{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,27]],"date-time":"2026-02-27T15:19:52Z","timestamp":1772205592309,"version":"3.50.1"},"reference-count":79,"publisher":"IOP Publishing","issue":"2","license":[{"start":{"date-parts":[[2025,5,13]],"date-time":"2025-05-13T00:00:00Z","timestamp":1747094400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2025,5,13]],"date-time":"2025-05-13T00:00:00Z","timestamp":1747094400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"funder":[{"DOI":"10.13039\/100019637","name":"HORIZON","doi-asserted-by":"crossref","award":["101161114"],"award-info":[{"award-number":["101161114"]}],"id":[{"id":"10.13039\/100019637","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["Neuromorph. Comput. Eng."],"published-print":{"date-parts":[[2025,6,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n               <jats:p>The intriguing properties of two-dimensional (2D) materials render them attractive for energy efficient neuromorphic computations because their atomic scale thickness can alleviate the power requirements of the device. In parallel, their layered structure can be leveraged to optically program the device and further reduce power consumption. Along these lines, in this work, a forming free memory device consisting of a MoS<jats:sub>2<\/jats:sub> monolayer with dimensions of \u223c100 <jats:italic>\u03bc<\/jats:italic>m decorated with small (\u223c3 nm diameter) Pt nanoparticles (NPs) was fabricated. The impact of the Pt NPs\u2019 surface density on the optoelectronic neuromorphic properties under ultraviolet irradiation (<jats:italic>\u03bb<\/jats:italic> = 390 nm) was systematically investigated. More specifically, the reference samples without Pt NPs exhibited only synaptic behavior, while the NPs-based one (surface density of \u223c2 \u00d7 10<jats:sup>12<\/jats:sup> NPs cm<jats:sup>\u22122<\/jats:sup>) presented a neuron-like response. An elevated surface density (\u223c5 \u00d7 10<jats:sup>12<\/jats:sup> NPs cm<jats:sup>\u22122<\/jats:sup>) just reduced the frequency of the generated spikes. Various synaptic plasticity and neuronal coding schemes were experimentally demonstrated. The underlying origins of this behavior were attributed to band bending in the Pt NPs-MoS<jats:sub>2<\/jats:sub> interface, leading to a trapping effect of electrons on the metallic NPs, evidenced by photoluminescence quenching, followed by a detrapping process, demonstrated by the reduced firing rate when using the Pt layer with the higher surface density. This versatility of the devices was leveraged to simulate the behavior of a fully optoelectronic spiking neural network. Considering the low energy consumption per spike (\u223c400 pJ) during the experimental recorded neuromorphic properties, a dramatically reduced power consumption of \u223c320 <jats:italic>\u03bc<\/jats:italic>W was extracted during the pattern recognition of optical images. Our work provides valuable insights for emulating the artificial synaptic and neuronal behavior and paves the way for the development of next-generation and fully memristive artificial neural networks with a very small energy footprint.<\/jats:p>","DOI":"10.1088\/2634-4386\/add36d","type":"journal-article","created":{"date-parts":[[2025,5,2]],"date-time":"2025-05-02T22:51:09Z","timestamp":1746226269000},"page":"024010","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":3,"title":["Reconfigurable optoelectronic neuromorphic properties of MoS<sub>2<\/sub>-based memristors decorated with Pt nanoparticles for low power spiking neural network applications"],"prefix":"10.1088","volume":"5","author":[{"ORCID":"https:\/\/orcid.org\/0009-0004-9304-0614","authenticated-orcid":true,"given":"Chrysi","family":"Panagopoulou","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5395-0777","authenticated-orcid":true,"given":"Panagiotis","family":"Bousoulas","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0000-8296-402X","authenticated-orcid":true,"given":"Georgia Iliani","family":"Papouli","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Maria","family":"Kainourgiaki","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Charalampos","family":"Tsioustas","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6227-3272","authenticated-orcid":true,"given":"Maria","family":"Karnachoriti","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Athanassios G","family":"Kontos","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5189-3396","authenticated-orcid":true,"given":"Dimitris","family":"Tsoukalas","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"266","published-online":{"date-parts":[[2025,5,13]]},"reference":[{"key":"nceadd36dbib1","doi-asserted-by":"publisher","DOI":"10.1088\/2634-4386\/ac4a83","article-title":"Roadmap on neuromorphic computing and engineering","volume":"2","author":"Christensen","year":"2022","journal-title":"Neuromorph. Comput. Eng."