{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,23]],"date-time":"2026-01-23T10:24:42Z","timestamp":1769163882673,"version":"3.49.0"},"reference-count":68,"publisher":"IOP Publishing","issue":"3","license":[{"start":{"date-parts":[[2023,8,31]],"date-time":"2023-08-31T00:00:00Z","timestamp":1693440000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0"},{"start":{"date-parts":[[2023,8,31]],"date-time":"2023-08-31T00:00:00Z","timestamp":1693440000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"funder":[{"name":"The Iketani Science and Technology Foundation"},{"DOI":"10.13039\/501100001691","name":"KAKENHI","doi-asserted-by":"crossref","award":["JP22H04625"],"award-info":[{"award-number":["JP22H04625"]}],"id":[{"id":"10.13039\/501100001691","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["Neuromorph. Comput. Eng."],"published-print":{"date-parts":[[2023,9,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n               <jats:p>Artificial synapses capable of mimicking the fundamental functionalities of biological synapses are critical to the building of efficient neuromorphic systems. We have developed a H<jats:italic>\n                     <jats:sub>x<\/jats:sub>\n                  <\/jats:italic>WO<jats:sub>3<\/jats:sub>-based artificial synapse that replicates such synaptic functionalities via an all-solid-state redox transistor mechanism. The subject synaptic-H<jats:italic>\n                     <jats:sub>x<\/jats:sub>\n                  <\/jats:italic>WO<jats:sub>3<\/jats:sub> transistor, which operates by current pulse control, exhibits excellent synaptic properties including good linearity, low update variation and conductance modulation characteristics. We investigated the performance of the device under various operating conditions, and the impact of the characteristics of the device on artificial neural network computing. Although the subject synaptic-H<jats:italic>\n                     <jats:sub>x<\/jats:sub>\n                  <\/jats:italic>WO<jats:sub>3<\/jats:sub> transistor showed an insufficient recognition accuracy of 66% for a handwritten digit recognition task with voltage pulse control, it achieved an excellent accuracy of 88% with current pulse control, which is approaching the 93% accuracy of an ideal synaptic device. This result suggests that the performance of any redox-transistor-type artificial synapse can be dramatically improved by current pulse control, which in turn paves the way for further exploration and the evolution of advanced neuromorphic systems, with the potential to revolutionize the artificial intelligence domain. It further marks a significant stride towards the realization of high-performance, low-power consumption computing devices.<\/jats:p>","DOI":"10.1088\/2634-4386\/acf1c6","type":"journal-article","created":{"date-parts":[[2023,8,31]],"date-time":"2023-08-31T11:33:40Z","timestamp":1693481620000},"page":"034008","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":14,"title":["Enhanced synaptic characteristics of H\n                  <sub>x<\/sub>\n               WO<sub>3<\/sub>-based neuromorphic devices, achieved by current pulse control, for artificial neural networks"],"prefix":"10.1088","volume":"3","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3369-7700","authenticated-orcid":true,"given":"Daiki","family":"Nishioka","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6950-6160","authenticated-orcid":true,"given":"Takashi","family":"Tsuchiya","sequence":"additional","affiliation":[]},{"given":"Tohru","family":"Higuchi","sequence":"additional","affiliation":[]},{"given":"Kazuya","family":"Terabe","sequence":"additional","affiliation":[]}],"member":"266","published-online":{"date-parts":[[2023,8,31]]},"reference":[{"key":"nceacf1c6bib1","doi-asserted-by":"publisher","first-page":"436","DOI":"10.1038\/nature14539","article-title":"Deep learning","volume":"521","author":"LeCun","year":"2015","journal-title":"Nature"},{"key":"nceacf1c6bib2","doi-asserted-by":"publisher","DOI":"10.1002\/aisy.202200047","article-title":"A bio\u2010inspired neuromorphic sensory system","volume":"4","author":"Wang","year":"2022","journal-title":"Adv. Intell. Syst."