{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,1]],"date-time":"2026-05-01T01:09:03Z","timestamp":1777597743295,"version":"3.51.4"},"reference-count":83,"publisher":"IOP Publishing","issue":"3","license":[{"start":{"date-parts":[[2025,6,26]],"date-time":"2025-06-26T00:00:00Z","timestamp":1750896000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2025,6,26]],"date-time":"2025-06-26T00:00:00Z","timestamp":1750896000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"funder":[{"name":"I3N projects financed by national funds through the FCT - Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia.","award":["LA\/P\/0037\/2020"],"award-info":[{"award-number":["LA\/P\/0037\/2020"]}]},{"name":"INAGBE Angola"},{"name":"Project Agenda ILLIANCE, financed by PRR - Plano de Recupera\u00e7\u00e3o e Resili\u00eancia under the Next Generation EU from the European Union","award":["C644919832-00000035 | Project n\u00b0 46"],"award-info":[{"award-number":["C644919832-00000035 | Project n\u00b0 46"]}]},{"name":"CEECIND grant","award":["FCT\/2021.02405.CEECIND"],"award-info":[{"award-number":["FCT\/2021.02405.CEECIND"]}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["J. Phys. Energy"],"published-print":{"date-parts":[[2025,7,31]]},"abstract":"Abstract<\/jats:title>\n The resilience of chalcogenide-based solar cells (SCs) in the space environment is crucial for their application in satellite power systems. In this experimental study, we investigate the effects of 1\u2009MeV proton irradiation at fluences ranging from \n \n \n \n 3<\/mml:mn>\n \n \u00d7<\/mml:mo>\n \n \n 10<\/mml:mn>\n \n 10<\/mml:mn>\n <\/mml:mrow>\n <\/mml:msup>\n <\/mml:mrow>\n <\/mml:math>\n <\/jats:inline-formula> to 1014<\/jats:sup>\u2009H\n \n \n \n \n \n +<\/mml:mtext>\n <\/mml:msup>\n <\/mml:mrow>\n <\/mml:math>\n <\/jats:inline-formula>\u2009cm\u22122<\/jats:sup> on the optoelectronic properties of Cu(In,Ga)Se2<\/jats:sub> (CIGS) based SCs. In situ<\/jats:italic> and ex situ<\/jats:italic> electrical characterization revealed that irradiation causes degradation of the diode parameters and the electrical performance of the device, in particular the open-circuit voltage (\n \n \n \n \n V<\/mml:mi>\n OC<\/mml:mtext>\n <\/mml:msub>\n <\/mml:mrow>\n <\/mml:math>\n <\/jats:inline-formula>), fill factor and power conversion efficiency (\u03b7<\/jats:italic>). Fluences above 1013<\/jats:sup>\u2009H\n \n \n \n \n \n +<\/mml:mtext>\n <\/mml:msup>\n <\/mml:mrow>\n <\/mml:math>\n <\/jats:inline-formula>\u2009cm\u22122<\/jats:sup> caused significant degradation of the SCs. Keeping the SCs at room temperature, ambient atmosphere and in the dark did not contribute significantly to the SC recovery. The photoluminescence (PL) analysis revealed an increase in the defect density leading to the formation of deeper radiative recombination channels, as well as non-radiative ones, and an increase on the magnitude of the fluctuating potentials. In order to revert this degradation, we explored a heat-light soaking (HLS) treatment that consisted in exposing the SCs to light incidence at a temperature slightly above 90\u2009\n \n \n \n \n \n \u00b0<\/mml:mo>\n <\/mml:msup>\n <\/mml:mrow>\n <\/mml:math>\n <\/jats:inline-formula>C. This treatment significantly restored the device\u2019s electrical performance and the luminescence properties, demonstrating partial defect annihilation and restoration of the CIGS electronic structure. Interestingly, a non-irradiated SC subjected to the same HLS treatment showed no significant beneficial effect on the performance of the SC, which confirms the link between the observed recovery of the irradiated SCs and the annihilation of irradiation-induced defects. The findings of this work suggest that HLS is an effective, space-compatible self-healing mechanism that mitigates radiation damage in CIGS SCs, potentially enabling satellite SCs to be designed without cover glass.