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To assess their dynamical transport properties we investigate \n \n \n \n \n P<\/mml:mi>\n d<\/mml:mi>\n S<\/mml:mi>\n e<\/mml:mi>\n <\/mml:mrow>\n \n 2<\/mml:mn>\n <\/mml:mrow>\n <\/mml:msub>\n <\/mml:math>\n \n <\/jats:inline-formula> n-MOSFETs by using microwave admittance spectroscopy. We report on surface channel inversion-depletion-accumulation behaviors with a depletion length of \n \n \n 15<\/mml:mn>\n \n n<\/mml:mi>\n m<\/mml:mi>\n <\/mml:mrow>\n <\/mml:math>\n \n <\/jats:inline-formula>, a mobility of \n \n \n 110<\/mml:mn>\n \n \n c<\/mml:mi>\n m<\/mml:mi>\n <\/mml:mrow>\n 2<\/mml:mn>\n <\/mml:msup>\n \u2009<\/mml:mtext>\n \n \n V<\/mml:mi>\n <\/mml:mrow>\n \n \u2212<\/mml:mo>\n 1<\/mml:mn>\n <\/mml:mrow>\n <\/mml:msup>\n \u2009<\/mml:mtext>\n \n \n s<\/mml:mi>\n <\/mml:mrow>\n \n \u2212<\/mml:mo>\n 1<\/mml:mn>\n <\/mml:mrow>\n <\/mml:msup>\n <\/mml:math>\n \n <\/jats:inline-formula>, and a bulk bandgap of \n \n \n 0.15<\/mml:mn>\n \n e<\/mml:mi>\n V<\/mml:mi>\n <\/mml:mrow>\n <\/mml:math>\n \n <\/jats:inline-formula>. Our 10\u2009\u00b5<\/jats:italic>m long devices have an electronic cut-off frequency in the GHz range promising a large gain-bandwidth product, competitive with that of III\u2013V (InAs) and II\u2013VI (HgCdTe) devices. The integration of bulk absorption and surface readout in \n \n \n \n \n P<\/mml:mi>\n d<\/mml:mi>\n S<\/mml:mi>\n e<\/mml:mi>\n <\/mml:mrow>\n \n 2<\/mml:mn>\n <\/mml:mrow>\n <\/mml:msub>\n <\/mml:math>\n \n <\/jats:inline-formula>-MOSFETs is a monolithic geometry suitable for fast IR detection in the application-rich 1\u2013\n \n \n 10<\/mml:mn>\n \u03bc<\/mml:mi>\n \n m<\/mml:mi>\n <\/mml:mrow>\n <\/mml:math>\n \n <\/jats:inline-formula> range, which includes molecular spectroscopy, atmospheric communications and thermal sensing.<\/jats:p>","DOI":"10.1088\/2053-1583\/abfe9f","type":"journal-article","created":{"date-parts":[[2021,5,6]],"date-time":"2021-05-06T22:43:50Z","timestamp":1620341030000},"page":"035035","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":2,"title":["Microwave surface transport in narrow-bandgap \n\t \n\t PdSe2\n\t \n\t -MOSFETs"],"prefix":"10.1088","volume":"8","author":[{"given":"R","family":"Le Goff","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"M","family":"Rosticher","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Y","family":"Peng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8825-7198","authenticated-orcid":false,"given":"Z","family":"Liu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"T","family":"Taniguchi","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3701-8119","authenticated-orcid":false,"given":"K","family":"Watanabe","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"J-M","family":"Berroir","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"E","family":"Bocquillon","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"G","family":"F\u00e8ve","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"C","family":"Voisin","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"J","family":"Chazelas","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2408-7393","authenticated-orcid":false,"given":"B","family":"Pla\u00e7ais","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3694-9640","authenticated-orcid":false,"given":"E","family":"Baudin","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2021,5,24]]},"reference":[{"key":"tdmabfe9fbib1","doi-asserted-by":"publisher","first-page":"699","DOI":"10.1038\/nnano.2012.193","article-title":"Electronics and optoelectronics of two-dimensional transition metal dichalcogenides","volume":"7","author":"Wang","year":"2012","journal-title":"Nat. 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Published by IOP Publishing Ltd","name":"copyright_information","label":"Copyright Information"},{"value":"2021-01-12","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2021-05-06","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2021-05-24","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}