},{"key":"nceacf1c6bib3","doi-asserted-by":"publisher","first-page":"1297","DOI":"10.1021\/nl904092h","article-title":"Nanoscale memristor device as synapse in neuromorphic systems","volume":"10","author":"Jo","year":"2010","journal-title":"Nano Lett."},{"key":"nceacf1c6bib4","doi-asserted-by":"publisher","first-page":"103","DOI":"10.1109\/VLSIT.2018.8510690","article-title":"A methodology to improve linearity of analog RRAM for neuromorphic computing","author":"Wu","year":"2018"},{"key":"nceacf1c6bib5","doi-asserted-by":"publisher","first-page":"25","DOI":"10.1109\/IEDM.2013.6724692","article-title":"Neuromorphic speech systems using advanced ReRAM-based synapse","author":"Park","year":"2013"},{"key":"nceacf1c6bib6","doi-asserted-by":"publisher","first-page":"994","DOI":"10.1109\/LED.2016.2582859","article-title":"Improved synaptic behavior under identical pulses using AlOx\/HfO2 bilayer RRAM array for neuromorphic systems","volume":"37","author":"Woo","year":"2016","journal-title":"IEEE Electron Device Lett."},{"key":"nceacf1c6bib7","doi-asserted-by":"publisher","first-page":"2179","DOI":"10.1021\/nl201040y","article-title":"Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing","volume":"12","author":"Kuzum","year":"2012","journal-title":"Nano Lett."},{"key":"nceacf1c6bib8","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202001243","article-title":"Memristive devices with multiple resistance states based on the migration of protons in \u03b1\u2010MoO3\/SrCoO2.5 stacks","volume":"7","author":"Wang","year":"2021","journal-title":"Adv. Electron. Mater."},{"key":"nceacf1c6bib9","doi-asserted-by":"publisher","first-page":"61","DOI":"10.1038\/nature14441","article-title":"Training and operation of an integrated neuromorphic network based on metal-oxide memristors","volume":"521","author":"Prezioso","year":"2015","journal-title":"Nature"},{"key":"nceacf1c6bib10","doi-asserted-by":"publisher","first-page":"335","DOI":"10.1038\/s41563-017-0001-5","article-title":"SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations","volume":"17","author":"Choi","year":"2018","journal-title":"Nat. Mater."},{"key":"nceacf1c6bib11","doi-asserted-by":"publisher","first-page":"7669","DOI":"10.1021\/nn202983n","article-title":"Short-term memory to long-term memory transition in a nanoscale memristor","volume":"5","author":"Chang","year":"2011","journal-title":"ACS nano"},{"key":"nceacf1c6bib12","doi-asserted-by":"publisher","first-page":"641","DOI":"10.1038\/s41586-020-1942-4","article-title":"Fully hardware-implemented memristor convolutional neural network","volume":"577","author":"Yao","year":"2020","journal-title":"Nature"},{"key":"nceacf1c6bib13","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1038\/ncomms15199","article-title":"Face classification using electronic synapses","volume":"8","author":"Yao","year":"2017","journal-title":"Nat. Commun."},{"key":"nceacf1c6bib14","doi-asserted-by":"publisher","first-page":"318","DOI":"10.1038\/nature23307","article-title":"Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing","volume":"548","author":"Kumar","year":"2017","journal-title":"Nature"},{"key":"nceacf1c6bib15","doi-asserted-by":"publisher","first-page":"3498","DOI":"10.1109\/TED.2015.2439635","article-title":"Experimental demonstration and tolerancing of a large-scale neural network (165000 synapses) using phase-change memory as the synaptic weight element","volume":"62","author":"Burr","year":"2015","journal-title":"IEEE Trans. Electron Devices"},{"key":"nceacf1c6bib16","doi-asserted-by":"publisher","DOI":"10.35848\/1882-0786\/ac926b","article-title":"Nanoarchitectonics intelligence with atomic switch and neuromorphic network system","volume":"15","author":"Tsuchiya","year":"2022","journal-title":"Appl. Phys. Express"},{"key":"nceacf1c6bib17","doi-asserted-by":"publisher","first-page":"1831","DOI":"10.1002\/adma.200903680","article-title":"Learning abilities achieved by a single solid\u2010state atomic switch","volume":"22","author":"Hasegawa","year":"2010","journal-title":"Adv. Mater."