},{"key":"nceadd36dbib2","doi-asserted-by":"publisher","DOI":"10.1063\/5.0067352","article-title":"Neuromorphic computing: devices, hardware, and system application facilitated by two-dimensional materials","volume":"8","author":"Bian","year":"2021","journal-title":"Appl. Phys. Rev."},{"key":"nceadd36dbib3","doi-asserted-by":"publisher","first-page":"2729","DOI":"10.1021\/acsaelm.1c00302","article-title":"Highly flexible artificial synapses from SiO2-based conductive bridge memristors and Pt nanoparticles through a crack suppression technique","volume":"3","author":"Papakonstantinopoulos","year":"2021","journal-title":"ACS Appl. Electron. Mater."},{"key":"nceadd36dbib4","doi-asserted-by":"publisher","first-page":"15839","DOI":"10.1021\/acsami.2c21688","article-title":"Realizing electronic synapses by defect engineering in polycrystalline two-dimensional MoS2 for neuromorphic computing","volume":"15","author":"Lee","year":"2023","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"nceadd36dbib5","doi-asserted-by":"publisher","first-page":"2360","DOI":"10.1109\/TED.2022.3160138","article-title":"Low power stochastic neurons from SiO2-based bilayer conductive bridge memristors for probabilistic spiking neural network applications\u2014part I: experimental characterization","volume":"69","author":"Bousoulas","year":"2022","journal-title":"IEEE Trans. Electron Devices"},{"key":"nceadd36dbib6","doi-asserted-by":"publisher","first-page":"9711","DOI":"10.1021\/acs.nanolett.3c02217","article-title":"Self-assembled Au nanoelectrodes: enabling low-threshold-voltage HfO2-based artificial neurons","volume":"23","author":"Dou","year":"2023","journal-title":"Nano Lett."},{"key":"nceadd36dbib7","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202301063","article-title":"Reconfigurable neuromorphic computing: materials, devices, and integration","volume":"35","author":"Xu","year":"2023","journal-title":"Adv. Mater."},{"key":"nceadd36dbib8","doi-asserted-by":"publisher","first-page":"18645","DOI":"10.1021\/acsanm.3c03397","article-title":"Flexible memristor-based nanoelectronic devices for wearable applications: a review","volume":"6","author":"Rao","year":"2023","journal-title":"ACS Appl. Nano Mater."},{"key":"nceadd36dbib9","doi-asserted-by":"publisher","first-page":"eadi0591","DOI":"10.1126\/scirobotics.adi0591","article-title":"Fully neuromorphic vision and control for autonomous drone flight","volume":"9","author":"Paredes-Vall\u00e9s","year":"2024","journal-title":"Sci. Robot."},{"key":"nceadd36dbib10","doi-asserted-by":"publisher","first-page":"eabc4797","DOI":"10.1126\/sciadv.abc4797","article-title":"Multichannel parallel processing of neural signals in memristor arrays","volume":"6","author":"Liu","year":"2020","journal-title":"Sci. Adv."},{"key":"nceadd36dbib11","doi-asserted-by":"publisher","first-page":"9391","DOI":"10.1021\/acs.nanolett.4c02658","article-title":"Reconfigurable neuromorphic computing with 2D material heterostructures for versatile neural information processing","volume":"24","author":"Hu","year":"2024","journal-title":"Nano Lett."},{"key":"nceadd36dbib12","doi-asserted-by":"publisher","first-page":"7432","DOI":"10.1038\/s41467-022-35160-1","article-title":"Reconfigurable neuromorphic memristor network for ultralow-power smart textile electronics","volume":"13","author":"Wang","year":"2022","journal-title":"Nat. Commun."},{"key":"nceadd36dbib13","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202111996","article-title":"Reconfigurable synaptic and neuronal functions in a V\/VOx\/HfWOx\/Pt memristor for nonpolar spiking convolutional neural network","volume":"32","author":"Fu","year":"2022","journal-title":"Adv. Funct. Mater."},{"key":"nceadd36dbib14","doi-asserted-by":"publisher","first-page":"5371","DOI":"10.1021\/acs.nanolett.4c01319","article-title":"Reconfigurable Ag\/HfO2\/NiO\/Pt memristors with stable synchronous synaptic and neuronal functions for renewable homogeneous neuromorphic computing system","volume":"24","author":"Chen","year":"2024","journal-title":"Nano Lett."},{"key":"nceadd36dbib15","doi-asserted-by":"publisher","first-page":"2074","DOI":"10.1038\/s41467-022-29727-1","article-title":"Reconfigurable halide perovskite nanocrystal memristors for neuromorphic computing","volume":"13","author":"John","year":"2022","journal-title":"Nat. Commun."},{"key":"nceadd36dbib16","doi-asserted-by":"publisher","first-page":"24598","DOI":"10.1021\/acsami.8b05749","article-title":"Analog and digital bipolar resistive switching in solution-combustion-processed NiO memristor","volume":"10","author":"Li","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"nceadd36dbib17","doi-asserted-by":"publisher","DOI":"10.1063\/5.0128200","article-title":"A low-power reconfigurable memristor for artificial neurons and synapses","volume":"122","author":"Yan","year":"2023","journal-title":"Appl. Phys. Lett."},{"key":"nceadd36dbib18","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202004398","article-title":"A habituation sensory nervous system with memristors","volume":"32","author":"Wu","year":"2020","journal-title":"Adv. Mater."