<\/jats:p>","DOI":"10.1088\/2515-7655\/ade5c9","type":"journal-article","created":{"date-parts":[[2025,6,18]],"date-time":"2025-06-18T22:49:16Z","timestamp":1750286956000},"page":"035021","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":3,"title":["Evaluating 1\u2009MeV proton damage in Cu(In,Ga)Se2<\/sub> solar cells and a recovery pathway"],"prefix":"10.1088","volume":"7","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-0192-3056","authenticated-orcid":true,"given":"Tiago V","family":"Fernandes","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-2041-6382","authenticated-orcid":true,"given":"Jo\u00e3o","family":"Gomes","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jo\u00e3o","family":"Gaspar","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2724-1691","authenticated-orcid":true,"given":"Pedro T","family":"Patr\u00edcio","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4536-5954","authenticated-orcid":false,"given":"Bruno P","family":"Falc\u00e3o","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1890-1133","authenticated-orcid":true,"given":"Ant\u00f3nio F","family":"da Cunha","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3879-1533","authenticated-orcid":true,"given":"Norberto","family":"Catarino","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3724-5664","authenticated-orcid":true,"given":"Jos\u00e9 G","family":"Marques","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6774-8492","authenticated-orcid":true,"given":"Marco","family":"Peres","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5546-6922","authenticated-orcid":true,"given":"Katharina","family":"Lorenz","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3155-6832","authenticated-orcid":false,"given":"Jennifer P","family":"Teixeira","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1050-2958","authenticated-orcid":false,"given":"Pedro M P","family":"Salom\u00e9","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8131-3313","authenticated-orcid":true,"given":"Joaquim P","family":"Leit\u00e3o","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"266","published-online":{"date-parts":[[2025,6,26]]},"reference":[{"key":"jpenergyade5c9bib1","author":"","year":"2012"},{"key":"jpenergyade5c9bib2","first-page":"pp 1757","article-title":"Advanced III-V multijunction cells for space","volume":"vol 2","author":"King","year":"2006"},{"key":"jpenergyade5c9bib3","doi-asserted-by":"publisher","DOI":"10.3389\/fphy.2020.631925","article-title":"A brief review of high efficiency III-V solar cells for space application","volume":"8","author":"Li","year":"2021","journal-title":"Front. Phys."},{"key":"jpenergyade5c9bib4","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.202300709","article-title":"Designing of lightweight and ultrathin III-V\/Ge solar cells for flexible space and terrestrial photovoltaic blankets","volume":"221","author":"Pakhanov","year":"2024","journal-title":"Phys. Status Solidi A"},{"key":"jpenergyade5c9bib5","first-page":"pp 439","author":"Philipps","year":"2018","edition":"3rd edn"},{"key":"jpenergyade5c9bib6","doi-asserted-by":"publisher","first-page":"326","DOI":"10.1038\/s41560-018-0125-0","article-title":"III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration","volume":"3","author":"Cariou","year":"2018","journal-title":"Nat. Energy"},{"key":"jpenergyade5c9bib7","first-page":"pp 3506","article-title":"IMM triple-junction solar cells and modules optimized for space and terrestrial conditions","author":"Takamoto","year":"2017"},{"key":"jpenergyade5c9bib8","doi-asserted-by":"publisher","first-page":"161","DOI":"10.1002\/pip.2840","article-title":"Radiation degradation characteristics of component subcells in inverted metamorphic triple-junction solar cells irradiated with electrons and protons","volume":"25","author":"Imaizumi","year":"2017","journal-title":"Prog. Photovolt., Res. Appl."