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However, it has often been overlooked in nanocrystalline films. Herein, we developed a NiO\n                    <jats:italic>\n                      <jats:sub>x<\/jats:sub>\n                    <\/jats:italic>\n                    \/SnO\n                    <jats:sub>2<\/jats:sub>\n                    p\u2013n heterojunction synaptic memristor based on NiO\n                    <jats:italic>\n                      <jats:sub>x<\/jats:sub>\n                    <\/jats:italic>\n                    and SnO\n                    <jats:sub>2<\/jats:sub>\n                    nanocrystals inks, where aging-driven nanocrystal boundary coalescence serves as the origin of improved memristive switching and synaptic emulation. SnO\n                    <jats:sub>2<\/jats:sub>\n                    nanocrystals with amorphous surfaces undergo gradually boundary coalescence after film formation to strengthen bonding between nanocrystals. The ITO\/NiO\n                    <jats:italic>\n                      <jats:sub>x<\/jats:sub>\n                    <\/jats:italic>\n                    \/SnO\n                    <jats:sub>2<\/jats:sub>\n                    \/Ag device exhibits enhanced memristive behavior with aging time at room temperature, and thermal treatment accelerates this aging process. The device emulates synaptic functions of long-term potentiation\/depression, excitatory\/inhibitory postsynaptic current, and short-term\/long-term memory. This work elucidates how aging-driven nanocrystalline evolution facilitates the low-cost fabrication of high-performance neuromorphic devices via solution processing and thermal acceleration.\n                  <\/jats:p>","DOI":"10.1088\/1361-6528\/ae9480","type":"journal-article","created":{"date-parts":[[2026,8,4]],"date-time":"2026-08-04T22:48:32Z","timestamp":1785883712000},"page":"335701","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":0,"title":["Aging-induced nanocrystalline boundary coalescence in solution-process synaptic memristor"],"prefix":"10.1088","volume":"37","author":[{"given":"Lingyu","family":"Xie","sequence":"first","affiliation":[{"name":"School of Electronics and Information, Hangzhou Dianzi University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lehang","family":"Chu","sequence":"additional","affiliation":[{"name":"School of Electronics and Information, Hangzhou Dianzi University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yanhong","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Electronics and Information, Hangzhou Dianzi University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Haoyu","family":"Shen","sequence":"additional","affiliation":[{"name":"School of Electronics and Information, Hangzhou Dianzi University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junming","family":"Xu","sequence":"additional","affiliation":[{"name":"School of Electronics and Information, Hangzhou Dianzi University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1773-7693","authenticated-orcid":true,"given":"Yijie","family":"Gu","sequence":"additional","affiliation":[{"name":"School of Electronics and Information, Hangzhou Dianzi University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9834-6880","authenticated-orcid":true,"given":"Jie","family":"Jiang","sequence":"additional","affiliation":[{"name":"Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics, Central South University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7833-3110","authenticated-orcid":true,"given":"Liang","family":"Chu","sequence":"additional","affiliation":[{"name":"School of Electronics and Information, Hangzhou Dianzi University"},{"name":"State key Laboratory of Extreme Environment Optoelectronic Dynamic Measurement Technology and Instrument, North University of China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2026,8,18]]},"reference":[{"key":"nanoae9480bib1","doi-asserted-by":"publisher","DOI":"10.1016\/j.surfin.2022.101993","type":"journal-article","article-title":"Atomic-scale interfacial diffusion of diamond into titanium: phase transition and layer dependence","volume":"31","author":"Lin","year":"2022","journal-title":"Surf. 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