{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,10]],"date-time":"2026-10-10T13:43:58Z","timestamp":1791639838745,"version":"4.3.4"},"reference-count":47,"publisher":"IOP Publishing","issue":"2","license":[{"start":{"date-parts":[[2026,5,26]],"date-time":"2026-05-26T00:00:00Z","timestamp":1779753600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,5,26]],"date-time":"2026-05-26T00:00:00Z","timestamp":1779753600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"funder":[{"name":"Austrian Science Fund","award":["10.55776\/COE5"],"award-info":[{"award-number":["10.55776\/COE5"]}]},{"DOI":"10.13039\/501100002347","name":"Bundesministerium f\u00fcr Forschung, Technologie und Raumfahrt","doi-asserted-by":"crossref","award":["05K19PG1"],"award-info":[{"award-number":["05K19PG1"]}],"id":[{"id":"10.13039\/501100002347","id-type":"DOI","asserted-by":"crossref"}]},{"DOI":"10.13039\/501100001659","name":"Deutsche Forschungsgemeinschaft","doi-asserted-by":"crossref","award":["429784087"],"award-info":[{"award-number":["429784087"]}],"id":[{"id":"10.13039\/501100001659","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["2D Mater."],"published-print":{"date-parts":[[2026,6,1]]},"abstract":"Abstract<\/jats:title>\n \n Monolayer MoS\n 2<\/jats:sub>\n combines a direct optical bandgap with an atomically thin geometry, making it a promising platform for defect engineering. Raman studies of ion-irradiated MoS\n 2<\/jats:sub>\n are often complicated by high ion energies, incomplete defect quantification, and uncontrolled adsorbates at defect sites. Here, we irradiate large-area monolayer MoS\n 2<\/jats:sub>\n with low-energy (600\u2009eV) Ar\n +<\/jats:sup>\n ions in a ultrahigh vacuum chamber and perform\n in situ<\/jats:italic>\n Raman spectroscopy over a range of fluences. Atomic-resolution scanning transmission electron microscopy reveals predominantly randomly distributed sulfur vacancies as the dominant defect type. With increasing fluence, Raman spectra show a downshift and broadening of the E\n \n \n \n <\/jats:tex-math>\n \n \n \n \n \n 2<\/mml:mn>\n g<\/mml:mtext>\n <\/mml:mrow>\n 1<\/mml:mn>\n <\/mml:msubsup>\n <\/mml:mrow>\n <\/mml:math>\n <\/jats:inline-formula>\n mode, a slight upshift and broadening of the A\n \n \n \n <\/jats:tex-math>\n \n \n \n \n \n 1<\/mml:mn>\n g<\/mml:mtext>\n <\/mml:mrow>\n <\/mml:msub>\n <\/mml:mrow>\n <\/mml:math>\n <\/jats:inline-formula>\n mode, and the emergence of defect-activated features, including a prominent LA(\n M<\/jats:italic>\n ) mode. A controlled ambient exposure followed by remeasurement separates intrinsic defect signatures from extrinsic doping: an additional A\n \n \n \n <\/jats:tex-math>\n \n \n \n \n \n 1<\/mml:mn>\n g<\/mml:mtext>\n <\/mml:mrow>\n <\/mml:msub>\n <\/mml:mrow>\n <\/mml:math>\n <\/jats:inline-formula>\n upshift and linewidth narrowing indicate a modest, largely reversible p-doping contribution from weak physisorption at vacancy sites, corresponding to an apparent charge transfer of \u223c0.02\n e<\/jats:italic>\n per STEM-counted vacancy. Within the sensitivity of our\n in situ<\/jats:italic>\n Raman measurements, oxidation-related signatures remain negligible, and adsorbate effects largely vanish upon returning to vacuum and under laser illumination. These results establish Raman fingerprints of sulfur-vacancy ensembles in monolayer MoS\n 2<\/jats:sub>\n and provide quantitative guidance for defect engineering and metrology under controlled vacuum conditions.\n <\/jats:p>","DOI":"10.1088\/2053-1583\/ae6b2b","type":"journal-article","created":{"date-parts":[[2026,5,10]],"date-time":"2026-05-10T16:47:50Z","timestamp":1778431670000},"page":"025033","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":2,"title":["In situ<\/i>\n Raman study on sulfur vacancies in monolayer MoS\n 2<\/sub>"],"prefix":"10.1088","volume":"13","author":[{"ORCID":"https:\/\/orcid.org\/0009-0007-6382-3679","authenticated-orcid":true,"given":"Leon","family":"Daniel","sequence":"first","affiliation":[{"name":"University of Duisburg-Essen"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7943-2089","authenticated-orcid":true,"given":"Yossarian","family":"Liebsch","sequence":"additional","affiliation":[{"name":"University of Duisburg-Essen"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-9738-9706","authenticated-orcid":true,"given":"Charleen","family":"Lintz","sequence":"additional","affiliation":[{"name":"University of Duisburg-Essen"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0001-3600-6071","authenticated-orcid":true,"given":"Umair","family":"Javed","sequence":"additional","affiliation":[{"name":"University of Vienna"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8737-6227","authenticated-orcid":true,"given":"Osamah","family":"Kharsah","sequence":"additional","affiliation":[{"name":"University of Duisburg-Essen"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7797-9662","authenticated-orcid":true,"given":"Lars","family":"Breuer","sequence":"additional","affiliation":[{"name":"University of Duisburg-Essen"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1301-5266","authenticated-orcid":true,"given":"Jani","family":"Kotakoski","sequence":"additional","affiliation":[{"name":"University of Vienna"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5785-1186","authenticated-orcid":true,"given":"Marika","family":"Schleberger","sequence":"additional","affiliation":[{"name":"University of Duisburg-Essen"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2026,5,26]]},"reference":[{"key":"tdmae6b2bbib1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.105.136805","type":"journal-article","volume":"105","author":"Mak","year":"2010","journal-title":"Phys. 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Published by IOP Publishing Ltd","name":"copyright_information","label":"Copyright Information"},{"value":"2026-01-07","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2026-05-05","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2026-05-26","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}