{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,20]],"date-time":"2026-10-20T02:38:54Z","timestamp":1792463934342,"version":"4.5.0"},"reference-count":36,"publisher":"IOP Publishing","issue":"3","license":[{"start":{"date-parts":[[2023,4,6]],"date-time":"2023-04-06T00:00:00Z","timestamp":1680739200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/publishingsupport.iopscience.iop.org\/iop-standard\/v1"},{"start":{"date-parts":[[2023,4,6]],"date-time":"2023-04-06T00:00:00Z","timestamp":1680739200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"funder":[{"DOI":"10.13039\/501100001807","name":"FAPESP","doi-asserted-by":"crossref","award":["17\/02317-2"],"award-info":[{"award-number":["17\/02317-2"]}],"id":[{"id":"10.13039\/501100001807","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["2D Mater."],"published-print":{"date-parts":[[2023,7,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n               <jats:p>Transition metal dichalcogenides have been the subject of numerous studies addressing technological applications and fundamental issues. Single-layer PtSe<jats:sub>2<\/jats:sub> is a semiconductor with a trivial bandgap, in contrast, its counterpart with <jats:inline-formula>\n                     <jats:tex-math\/>\n                     <mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" overflow=\"scroll\">\n                        <mml:mn>25<\/mml:mn>\n                        <mml:mi mathvariant=\"normal\">%<\/mml:mi>\n                     <\/mml:math>\n                  \n                  <\/jats:inline-formula> of Se atoms substituted by Hg, Pt<jats:sub>2<\/jats:sub>HgSe<jats:sub>3<\/jats:sub> (jacutingaite, a naturally occurring mineral) is a 2D topological insulator with a large bandgap. Based on <jats:italic>ab-initio<\/jats:italic> calculations, we investigate the energetic stability, and the topological transition in Pt(Hg<jats:sub>\n                     <jats:italic>x<\/jats:italic>\n                  <\/jats:sub>Se<jats:inline-formula>\n                     <jats:tex-math\/>\n                     <mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" overflow=\"scroll\">\n                        <mml:msub>\n                           <mml:mi\/>\n                           <mml:mrow>\n                              <mml:mn>1<\/mml:mn>\n                              <mml:mo>\u2212<\/mml:mo>\n                              <mml:mi>x<\/mml:mi>\n                           <\/mml:mrow>\n                        <\/mml:msub>\n                     <\/mml:math>\n                  \n                  <\/jats:inline-formula>)<jats:sub>2<\/jats:sub> as a function of alloy concentration, and the distribution of Hg atoms embedded in the PtSe<jats:sub>2<\/jats:sub> host. Our findings reveal the dependence of the topological phase with respect to the alloy concentration and robustness with respect to the distribution of Hg. Through a combination of our <jats:italic>ab-initio<\/jats:italic> results and a defect wave function percolation model, we estimate the random alloy concentration threshold for the topological transition to be only <jats:inline-formula>\n                     <jats:tex-math\/>\n                     <mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" overflow=\"scroll\">\n                        <mml:mn>9<\/mml:mn>\n                        <mml:mi mathvariant=\"normal\">%<\/mml:mi>\n                     <\/mml:math>\n                  \n                  <\/jats:inline-formula>. Our results expand the possible search for non-trivial topological phases in random alloy systems.<\/jats:p>","DOI":"10.1088\/2053-1583\/acc670","type":"journal-article","created":{"date-parts":[[2023,3,22]],"date-time":"2023-03-22T18:25:21Z","timestamp":1679509521000},"page":"035001","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":6,"title":["Topological insulating phase arising in transition metal dichalcogenide alloy"],"prefix":"10.1088","volume":"10","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2937-2620","authenticated-orcid":true,"given":"F","family":"Crasto de Lima","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4811-7729","authenticated-orcid":false,"given":"B","family":"Focassio","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1237-1525","authenticated-orcid":true,"given":"R