},{"key":"jpenergyade5c9bib9","doi-asserted-by":"publisher","DOI":"10.1002\/aenm.202200125","volume":"12","author":"Verduci","year":"2022","journal-title":"Adv. Energy Mater."},{"key":"jpenergyade5c9bib10","doi-asserted-by":"publisher","first-page":"425","DOI":"10.1002\/pip.3831","article-title":"Solar energy in space applications: review and technology perspectives","volume":"32","author":"Green","year":"2024","journal-title":"Prog. Photovolt., Res. Appl."},{"key":"jpenergyade5c9bib11","doi-asserted-by":"publisher","first-page":"467","DOI":"10.1038\/s41560-024-01472-3","article-title":"High-concentration silver alloying and steep back-contact gallium grading enabling copper indium gallium selenide solar cell with 23.6% efficiency","volume":"9","author":"Keller","year":"2024","journal-title":"Nat. Energy"},{"key":"jpenergyade5c9bib12","doi-asserted-by":"publisher","first-page":"175","DOI":"10.1016\/S0927-0248(02)00320-3","article-title":"Space solar cells\u2013tradeoff analysis","volume":"77","author":"Reddy","year":"2003","journal-title":"Sol. Energy Mater. Sol. Cells"},{"key":"jpenergyade5c9bib13","author":"Luque","year":"2011"},{"key":"jpenergyade5c9bib14","doi-asserted-by":"publisher","first-page":"613","DOI":"10.1016\/j.tsf.2005.11.068","article-title":"Flexible Cu(In,Ga)Se2 thin-film solar cells for space application","volume":"511\u2013512","author":"Otte","year":"2006","journal-title":"Thin Solid Films"},{"key":"jpenergyade5c9bib15","doi-asserted-by":"publisher","first-page":"16385","DOI":"10.1007\/s10853-023-09033-x","article-title":"Cu(In,Ga)Se2-based solar cells for space applications: proton irradiation and annealing recovery","volume":"58","author":"Candeias","year":"2023","journal-title":"J. Mater. Sci."},{"key":"jpenergyade5c9bib16","doi-asserted-by":"publisher","first-page":"650","DOI":"10.1063\/1.1379348","article-title":"Defect generation in Cu(In,Ga)Se2 heterojunction solar cells by high-energy electron and proton irradiation","volume":"90","author":"Jasenek","year":"2001","journal-title":"J. Appl. Phys."},{"key":"jpenergyade5c9bib17","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2021.139023","article-title":"Long term stability and recovery of 3 MeV proton irradiated Cu(In,Ga)Se2 and Cu2(Zn,Sn)(S,Se)4 thin film solar cells","volume":"741","author":"Pearson","year":"2022","journal-title":"Thin Solid Films"},{"key":"jpenergyade5c9bib18","doi-asserted-by":"publisher","first-page":"353","DOI":"10.1016\/j.tsf.2012.11.041","article-title":"Influence of electrical performance on Cu-related defects generated by 250 keV electron irradiation in Cu(In,Ga)Se2 thin-film solar cells","volume":"535","author":"Kawakita","year":"2013","journal-title":"Thin Solid Films"},{"key":"jpenergyade5c9bib19","doi-asserted-by":"publisher","first-page":"1423","DOI":"10.1109\/5.90113","article-title":"The space radiation environment for electronics","volume":"76","author":"Stassinopoulos","year":"1988","journal-title":"Proc. IEEE"},{"key":"jpenergyade5c9bib20","doi-asserted-by":"publisher","first-page":"466","DOI":"10.1109\/TNS.2003.813131","article-title":"Space, atmospheric