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Res. Express"],"published-print":{"date-parts":[[2025,4,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n               <jats:p>We report the perpendicular critical field <jats:italic>H<\/jats:italic>\n                  <jats:sub>\n                     <jats:italic>c<\/jats:italic>2<\/jats:sub> properties of disordered Re-Al bilayers via magneto-transport measurements. The bilayers consisted of a <jats:inline-formula>\n                     <jats:tex-math>\n\n<\/jats:tex-math>\n                     <mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" overflow=\"scroll\">\n                        <mml:msub>\n                           <mml:mrow>\n                              <mml:mi>d<\/mml:mi>\n                           <\/mml:mrow>\n                           <mml:mrow>\n                              <mml:mi mathvariant=\"normal\">Re<\/mml:mi>\n                           <\/mml:mrow>\n                        <\/mml:msub>\n                        <mml:mo>=<\/mml:mo>\n                        <mml:mn>3<\/mml:mn>\n                     <\/mml:math>\n                  <\/jats:inline-formula> nm bottom layer of Re and an upper Al layer with thickness varying between <jats:italic>d<\/jats:italic>\n                  <jats:sub>Al<\/jats:sub>\u00a0=\u00a00\u00a0\u2212\u00a03 nm. We find that in this range of Al thicknesses, the bilayer transition temperature <jats:italic>T<\/jats:italic>\n                  <jats:sub>\n                     <jats:italic>c<\/jats:italic>\n                  <\/jats:sub> increases with increasing Al thickness, although their monolayer counterparts have <jats:inline-formula>\n                     <jats:tex-math>\n\n<\/jats:tex-math>\n                     <mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" overflow=\"scroll\">\n                        <mml:msubsup>\n                           <mml:mrow>\n                              <mml:mi>T<\/mml:mi>\n                           <\/mml:mrow>\n                           <mml:mrow>\n                              <mml:mi>c<\/mml:mi>\n                           <\/mml:mrow>\n                           <mml:mrow>\n                              <mml:mi mathvariant=\"normal\">Re<\/mml:mi>\n                           <\/mml:mrow>\n                        <\/mml:msubsup>\n                        <mml:mo>&gt;<\/mml:mo>\n                        <mml:msubsup>\n                           <mml:mrow>\n                              <mml:mi>T<\/mml:mi>\n                           <\/mml:mrow>\n                           <mml:mrow>\n                              <mml:mi>c<\/mml:mi>\n                           <\/mml:mrow>\n                           <mml:mrow>\n                              <mml:mi mathvariant=\"normal\">Al<\/mml:mi>\n                           <\/mml:mrow>\n                        <\/mml:msubsup>\n                     <\/mml:math>\n                  <\/jats:inline-formula>. Furthermore, <jats:italic>H<\/jats:italic>\n                  <jats:sub>\n                     <jats:italic>c<\/jats:italic>2<\/jats:sub> of the bilayers has a local maximum at an Al coverage of 1.5 nm with a critical field that is 50% larger than that of the standalone 3 nm Re film. At higher Al thicknesses <jats:italic>H<\/jats:italic>\n                  <jats:sub>\n                     <jats:italic>c<\/jats:italic>2<\/jats:sub> drops rapidly but remains more than an order of magnitude greater that that of comparable thickness standalone Al film. Our data show that a thin, disordered Re under-layer can dramatically increase the magnetic field tolerance of the Al over-layer. This would allow one to retain the desirable chemical and metallurgical properties of Al without sacrificing high field compatibility in quantum circuits, such as topological qubit devices and superinductor circuits.<\/jats:p>","DOI":"10.1088\/2053-1591\/adbab6","type":"journal-article","created":{"date-parts":[[2025,2,26]],"date-time":"2025-02-26T22:55:42Z","timestamp":1740610542000},"page":"046001","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":0,"title":["The proximity effect and critical field behavior of Re\/Al bilayers"],"prefix":"10.1088","volume":"12","author":[{"ORCID":"https:\/\/orcid.org\/0009-0008-1039-1507","authenticated-orcid":true,"given":"F N","family":"Womack","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0000-1136-6970","authenticated-orcid":true,"given":"\u00c1 M","family":"Ortega","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S K","family":"Karna","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"D","family":"Graf","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8412-0303","authenticated-orcid":true,"given":"P W","family":"Adams","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"266","published-online":{"date-parts":[[2025,4,11]]},"reference":[{"key":"mrxadbab6bib1","doi-asserted-by":"publisher","first-page":"225","DOI":"10.1103\/RevModPhys.36.225","volume":"3","author":"de Gennes","year":"1964","journal-title":"Rev. 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