H","family":"Miwa","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5384-7676","authenticated-orcid":false,"given":"A","family":"Fazzio","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2023,4,6]]},"reference":[{"key":"tdmacc670bib1","doi-asserted-by":"publisher","first-page":"35","DOI":"10.1038\/s41586-018-0770-2","type":"journal-article","article-title":"Scalable energy-efficient magnetoelectric spin\u2013orbit logic","volume":"565","author":"Manipatruni","year":"2019","journal-title":"Nature"},{"key":"tdmacc670bib2","doi-asserted-by":"publisher","first-page":"32","DOI":"10.1111\/j.1365-3121.2007.00783.x","type":"journal-article","article-title":"Platinum enrichment at low temperatures and related microstructures, with examples of hongshiite (PtCu) and empirical \u2018Pt2HgSe3\u2019 from Itabira, Minas Gerais, Brazil","volume":"20","author":"Cabral","year":"2008","journal-title":"Terra Nova"},{"key":"tdmacc670bib3","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.120.117701","type":"journal-article","article-title":"Prediction of a large-gap and switchable Kane\u2013Mele quantum spin Hall insulator","volume":"120","author":"Marrazzo","year":"2018","journal-title":"Phys. Rev. Lett."},{"key":"tdmacc670bib4","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.102.235153","type":"journal-article","article-title":"Jacutingaite-family: a class of topological materials","volume":"102","author":"Crasto de Lima","year":"2020","journal-title":"Phys. Rev. B"},{"key":"tdmacc670bib5","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.109.035503","type":"journal-article","article-title":"Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping","volume":"109","author":"Komsa","year":"2012","journal-title":"Phys. Rev. Lett."},{"key":"tdmacc670bib6","doi-asserted-by":"publisher","DOI":"10.1073\/pnas.2106124118","type":"journal-article","article-title":"Designing artificial two-dimensional landscapes via atomic-layer substitution","volume":"118","author":"Guo","year":"2021","journal-title":"Proc. Natl Acad. Sci."},{"key":"tdmacc670bib7","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202106222","type":"journal-article","article-title":"Reaching the excitonic limit in 2D janus monolayers by in situ deterministic growth","volume":"34","author":"Qin","year":"2022","journal-title":"Adv. Mater."},{"key":"tdmacc670bib8","doi-asserted-by":"publisher","first-page":"1861","DOI":"10.1021\/acsami.0c17810","type":"journal-article","article-title":"Doping-free all PtSe2 transistor via thickness-modulated phase transition","volume":"13","author":"Das","year":"2021","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"tdmacc670bib9","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevResearch.2.012063","type":"journal-article","article-title":"Emergent dual topology in the three-dimensional Kane\u2013Mele Pt2HgSe3","volume":"2","author":"Marrazzo","year":"2020","journal-title":"Phys. Rev. Res."},{"key":"tdmacc670bib10","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.96.125102","type":"journal-article","article-title":"Experimental evidence for type-II Dirac semimetal in PtSe2","volume":"96","author":"Zhang","year":"2017","journal-title":"Phys. Rev. B"},{"key":"tdmacc670bib11","doi-asserted-by":"publisher","first-page":"21","DOI":"10.1038\/nmat5031","type":"journal-article","article-title":"Ubiquitous formation of bulk Dirac cones and topological surface states from a single orbital manifold in transition-metal dichalcogenides","volume":"17","author":"Bahramy","year":"2018","journal-title":"Nat. Mater."},{"key":"tdmacc670bib12","doi-asserted-by":"publisher","DOI":"10.1088\/2516-1075\/ab09b7","type":"journal-article","article-title":"A general route to form topologically-protected surface and bulk Dirac fermions along high-symmetry lines","volume":"1","author":"Clark","year":"2019","journal-title":"Electron. Struct."},{"key":"tdmacc670bib13","doi-asserted-by":"publisher","DOI":"10.1088\/2053-1583\/3\/2\/022002","type":"journal-article","article-title":"Defect engineering of two-dimensional transition metal dichalcogenides","volume":"3","author":"Lin","year":"2016","journal-title":"2D Mater."