{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,5]],"date-time":"2026-05-05T12:26:15Z","timestamp":1777983975108,"version":"3.51.4"},"reference-count":43,"publisher":"IOP Publishing","issue":"4","license":[{"start":{"date-parts":[[2026,4,24]],"date-time":"2026-04-24T00:00:00Z","timestamp":1776988800000},"content-version":"vor","delay-in-days":23,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,4,24]],"date-time":"2026-04-24T00:00:00Z","timestamp":1776988800000},"content-version":"tdm","delay-in-days":23,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"},{"start":{"date-parts":[[2026,4,24]],"date-time":"2026-04-24T00:00:00Z","timestamp":1776988800000},"content-version":"vor","delay-in-days":23,"URL":"https:\/\/publishingsupport.iopscience.iop.org\/questions\/alternative-author-rights-policies\/"},{"start":{"date-parts":[[2026,4,24]],"date-time":"2026-04-24T00:00:00Z","timestamp":1776988800000},"content-version":"vor","delay-in-days":23,"URL":"https:\/\/publishingsupport.iopscience.iop.org\/questions\/alternative-author-rights-policies\/"}],"funder":[{"name":"SOFT Foundry Institute"},{"name":"Inter-University Semiconductor Research Center"},{"DOI":"10.13039\/501100019211","name":"Institute of Engineering Research","doi-asserted-by":"crossref","id":[{"id":"10.13039\/501100019211","id-type":"DOI","asserted-by":"crossref"}]},{"name":"Research Institute of Advanced Materials"},{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"crossref","award":["RS-2022-NR070586"],"award-info":[{"award-number":["RS-2022-NR070586"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"crossref"}]},{"name":"Institute of Applied Physics"},{"name":"Ministry of Trade, Industry & Energy","award":["RS-2023-00301731"],"award-info":[{"award-number":["RS-2023-00301731"]}]},{"name":"Samsung Research Funding & Incubation Center of Samsung Electronics","award":["SRFC-MA2302-01"],"award-info":[{"award-number":["SRFC-MA2302-01"]}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["Rep. Prog. Phys."],"published-print":{"date-parts":[[2026,4,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    Strain relaxation at lattice-mismatched interfaces is critical for epitaxial growth and high-quality single-crystal films. While van der Waals (vdW) epitaxy is considered as a promising platform due to its high tolerance to lattice mismatch, its actual response to lattice mismatch remains largely unexplored. Here, we investigate the effect of lattice mismatch on vdW interfaces by epitaxially growing MoS\n                    <jats:sub>2<\/jats:sub>\n                    on WS\n                    <jats:sub>2<\/jats:sub>\n                    or WSe\n                    <jats:sub>2<\/jats:sub>\n                    substrate. annular dark-field scanning transmission electron microscopy reveals that MoS\n                    <jats:sub>2<\/jats:sub>\n                    \/WS\n                    <jats:sub>2<\/jats:sub>\n                    with a negligible lattice mismatch of \u223c0.22% forms a fully commensurate structure, whereas MoS\n                    <jats:sub>2<\/jats:sub>\n                    \/WSe\n                    <jats:sub>2<\/jats:sub>\n                    with a large lattice mismatch of \u223c3.96% exhibits non-uniform moir\u00e9 patterns, characteristic of an incommensurate interface. Detailed analysis shows that the MoS\n                    <jats:sub>2<\/jats:sub>\n                    \/WS\n                    <jats:sub>2<\/jats:sub>\n                    hetero-bilayers exhibit perfectly aligned structure through compression of MoS\n                    <jats:sub>2<\/jats:sub>\n                    , whereas the MoS\n                    <jats:sub>2<\/jats:sub>\n                    \/WSe\n                    <jats:sub>2<\/jats:sub>\n                    hetero-bilayers show elongation and rotation of moir\u00e9 orientation driven by tensile strain. Notably, even small twist angles induce significant changes in moir\u00e9 orientation, resulting in bent fringes that are indicative of local rotational distortions. Large lattice mismatch drives localized lattice distortion, where rotation of the MoS\n                    <jats:sub>2<\/jats:sub>\n                    lattice emerges as an energetically favorable mechanism for strain release, in contrast to commensurate alignment in small-mismatch systems. Our results establish moir\u00e9 pattern analysis as a powerful framework for directly visualizing spatially varying strain and its relaxation pathways in vdW hetero-bilayers. Our work reveals previously inaccessible interfacial deformation modes in vdW hetero-bilayers and establishes moir\u00e9 analysis as a powerful platform for strain engineering in 2D electronic and optoelectronic materials.