{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,14]],"date-time":"2026-05-14T07:21:32Z","timestamp":1778743292310,"version":"3.51.4"},"reference-count":40,"publisher":"IOP Publishing","issue":"3","license":[{"start":{"date-parts":[[2023,9,11]],"date-time":"2023-09-11T00:00:00Z","timestamp":1694390400000},"content-version":"vor","delay-in-days":10,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0"},{"start":{"date-parts":[[2023,9,11]],"date-time":"2023-09-11T00:00:00Z","timestamp":1694390400000},"content-version":"tdm","delay-in-days":10,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"funder":[{"DOI":"10.13039\/100010661","name":"Horizon 2020 Framework Programme","doi-asserted-by":"crossref","award":["871501"],"award-info":[{"award-number":["871501"]}],"id":[{"id":"10.13039\/100010661","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["Neuromorph. Comput. Eng."],"published-print":{"date-parts":[[2023,9,1]]},"abstract":"Abstract<\/jats:title>\n The frequency of vanadium dioxide (VO2<\/jats:sub>) oscillators is a fundamental figure of merit for the realization of neuromorphic circuits called oscillatory neural networks (ONNs) since the high frequency of oscillators ensures low-power consuming, real-time computing ONNs. In this study, we perform electrothermal 3D technology computer-aided design (TCAD) simulations of a VO2<\/jats:sub> relaxation oscillator. We find that there exists an upper limit to its operating frequency, where such a limit is not predicted from a purely circuital model of the VO2<\/jats:sub> oscillator. We investigate the intrinsic physical mechanisms that give rise to this upper limit. Our TCAD simulations show that it arises a dependence on the frequency of the points of the curve current versus voltage across the VO2<\/jats:sub> device corresponding to the insulator-to-metal transition (IMT) and metal-to-insulator transition (MIT) during oscillation, below some threshold values of \n \n \n \n C<\/mml:mi>\n \n \n e<\/mml:mi>\n x<\/mml:mi>\n t<\/mml:mi>\n <\/mml:mrow>\n <\/mml:mrow>\n <\/mml:msub>\n <\/mml:math>\n \n <\/jats:inline-formula>. This implies that the condition for the self-oscillatory regime may be satisfied by a given load-line in the low-frequency range but no longer at higher frequencies, with consequent suppression of oscillations. We note that this variation of the IMT\/MIT points below some threshold values of \n \n \n \n C<\/mml:mi>\n \n \n e<\/mml:mi>\n x<\/mml:mi>\n t<\/mml:mi>\n <\/mml:mrow>\n <\/mml:mrow>\n <\/mml:msub>\n <\/mml:math>\n \n <\/jats:inline-formula> is due to a combination of different factors: intermediate resistive states achievable by VO2<\/jats:sub> channel and the interplay between frequency and heat transfer rate. Although the upper limit on the frequency that we extract is linked to the specific VO2<\/jats:sub> device we simulate, our findings apply qualitatively to any VO2<\/jats:sub> oscillator. Overall, our study elucidates the link between electrical and thermal behavior in VO2<\/jats:sub> devices that sets a constraint on the upper values of the operating frequency of any VO2<\/jats:sub> oscillator.<\/jats:p>","DOI":"10.1088\/2634-4386\/acf2bf","type":"journal-article","created":{"date-parts":[[2023,8,22]],"date-time":"2023-08-22T22:31:19Z","timestamp":1692743479000},"page":"034010","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":8,"title":["How fast can vanadium dioxide neuron-mimicking devices oscillate? Physical mechanisms limiting the frequency of vanadium dioxide oscillators"],"prefix":"10.1088","volume":"3","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-9271-1189","authenticated-orcid":true,"given":"S","family":"Carapezzi","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4979-6754","authenticated-orcid":false,"given":"A","family":"Plews","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8830-3572","authenticated-orcid":false,"given":"G","family":"Boschetto","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7656-5874","authenticated-orcid":false,"given":"A","family":"Nejim","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9873-2717","authenticated-orcid":false,"given":"S","family":"Karg","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8573-2910","authenticated-orcid":false,"given":"A","family":"Todri-Sanial","sequence":"additional","affiliation":[]}],"member":"266","published-online":{"date-parts":[[2023,9,11]]},"reference":[{"key":"nceacf2bfbib1","doi-asserted-by":"publisher","first-page":"3293","DOI":"10.1038\/s41598-020-60373-z","article-title":"Resistive switching studies in VO2 thin films","volume":"10","author":"Rana","year":"2020","journal-title":"Sci. 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