and terrestrial radiation environments","volume":"50","author":"Barth","year":"2003","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"jpenergyade5c9bib21","author":"Johnston","year":"2010"},{"key":"jpenergyade5c9bib22","author":"Tada","year":"1977"},{"key":"jpenergyade5c9bib23","doi-asserted-by":"publisher","first-page":"696","DOI":"10.1038\/s41467-024-44876-MBurgelman-PPRA5p121","article-title":"Unraveling radiation damage and healing mechanisms in halide perovskites using energy-tuned dual irradiation dosing","volume":"15","author":"Kirmani","year":"2024","journal-title":"Nat. Commun."},{"key":"jpenergyade5c9bib24","first-page":"pp 693","article-title":"Super radiation tolerance of CIGS solar cells demonstrated in space by MDS-1","volume":"vol 1","author":"Kawakita","year":"2003"},{"key":"jpenergyade5c9bib25","first-page":"pp 642","article-title":"Radiation effects in space on solar cells developed for terrestrial use demonstrated by MDS-1","volume":"vol 1","author":"Matsuda","year":"2003"},{"key":"jpenergyade5c9bib26","doi-asserted-by":"publisher","first-page":"93","DOI":"10.1002\/pip.601","article-title":"Results of flight demonstration of terrestrial solar cells in space","volume":"13","author":"Imaizumi","year":"2005","journal-title":"Prog. Photovolt., Res. Appl."},{"key":"jpenergyade5c9bib27","doi-asserted-by":"publisher","first-page":"4849","DOI":"10.1021\/jp993143k","article-title":"Stability issues of Cu(In,Ga)Se2-based solar cells","volume":"104","author":"Guillemoles","year":"2000","journal-title":"J. Phys. Chem. B"},{"key":"jpenergyade5c9bib28","doi-asserted-by":"publisher","DOI":"10.35848\/1347-4065\/acc53b","article-title":"Annealing effects on Cu(In,Ga)Se2 solar cells irradiated by high-fluence proton beam","volume":"62","author":"Nishinaga","year":"2023","journal-title":"Jpn. J. Appl. Phys."},{"key":"jpenergyade5c9bib29","doi-asserted-by":"publisher","first-page":"L670","DOI":"10.1143\/JJAP.46.L670","article-title":"Analysis of anomalous degradation of Cu(In,Ga)Se2 thin-film solar cells irradiated with protons","volume":"46","author":"Kawakita","year":"2007","journal-title":"Jpn. J. Appl. Phys."},{"key":"jpenergyade5c9bib30","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.51.111802","article-title":"Effects of proton irradiation on optical and electrical properties of Cu(In,Ga)Se2 solar cells","volume":"51","author":"Hirose","year":"2012","journal-title":"Jpn. J. Appl. Phys."},{"key":"jpenergyade5c9bib31","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.201900519","article-title":"Proton irradiation on cesium-fluoride-free and cesium-fluoride-treated Cu(In,Ga)Se2 solar cells and annealing effects under illumination","volume":"13","author":"Khatri","year":"2019","journal-title":"Phys. Status Solidi (RRL)\u2013Rapid Res. Lett."},{"key":"jpenergyade5c9bib32","doi-asserted-by":"publisher","first-page":"7536","DOI":"10.1039\/D3TA06998B","article-title":"Radiation resistant chalcopyrite CIGS solar cells: proton damage shielding with Cs treatment and defect healing via heat-light soaking","volume":"12","author":"Lin","year":"2024","journal-title":"J. Mater. Chem. A"},{"key":"jpenergyade5c9bib33","doi-asserted-by":"publisher","first-page":"585","DOI":"10.1103\/PhysRev.92.585","article-title":"Annealing of bombardment damage in a diamond-type lattice: theoretical","volume":"92","author":"Fletcher","year":"1953","journal-title":"Phys. Rev."},{"key":"jpenergyade5c9bib34","doi-asserted-by":"publisher","first-page":"14","DOI":"10.1557\/S088376940003298X","article-title":"Radiation damage in metallic materials","volume":"22","author":"Ullmaier","year":"1997","journal-title":"MRS Bull."