\n                  <\/jats:p>","DOI":"10.1088\/1361-6633\/ae5ea2","type":"journal-article","created":{"date-parts":[[2026,4,13]],"date-time":"2026-04-13T22:50:58Z","timestamp":1776120658000},"page":"048005","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":0,"title":["Visualizing lattice-mismatch-dependent strain relaxation in epitaxially grown MoS\n                    <sub>2<\/sub>\n                    \/WS\n                    <sub>2<\/sub>\n                    and MoS\n                    <sub>2<\/sub>\n                    \/WSe\n                    <sub>2<\/sub>\n                    hetero-bilayers"],"prefix":"10.1088","volume":"89","author":[{"ORCID":"https:\/\/orcid.org\/0009-0005-7957-5556","authenticated-orcid":true,"given":"Jinwoo","family":"Kim","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0001-3797-9473","authenticated-orcid":true,"given":"Ingyu","family":"Yoo","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jaewoong","family":"Joo","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hyoungseok","family":"Lee","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0004-4381-7069","authenticated-orcid":true,"given":"Jundong","family":"Yeo","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5151-3370","authenticated-orcid":true,"given":"Jian-Min","family":"Zuo","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Miyoung","family":"Kim","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3028-867X","authenticated-orcid":true,"given":"Gwan-Hyoung","family":"Lee","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"266","published-online":{"date-parts":[[2026,4,24]]},"reference":[{"key":"ropae5ea2bib1","doi-asserted-by":"publisher","first-page":"554","DOI":"10.1038\/nmat3633","type":"journal-article","article-title":"Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide","volume":"12","author":"van der Zande","year":"2013","journal-title":"Nat. Mater."},{"key":"ropae5ea2bib2","doi-asserted-by":"publisher","first-page":"355","DOI":"10.1038\/s41586-018-0008-3","type":"journal-article","article-title":"A library of atomically thin metal chalcogenides","volume":"556","author":"Zhou","year":"2018","journal-title":"Nature"},{"key":"ropae5ea2bib3","doi-asserted-by":"publisher","first-page":"69","DOI":"10.1038\/s41586-022-04523-5","type":"journal-article","article-title":"Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire","volume":"605","author":"Liu","year":"2022","journal-title":"Nature"},{"key":"ropae5ea2bib4","doi-asserted-by":"publisher","first-page":"1201","DOI":"10.1038\/s41565-021-00963-8","type":"journal-article","article-title":"Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire","volume":"16","author":"Li","year":"2021","journal-title":"Nat. Nanotechnol."},{"key":"ropae5ea2bib5","doi-asserted-by":"publisher","first-page":"5036","DOI":"10.1021\/acsnano.0c01478","type":"journal-article","article-title":"Epitaxial growth of centimeter-scale single-crystal MoS2 monolayer on Au(111)","volume":"14","author":"Yang","year":"2020","journal-title":"ACS Nano"},{"key":"ropae5ea2bib6","doi-asserted-by":"publisher","first-page":"312","DOI":"10.1021\/acsnano.2c07978","type":"journal-article","article-title":"Epitaxial growth of high-quality monolayer MoS2 single crystals on low-symmetry vicinal Au(101) facets with different miller indices","volume":"17","author":"Hu","year":"2023","journal-title":"ACS Nano"},{"key":"ropae5ea2bib7","doi-asserted-by":"publisher","first-page":"8617","DOI":"10.1021\/nn503412w","type":"journal-article","article-title":"Dendritic, transferable, strictly monolayer MoS2 flakes synthesized on SrTiO3 single crystals for efficient electrocatalytic applications","volume":"8","author":"Zhang","year":"2014","journal-title":"ACS Nano"},{"key":"ropae5ea2bib8","doi-asserted-by":"publisher","first-page":"7564","DOI":"10.1021\/acsnano.0c03414","type":"journal-article","article-title":"Flat bands and mechanical deformation effects in the moir\u00e9 superlattice of MoS2-WSe2 heterobilayers","volume":"14","author":"Waters","year":"2020","journal-title":"ACS Nano"},{"key":"ropae5ea2bib9","doi-asserted-by":"publisher","first-page":"1092","DOI":"10.1038\/s41565-021-00942-z","type":"journal-article","article-title":"Heteroepitaxial van der Waals semiconductor superlattices","volume":"16","author":"Jin","year":"2021","journal-title":"Nat. Nanotechnol."