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Comput. Eng."],"published-print":{"date-parts":[[2022,6,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n               <jats:p>Two-terminal ferroelectric synaptic weights are fabricated on silicon. The active layers consist of a 2\u00a0nm thick WO<jats:sub>\n                     <jats:italic>x<\/jats:italic>\n                  <\/jats:sub> film and a 2.7\u00a0nm thick HfZrO<jats:sub>4<\/jats:sub> (HZO) film grown by atomic layer deposition. The ultra-thin HZO layer is crystallized in the ferroelectric phase using a millisecond flash at a temperature of only 500 \u00b0C, evidenced by x-rays diffraction and electron microscopy. The current density is increased by four orders of magnitude compared to weights based on a 5\u00a0nm thick HZO film. Potentiation and depression (analog resistive switching) is demonstrated using either pulses of constant duration (as short as 20 nanoseconds) and increasing amplitude, or pulses of constant amplitude (+\/\u22121\u00a0V) and increasing duration. The cycle-to-cycle variation is below 1%. Temperature dependent electrical characterisation is performed on a series of device cycled up to 10<jats:sup>8<\/jats:sup> times: they reveal that HZO possess semiconducting properties. The fatigue leads to a decrease, in the high resistive state only, of the conductivity and of the activation energy.<\/jats:p>","DOI":"10.1088\/2634-4386\/ac5b2d","type":"journal-article","created":{"date-parts":[[2022,3,7]],"date-time":"2022-03-07T22:17:16Z","timestamp":1646691436000},"page":"024001","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":20,"title":["Effect of cycling on ultra-thin HfZrO<sub>4<\/sub>, ferroelectric synaptic weights"],"prefix":"10.1088","volume":"2","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-2520-3317","authenticated-orcid":true,"given":"Laura","family":"B\u00e9gon-Lours","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8468-9105","authenticated-orcid":true,"given":"Mattia","family":"Halter","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Marilyne","family":"Sousa","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Youri","family":"Popoff","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Diana","family":"D\u00e1vila Pineda","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Donato Francesco","family":"Falcone","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhenming","family":"Yu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Steffen","family":"Reidt","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lorenzo","family":"Benatti","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6178-2614","authenticated-orcid":true,"given":"Francesco Maria","family":"Puglisi","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6082-0068","authenticated-orcid":false,"given":"Bert Jan","family":"Offrein","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"266","published-online":{"date-parts":[[2022,3,25]]},"reference":[{"key":"nceac5b2dbib1","doi-asserted-by":"publisher","first-page":"529","DOI":"10.1038\/s41565-020-0655-z","article-title":"Memory devices and applications for in-memory computing","volume":"15","author":"Sebastian","year":"2020","journal-title":"Nat. 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