},{"key":"jpenergyade5c9bib35","doi-asserted-by":"publisher","first-page":"1165","DOI":"10.1016\/0022-3697(95)00050-X","article-title":"Electronic effects of ion mobility in semiconductors: semionic behaviour of CuInSe2","volume":"56","author":"Chernyak","year":"1995","journal-title":"J. Phys. Chem. Solids"},{"key":"jpenergyade5c9bib36","doi-asserted-by":"publisher","first-page":"227","DOI":"10.1016\/S0927-0248(97)00199-2","article-title":"Prospects of wide-gap chalcopyrites for thin film photovoltaic modules","volume":"49","author":"Herberholz","year":"1997","journal-title":"Sol. Energy Mater. Sol. Cells"},{"key":"jpenergyade5c9bib37","doi-asserted-by":"publisher","first-page":"195","DOI":"10.1016\/j.solmat.2003.06.006","article-title":"Reversible changes of the fill factor in the ZnO\/CdS\/Cu(In,Ga)Se2 solar cells","volume":"80","author":"Igalson","year":"2003","journal-title":"Sol. Energy Mater. Sol. Cells"},{"key":"jpenergyade5c9bib38","doi-asserted-by":"publisher","first-page":"223","DOI":"10.1063\/1.121762","article-title":"Persistent photoconductivity in Cu(In,Ga)Se2 heterojunctions and thin films prepared by sequential deposition","volume":"73","author":"Rau","year":"1998","journal-title":"Appl. Phys. Lett."},{"key":"jpenergyade5c9bib39","doi-asserted-by":"publisher","first-page":"121","DOI":"10.1002\/(SICI)1099-159X(199703\/04)5:2<121::AID-PIP159>3.0.CO;2-4","article-title":"Defects in Cu(In,Ga)Se2 semiconductors and their role in the device performance of thin-film solar cells","volume":"5","author":"Burgelman","year":"1997","journal-title":"Prog. Photovolt., Res. Appl."},{"key":"jpenergyade5c9bib40","doi-asserted-by":"publisher","DOI":"10.1063\/1.3213339","article-title":"Creation and relaxation of light- and bias-induced metastabilities in Cu(In,Ga)Se2","volume":"106","author":"Urbaniak","year":"2009","journal-title":"J. Appl. Phys."},{"key":"jpenergyade5c9bib41","doi-asserted-by":"publisher","first-page":"113725","DOI":"10.1063\/1.2388256","article-title":"Light- and bias-induced metastabilities in Cu(In,Ga)Se2 based solar cells caused by the (V Se-V Cu) vacancy complex","volume":"100","author":"Lany","year":"2006","journal-title":"J. Appl. Phys."},{"key":"jpenergyade5c9bib42","doi-asserted-by":"publisher","first-page":"131","DOI":"10.1051\/epjap:1999162","article-title":"Phase segregation, Cu migration and junction formation in Cu(In,Ga)Se2","volume":"6","author":"Herberholz","year":"1999","journal-title":"Eur. Phys. J. AP"},{"key":"jpenergyade5c9bib43","doi-asserted-by":"publisher","first-page":"2922","DOI":"10.1063\/1.1415345","article-title":"Defect annealing in Cu(In,Ga)Se2 heterojunction solar cells after high-energy electron irradiation","volume":"79","author":"Jasenek","year":"2001","journal-title":"Appl. Phys. Lett."},{"key":"jpenergyade5c9bib44","doi-asserted-by":"publisher","first-page":"L797","DOI":"10.1143\/JJAP.41.L797","article-title":"Annealing enhancement effect by light illumination on proton irradiated Cu(In,Ga)Se2 thin-film solar cells","volume":"41","author":"Kawakita","year":"2002","journal-title":"Jpn. J. Appl. Phys."},{"key":"jpenergyade5c9bib45","doi-asserted-by":"publisher","first-page":"2767","DOI":"10.1021\/acsaem.4c02703","article-title":"Remarkable recovery of proton-irradiated Cu(In,Ga)Se2-Based solar cells for space applications: thermal and light annealing treatment","volume":"8","author":"Fernandes","year":"2025","journal-title":"ACS Appl. Energy Mater."