},{"key":"nceacf1c6bib18","doi-asserted-by":"publisher","first-page":"9515","DOI":"10.1021\/nn302510e","article-title":"On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion migration","volume":"6","author":"Yang","year":"2012","journal-title":"ACS Nano"},{"key":"nceacf1c6bib19","doi-asserted-by":"publisher","first-page":"SM0803","DOI":"10.35848\/1347-4065\/ac64e5","article-title":"Solid state ionics for the development of artificial intelligence components","volume":"61","author":"Terabe","year":"2022","journal-title":"Jpn. J. Appl. Phys."},{"key":"nceacf1c6bib20","doi-asserted-by":"publisher","DOI":"10.1080\/23746149.2022.2065217","article-title":"Atomic scale switches based on solid state ionics","volume":"7","author":"Terabe","year":"2022","journal-title":"Adv. Phys. X"},{"key":"nceacf1c6bib21","doi-asserted-by":"publisher","DOI":"10.7566\/JPSJ.88.054711","article-title":"Surface electron\u2013ion mixed conduction of Ti0. 99Sc0.01O2\u2212\u03b4 thin film with lattice distortion and oxygen vacancies","volume":"88","author":"Kawamura","year":"2019","journal-title":"J. Phys. Soc. Japan"},{"key":"nceacf1c6bib22","doi-asserted-by":"publisher","first-page":"SD1023","DOI":"10.35848\/1347-4065\/ac4dba","article-title":"Nanoionics-based neuromorphic function of a Pt\/Ti0.96Co0.04O2-\u03b4\/Pt multilayer device operating at low pulse voltage","volume":"61","author":"Takada","year":"2022","journal-title":"Jpn. J. Appl. Phys."},{"key":"nceacf1c6bib23","doi-asserted-by":"publisher","first-page":"SG1022","DOI":"10.35848\/1347-4065\/acbb86","article-title":"Neuromorphic learning and forgetting functions of Pt\/Ti0.99Sc0.01O2\u2212\u03b4\/Pt multilayer by Schottky barrier modulation","volume":"62","author":"Taniguchi","year":"2023","journal-title":"Jpn. J. Appl. Phys."},{"key":"nceacf1c6bib24","doi-asserted-by":"publisher","DOI":"10.1088\/2634-4386\/acc050","article-title":"Artificial visual neuron based on threshold switching memristors","volume":"3","author":"Wen","year":"2023","journal-title":"Neuromorph. Comput. Eng."},{"key":"nceacf1c6bib25","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/ab554b","article-title":"Emerging neuromorphic devices","volume":"31","author":"Ielmini","year":"2019","journal-title":"Nanotechnology"},{"key":"nceacf1c6bib26","doi-asserted-by":"publisher","DOI":"10.3389\/fnins.2021.636127","article-title":"In situ parallel training of analog neural network using electrochemical random-access memory","volume":"15","author":"Li","year":"2021","journal-title":"Front. Neurosci."},{"key":"nceacf1c6bib27","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202003984","article-title":"Filament\u2010free bulk resistive memory enables deterministic analogue switching","volume":"32","author":"Li","year":"2020","journal-title":"Adv. Mater."},{"key":"nceacf1c6bib28","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202204771","article-title":"ECRAM materials, devices, circuits and architectures: a perspective","author":"Talin","year":"2022","journal-title":"Adv. Mater."},{"key":"nceacf1c6bib29","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201604310","article-title":"Li\u2010ion synaptic transistor for low power analog computing","volume":"29","author":"Fuller","year":"2017","journal-title":"Adv. Mater."},{"key":"nceacf1c6bib30","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201804397","article-title":"Optoelectronic synapse based on igzo\u2010alkylated graphene oxide hybrid structure","volume":"28","author":"Sun","year":"2018","journal-title":"Adv. Funct. Mater."},{"key":"nceacf1c6bib31","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201804170","article-title":"All\u2010solid\u2010state synaptic transistor with ultralow conductance for neuromorphic computing","volume":"28","author":"Yang","year":"2018","journal-title":"Adv. Funct. Mater."