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Accurate HSE calculation reveals an indirect bandgap of about 4.44\u202feV, which is composed of a flat valence band maximum with largely O-2p orbitals and a slight Ga-3d contribution as well as a dispersive conduction band minimum formed mainly by Ga-4s orbitals, illustrating that n-type conduction could be achieved. Applying \u00b16% strain modulation, the \u223c10% bandgap change is observed due to the bond length variations. The calculated electron mobilities for unstrained 2D cubic-Ga\n 2<\/jats:sub>\n O\n 3<\/jats:sub>\n are 1801.70 cm\n 2<\/jats:sup>\n V\n \u20131<\/jats:sup>\n s\n \u20131<\/jats:sup>\n along\n x<\/jats:italic>\n direction and 240.78 cm\n 2<\/jats:sup>\n V\n \u20131<\/jats:sup>\n s\n \u20131<\/jats:sup>\n along\n y<\/jats:italic>\n direction, which are comparable to those of perfect 2D\n \u03b2<\/jats:italic>\n -Ga\n 2<\/jats:sub>\n O\n 3<\/jats:sub>\n but are far exceed the values of bulk\n \u03b2<\/jats:italic>\n -Ga\n 2<\/jats:sub>\n O\n 3<\/jats:sub>\n . Under +6% strain, electron mobilities increase to 3997.60 and 434.44 cm\n 2<\/jats:sup>\n V\n \u20131<\/jats:sup>\n s\n \u20131<\/jats:sup>\n along\n x<\/jats:italic>\n and\n y<\/jats:italic>\n directions, respectively. With \u00b16% biaxial strains, the mobility anisotropy is ranged from 6.92\u20139.20, which is substantially larger than the value of 1.82 in 2D\n \u03b2<\/jats:italic>\n -Ga\n 2<\/jats:sub>\n O\n 3<\/jats:sub>\n and indicating a strong directional dependence of electron transport at room temperature. The 2D cubic-Ga\n 2<\/jats:sub>\n O\n 3<\/jats:sub>\n combines excellent anisotropic electron mobility, a stable bandgap and an intrinsically flexible structure, highlighting its considerable promise for nanoscale electronic device applications.\n <\/jats:p>","DOI":"10.1088\/1361-6528\/aeb02f","type":"journal-article","created":{"date-parts":[[2026,10,5]],"date-time":"2026-10-05T22:48:03Z","timestamp":1791240483000},"page":"425703","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":0,"title":["Two-dimensional cubic phase Ga\n 2<\/sub>\n O\n 3<\/sub>\n with highly anisotropic mobility and robust wide-bandgap"],"prefix":"10.1088","volume":"37","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-0729-6604","authenticated-orcid":true,"given":"H","family":"Zeng","sequence":"first","affiliation":[{"name":"Hunan University of Science and Engineering"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"W","family":"Tang","sequence":"additional","affiliation":[{"name":"Xiamen University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"C","family":"Ma","sequence":"additional","affiliation":[{"name":"Hunan University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"H F","family":"Xu","sequence":"additional","affiliation":[{"name":"Hunan University of Science and Engineering"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Y R","family":"Xue","sequence":"additional","affiliation":[{"name":"Hunan University of Science and Engineering"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4484-1680","authenticated-orcid":true,"given":"M","family":"Wu","sequence":"additional","affiliation":[{"name":"Xiamen University"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2026,10,20]]},"reference":[{"key":"nanoaeb02fbib1","doi-asserted-by":"publisher","first-page":"724","DOI":"10.1126\/science.add2713","type":"journal-article","article-title":"Toward gallium oxide power electronics","volume":"378","author":"Tadjer","year":"2022","journal-title":"Science"},{"key":"nanoaeb02fbib2","doi-asserted-by":"publisher","first-page":"3900","DOI":"10.1038\/s41467-022-31664-y","type":"journal-article","article-title":"Ultra-wide bandgap semiconductor Ga2O3 power diodes","volume":"13","author":"Zhang","year":"2022","journal-title":"Nat. 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