},{"key":"jpenergyade5c9bib46","doi-asserted-by":"publisher","DOI":"10.1002\/solr.202300756","article-title":"Probing the interfacial properties of ACIGS solar cells with targeted proton irradiation","volume":"8","author":"Chacon","year":"2024","journal-title":"Solar RRL"},{"key":"jpenergyade5c9bib47","article-title":"AP-8 trapped proton environment for solar maximum and solar minimum Tech. Rep. NSSDC\/WDC-A-R\/S-76-06","author":"Sawyer","year":"1976"},{"key":"jpenergyade5c9bib48","doi-asserted-by":"publisher","DOI":"10.1016\/j.solmat.2020.110571","article-title":"The role of metastability and concentration on the performance of CIGS solar cells under Low-Intensity-Low-Temperature conditions","volume":"212","author":"Afshari","year":"2020","journal-title":"Sol. Energy Mater. Sol. Cells"},{"key":"jpenergyade5c9bib49","doi-asserted-by":"publisher","first-page":"470","DOI":"10.1002\/pip.2453","article-title":"A comparison between thin film solar cells made from co-evaporated CuIn1-xGaxSe2 using a one-stage process versus a three-stage process","volume":"23","author":"Salom\u00e9","year":"2015","journal-title":"Prog. Photovolt., Res. Appl."},{"key":"jpenergyade5c9bib50","doi-asserted-by":"publisher","first-page":"12295","DOI":"10.1021\/acs.jpcc.0c02622","article-title":"Recombination channels in Cu(In,Ga)Se2 Thin Films: impact of the Ga-Profile","volume":"124","author":"Teixeira","year":"2020","journal-title":"J. Phys. Chem. C"},{"key":"jpenergyade5c9bib51","doi-asserted-by":"publisher","first-page":"684","DOI":"10.1140\/epjp\/s13360-021-01629-z","article-title":"An insider view of the Portuguese ion beam laboratory","volume":"136","author":"Alves","year":"2021","journal-title":"Eur. Phys. J. Plus"},{"key":"jpenergyade5c9bib52","author":"Ziegler","year":"1985"},{"key":"jpenergyade5c9bib53","doi-asserted-by":"publisher","first-page":"362","DOI":"10.1016\/j.nimb.2012.11.060","article-title":"Displacement damage dose approach to predict performance degradation of on-orbit GaInP\/GaAs\/Ge solar cells","volume":"307","author":"Lu","year":"2013","journal-title":"Nucl. Instrum. Methods Phys. Res. B"},{"key":"jpenergyade5c9bib54","doi-asserted-by":"publisher","first-page":"1740","DOI":"10.1109\/TNS.2013.2261316","article-title":"Displacement damage effects in irradiated semiconductor devices","volume":"60","author":"Srour","year":"2013","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"jpenergyade5c9bib55","doi-asserted-by":"publisher","first-page":"103","DOI":"10.1002\/pip.357","article-title":"Modeling solar cell degradation in space: a comparison of the NRL displacement damage dose and the JPL equivalent fluence approaches","volume":"9","author":"Messenger","year":"2001","journal-title":"Prog. Photovolt., Res. Appl."},{"key":"jpenergyade5c9bib56","doi-asserted-by":"publisher","first-page":"5765","DOI":"10.1063\/1.363631","article-title":"The metastable changes of the trap spectra of CuInSe2 based photovoltaic devices","volume":"80","author":"Igalson","year":"1996","journal-title":"J. Appl. 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Appl."},{"key":"jpenergyade5c9bib61","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.11.044005","article-title":"Identifying dominant recombination mechanisms in perovskite solar cells by measuring the transient ideality factor","volume":"11","author":"Calado","year":"2019","journal-title":"Phys. Rev. Appl."