{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,23]],"date-time":"2026-01-23T23:17:03Z","timestamp":1769210223155,"version":"3.49.0"},"reference-count":28,"publisher":"IOP Publishing","issue":"4","license":[{"start":{"date-parts":[[2022,11,28]],"date-time":"2022-11-28T00:00:00Z","timestamp":1669593600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0"},{"start":{"date-parts":[[2022,11,28]],"date-time":"2022-11-28T00:00:00Z","timestamp":1669593600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"funder":[{"name":"Open Project of State Key Laboratory of Information Functional Materials","award":["SKL2022"],"award-info":[{"award-number":["SKL2022"]}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"crossref","award":["61634008"],"award-info":[{"award-number":["61634008"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"crossref"}]},{"DOI":"10.13039\/501100013314","name":"111 Project","doi-asserted-by":"crossref","award":["B14040"],"award-info":[{"award-number":["B14040"]}],"id":[{"id":"10.13039\/501100013314","id-type":"DOI","asserted-by":"crossref"}]},{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"crossref","award":["xjj2018016"],"award-info":[{"award-number":["xjj2018016"]}],"id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"crossref"}]},{"name":"Program of Shaanxi Province of China","award":["2020GY-271"],"award-info":[{"award-number":["2020GY-271"]}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["Neuromorph. Comput. Eng."],"published-print":{"date-parts":[[2022,12,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n               <jats:p>Neuromorphic computing requires highly reliable and low power consumption electronic synapses. Complementary-metal-oxide-semiconductor (CMOS) compatible HfO<jats:sub>2<\/jats:sub> based memristors are a strong candidate despite of challenges like non-optimized material engineering and device structures. We report here CMOS integrated 1-transistor-1-resistor (1T1R) electronic synapses with ultrathin HfO<jats:sub>2<\/jats:sub>\/Al<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> bilayer stacks (&lt;5.5 nm) with high-performances. The layer thicknesses were optimized using statistically extensive electrical studies and the optimized HfO<jats:sub>2<\/jats:sub>(3 nm)\/ Al<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub>(1.5 nm) sample shows the high reliability of 600 DC cycles, the low Set voltage of \u223c0.15 V and the low operation current of \u223c6 <jats:italic>\u00b5<\/jats:italic>A. Electron transport mechanisms under cycling operation of single-layer HfO<jats:sub>2<\/jats:sub> and bilayer HfO<jats:sub>2<\/jats:sub>\/Al<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> samples were compared, and it turned out that the inserted thin Al<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> layer results in stable ionic conduction. Compared to the single layer HfO<jats:sub>2<\/jats:sub> stack with almost the same thickness, the superiorities of HfO<jats:sub>2<\/jats:sub>\/Al<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> 1T1R resistive random access memory (RRAM) devices in electronic synapse were thoroughly clarified, such as better DC analog switching and continuous conductance distribution in a larger regulated range (0\u2013700 <jats:italic>\u00b5<\/jats:italic>S). Using the proposed bilayer HfO<jats:sub>2<\/jats:sub>\/Al<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> devices, a recognition accuracy of 95.6% of MNIST dataset was achieved. These results highlight the promising role of the ultrathin HfO<jats:sub>2<\/jats:sub>\/Al<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> bilayer RRAM devices in the application of high-performance neuromorphic computing.<\/jats:p>","DOI":"10.1088\/2634-4386\/aca179","type":"journal-article","created":{"date-parts":[[2022,11,9]],"date-time":"2022-11-09T22:17:53Z","timestamp":1668032273000},"page":"044012","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":18,"title":["Ultrathin HfO<sub>2<\/sub>\/Al<sub>2<\/sub>O<sub>3<\/sub> bilayer based reliable 1T1R RRAM electronic synapses with low power consumption for neuromorphic computing"],"prefix":"10.1088","volume":"2","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-6147-3747","authenticated-orcid":false,"given":"Qiang","family":"Wang","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4090-1850","authenticated-orcid":false,"given":"Yankun","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Ren","family":"Luo","sequence":"additional","affiliation":[]},{"given":"Jianjian","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Lanlong","family":"Ji","sequence":"additional","affiliation":[]},{"given":"Zhuangde","family":"Jiang","sequence":"additional","affiliation":[]},{"given":"Christian","family":"Wenger","sequence":"additional","affiliation":[]},{"given":"Zhitang","family":"Song","sequence":"additional","affiliation":[]},{"given":"Sannian","family":"Song","sequence":"additional","affiliation":[]},{"given":"Wei","family":"Ren","sequence":"additional","affiliation":[]},{"given":"Jinshun","family":"Bi","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8813-8885","authenticated-orcid":false,"given":"Gang","family":"Niu","sequence":"additional","affiliation":[]}],"member":"266","published-online":{"date-parts":[[2022,11,28]]},"reference":[{"key":"nceaca179bib1","doi-asserted-by":"publisher","DOI":"10.1088\/1674-4926\/42\/1\/013101","article-title":"Towards engineering in memristors for emerging memory and neuromorphic computing: a review","volume":"42","author":"Sokolov","year":"2021","journal-title":"J. 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