{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,13]],"date-time":"2026-10-13T23:44:37Z","timestamp":1791935077918,"version":"4.3.4"},"reference-count":0,"publisher":"IOP Publishing","license":[{"start":{"date-parts":[[2026,10,13]],"date-time":"2026-10-13T00:00:00Z","timestamp":1791849600000},"content-version":"am","delay-in-days":0,"URL":"https:\/\/publishingsupport.iopscience.iop.org\/iop-standard\/v1"},{"start":{"date-parts":[[2026,10,13]],"date-time":"2026-10-13T00:00:00Z","timestamp":1791849600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Nanotechnology"],"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Memristors that combine metal-oxide thin films with two-dimensional graphene electrodes hold immense promise for high-density, energy-efficient neuromorphic hardware. Here, we demonstrate a vertical memristor based on a single-crystalline rutile TiO\u2082 thin film (~150 nm) sandwiched between a chemical-vapor-deposited monolayer graphene bottom electrode and an Ag top electrode. The atomically flat graphene\/TiO\u2082 interface yields exceptional resistive switching uniformity, ultralow leakage currents, and a high resistance ratio. The devices exhibit forming-free bipolar switching with an ultralow set voltage of +0.45 V and reset voltage of -0.35 V, a high ON\/OFF resistance ratio exceeding 2 \u00d7 10\u2075, and a read endurance beyond 10\u2077 cycles without degradation. High-temperature retention measurements confirm stable resistance states for over 10\u2075 s at 85 \u00b0C with an Arrhenius activation energy of 1.1 eV, and cycle-to-cycle and device-todevice variability in both high-and low-resistance states remains below 3.2% (n = 20 devices, 100 cycles each). By precisely controlling the compliance current, we achieve 64 distinct, linearly spaced conductance levels, enabling 6-bit-per-cell multilevel storage. Energy consumption per switching event is calculated as 87 fJ (E = V \u00d7 I \u00d7 \u03c4 = 0.45 V \u00d7 3.9 \u03bcA \u00d7 50 ns), positioning this platform among the most energy-efficient memristive devices reported. Field-emission scanning electron microscopy (FESEM) reveals a uniform TiO\u2082 thin film morphology on graphene, and Xray photoelectron spectroscopy (XPS) confirms a Ti:O stoichiometry with 15% oxygen vacancy concentration. The high resistance state (~20 G\u03a9) is attributed to the atomically flat graphene\/TiO\u2082 interface suppressing leakage, nanoconfinement of the switching volume, and a Schottky barrier at the Ag\/TiO\u2082 interface (\u03b5\u1d63 \u2248 86). These metrics position the TiO\u2082 thin film\/graphene memristor as a robust, scalable building block for next-generation in-memory computing and neuromorphic processors.<\/jats:p>","DOI":"10.1088\/1361-6528\/aeb386","type":"journal-article","created":{"date-parts":[[2026,10,13]],"date-time":"2026-10-13T22:48:18Z","timestamp":1791931698000},"source":"Crossref","is-referenced-by-count":0,"title":["TiO\u2082 thin-film-on-graphene memristors: a high-uniformity, multilevel-capable platform for ultralow-energy neuromorphic systems"],"prefix":"10.1088","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-0132-9751","authenticated-orcid":false,"given":"P","family":"Sivakumar","sequence":"first","affiliation":[{"name":"Government Arts College, Elaymuthur pirivu"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"S","family":"Srikanth","sequence":"additional","affiliation":[{"name":"Chikkanna Govt. Arts College"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"C","family":"Devi","sequence":"additional","affiliation":[{"name":"Jai Shriram Engineering College"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"S P","family":"Meena","sequence":"additional","affiliation":[{"name":"RVS Technical campus"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1882-154X","authenticated-orcid":false,"given":"M","family":"Malaidurai","sequence":"additional","affiliation":[{"name":"Indian School of Mines Department of Applied Physics"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2026,10,13]]},"container-title":["Nanotechnology"],"original-title":[],"link":[{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/aeb386","content-type":"text\/html","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/aeb386\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/aeb386\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/aeb386\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,13]],"date-time":"2026-10-13T22:48:18Z","timestamp":1791931698000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/aeb386"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,10,13]]},"references-count":0,"URL":"https:\/\/doi.org\/10.1088\/1361-6528\/aeb386","relation":{},"ISSN":["0957-4484","1361-6528"],"issn-type":[{"value":"0957-4484","type":"print"},{"value":"1361-6528","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,10,13]]}}}