{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,21]],"date-time":"2025-10-21T06:41:46Z","timestamp":1761028906533,"version":"build-2065373602"},"reference-count":50,"publisher":"IOP Publishing","issue":"42","license":[{"start":{"date-parts":[[2025,10,21]],"date-time":"2025-10-21T00:00:00Z","timestamp":1761004800000},"content-version":"vor","delay-in-days":1,"URL":"https:\/\/publishingsupport.iopscience.iop.org\/iop-standard\/v1"},{"start":{"date-parts":[[2025,10,21]],"date-time":"2025-10-21T00:00:00Z","timestamp":1761004800000},"content-version":"tdm","delay-in-days":1,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"funder":[{"name":"National Key Research and Development Program of China","award":["2021YFA1200700"],"award-info":[{"award-number":["2021YFA1200700"]}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"crossref","award":["12204109"],"award-info":[{"award-number":["12204109"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["Nanotechnology"],"published-print":{"date-parts":[[2025,10,20]]},"abstract":"<jats:title>Abstract<\/jats:title>\n               <jats:p>The increasing demand for high-precision ultraviolet (UV) detection in applications such as environmental monitoring, industrial inspection, and public safety necessitates the development of advanced UV power meters with high sensitivity, and low detection limits. In this work, we demonstrate a high performance UV photodetector based on the interface barrier controlled two-dimensional (2D) heterostructure of Au\/hBN\/MoS<jats:sub>2<\/jats:sub> on Si\/SiO<jats:sub>2<\/jats:sub> substrate, which can function as a precise UV power meter with high precision. The device exhibits an ultrahigh photoresponsivity up to 1.03 \u00d7 10<jats:sup>5<\/jats:sup> A W<jats:sup>\u22121<\/jats:sup> to 254 nm UVC light with an excellent spectral selectivity. In particular, the distinctive inverse relationship between the response time and incident light intensity enables accurate power calibration for incident UV irradiation. The device, demonstrated in a TO-46 packaged configuration, is capable of detecting UV light with intensities as low as 0.7 <jats:italic>\u03bc<\/jats:italic>W cm<jats:sup>\u22122<\/jats:sup>. Its measurement accuracy is verified through the power radiation law, and the detection limit surpasses that of commercial UV power meters. These results highlight a promising strategy for developing next-generation UV photodetectors based on 2D heterostructures.<\/jats:p>","DOI":"10.1088\/1361-6528\/ae1141","type":"journal-article","created":{"date-parts":[[2025,10,9]],"date-time":"2025-10-09T22:47:41Z","timestamp":1760050061000},"page":"425201","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":0,"title":["Highly sensitive ultraviolet power meter based on two-dimensional van der Waals heterostructure"],"prefix":"10.1088","volume":"36","author":[{"given":"Bangchi","family":"Huang","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiang","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0003-3326-0781","authenticated-orcid":true,"given":"Jianlin","family":"Shi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhipeng","family":"Zhong","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yezhao","family":"Zhuang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yizihan","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tie","family":"Lin","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiangjian","family":"Meng","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6037-4544","authenticated-orcid":true,"given":"Hai","family":"Huang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Junhao","family":"Chu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0000-4793-4765","authenticated-orcid":true,"given":"Jiao","family":"Peng","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"266","published-online":{"date-parts":[[2025,10,21]]},"reference":[{"key":"nanoae1141bib1","doi-asserted-by":"publisher","first-page":"4452","DOI":"10.3390\/s23094452","type":"journal-article","article-title":"Ultraviolet photodetectors: from photocathodes to low-dimensional solids","volume":"23","author":"Rogalski","year":"2023","journal-title":"Sensors"},{"key":"nanoae1141bib2","doi-asserted-by":"publisher","first-page":"493","DOI":"10.1016\/j.mattod.2015.06.001","type":"journal-article","article-title":"New concept ultraviolet photodetectors","volume":"18","author":"Chen","year":"2015","journal-title":"Mater. Today"},{"key":"nanoae1141bib3","doi-asserted-by":"publisher","first-page":"587","DOI":"10.1038\/s41578-023-00583-9","type":"journal-article","article-title":"Low-dimensional wide-bandgap semiconductors for UV photodetectors","volume":"8","author":"Li","year":"2023","journal-title":"Nat. Rev. Mater."