{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,29]],"date-time":"2026-05-29T08:04:27Z","timestamp":1780041867559,"version":"3.53.1"},"reference-count":35,"publisher":"IOP Publishing","issue":"22","license":[{"start":{"date-parts":[[2026,5,29]],"date-time":"2026-05-29T00:00:00Z","timestamp":1780012800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/publishingsupport.iopscience.iop.org\/iop-standard\/v1"},{"start":{"date-parts":[[2026,5,29]],"date-time":"2026-05-29T00:00:00Z","timestamp":1780012800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"crossref","award":["62474133"],"award-info":[{"award-number":["62474133"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"crossref"}]},{"DOI":"10.13039\/501100021171","name":"Guangdong Basic and Applied Basic Research Foundation","doi-asserted-by":"crossref","award":["2025A1515011176"],"award-info":[{"award-number":["2025A1515011176"]}],"id":[{"id":"10.13039\/501100021171","id-type":"DOI","asserted-by":"crossref"}]},{"name":"Natural Science Basic Research Program of Shaanxi","award":["2019JCW-14"],"award-info":[{"award-number":["2019JCW-14"]}]},{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"crossref","award":["YJSJ25013"],"award-info":[{"award-number":["YJSJ25013"]}],"id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["Nanotechnology"],"published-print":{"date-parts":[[2026,6,5]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    This paper presents a novel work function modulated Fin-channel schottky barrier diode (WFM-Fin-SBD) with optimized electrical characteristics. The architecture incorporates Ti as the Schottky metal on the Fin top surface to reduce the turn-on voltage (\n                    <jats:italic>V<\/jats:italic>\n                    <jats:sub>on<\/jats:sub>\n                    ) and mitigate forward conduction loss. Simultaneously, Ni is selectively deposited on the Fin sidewalls and trenches bottom. This configuration ensures effective carrier depletion within the fin channel under both zero-bias and reverse-bias conditions, thereby suppressing reverse leakage current and enhancing the breakdown voltage. As a result, the WFM-Fin-SBD achieves superior performance metrics, including a low\n                    <jats:italic>V<\/jats:italic>\n                    <jats:sub>on<\/jats:sub>\n                    of 0.35 V, a specific on-resistance (\n                    <jats:italic>R<\/jats:italic>\n                    <jats:sub>on,sp<\/jats:sub>\n                    ) of 6.25 m\u03a9\u00b7cm\n                    <jats:sup>2<\/jats:sup>\n                    , and a current density of 598 A cm\n                    <jats:sup>\u22122<\/jats:sup>\n                    at 6 V. Under reverse bias, the enhanced depletion effect at the Ni\/Ga\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    interface effectively pinches off the conductive channel, which suppresses the leakage current and enables a breakdown voltage of \u2212241 V, which is approximately 5.5 times that of conventional Ti-SBDs. Furthermore, frequency-dependent conductance measurements reveal that the interface trap density (\n                    <jats:italic>D<\/jats:italic>\n                    <jats:sub>it<\/jats:sub>\n                    ) of the WFM-Fin-SBD is situated between those of the Ti-SBD and the Ni-SBD. The slightly elevated\n                    <jats:italic>D<\/jats:italic>\n                    <jats:sub>it<\/jats:sub>\n                    compared to the Ni-SBD is mainly attributed to the presence of Ti at the Fin top. Meanwhile, TCAD simulations elucidate the underlying physical mechanisms. The proposed WFM-Fin-SBD demonstrates superior performance, positioning it as a promising candidate for high-efficiency power electronics.\n                  <\/jats:p>","DOI":"10.1088\/1361-6528\/ae6f1d","type":"journal-article","created":{"date-parts":[[2026,5,18]],"date-time":"2026-05-18T22:48:54Z","timestamp":1779144534000},"page":"225202","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":0,"title":["Physical mechanism of the work function modulated fin-channel\n                    <i>\u03b2<\/i>\n                    -Ga\n                    <sub>2<\/sub>\n                    O\n                    <sub>3<\/sub>\n                    based diode with a low turn-on voltage"],"prefix":"10.1088","volume":"37","author":[{"ORCID":"https:\/\/orcid.org\/0009-0004-1647-8436","authenticated-orcid":true,"given":"Peng","family":"Liu","sequence":"first","affiliation":[{"name":"Xidian University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7258-9315","authenticated-orcid":true,"given":"Yunlong","family":"He","sequence":"additional","affiliation":[{"name":"Xidian University"},{"name":"Xidian University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaoli","family":"Lu","sequence":"additional","affiliation":[{"name":"Xidian University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xin","family":"Gao","sequence":"additional","affiliation":[{"name":"Xidian University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xichen","family":"Wang","sequence":"additional","affiliation":[{"name":"Xidian University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ying","family":"Zhou","sequence":"additional","affiliation":[{"name":"Xidian University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0908-4509","authenticated-orcid":true,"given":"Man","family":"Hoi Wong","sequence":"additional","affiliation":[{"name":"Hong Kong Univ Sci & Technol, Elect & Comp Engn"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9412-3009","authenticated-orcid":true,"given":"Zhan","family":"Wang","sequence":"additional","affiliation":[{"name":"Xi\u2019an University of Posts and Telecommunications"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xuefeng","family":"Zheng","sequence":"additional","affiliation":[{"name":"Xidian University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1331-6253","authenticated-orcid":true,"given":"Xiaohua","family":"Ma","sequence":"additional","affiliation":[{"name":"Xidian University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yue","family":"Hao","sequence":"additional","affiliation":[{"name":"Xidian University"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2026,5,29]]},"reference":[{"key":"nanoae6f1dbib1","doi-asserted-by":"publisher","DOI":"10.1063\/1.5006941","type":"journal-article","volume":"5","author":"Pearton","year":"2018","journal-title":"Appl. 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All rights, including for text and data mining, AI training, and similar technologies, are reserved.","name":"copyright_information","label":"Copyright Information"},{"value":"2026-03-27","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2026-05-18","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2026-05-29","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}