},{"key":"nceacf1c6bib32","doi-asserted-by":"publisher","first-page":"414","DOI":"10.1038\/nmat4856","article-title":"A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing","volume":"16","author":"Van De Burgt","year":"2017","journal-title":"Nat. Mater."},{"key":"nceacf1c6bib33","doi-asserted-by":"publisher","first-page":"16749","DOI":"10.1021\/acsami.9b00226","article-title":"Fully printed all-solid-state organic flexible artificial synapse for neuromorphic computing","volume":"11","author":"Liu","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"nceacf1c6bib34","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2019.104035","article-title":"Versatile neuromorphic electronics by modulating synaptic decay of single organic synaptic transistor: from artificial neural networks to neuro-prosthetics","volume":"65","author":"Seo","year":"2019","journal-title":"Nano Energy"},{"key":"nceacf1c6bib35","doi-asserted-by":"publisher","first-page":"15446","DOI":"10.1021\/acsami.9b22925","article-title":"Electret-based organic synaptic transistor for neuromorphic computing","volume":"12","author":"Yu","year":"2020","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"nceacf1c6bib36","doi-asserted-by":"publisher","first-page":"570","DOI":"10.1126\/science.aaw5581","article-title":"Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing","volume":"364","author":"Fuller","year":"2019","journal-title":"Science"},{"key":"nceacf1c6bib37","doi-asserted-by":"publisher","first-page":"38982","DOI":"10.1021\/acsami.9b14338","article-title":"Low-voltage, CMOS-free synaptic memory based on Li X TiO2 redox transistors","volume":"11","author":"Yiyang","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"nceacf1c6bib38","doi-asserted-by":"publisher","first-page":"04FK01","DOI":"10.7567\/JJAP.57.04FK01","article-title":"Neuromorphic transistor achieved by redox reaction of WO3 thin film","volume":"57","author":"Tsuchiya","year":"2018","journal-title":"Jpn. J. Appl. Phys."},{"key":"nceacf1c6bib39","doi-asserted-by":"publisher","DOI":"10.1016\/j.ssi.2021.115638","article-title":"Substrate effect on the neuromorphic function of nanoionics-based transistors fabricated using WO3 thin film","volume":"364","author":"Manikandan","year":"2021","journal-title":"Solid State Ion."},{"key":"nceacf1c6bib40","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201901100","article-title":"Controlled ionic tunneling in lithium nanoionic synaptic transistor through atomically thin graphene layer for neuromorphic computing","volume":"6","author":"Nikam","year":"2020","journal-title":"Adv. Electron. Mater."},{"key":"nceacf1c6bib41","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/abaa0e","article-title":"Sodium-based nano-ionic synaptic transistor with improved retention characteristics","volume":"31","author":"Lee","year":"2020","journal-title":"Nanotechnology"},{"key":"nceacf1c6bib42","doi-asserted-by":"publisher","first-page":"2406","DOI":"10.1021\/acsaelm.9b00560","article-title":"Photoelectric IGZO electric-double-layer transparent artificial synapses for emotional state simulation","volume":"1","author":"Peng","year":"2019","journal-title":"ACS Appl. Electron. Mater."},{"key":"nceacf1c6bib43","doi-asserted-by":"publisher","first-page":"1061","DOI":"10.1021\/acsami.9b18605","article-title":"Solution-processed, electrolyte-gated In2O3 flexible synaptic transistors for brain-inspired neuromorphic applications","volume":"12","author":"Zhu","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"nceacf1c6bib44","doi-asserted-by":"publisher","first-page":"100","DOI":"10.1016\/j.neunet.2019.03.005","article-title":"Recent advances in physical reservoir computing: a review","volume":"115","author":"Tanaka","year":"2019","journal-title":"Neural Netw."},{"key":"nceacf1c6bib45","doi-asserted-by":"publisher","DOI":"10.35848\/1347-4065\/ab8d4f","article-title":"Physical reservoir computing\u2014an introductory perspective","volume":"59","author":"Nakajima","year":"2020","journal-title":"Jpn. J. Appl. Phys."