},{"key":"nanoae1141bib4","doi-asserted-by":"publisher","first-page":"2293","DOI":"10.1039\/D1MH00776A","type":"journal-article","article-title":"Visible-blind ultraviolet narrowband photomultiplication-type organic photodetector with an ultrahigh external quantum efficiency of over 1000000%","volume":"8","author":"Guo","year":"2021","journal-title":"Mater. Horiz."},{"key":"nanoae1141bib5","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202206993","type":"journal-article","article-title":"Visible\u2010blind deep ultraviolet photomultiplication organic photodetectors with ultrahigh gain for UVB and UVC light detection","volume":"32","author":"Yang","year":"2022","journal-title":"Adv. Funct. Mater."},{"key":"nanoae1141bib6","doi-asserted-by":"publisher","first-page":"6260","DOI":"10.1038\/s41598-021-85425-w","type":"journal-article","article-title":"UV-C irradiation is highly effective in inactivating SARS-CoV-2 replication","volume":"11","author":"Biasin","year":"2021","journal-title":"Sci. Rep."},{"key":"nanoae1141bib7","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202206151","type":"journal-article","article-title":"Air induced formation of Cs3Bi2Br9\/Cs3BiBr6 bulk heterojunction and its dual\u2010band photodetection abilities for light communication","volume":"32","author":"Cao","year":"2022","journal-title":"Adv. Funct. Mater."},{"key":"nanoae1141bib8","doi-asserted-by":"publisher","DOI":"10.1002\/adom.201800068","type":"journal-article","article-title":"Diamond\u2010based all\u2010carbon photodetectors for solar\u2010blind imaging","volume":"6","author":"Lin","year":"2018","journal-title":"Adv. Opt. Mater."},{"key":"nanoae1141bib9","doi-asserted-by":"publisher","first-page":"2941","DOI":"10.1021\/acsphotonics.0c01245","type":"journal-article","article-title":"A critical review on ultraviolet disinfection systems against COVID-19 outbreak: applicability, validation, and safety considerations","volume":"7","author":"Raeiszadeh","year":"2020","journal-title":"ACS Photonics"},{"key":"nanoae1141bib10","doi-asserted-by":"publisher","first-page":"684","DOI":"10.1038\/s41557-024-01472-6","type":"journal-article","article-title":"The impact of UV light on synthetic photochemistry and photocatalysis","volume":"16","author":"Goti","year":"2024","journal-title":"Nat. Chem."},{"key":"nanoae1141bib11","doi-asserted-by":"publisher","first-page":"0385","DOI":"10.34133\/research.0385","type":"journal-article","article-title":"Wide bandgap semiconductors for ultraviolet photodetectors: approaches, applications, and prospects","volume":"7","author":"Cao","year":"2024","journal-title":"Research"},{"key":"nanoae1141bib12","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201806006","type":"journal-article","article-title":"Recent progress in solar\u2010blind deep\u2010ultraviolet photodetectors based on inorganic ultrawide bandgap semiconductors","volume":"29","author":"Xie","year":"2019","journal-title":"Adv. Funct. Mater."},{"key":"nanoae1141bib13","doi-asserted-by":"publisher","first-page":"915","DOI":"10.3390\/cryst13060915","type":"journal-article","article-title":"Deep ultraviolet photodetector: materials and devices","volume":"13","author":"Fang","year":"2023","journal-title":"Crystals"},{"key":"nanoae1141bib14","doi-asserted-by":"publisher","first-page":"2111","DOI":"10.1002\/pssc.200983609","type":"journal-article","article-title":"Characteristics of high Al\u2010content AlGaN\/AlN quantum wells fabricated by modified migration enhanced epitaxy","volume":"7","author":"Banal","year":"2010","journal-title":"Phys. Status Solidi C"},{"key":"nanoae1141bib15","doi-asserted-by":"publisher","first-page":"895","DOI":"10.1109\/LED.2021.3070899","type":"journal-article","article-title":"Bandgap engineering of ZrGaO films for deep-ultraviolet detection","volume":"42","author":"Guo","year":"2021","journal-title":"IEEE Electron. Device Lett."