},{"key":"jpenergyade5c9bib62","first-page":"pp 1718","article-title":"Anomalous dark current ideality factor (n >2) in thin-film solar cells","author":"Sozzi","year":"2014"},{"key":"jpenergyade5c9bib63","article-title":"Numerical analysis of the effect of grain size and defects on the performance of CIGS solar cells","author":"Sozzi","year":"2010"},{"key":"jpenergyade5c9bib64","first-page":"507","volume":"79","author":"Saad","year":"2003","journal-title":"Sol. Energy Mater. Sol. Cells"},{"key":"jpenergyade5c9bib65","first-page":"pp 879","article-title":"Interpretation of the commonly observed I-V characteristics of c-Si cells having ideality factor larger than two","volume":"vol 1","author":"Breitenstein","year":"2006"},{"key":"jpenergyade5c9bib66","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.83.115209","article-title":"Recombination via tail states in polythiophene: fullerene solar cells","volume":"83","author":"Kirchartz","year":"2011","journal-title":"Phys. Rev. B"},{"key":"jpenergyade5c9bib67","first-page":"399","article-title":"Efficiency limitations of polycrystalline thin film solar cells: case of Cu(In,Ga)Se2","volume":"480\u2013481","author":"Werner","year":"2005","journal-title":"Thin Solid Films"},{"key":"jpenergyade5c9bib68","doi-asserted-by":"publisher","first-page":"425","DOI":"10.1016\/S0927-0248(02)00486-5","article-title":"Thin film silicon solar cells for space applications: study of proton irradiation and thermal annealing effects on the characteristics of solar cells and individual layers","volume":"79","author":"Kuendig","year":"2003","journal-title":"Sol. Energy Mater. Sol. Cells"},{"key":"jpenergyade5c9bib69","doi-asserted-by":"publisher","DOI":"10.1016\/j.solmat.2021.110971","article-title":"Proton irradiation induced GaAs solar cell performance degradation simulations using a physics-based model","volume":"223","author":"Gruginskie","year":"2021","journal-title":"Sol. Energy Mater. Sol. Cells"},{"key":"jpenergyade5c9bib70","first-page":"pp 1038","article-title":"Proton-irradiation of Cu(In,Ga)Se2 and CuInS2 thin-film solar cells","author":"Boden","year":"2000"},{"key":"jpenergyade5c9bib71","article-title":"Datasheets: CuInSe 2: 04-007-4441; CuGaSe2: 04-005-2518; Mo: 04-001-2734, ZnO: 00-036-1451, Al: 00-004-0787","author":"International Centre of Diffraction Data (ICDD)"},{"key":"jpenergyade5c9bib72","doi-asserted-by":"publisher","DOI":"10.1002\/solr.201700199","article-title":"Inhomogeneities in Cu(In,Ga)Se2 thin films for solar cells: band-gap versus potential fluctuations","volume":"2","author":"Abou-Ras","year":"2018","journal-title":"Solar RRL"},{"key":"jpenergyade5c9bib73","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.11.054013","article-title":"Evidence of limiting effects of fluctuating potentials on VOCofCu(InGa)Se2 thin-film solar cells","volume":"11","author":"Teixeira","year":"2019","journal-title":"Phys. Rev. Appl."},{"key":"jpenergyade5c9bib74","doi-asserted-by":"publisher","first-page":"5043","DOI":"10.1063\/1.323631","article-title":"Excitation dependent emission in Mg , Be, Cd and Zn implanted GaAs","volume":"48","author":"Yu","year":"1977","journal-title":"J. Appl. Phys."},{"key":"jpenergyade5c9bib75","doi-asserted-by":"publisher","DOI":"10.1063\/1.4899057","article-title":"Comparison of fluctuating potentials and donor-acceptor pair transitions in a Cu-poor Cu2ZnSnS4 based solar cell","volume":"105","author":"Teixeira","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"jpenergyade5c9bib75","doi-asserted-by":"publisher","DOI":"10.1063\/1.4927663","volume":"107","author":"Teixeira","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"jpenergyade5c9bib76","doi-asserted-by":"publisher","DOI":"10.1063\/1.2180429","article-title":"Photoluminescence study of potential fluctuations in thin layers of Cu(In0.75Ga0.25)(SySe 1\u2212y)2","volume":"99","author":"Schumacher","year":"2006","journal-title":"J. Appl. Phys."