},{"key":"ropae5ea2bib10","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202205403","type":"journal-article","article-title":"Lattice-mismatch-driven small-angle moir\u00e9 twists in epitaxially grown 2D vertical layered heterostructures","volume":"34","author":"Lu","year":"2022","journal-title":"Adv. Mater."},{"key":"ropae5ea2bib11","doi-asserted-by":"publisher","first-page":"973","DOI":"10.1126\/science.abm5734","type":"journal-article","article-title":"Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides","volume":"376","author":"Rog\u00e9e","year":"2022","journal-title":"Science"},{"key":"ropae5ea2bib12","doi-asserted-by":"publisher","first-page":"339","DOI":"10.1038\/s41563-023-01596-z","type":"journal-article","article-title":"Van der Waals epitaxy of tunable moir\u00e9s enabled by alloying","volume":"23","author":"Fortin-Desch\u00eanes","year":"2024","journal-title":"Nat. Mater."},{"key":"ropae5ea2bib13","doi-asserted-by":"publisher","first-page":"1356","DOI":"10.1038\/s41467-018-03869-7","type":"journal-article","article-title":"Negative circular polarization emissions from WSe2\/MoSe2 commensurate heterobilayers","volume":"9","author":"Hsu","year":"2018","journal-title":"Nat. Commun."},{"key":"ropae5ea2bib14","doi-asserted-by":"publisher","first-page":"3123","DOI":"10.1007\/s12274-019-2564-8","type":"journal-article","article-title":"Vapor growth of WSe2\/WS2 heterostructures with stacking dependent optical properties","volume":"12","author":"Wu","year":"2019","journal-title":"Nano Res."},{"key":"ropae5ea2bib15","doi-asserted-by":"publisher","first-page":"617","DOI":"10.1038\/s41563-020-0670-3","type":"journal-article","article-title":"Twist-angle-dependent interlayer exciton diffusion in WS2\u2013WSe2 heterobilayers","volume":"19","author":"Yuan","year":"2020","journal-title":"Nat. Mater."},{"key":"ropae5ea2bib16","doi-asserted-by":"publisher","first-page":"152","DOI":"10.1038\/s41565-017-0022-x","type":"journal-article","article-title":"Strain distributions and their influence on electronic structures of WSe2\u2013MoS2 laterally strained heterojunctions","volume":"13","author":"Zhang","year":"2018","journal-title":"Nat. Nanotechnol."},{"key":"ropae5ea2bib17","doi-asserted-by":"publisher","first-page":"1131","DOI":"10.1126\/science.aao5360","type":"journal-article","article-title":"Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain","volume":"359","author":"Xie","year":"2018","journal-title":"Science"},{"key":"ropae5ea2bib18","doi-asserted-by":"publisher","first-page":"2989","DOI":"10.1038\/s41467-023-38504-7","type":"journal-article","article-title":"Rotational and dilational reconstruction in transition metal dichalcogenide moir\u00e9 bilayers","volume":"14","author":"Van Winkle","year":"2023","journal-title":"Nat. Commun."},{"key":"ropae5ea2bib19","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202408367","type":"journal-article","article-title":"Robust growth of 2D transition metal dichalcogenide vertical heterostructures via ammonium-assisted CVD strategy","volume":"36","author":"Li","year":"2024","journal-title":"Adv. Mater."},{"key":"ropae5ea2bib20","doi-asserted-by":"publisher","first-page":"1849","DOI":"10.1021\/acs.nanolett.7b05125","type":"journal-article","article-title":"Quantum-confined electronic states arising from the moir\u00e9 pattern of MoS2\u2013WSe2 heterobilayers","volume":"18","author":"Pan","year":"2018","journal-title":"Nano Lett."},{"key":"ropae5ea2bib21","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.1601459","type":"journal-article","article-title":"Interlayer couplings, moir\u00e9 patterns, and 2D electronic superlattices in MoS2\/WSe2 hetero-bilayers","volume":"3","author":"Zhang","year":"2017","journal-title":"Sci. Adv."},{"key":"ropae5ea2bib22","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201901351","type":"journal-article","article-title":"Rational kinetics control toward universal growth of 2D vertically stacked heterostructures","volume":"31","author":"Li","year":"2019","journal-title":"Adv. Mater."},{"key":"ropae5ea2bib23","doi-asserted-by":"publisher","first-page":"4550","DOI":"10.1021\/acsnano.0c00088","type":"journal-article","article-title":"Twist angle-dependent atomic reconstruction and moir\u00e9 patterns in transition metal dichalcogenide heterostructures","volume":"14","author":"Rosenberger","year":"2020","journal-title":"ACS Nano"},{"key":"ropae5ea2bib24","doi-asserted-by":"publisher","first-page":"448","DOI":"10.1038\/s41563-019-0346-z","type":"journal-article","article-title":"Atomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene","volume":"18","author":"Yoo","year":"2019","journal-title":"Nat. Mater."