},{"key":"nanoae1141bib16","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6641\/ab5df8","type":"journal-article","article-title":"Material-to-device performance correlation for AlGaN-based solar-blind p\u2013i\u2013n photodiodes","volume":"35","author":"Kalra","year":"2020","journal-title":"Semicond. Sci. Technol."},{"key":"nanoae1141bib17","doi-asserted-by":"publisher","first-page":"786","DOI":"10.1038\/s41928-021-00670-1","type":"journal-article","article-title":"Transistors based on two-dimensional materials for future integrated circuits","volume":"4","author":"Das","year":"2021","journal-title":"Nat. Electron."},{"key":"nanoae1141bib18","doi-asserted-by":"publisher","DOI":"10.1002\/smtd.202000919","type":"journal-article","article-title":"Strain engineering in 2D material\u2010based flexible optoelectronics","volume":"5","author":"Du","year":"2020","journal-title":"Small Methods"},{"key":"nanoae1141bib19","doi-asserted-by":"publisher","DOI":"10.1088\/1674-4926\/37\/9\/091001","type":"journal-article","article-title":"Photodetectors based on two dimensional materials","volume":"37","author":"Lou","year":"2016","journal-title":"J. Semicond."},{"key":"nanoae1141bib20","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202205714","type":"journal-article","article-title":"Recent progress in strain engineering on Van der Waals 2D materials: tunable electrical, electrochemical, magnetic, and optical properties","volume":"35","author":"Qi","year":"2023","journal-title":"Adv. Mater."},{"key":"nanoae1141bib21","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201600364","type":"journal-article","article-title":"Electronic and optoelectronic devices based on two\u2010dimensional materials: from fabrication to application","volume":"3","author":"Shim","year":"2017","journal-title":"Adv. Electron. Mater."},{"key":"nanoae1141bib22","doi-asserted-by":"publisher","DOI":"10.1002\/adom.202002214","type":"journal-article","article-title":"2D layered materials for ultraviolet photodetection: a review","volume":"9","author":"Kaushik","year":"2021","journal-title":"Adv. Opt. Mater."},{"key":"nanoae1141bib23","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/ac33d7","type":"journal-article","article-title":"Recent advances in UV photodetectors based on 2D materials: a review","volume":"55","author":"Kumar","year":"2021","journal-title":"J. Appl. Phys."},{"key":"nanoae1141bib24","doi-asserted-by":"publisher","DOI":"10.1016\/j.sna.2024.115837","type":"journal-article","article-title":"Recent advances in layered and non-layered 2D materials for UV detection","volume":"378","author":"Ranjan","year":"2024","journal-title":"Sens. Actuators A"},{"key":"nanoae1141bib25","doi-asserted-by":"publisher","first-page":"5339","DOI":"10.1021\/acsphotonics.4c01616","type":"journal-article","article-title":"Ultrahigh photoresponsivity enabled by carrier multiplication in a self-powered solar-blind photodetector based on the WS2\/graphene Heterostructure","volume":"11","author":"Ma","year":"2024","journal-title":"ACS Photonics"},{"key":"nanoae1141bib26","doi-asserted-by":"publisher","DOI":"10.1002\/adsr.202300076","type":"journal-article","article-title":"High\u2010sensitive and fast speed UV photodetector based on HfSe2\/InSe Heterostructure","volume":"2","author":"Zhang","year":"2023","journal-title":"Adv. Sens. Res."},{"key":"nanoae1141bib27","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202204021","type":"journal-article","article-title":"Vertical barrier Heterostructures for reliable, robust, and high-performance ultraviolet detection","volume":"18","author":"Wang","year":"2022","journal-title":"Small"},{"key":"nanoae1141bib28","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202401996","type":"journal-article","article-title":"Filter-free UV photodetectors based on unipolar barrier Van der Waals \u03b1-In2Se3\/h-BN Heterostructures","volume":"20","author":"Yan","year":"2024","journal-title":"Small"},{"key":"nanoae1141bib29","doi-asserted-by":"publisher","first-page":"2209","DOI":"10.1038\/s41467-025-56886-8","type":"journal-article","article-title":"Tunneling-barrier-controlled sensitive deep ultraviolet photodetectors based on van der Waals heterostructures","volume":"16","author":"Li","year":"2025","journal-title":"Nat. Commun."