effect of annealing on structural and optical properties of SnS2 thin films grown by thermal evaporation and post sulphur annealing technique","volume":"1166","author":"Lazar","year":"2021","journal-title":"IOP Conf. Ser.: Mater. Sci. Eng."},{"key":"nanoad89b7bib35","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/ab8041","article-title":"Investigation of the growth of few-layer SnS2 thin films via atomic layer deposition on an O2 plasma-treated substrate","volume":"31","author":"Lee","year":"2020","journal-title":"Nanotechnology"},{"key":"nanoad89b7bib36","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/ab2d89","article-title":"Layered deposition of SnS2 grown by atomic layer deposition and its transport properties","volume":"30","author":"Lee","year":"2019","journal-title":"Nanotechnology"},{"key":"nanoad89b7bib37","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/ad2573","article-title":"Atomic layer deposition of SnS2 film on a precursor pre-treated substrate","volume":"35","author":"Kim","year":"2024","journal-title":"Nanotechnology"},{"key":"nanoad89b7bib38","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.56.031201","article-title":"Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition","volume":"56","author":"Seo","year":"2017","journal-title":"Jpn. J. Appl. Phys."},{"key":"nanoad89b7bib39","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2021.162806","article-title":"Deposition of the tin sulfide thin films using ALD and a vacuum annealing process for tuning the phase transition","volume":"896","author":"Choi","year":"2022","journal-title":"J. Alloys Compd."},{"key":"nanoad89b7bib40","doi-asserted-by":"publisher","first-page":"8889","DOI":"10.1021\/am401127s","article-title":"Tuning the electronic structure of tin sulfides grown by atomic layer deposition","volume":"5","author":"Ham","year":"2013","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"nanoad89b7bib41","doi-asserted-by":"publisher","first-page":"141","DOI":"10.4028\/www.scientific.net\/AMR.829.141","article-title":"Effect of heat treatment on the phase transformation From SnS to pure SnS2","volume":"829","author":"Orimi","year":"2014","journal-title":"Adv. Mater. Res."},{"key":"nanoad89b7bib42","doi-asserted-by":"publisher","DOI":"10.1063\/1.4982068","article-title":"Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing","volume":"7","author":"Lee","year":"2017","journal-title":"AIP Adv."},{"key":"nanoad89b7bib43","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/aab3c1","article-title":"Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics","volume":"29","author":"Choi","year":"2018","journal-title":"Nanotechnology"}],"container-title":["Nanotechnology"],"original-title":[],"link":[{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad89b7","content-type":"text\/html","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad89b7\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad89b7","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad89b7\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad89b7\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad89b7\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad89b7\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"similarity-checking"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad89b7\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T15:12:00Z","timestamp":1730301120000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ad89b7"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,10,30]]},"references-count":43,"journal-issue":{"issue":"3","published-online":{"date-parts":[[2024,10,30]]},"published-print":{"date-parts":[[2025,1,20]]}},"URL":"https:\/\/doi.org\/10.1088\/1361-6528\/ad89b7","relation":{},"ISSN":["0957-4484","1361-6528"],"issn-type":[{"value":"0957-4484","type":"print"},{"value":"1361-6528","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,10,30]]},"assertion":[{"value":"Effect of hydrogen sulfide concentration on two-dimensional SnS2 film by atomic layer deposition in annealing process","name":"article_title","label":"Article Title"},{"value":"Nanotechnology","name":"journal_title","label":"Journal Title"},{"value":"paper","name":"article_type","label":"Article Type"},{"value":"\u00a9 2024 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.","name":"copyright_information","label":"Copyright Information"},{"value":"2024-07-24","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2024-10-21","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2024-10-30","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}