},{"key":"tdmacc670bib14","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.104.214206","type":"journal-article","article-title":"Amorphous structural, electronic and topological nature from first principles","volume":"104","author":"Focassio","year":"2021","journal-title":"Phys. Rev. B"},{"key":"tdmacc670bib15","doi-asserted-by":"publisher","first-page":"2642","DOI":"10.1038\/ncomms3642","type":"journal-article","article-title":"Hopping transport through defect-induced localized states in molybdenum disulphide","volume":"4","author":"Qiu","year":"2013","journal-title":"Nat. Commun."},{"key":"tdmacc670bib16","doi-asserted-by":"publisher","first-page":"9398","DOI":"10.1021\/acs.nanolett.1c02458","type":"journal-article","article-title":"At the verge of topology: vacancy-driven quantum spin Hall in trivial insulators","volume":"21","author":"Crasto de Lima","year":"2021","journal-title":"Nano Lett."},{"key":"tdmacc670bib17","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.90.201403","type":"journal-article","article-title":"Quantum spin Hall and Z2 metallic states in an organic material","volume":"90","author":"Zhao","year":"2014","journal-title":"Phys. Rev. B"},{"key":"tdmacc670bib18","doi-asserted-by":"publisher","first-page":"15","DOI":"10.1016\/0927-0256(96)00008-0","type":"journal-article","article-title":"Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set","volume":"6","author":"Kresse","year":"1996","journal-title":"Comput. Mater. Sci."},{"key":"tdmacc670bib19","doi-asserted-by":"publisher","first-page":"3865","DOI":"10.1103\/PhysRevLett.77.3865","type":"journal-article","article-title":"Generalized gradient approximation made simple","volume":"77","author":"Perdew","year":"1996","journal-title":"Phys. Rev. Lett."},{"key":"tdmacc670bib20","doi-asserted-by":"publisher","first-page":"17953","DOI":"10.1103\/PhysRevB.50.17953","type":"journal-article","article-title":"Projector augmented-wave method","volume":"50","author":"Bl\u00f6chl","year":"1994","journal-title":"Phys. Rev. B"},{"key":"tdmacc670bib21","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.83.235401","type":"journal-article","article-title":"Computing topological invariants without inversion symmetry","volume":"83","author":"Soluyanov","year":"2011","journal-title":"Phys. Rev. B"},{"key":"tdmacc670bib22","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.84.075119","type":"journal-article","article-title":"Equivalent expression of Z2 topological invariant for band insulators using the non-Abelian Berry connection","volume":"84","author":"Rui","year":"2011","journal-title":"Phys. Rev. B"},{"key":"tdmacc670bib23","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.98.125130","type":"journal-article","article-title":"Theory of spin Bott index for quantum spin Hall states in nonperiodic systems","volume":"98","author":"Huang","year":"2018","journal-title":"Phys. Rev. B"},{"key":"tdmacc670bib24","doi-asserted-by":"publisher","first-page":"2309","DOI":"10.1016\/j.cpc.2014.05.003","type":"journal-article","article-title":"An updated version of Wannier90: a tool for obtaining maximally-localised Wannier functions","volume":"185","author":"Mostofi","year":"2014","journal-title":"Comput. Phys. Commun."},{"key":"tdmacc670bib25","doi-asserted-by":"publisher","first-page":"353","DOI":"10.1103\/PhysRevLett.65.353","type":"journal-article","article-title":"Special quasirandom structures","volume":"65","author":"Alex Zunger","year":"1990","journal-title":"Phys. Rev. Lett."},{"key":"tdmacc670bib26","doi-asserted-by":"publisher","first-page":"462","DOI":"10.1016\/j.commatsci.2017.11.034","type":"journal-article","article-title":"PAOFLOW: a utility to construct and operate on ab initio Hamiltonians from the projections of electronic wavefunctions on atomic orbital bases, including characterization of topological materials","volume":"143","author":"Buongiorno Nardelli","year":"2018","journal-title":"Comput. Mater. Sci."},{"key":"tdmacc670bib27","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.96.115128","type":"journal-article","article-title":"Defect-induced large spin-orbit splitting in monolayer PtSe2","volume":"96","author":"Adhib Ulil Absor","year":"2017","journal-title":"Phys. Rev. B"},{"key":"tdmacc670bib28","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.6.084002","type":"journal-article","article-title":"Vacancy localization effects on MX2 transition metal dichalcogenides: a systematic ab-initio study","volume":"6","author":"Freire","year":"2022","journal-title":"Phys. Rev. Mater."