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They are known for their excellent mechanical strength and durability, which are critical for their potential applications in high-stress environments and micro\u2013nano functional systems. Here, the mechanical properties and deformation mechanisms of 2H\u2013SiC NWs with rare defects in the [0001] orientation are reported. A series of <jats:italic>in situ<\/jats:italic> operational experiments were carried out to evaluate the mechanical behavior and deformation processes of the nanowires, obtaining dynamic images, quantitative force profiles, stress\u2013strain curves and lattice evolution during bending. Experimental results indicate that the maximum bending strain reached 17.7%, and the viscoelastic behavior during the recovery process after fracture was captured. Based on the elastic deformation and brittle fracture behavior of SiC NWs, this is attributed to the presence of the amorphous SiO<jats:sub>2<\/jats:sub> layer encapsulating the surface of the nanowires, which can also enhance their flexibility, enabling their application under higher pressure conditions. These advancements contribute to the further mechanical design of SiC NWs, expand the photonic application scenarios, and promote their application in high-performance electronic devices.<\/jats:p>","DOI":"10.1088\/1361-6528\/ae0419","type":"journal-article","created":{"date-parts":[[2025,9,7]],"date-time":"2025-09-07T23:47:36Z","timestamp":1757288856000},"page":"415701","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":1,"title":["Enhanced bendability and viscoelastic behavior in high-quality 2H\u2013SiC@SiO<sub>2<\/sub> nanowires"],"prefix":"10.1088","volume":"36","author":[{"ORCID":"https:\/\/orcid.org\/0009-0001-5525-3908","authenticated-orcid":true,"given":"Zhifeng","family":"Chen","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Cairong","family":"Ding","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jingying","family":"Sun","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6402-2562","authenticated-orcid":true,"given":"Yong","family":"Sun","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chengxin","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2025,10,10]]},"reference":[{"key":"nanoae0419bib1","doi-asserted-by":"publisher","first-page":"245","DOI":"10.3390\/cryst12020245","type":"journal-article","article-title":"Review of silicon carbide processing for power MOSFET","volume":"12","author":"Langpoklakpam","year":"2022","journal-title":"Crystals"},{"key":"nanoae0419bib2","doi-asserted-by":"publisher","first-page":"7201","DOI":"10.1038\/s41467-022-34943-w","type":"journal-article","article-title":"High thermal conductivity in wafer-scale cubic silicon carbide crystals","volume":"13","author":"Cheng","year":"2022","journal-title":"Nat. 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