},{"key":"nceacf1c6bib46","doi-asserted-by":"publisher","first-page":"eade1156","DOI":"10.1126\/sciadv.ade1156","article-title":"Edge-of-chaos learning achieved by ion-electron\u2013coupled dynamics in an ion-gating reservoir","volume":"8","author":"Nishioka","year":"2022","journal-title":"Sci. Adv."},{"key":"nceacf1c6bib47","doi-asserted-by":"publisher","DOI":"10.1002\/aisy.202300123","article-title":"A redox-based ion-gating reservoir, utilizing double reservoir states in drain and gate nonlinear responses","author":"Wada","year":"2023","journal-title":"Adv. Intell. Syst."},{"key":"nceacf1c6bib48","doi-asserted-by":"publisher","DOI":"10.1016\/j.mtadv.2023.100393","article-title":"Ultrafast-switching of an all-solid-state electric double layer transistor with a porous yttria-stabilized zirconia proton conductor and the application to neuromorphic computing","volume":"18","author":"Takayanagi","year":"2023","journal-title":"Mater. Today Adv."},{"key":"nceacf1c6bib49","article-title":"Experimental demonstration of high-performance physical reservoir computing with nonlinear interfered spin wave multi-detection","author":"Namiki","year":"2022"},{"key":"nceacf1c6bib50","doi-asserted-by":"publisher","first-page":"4008","DOI":"10.1038\/s41467-021-24260-z","article-title":"Avalanches and edge-of-chaos learning in neuromorphic nanowire networks","volume":"12","author":"Hochstetter","year":"2021","journal-title":"Nat. Commun."},{"key":"nceacf1c6bib51","doi-asserted-by":"publisher","first-page":"2204","DOI":"10.1038\/s41467-017-02337-y","article-title":"Reservoir computing using dynamic memristors for temporal information processing","volume":"8","author":"Du","year":"2017","journal-title":"Nat. Commun."},{"key":"nceacf1c6bib52","doi-asserted-by":"publisher","DOI":"10.1002\/aisy.201900084","article-title":"Reservoir computing using diffusive memristors","volume":"1","author":"Midya","year":"2019","journal-title":"Adv. Intell. Syst."},{"key":"nceacf1c6bib53","doi-asserted-by":"publisher","first-page":"195","DOI":"10.1038\/s41563-021-01099-9","article-title":"In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks","volume":"21","author":"Milano","year":"2022","journal-title":"Nat. Mater."},{"key":"nceacf1c6bib54","doi-asserted-by":"publisher","first-page":"2278","DOI":"10.1109\/5.726791","article-title":"Gradient-based learning applied to document recognition","volume":"86","author":"Lecun","year":"1998","journal-title":"Proc. IEEE"},{"key":"nceacf1c6bib55","doi-asserted-by":"publisher","first-page":"209","DOI":"10.1006\/jssc.1999.8173","article-title":"The high-temperature phases of WO3","volume":"144","author":"Vogt","year":"1999","journal-title":"J. Solid State Chem."},{"key":"nceacf1c6bib56","doi-asserted-by":"publisher","first-page":"3067","DOI":"10.1109\/TCAD.2018.2789723","article-title":"NeuroSim: a circuit-level macro model for benchmarking neuro-inspired architectures in online learning","volume":"37","author":"Chen","year":"2018","journal-title":"IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst."},{"key":"nceacf1c6bib57","doi-asserted-by":"publisher","first-page":"288","DOI":"10.1002\/zaac.19512650413","volume":"265","author":"Glemser","year":"1951","journal-title":"Z. Anorg. Allg. Chem."},{"key":"nceacf1c6bib58","author":"Granqvist","year":"1995"},{"key":"nceacf1c6bib59","doi-asserted-by":"publisher","first-page":"29","DOI":"10.1016\/j.bbr.2016.04.041","article-title":"Resistive memory device requirements for a neural algorithm accelerator","author":"Agarwal","year":"2016"},{"key":"nceacf1c6bib60","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.57.100309","article-title":"Electrochromic properties of epitaxial WO3 thin films grown on sapphire substrates","volume":"57","author":"Yano","year":"2018","journal-title":"Jpn. J. Appl. Phys."},{"key":"nceacf1c6bib61","doi-asserted-by":"publisher","DOI":"10.1038\/srep25819","article-title":"A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry","volume":"6","author":"Katase","year":"2016","journal-title":"Sci. Rep."