},{"key":"tdmacc670bib29","doi-asserted-by":"publisher","first-page":"717","DOI":"10.1038\/nmat4915","type":"journal-article","article-title":"Intrinsically patterned two-dimensional materials for selective adsorption of molecules and nanoclusters","volume":"16","author":"Lin","year":"2017","journal-title":"Nat. Mater."},{"key":"tdmacc670bib30","doi-asserted-by":"publisher","first-page":"3289","DOI":"10.1021\/acs.nanolett.1c04275","type":"journal-article","article-title":"Atomic-level dynamics of point vacancies and the induced stretched defects in 2D monolayer PtSe2","volume":"22","author":"Chen","year":"2022","journal-title":"Nano Lett."},{"key":"tdmacc670bib31","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.95.226801","type":"journal-article","article-title":"Quantum spin Hall effect in graphene","volume":"95","author":"Kane","year":"2005","journal-title":"Phys. Rev. Lett."},{"key":"tdmacc670bib32","doi-asserted-by":"publisher","first-page":"380","DOI":"10.1038\/s41567-017-0024-5","type":"journal-article","article-title":"Amorphous topological insulators constructed from random point sets","volume":"14","author":"Mitchell","year":"2018","journal-title":"Nat. Phys."},{"key":"tdmacc670bib33","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.118.236402","type":"journal-article","article-title":"Topological insulators in amorphous systems","volume":"118","author":"Agarwala","year":"2017","journal-title":"Phys. Rev. Lett."},{"key":"tdmacc670bib34","doi-asserted-by":"publisher","first-page":"8941","DOI":"10.1021\/acs.nanolett.9b03881","type":"journal-article","article-title":"Toward realistic amorphous topological insulators","volume":"19","author":"Costa","year":"2019","journal-title":"Nano Lett."},{"key":"tdmacc670bib35","doi-asserted-by":"publisher","DOI":"10.1088\/0953-8984\/26\/25\/255502","type":"journal-article","article-title":"Stability of Z2 topological order in the presence of vacancy-induced impurity band","volume":"26","author":"Lee","year":"2014","journal-title":"J. Phys.: Condens. Matter"},{"key":"tdmacc670bib36","doi-asserted-by":"publisher","first-page":"275","DOI":"10.1103\/PhysRevE.60.275","type":"journal-article","article-title":"Site percolation thresholds for Archimedean lattices","volume":"60","author":"Suding","year":"1999","journal-title":"Phys. Rev. E"}],"container-title":["2D Materials"],"original-title":[],"link":[{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2053-1583\/acc670","content-type":"text\/html","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2053-1583\/acc670\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2053-1583\/acc670","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2053-1583\/acc670\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2053-1583\/acc670\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2053-1583\/acc670\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2053-1583\/acc670\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"similarity-checking"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2053-1583\/acc670\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T13:26:57Z","timestamp":1760189217000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2053-1583\/acc670"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,4,6]]},"references-count":36,"journal-issue":{"issue":"3","published-online":{"date-parts":[[2023,4,6]]},"published-print":{"date-parts":[[2023,7,1]]}},"URL":"https:\/\/doi.org\/10.1088\/2053-1583\/acc670","relation":{},"ISSN":["2053-1583"],"issn-type":[{"value":"2053-1583","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,4,6]]},"assertion":[{"value":"Topological insulating phase arising in transition metal dichalcogenide alloy","name":"article_title","label":"Article Title"},{"value":"2D Materials","name":"journal_title","label":"Journal Title"},{"value":"paper","name":"article_type","label":"Article Type"},{"value":"\u00a9 2023 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.","name":"copyright_information","label":"Copyright Information"},{"value":"2022-12-12","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2023-03-22","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2023-04-06","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}