},{"key":"jpenergyade5c9bib77","doi-asserted-by":"publisher","first-page":"8989","DOI":"10.1103\/PhysRevB.45.8989","article-title":"Excitation-power dependence of the near-band-edge photoluminescence of semiconductors","volume":"45","author":"Schmidt","year":"1992","journal-title":"Phys. Rev. B"},{"key":"jpenergyade5c9bib78","doi-asserted-by":"publisher","first-page":"3697","DOI":"10.1039\/C7NR08395E","article-title":"Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure","volume":"10","author":"Ben Sedrine","year":"2018","journal-title":"Nanoscale"},{"key":"jpenergyade5c9bib79","doi-asserted-by":"publisher","DOI":"10.1016\/j.apmt.2021.101071","article-title":"Recombination of photo-generated charge carriers in H-terminated and (photo-)oxidized silicon nanoparticles","volume":"23","author":"Falc\u00e3o","year":"2021","journal-title":"Appl. Mater. Today"},{"key":"jpenergyade5c9bib80","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.95.155202","article-title":"Luminescence properties of Cu 2 ZnSn(S,Se) 4 solar cell absorbers: state filling versus screening of electrostatic potential fluctuations","volume":"95","author":"Lang","year":"2017","journal-title":"Phys. Rev. B"},{"key":"jpenergyade5c9bib81","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.84.024120","article-title":"Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films","volume":"84","author":"Leit\u00e3o","year":"2011","journal-title":"Phys. Rev. B"},{"key":"jpenergyade5c9bib82","doi-asserted-by":"publisher","first-page":"4282","DOI":"10.1007\/s11664-018-6193-x","article-title":"Potential fluctuations and localization effects in CZTS single crystals, as revealed by optical spectroscopy","volume":"47","author":"Bleuse","year":"2018","journal-title":"J. Electron. Mater."}],"container-title":["Journal of Physics: Energy"],"original-title":[],"link":[{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2515-7655\/ade5c9","content-type":"text\/html","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2515-7655\/ade5c9\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2515-7655\/ade5c9","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2515-7655\/ade5c9\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2515-7655\/ade5c9\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2515-7655\/ade5c9\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2515-7655\/ade5c9\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"similarity-checking"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2515-7655\/ade5c9\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,26]],"date-time":"2025-06-26T13:32:42Z","timestamp":1750944762000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2515-7655\/ade5c9"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,6,26]]},"references-count":83,"journal-issue":{"issue":"3","published-online":{"date-parts":[[2025,6,26]]},"published-print":{"date-parts":[[2025,7,31]]}},"URL":"https:\/\/doi.org\/10.1088\/2515-7655\/ade5c9","relation":{},"ISSN":["2515-7655"],"issn-type":[{"value":"2515-7655","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025,6,26]]},"assertion":[{"value":"Evaluating 1\u2009MeV proton damage in Cu(In,Ga)Se2 solar cells and a recovery pathway","name":"article_title","label":"Article Title"},{"value":"Journal of Physics: Energy","name":"journal_title","label":"Journal Title"},{"value":"paper","name":"article_type","label":"Article Type"},{"value":"\u00a9 2025 The Author(s). Published by IOP Publishing Ltd","name":"copyright_information","label":"Copyright Information"},{"value":"2025-02-28","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2025-06-18","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2025-06-26","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}