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Consequently, the fabricated high-electron-mobility transistors exhibit low off-state leakage, a breakdown field exceeding 2.1 MV cm\n                    <jats:sup>\u22121<\/jats:sup>\n                    , and minimal current collapse of only 10.87%. At 3.6 GHz, the device delivers a high output power density of 13.58 W mm\n                    <jats:sup>\u22121<\/jats:sup>\n                    at a 70 V drain bias and achieves a peak power-added efficiency of 73.06% at 40 V. These results underscore the effectiveness of the AlN SBB with an ultra-thin channel in simultaneously enabling high breakdown strength, high power, and high efficiency, providing a promising solution for next-generation RF power applications.\n                  <\/jats:p>","DOI":"10.1088\/1361-6528\/ae46a5","type":"journal-article","created":{"date-parts":[[2026,2,17]],"date-time":"2026-02-17T22:47:44Z","timestamp":1771368464000},"page":"085702","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":0,"title":["High-performance GaN HEMTs with over 2 MV cm\n                    <sup>\u22121<\/sup>\n                    breakdown field and 73% PAE via an AlN super back barrier\/ultra-thin GaN channel heterostructure"],"prefix":"10.1088","volume":"37","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-0345-6121","authenticated-orcid":true,"given":"Wenjun","family":"Liu","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1864-6953","authenticated-orcid":true,"given":"Yachao","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhizhe","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kai","family":"Su","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1406-1088","authenticated-orcid":true,"given":"Shenglei","family":"Zhao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shengrui","family":"Xu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jinfeng","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yixin","family":"Yao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3737-3436","authenticated-orcid":true,"given":"Baiqi","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yaolong","family":"Dong","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yue","family":"Hao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jincheng","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"266","published-online":{"date-parts":[[2026,2,25]]},"reference":[{"key":"nanoae46a5bib1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2024.112305","type":"journal-article","article-title":"GaN radiofrequency components and power amplifiers for next-generation 5G communications","volume":"297","author":"Yaseen","year":"2025","journal-title":"Microelectron. 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All rights, including for text and data mining, AI training, and similar technologies, are reserved.","name":"copyright_information","label":"Copyright Information"},{"value":"2025-12-03","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2026-02-17","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2026-02-25","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}