},{"key":"ropae5ea2bib25","doi-asserted-by":"publisher","first-page":"992","DOI":"10.1038\/s41563-023-01595-0","type":"journal-article","article-title":"Operando electron microscopy investigation of polar domain dynamics in twisted van der Waals homobilayers","volume":"22","author":"Ko","year":"2023","journal-title":"Nat. Mater."},{"key":"ropae5ea2bib26","doi-asserted-by":"publisher","first-page":"ozae044.932","DOI":"10.1093\/mam\/ozae044.932","type":"journal-article","article-title":"Probing local strain and orientation in layered materials using 4D-STEM moir\u00e9 analysis","volume":"30","author":"Schweizer","year":"2024","journal-title":"Microsc. Microanal."},{"key":"ropae5ea2bib27","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/j.physe.2015.03.015","type":"journal-article","article-title":"Strain effects on electronic states and lattice vibration of monolayer MoS2","volume":"71","author":"Miao","year":"2015","journal-title":"Physica E"},{"key":"ropae5ea2bib28","doi-asserted-by":"publisher","first-page":"608","DOI":"10.1038\/s41467-017-00516-5","type":"journal-article","article-title":"Strain-engineered growth of two-dimensional materials","volume":"8","author":"Ahn","year":"2017","journal-title":"Nat. Commun."},{"key":"ropae5ea2bib29","doi-asserted-by":"publisher","first-page":"14669","DOI":"10.1039\/D3NR01687K","type":"journal-article","article-title":"Built-in tensile strain dependence on the lateral size of monolayer MoS2 synthesized by liquid precursor chemical vapor deposition","volume":"15","author":"Seravalli","year":"2023","journal-title":"Nanoscale"},{"key":"ropae5ea2bib30","doi-asserted-by":"publisher","first-page":"30487","DOI":"10.1021\/acsnano.5c11757","type":"journal-article","article-title":"Strain-mediated control of domain structures in 3R-MoS2 bilayers synthesized by vapor\u2013liquid\u2013solid growth in chemical vapor deposition","volume":"19","author":"Hong","year":"2025","journal-title":"ACS Nano"},{"key":"ropae5ea2bib31","doi-asserted-by":"publisher","first-page":"14798","DOI":"10.1021\/acsnano.0c03515","type":"journal-article","article-title":"Uncovering the effects of metal contacts on monolayer MoS2","volume":"14","author":"Schauble","year":"2020","journal-title":"ACS Nano"},{"key":"ropae5ea2bib32","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-019-55776-6","type":"journal-article","article-title":"Coupled charge transfer dynamics and photoluminescence quenching in monolayer MoS2 decorated with WS2 quantum dots","volume":"9","author":"Mawlong","year":"2019","journal-title":"Sci. Rep."},{"key":"ropae5ea2bib33","doi-asserted-by":"publisher","first-page":"337","DOI":"10.3390\/nano12030337","type":"journal-article","article-title":"STEM tools for semiconductor characterization: beyond high-resolution imaging","volume":"12","author":"de la Mata","year":"2022","journal-title":"Nanomater"},{"key":"ropae5ea2bib34","doi-asserted-by":"publisher","DOI":"10.1016\/j.ultramic.2019.112863","type":"journal-article","article-title":"STEM beam channeling in BaSnO3\/LaAlO3 perovskite bilayers and visualization of 2D misfit dislocation network","volume":"208","author":"Yun","year":"2020","journal-title":"Ultramicroscopy"},{"key":"ropae5ea2bib35","doi-asserted-by":"publisher","DOI":"10.1016\/j.micron.2024.103679","type":"journal-article","article-title":"Moir\u00e9 fringe imaging of heterostructures by scanning transmission electron microscopy","volume":"185","author":"Hu","year":"2024","journal-title":"Micron"},{"key":"ropae5ea2bib36","doi-asserted-by":"publisher","first-page":"282","DOI":"10.1038\/nmat2968","type":"journal-article","article-title":"Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride","volume":"10","author":"Xue","year":"2011","journal-title":"Nat. Mater."},{"key":"ropae5ea2bib37","doi-asserted-by":"publisher","first-page":"2236","DOI":"10.1038\/s41467-020-15683-1","type":"journal-article","article-title":"Semiconductor to metal transition in two-dimensional gold and its van der Waals heterostack with graphene","volume":"11","author":"Forti","year":"2020","journal-title":"Nat. Commun."},{"key":"ropae5ea2bib38","doi-asserted-by":"publisher","first-page":"382","DOI":"10.1038\/nphys2272","type":"journal-article","article-title":"Emergence of superlattice Dirac points in graphene on hexagonal boron nitride","volume":"8","author":"Yankowitz","year":"2012","journal-title":"Nat. Phys."