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However, finding suitable material candidates has been a significant challenge. Here, we investigate wide bandgap hexagonal aluminum nitride (h-AlN) monolayers, a potential material candidate for efficient UV light source. From first-principle calculations, we investigate impact of electron\u2013phonon interaction (EPI) on single-particle spectrum and temperature-dependent bandgap renormalization of h-AlN monolayer. Additionally, temperature-dependent optical absorption and emission studied from finite-temperature Bethe\u2013Salpeter equation (BSE) show significant impact of EPI. We calculate temperature-dependent non-radiative linewidths using the exciton\u2013phonon coupling function that gives a parameter free exciton lifetimes. We demonstrate that h-AlN monolayers exhibit strong photoluminescence (PL) emission within the UV range of <jats:inline-formula>\n                     <jats:tex-math\/>\n                     <mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" overflow=\"scroll\">\n                        <mml:mrow>\n                           <mml:mn>3.94<\/mml:mn>\n                           <mml:mo>\u2212<\/mml:mo>\n                           <mml:mn>4.05<\/mml:mn>\n                        <\/mml:mrow>\n                     <\/mml:math>\n                  <\/jats:inline-formula> eV. Furthermore, from the finite-momentum exciton spectrum calculation using BSE, we show that the PL emissions in indirect bandgap h-AlN are facilitated by phonon modes with finite lattice momentum. These phonon modes promote efficient recombination of electrons and holes having finite momentum difference (<jats:bold>q<\/jats:bold>). Our findings provide a foundation for developing advanced optoelectronic devices and efficient UV light sources based on h-AlN monolayers.<\/jats:p>","DOI":"10.1088\/2053-1583\/adb8be","type":"journal-article","created":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T09:48:01Z","timestamp":1740131281000},"page":"025022","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":2,"title":["Phonon-assisted photoluminescence and exciton recombination in monolayer aluminum nitride"],"prefix":"10.1088","volume":"12","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-4784-9573","authenticated-orcid":true,"given":"Pushpendra","family":"Yadav","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6399-7264","authenticated-orcid":true,"given":"Amit","family":"Agarwal","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4442-5225","authenticated-orcid":true,"given":"Sitangshu","family":"Bhattacharya","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"266","published-online":{"date-parts":[[2025,3,4]]},"reference":[{"key":"tdmadb8bebib1","doi-asserted-by":"publisher","first-page":"404","DOI":"10.1038\/nmat1134","article-title":"Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal","volume":"3","author":"Watanabe","year":"2004","journal-title":"Nat. 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