},{"key":"nanoae1141bib30","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/ac83ce","type":"journal-article","article-title":"Performance of metal-semiconductor-metal structured diamond deep-ultraviolet photodetector with a large active area","volume":"55","author":"Feng","year":"2022","journal-title":"J. Appl. Phys."},{"key":"nanoae1141bib31","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-021-90450-w","type":"journal-article","article-title":"Fabrication of GaN nano-towers based self-powered UV photodetector","volume":"11","author":"Goswami","year":"2021","journal-title":"Sci. Rep."},{"key":"nanoae1141bib32","doi-asserted-by":"publisher","first-page":"1237","DOI":"10.1109\/LPT.2019.2923147","type":"journal-article","article-title":"Polarization-graded AlGaN solar-blind p-i-n detector with 92% zero-bias external quantum efficiency","volume":"31","author":"Kalra","year":"2019","journal-title":"IEEE Photonics Technol. Lett."},{"key":"nanoae1141bib33","doi-asserted-by":"publisher","first-page":"10725","DOI":"10.1002\/adma.201604049","type":"journal-article","article-title":"Graphene-beta-Ga2O3 heterojunction for highly sensitive deep UV photodetector application","volume":"28","author":"Kong","year":"2016","journal-title":"Adv. Mater."},{"key":"nanoae1141bib34","doi-asserted-by":"publisher","DOI":"10.1063\/1.3596479","type":"journal-article","article-title":"MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates","volume":"98","author":"Zheng","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"nanoae1141bib35","doi-asserted-by":"publisher","first-page":"342","DOI":"10.1038\/s41928-021-00566-0","type":"journal-article","article-title":"Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors","volume":"4","author":"Liu","year":"2021","journal-title":"Nat. Electron."},{"key":"nanoae1141bib36","doi-asserted-by":"publisher","first-page":"259","DOI":"10.1038\/s41586-021-04323-3","type":"journal-article","article-title":"Vertical MoS2 transistors with sub-1-nm gate lengths","volume":"603","author":"Wu","year":"2022","journal-title":"Nature"},{"key":"nanoae1141bib37","doi-asserted-by":"publisher","first-page":"25659","DOI":"10.1021\/acsami.2c03198","type":"journal-article","article-title":"Ultrafast operation of 2D Heterostructured nonvolatile memory devices provided by the strong short-time dielectric breakdown strength of h-BN","volume":"14","author":"Sasaki","year":"2022","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"nanoae1141bib38","doi-asserted-by":"publisher","first-page":"3172","DOI":"10.1021\/acs.nanolett.8b00835","type":"journal-article","article-title":"Air-stable room-temperature mid-infrared photodetectors based on hBN\/black arsenic phosphorus\/hBN Heterostructures","volume":"18","author":"Yuan","year":"2018","journal-title":"Nano Lett."},{"key":"nanoae1141bib39","doi-asserted-by":"publisher","first-page":"1385","DOI":"10.1002\/adfm.201102111","type":"journal-article","article-title":"From bulk to monolayer MoS2: evolution of Raman scattering","volume":"22","author":"Li","year":"2012","journal-title":"Adv. Funct. Mater."},{"key":"nanoae1141bib40","doi-asserted-by":"publisher","first-page":"2468","DOI":"10.1002\/jrs.6007","type":"journal-article","article-title":"The impact of ultraviolet laser excitation during Raman spectroscopy of hexagonal boron nitride thin films","volume":"51","author":"Karim","year":"2020","journal-title":"J. Raman Spectrosc."},{"key":"nanoae1141bib41","doi-asserted-by":"publisher","first-page":"874","DOI":"10.1038\/s41565-021-00921-4","type":"journal-article","article-title":"Ultrafast non-volatile flash memory based on van der Waals heterostructures","volume":"16","author":"Liu","year":"2021","journal-title":"Nat. Nanotechnol."},{"key":"nanoae1141bib42","doi-asserted-by":"publisher","first-page":"6658","DOI":"10.1021\/acsnano.0c10005","type":"journal-article","article-title":"Material and device structure designs for 2D memory devices based on the floating gate voltage trajectory","volume":"15","author":"Sasaki","year":"2021","journal-title":"ACS Nano"},{"key":"nanoae1141bib43","doi-asserted-by":"publisher","DOI":"10.1088\/2752-5724\/ac7067","type":"journal-article","article-title":"Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS2-channel transistor","volume":"1","author":"Liu","year":"2022","journal-title":"Mater. Futures"},{"key":"nanoae1141bib44","doi-asserted-by":"publisher","first-page":"2328","DOI":"10.1021\/acs.nanolett.1c04737","type":"journal-article","article-title":"Multifunctional half-floating-gate field-effect transistor based on MoS2-BN-Graphene van der Waals Heterostructures","volume":"22","author":"Wu","year":"2022","journal-title":"Nano Lett."