},{"key":"ropae5ea2bib39","doi-asserted-by":"publisher","first-page":"11256","DOI":"10.1073\/pnas.1309394110","type":"journal-article","article-title":"Strain solitons and topological defects in bilayer graphene","volume":"110","author":"Alden","year":"2013","journal-title":"Proc. Natl Acad. Sci."},{"key":"ropae5ea2bib40","doi-asserted-by":"publisher","first-page":"533","DOI":"10.1038\/nature12780","type":"journal-article","article-title":"Dislocations in bilayer graphene","volume":"505","author":"Butz","year":"2014","journal-title":"Nature"},{"key":"ropae5ea2bib41","doi-asserted-by":"publisher","first-page":"23","DOI":"10.9729\/AM.2015.45.1.23","type":"journal-article","article-title":"Dark-field transmission electron microscopy imaging technique to visualize the local structure of two-dimensional material; graphene","volume":"45","author":"Na","year":"2015","journal-title":"Appl. Microsc."},{"key":"ropae5ea2bib42","doi-asserted-by":"publisher","DOI":"10.1038\/srep12508","type":"journal-article","article-title":"The hide-and-seek of grain boundaries from moir\u00e9 pattern fringe of two-dimensional graphene","volume":"5","author":"Kim","year":"2015","journal-title":"Sci. Rep."},{"key":"ropae5ea2bib43","doi-asserted-by":"publisher","first-page":"891","DOI":"10.1021\/acsaelm.2c00013","type":"journal-article","article-title":"Moir\u00e9 pattern dislocation in continuous atomic lattice of monolayer h-BN","volume":"4","author":"Yang","year":"2022","journal-title":"ACS Appl. Electron. Mater."}],"container-title":["Reports on Progress in Physics"],"original-title":[],"link":[{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6633\/ae5ea2","content-type":"text\/html","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6633\/ae5ea2\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6633\/ae5ea2","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6633\/ae5ea2\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6633\/ae5ea2\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6633\/ae5ea2\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6633\/ae5ea2\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"similarity-checking"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6633\/ae5ea2\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,4,24]],"date-time":"2026-04-24T07:15:26Z","timestamp":1777014926000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6633\/ae5ea2"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,4,1]]},"references-count":43,"journal-issue":{"issue":"4","published-online":{"date-parts":[[2026,4,24]]},"published-print":{"date-parts":[[2026,4,1]]}},"URL":"https:\/\/doi.org\/10.1088\/1361-6633\/ae5ea2","relation":{"has-review":[{"id-type":"doi","id":"10.1088\/1361-6633\/AE5EA2\/v2\/response1","asserted-by":"object"},{"id-type":"doi","id":"10.1088\/1361-6633\/AE5EA2\/v3\/decision1","asserted-by":"object"},{"id-type":"doi","id":"10.1088\/1361-6633\/AE5EA2\/v3\/response1","asserted-by":"object"},{"id-type":"doi","id":"10.1088\/1361-6633\/AE5EA2\/v2\/decision1","asserted-by":"object"},{"id-type":"doi","id":"10.1088\/1361-6633\/AE5EA2\/v1\/review2","asserted-by":"object"},{"id-type":"doi","id":"10.1088\/1361-6633\/AE5EA2\/v2\/review1","asserted-by":"object"},{"id-type":"doi","id":"10.1088\/1361-6633\/AE5EA2\/v1\/review1","asserted-by":"object"},{"id-type":"doi","id":"10.1088\/1361-6633\/AE5EA2\/v1\/decision1","asserted-by":"object"},{"id-type":"doi","id":"10.1088\/1361-6633\/AE5EA2\/v2\/review2","asserted-by":"object"}]},"ISSN":["0034-4885","1361-6633"],"issn-type":[{"value":"0034-4885","type":"print"},{"value":"1361-6633","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,4,1]]},"assertion":[{"value":"Visualizing lattice-mismatch-dependent strain relaxation in epitaxially grown MoS\n                      2\n                      \/WS\n                      2\n                      and MoS\n                      2\n                      \/WSe\n                      2\n                      hetero-bilayers","name":"article_title","label":"Article Title"},{"value":"Reports on Progress in Physics","name":"journal_title","label":"Journal Title"},{"value":"paper","name":"article_type","label":"Article Type"},{"value":"\u00a9 2026 The Author(s). Published by IOP Publishing Ltd","name":"copyright_information","label":"Copyright Information"},{"value":"2026-01-09","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2026-04-13","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2026-04-24","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}