{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T22:57:03Z","timestamp":1791413823090,"version":"4.3.3"},"reference-count":0,"publisher":"IOP Publishing","license":[{"start":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T00:00:00Z","timestamp":1791331200000},"content-version":"am","delay-in-days":0,"URL":"https:\/\/publishingsupport.iopscience.iop.org\/iop-standard\/v1"},{"start":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T00:00:00Z","timestamp":1791331200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Nanotechnology"],"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Yttrium Iron Garnet YIG (Y 3 Fe 5 O 12 ), is a commonly used material for magnonic devices due to its crystal and chemical structure, which makes the material highly ferromagnetic and enables long-range magnon propagation. Magnonic devices were fabricated by depositing a 390 nm thick thin film of YIG, using low vacuum RF sputtering, on Si substrates with a 240 nm buffer layer of SiO 2 . Two sets of devices were used to study the effect of the Si\/SiO 2 interface on the YIG. The first set features patterned hole pairs on the SiO 2 , which was created using fluorine etching. Patterned samples were used as seed nucleation points to study the crystallization behavior. The second set was a non-patterned Si\/SiO 2 with YIG deposited uniformly on the top. Post-deposition recrystallization of the YIG film was accomplished in a horizontal furnace under O 2 atmosphere, between 750 \u00b0C and 850 \u00b0C. EDS shows that YIG is off-stoichiometric and rich in iron and oxygen, as deposited. There was also no interaction between the Si\/SiO 2 substrate and the YIG, as there was no change in post annealing stoichiometry. XRD patterns show that full crystallization occurred at the 800 \u00b0C for 1 h annealing for the patterned samples, while for the non-patterned sample, crystallization continues to progress at 750 \u00b0C after 3 h. The thin film YIG appears to form an intra-phase at temperatures below 800\u00b0C, and segregates into Fe 2 O 3 and Y 2 O 3 . Raman spectroscopy showed that YIG started to crystallize at the seed nucleation points and propagated to the entire thin film YIG. Ellipsometry measurements are consistent with this conclusion; the real part of the refractive index of the amorphous sample was n\u2248 2.6, while for the crystallized sample annealed at 800 \u00b0C for 1 h, it was n\u2248 5.1. Finally, we noticed that longer annealing times or high-temperature annealing present strong tensile stress on the YIG, which also results in the formation of polycrystalline rather than single-crystal YIG. This work shows a pathway for designing suspended magnonic device. If YIG is sputtered and not grown, we can build a device that can be released once we obtain a uniform, stoichiometric, and recrystallized YIG thin film. The released YIG device could then be transferred to other substrates.<\/jats:p>","DOI":"10.1088\/1361-6528\/aeb12b","type":"journal-article","created":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T22:48:31Z","timestamp":1791413311000},"source":"Crossref","is-referenced-by-count":0,"title":["Post Annealing Crystallization behavior of RF Sputtered Yttrium Iron Garnet thin films on Si\/SiO2 patterned substrates"],"prefix":"10.1088","author":[{"ORCID":"https:\/\/orcid.org\/0009-0003-3459-8813","authenticated-orcid":false,"given":"Maria","family":"Roman","sequence":"first","affiliation":[{"name":"University of New Mexico Centennial Science and Engineering Library"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tito","family":"Busani","sequence":"additional","affiliation":[{"name":"University of New Mexico Centennial Science and Engineering Library"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Aleem","family":"Siddiqui","sequence":"additional","affiliation":[{"name":"Sandia National Laboratories"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2026,10,7]]},"container-title":["Nanotechnology"],"original-title":[],"link":[{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/aeb12b","content-type":"text\/html","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/aeb12b\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/aeb12b\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/aeb12b\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T22:48:32Z","timestamp":1791413312000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/aeb12b"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,10,7]]},"references-count":0,"URL":"https:\/\/doi.org\/10.1088\/1361-6528\/aeb12b","relation":{},"ISSN":["0957-4484","1361-6528"],"issn-type":[{"value":"0957-4484","type":"print"},{"value":"1361-6528","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,10,7]]}}}