},{"key":"nceacf1c6bib62","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1186\/s11671-020-3267-5","article-title":"Surface proton conduction of Sm-doped CeO2-\u03b4 thin film preferentially grown on Al2O3 (0001)","volume":"15","author":"Nishioka","year":"2020","journal-title":"Nanoscale Res. Lett."},{"key":"nceacf1c6bib63","doi-asserted-by":"publisher","first-page":"SD1017","DOI":"10.35848\/1347-4065\/ac4feb","article-title":"Surface proton conduction below 100 \u00b0C of Ce0. 80Sm0.20O2\u2212\u03b4 thin film with oxygen vacancies","volume":"61","author":"Notake","year":"2022","journal-title":"Jpn. J. Appl. Phys."},{"key":"nceacf1c6bib64","doi-asserted-by":"publisher","first-page":"482","DOI":"10.1038\/s41467-023-35857-x","article-title":"Tailoring polymer electrolyte ionic conductivity for production of low-temperature operating quasi-all-solid-state lithium metal batteries","volume":"14","author":"Li","year":"2023","journal-title":"Nat. Commun."},{"key":"nceacf1c6bib65","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202201718","article-title":"Ionic conduction in polymer\u2010based solid electrolytes","volume":"10","author":"Li","year":"2023","journal-title":"Adv. Sci."},{"key":"nceacf1c6bib66","doi-asserted-by":"publisher","first-page":"SIIG09","DOI":"10.35848\/1347-4065\/ab7e12","article-title":"Oxygen-tolerant operation of all-solid-state ionic-gating devices: advantage of all-solid-state structure for ionic-gating","volume":"59","author":"Nishioka","year":"2020","journal-title":"Jpn. J. Appl. Phys."},{"key":"nceacf1c6bib67","doi-asserted-by":"publisher","first-page":"SDDG08","DOI":"10.7567\/1347-4065\/ab138b","article-title":"Sr-diffusion-induced inhibition of (100)-oriented growth Ca1\u2212xSrxVO3 thin film on a LaAlO3 substrate in pulsed laser deposition","volume":"58","author":"Takayanagi","year":"2019","journal-title":"Jpn. J. Appl. Phys."},{"key":"nceacf1c6bib68","doi-asserted-by":"publisher","first-page":"57","DOI":"10.14723\/tmrsj.44.57","article-title":"Conductivity modulation by CaVO3-based all-solid-state redox transistor with ion transport of Li+ or H+","volume":"44","author":"Takayanagi","year":"2019","journal-title":"Trans. Mater. Res. Soc. Japan"}],"container-title":["Neuromorphic Computing and Engineering"],"original-title":[],"link":[{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2634-4386\/acf1c6","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2634-4386\/acf1c6\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2634-4386\/acf1c6\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2634-4386\/acf1c6\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,8,31]],"date-time":"2023-08-31T11:33:47Z","timestamp":1693481627000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2634-4386\/acf1c6"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,8,31]]},"references-count":68,"journal-issue":{"issue":"3","published-online":{"date-parts":[[2023,8,31]]},"published-print":{"date-parts":[[2023,9,1]]}},"URL":"https:\/\/doi.org\/10.1088\/2634-4386\/acf1c6","relation":{},"ISSN":["2634-4386"],"issn-type":[{"value":"2634-4386","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,8,31]]},"assertion":[{"value":"Enhanced synaptic characteristics of H\n                  x\n               WO3-based neuromorphic devices, achieved by current pulse control, for artificial neural networks","name":"article_title","label":"Article Title"},{"value":"Neuromorphic Computing and Engineering","name":"journal_title","label":"Journal Title"},{"value":"paper","name":"article_type","label":"Article Type"},{"value":"\u00a9 2023 The Author(s). Published by IOP Publishing Ltd","name":"copyright_information","label":"Copyright Information"},{"value":"2023-06-26","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2023-08-18","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2023-08-31","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}