},{"key":"nanoae1141bib45","doi-asserted-by":"publisher","first-page":"35196","DOI":"10.1021\/acsami.3c06316","type":"journal-article","article-title":"Uncovering the role of crystal phase in determining nonvolatile flash memory device performance fabricated from MoTe2-based 2D van der Waals heterostructures","volume":"15","author":"Xia","year":"2023","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"nanoae1141bib46","doi-asserted-by":"publisher","first-page":"7481","DOI":"10.1021\/acsanm.2c01466","type":"journal-article","article-title":"Deep-ultraviolet photodetectors based on hexagonal boron nitride nanosheets enhanced by localized surface plasmon resonance in Al nanoparticles","volume":"5","author":"Kaushik","year":"2022","journal-title":"ACS Appl. Nano Mater."},{"key":"nanoae1141bib47","doi-asserted-by":"publisher","DOI":"10.1002\/smll.201901606","type":"journal-article","article-title":"Ultrahigh responsivity UV photodetector based on Cu nanostructure\/ZnO QD hybrid architectures","volume":"15","author":"Li","year":"2019","journal-title":"Small"},{"key":"nanoae1141bib48","doi-asserted-by":"publisher","first-page":"10562","DOI":"10.1039\/C7TC03746E","type":"journal-article","article-title":"Construction of GaN\/Ga2O3 p\u2013n junction for an extremely high responsivity self-powered UV photodetector","volume":"5","author":"Li","year":"2017","journal-title":"J. Mater. Chem. C"},{"key":"nanoae1141bib49","doi-asserted-by":"publisher","first-page":"35105","DOI":"10.1021\/acsami.9b11012","type":"journal-article","article-title":"Ultrasensitive, superhigh signal-to-noise ratio, self-powered solar-blind photodetector based on n-Ga2O3\/p-CuSCN core\u2013shell microwire heterojunction","volume":"11","author":"Li","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"nanoae1141bib50","doi-asserted-by":"publisher","first-page":"1908","DOI":"10.1021\/acsphotonics.1c01316","type":"journal-article","article-title":"An AlGaN\/GaN dual channel triangular microcantilever based UV detector","volume":"9","author":"Uppalapati","year":"2022","journal-title":"ACS Photonics"}],"container-title":["Nanotechnology"],"original-title":[],"link":[{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ae1141","content-type":"text\/html","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ae1141\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ae1141","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ae1141\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ae1141\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ae1141\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ae1141\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"similarity-checking"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ae1141\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,21]],"date-time":"2025-10-21T06:13:44Z","timestamp":1761027224000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ae1141"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,10,20]]},"references-count":50,"journal-issue":{"issue":"42","published-online":{"date-parts":[[2025,10,21]]},"published-print":{"date-parts":[[2025,10,20]]}},"URL":"https:\/\/doi.org\/10.1088\/1361-6528\/ae1141","relation":{},"ISSN":["0957-4484","1361-6528"],"issn-type":[{"type":"print","value":"0957-4484"},{"type":"electronic","value":"1361-6528"}],"subject":[],"published":{"date-parts":[[2025,10,20]]},"assertion":[{"value":"Highly sensitive ultraviolet power meter based on two-dimensional van der Waals heterostructure","name":"article_title","label":"Article Title"},{"value":"Nanotechnology","name":"journal_title","label":"Journal Title"},{"value":"paper","name":"article_type","label":"Article Type"},{"value":"\u00a9 2025 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.","name":"copyright_information","label":"Copyright Information"},{"value":"2025-07-30","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2025-10-09","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2025-10-21","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}