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Technol."],"published-print":{"date-parts":[[2018,1,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+\n                    <jats:italic>GW<\/jats:italic>\n                    formalism. We find that\n                    <jats:inline-formula>\n                      <jats:tex-math>\n                        \n                      <\/jats:tex-math>\n                      <mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" overflow=\"scroll\">\n                        <mml:mo stretchy=\"false\">(<\/mml:mo>\n                        <mml:msub>\n                          <mml:mrow>\n                            <mml:mi mathvariant=\"normal\">Sn<\/mml:mi>\n                          <\/mml:mrow>\n                          <mml:mrow>\n                            <mml:mi mathvariant=\"normal\">Zn<\/mml:mi>\n                          <\/mml:mrow>\n                        <\/mml:msub>\n                        <mml:mo stretchy=\"false\">)<\/mml:mo>\n                      <\/mml:math>\n                    <\/jats:inline-formula>\n                    and\n                    <jats:inline-formula>\n                      <jats:tex-math>\n                        \n                      <\/jats:tex-math>\n                      <mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" overflow=\"scroll\">\n                        <mml:mo stretchy=\"false\">(<\/mml:mo>\n                        <mml:msub>\n                          <mml:mrow>\n                            <mml:mi mathvariant=\"normal\">Ge<\/mml:mi>\n                          <\/mml:mrow>\n                          <mml:mrow>\n                            <mml:mi mathvariant=\"normal\">Zn<\/mml:mi>\n                          <\/mml:mrow>\n                        <\/mml:msub>\n                        <mml:mo stretchy=\"false\">)<\/mml:mo>\n                      <\/mml:math>\n                    <\/jats:inline-formula>\n                    introduce isolated energy levels deep in the band gap of ZnTe, derived from Sn-\n                    <jats:inline-formula>\n                      <jats:tex-math>\n                        \n                      <\/jats:tex-math>\n                      <mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" overflow=\"scroll\">\n                        <mml:mn>5<\/mml:mn>\n                        <mml:mi>s<\/mml:mi>\n                      <\/mml:math>\n                    <\/jats:inline-formula>\n                    and Ge-\n                    <jats:inline-formula>\n                      <jats:tex-math>\n                        \n                      <\/jats:tex-math>\n                      <mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" overflow=\"scroll\">\n                        <mml:mn>4<\/mml:mn>\n                        <mml:mi>s<\/mml:mi>\n                      <\/mml:math>\n                    <\/jats:inline-formula>\n                    states, respectively. Moreover, the incorporation of Sn and Ge on the Zn site is favored in\n                    <jats:italic>p<\/jats:italic>\n                    -type ZnTe, in both Zn-rich and Te-rich environments. The optical absorption spectra obtained by solving the Bethe\u2013Salpeter equation reveals that sub-bandgap absorptance is greatly enhanced due to the formation of the intermediate band. Our results suggest that Sn- and Ge-doped ZnTe would be a suitable material for the development of intermediate-band solar cells, which have the potential to achieve efficiencies beyond the single-junction limit.\n                  <\/jats:p>","DOI":"10.1088\/1361-6641\/aa9a8b","type":"journal-article","created":{"date-parts":[[2017,11,14]],"date-time":"2017-11-14T10:15:35Z","timestamp":1510654535000},"page":"015004","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":10,"title":["Defect properties of Sn- and Ge-doped ZnTe: suitability for intermediate-band solar cells"],"prefix":"10.1088","volume":"33","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-6928-8696","authenticated-orcid":false,"given":"Mauricio A","family":"Flores","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"266","published-online":{"date-parts":[[2017,12,5]]},"reference":[{"key":"sstaa9a8bbib1","doi-asserted-by":"publisher","first-page":"1886","DOI":"10.1116\/1.1507344","type":"journal-article","volume":"20","author":"Shan","year":"2002","journal-title":"J. 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