},{"key":"nceadd36dbib19","doi-asserted-by":"publisher","DOI":"10.1016\/j.isci.2020.101676","article-title":"Two-dimensional near-atom-thickness materials for emerging neuromorphic devices and applications","volume":"23","author":"Ko","year":"2020","journal-title":"iScience"},{"key":"nceadd36dbib20","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202007081","article-title":"Emerging 2D memory devices for in\u2010memory computing","volume":"33","author":"Yin","year":"2021","journal-title":"Adv. Mater."},{"key":"nceadd36dbib21","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202307951","article-title":"Resistive memory devices at the thinnest limit: progress and challenges","volume":"36","author":"Li","year":"2024","journal-title":"Adv. Mater."},{"key":"nceadd36dbib22","doi-asserted-by":"publisher","first-page":"2411","DOI":"10.1021\/acs.nanolett.8b05140","article-title":"Vertical MoS2 double-layer memristor with electrochemical metallization as an atomic-scale synapse with switching thresholds approaching 100 mV","volume":"19","author":"Xu","year":"2019","journal-title":"Nano Lett."},{"key":"nceadd36dbib23","doi-asserted-by":"publisher","first-page":"434","DOI":"10.1021\/acs.nanolett.7b04342","article-title":"Atomristor: nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides","volume":"18","author":"Ge","year":"2018","journal-title":"Nano Lett."},{"key":"nceadd36dbib24","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202101099","article-title":"Electronic and photoelectronic memristors based on 2D materials","volume":"8","author":"Tang","year":"2022","journal-title":"Adv. Electron. Mater."},{"key":"nceadd36dbib25","doi-asserted-by":"publisher","first-page":"1386","DOI":"10.1109\/TED.2023.3239435","article-title":"MoS2-based optical device as artificial synapse for neuromorphic computing","volume":"70","author":"Sharmila","year":"2023","journal-title":"IEEE Trans. Electron Devices"},{"key":"nceadd36dbib26","doi-asserted-by":"publisher","DOI":"10.1002\/smll.201800079","article-title":"Photonic potentiation and electric habituation in ultrathin memristive synapses based on monolayer MoS2","volume":"14","author":"He","year":"2018","journal-title":"Small"},{"key":"nceadd36dbib27","doi-asserted-by":"publisher","DOI":"10.1063\/5.0127880","article-title":"A memristor based on two-dimensional MoSe2\/MoS2 heterojunction for synaptic device application","volume":"121","author":"Liu","year":"2022","journal-title":"Appl. Phys. Lett."},{"key":"nceadd36dbib28","doi-asserted-by":"publisher","DOI":"10.1002\/smtd.202201679","article-title":"Optoelectronic synaptic memtransistor based on 2D SnSe\/MoS2 van der Waals heterostructure under UV-ozone treatment","volume":"7","author":"Yan","year":"2023","journal-title":"Small Methods"},{"key":"nceadd36dbib29","doi-asserted-by":"publisher","first-page":"1766","DOI":"10.1021\/acsanm.0c03205","article-title":"Monolayer MoS2\/WO3 heterostructures with sulfur anion reservoirs as electronic synapses for neuromorphic computing","volume":"4","author":"Hao","year":"2021","journal-title":"ACS Appl. Nano Mater."},{"key":"nceadd36dbib30","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202101201","article-title":"Artificial optoelectronic synapses based on TiNx O2\u2014x\/MoS2 heterojunction for neuromorphic computing and visual system","volume":"31","author":"Wang","year":"2021","journal-title":"Adv. Funct. Mater."},{"key":"nceadd36dbib31","doi-asserted-by":"publisher","DOI":"10.1002\/admt.202301355","article-title":"Self\u2010powered optoelectronic synaptic devices based on In2 Se3 \/MoS2 ferroelectric heterojunction with boosted performance","volume":"9","author":"Feng","year":"2024","journal-title":"Adv. Mater. Technol."},{"key":"nceadd36dbib32","doi-asserted-by":"publisher","first-page":"2869","DOI":"10.1021\/acsaelm.2c00362","article-title":"Demonstration of enhanced switching variability and conductance quantization properties in a SiO2 conducting bridge resistive memory with embedded two-dimensional MoS2 material","volume":"4","author":"Kitsios","year":"2022","journal-title":"ACS Appl. Electron. Mater."},{"key":"nceadd36dbib33","doi-asserted-by":"publisher","first-page":"8288","DOI":"10.1021\/acs.nanolett.3c02499","article-title":"Photoinduced nonvolatile resistive switching behavior in oxygen-doped MoS2 for a neuromorphic vision system","volume":"23","author":"Chang","year":"2023","journal-title":"Nano Lett."},{"key":"nceadd36dbib34","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202213348","article-title":"Oxygen incorporated MoS2 for rectification\u2010mediated resistive switching and artificial neural network","volume":"34","author":"Xiong","year":"2024","journal-title":"Adv. Funct. Mater."},{"key":"nceadd36dbib35","doi-asserted-by":"publisher","first-page":"3175","DOI":"10.1021\/acsaelm.3c01808","article-title":"Logical perception of artificial vision based on nonlinear neuromorphic responses of optoelectronic synapses","volume":"6","author":"Chen","year":"2024","journal-title":"ACS Appl. Electron. Mater."},{"key":"nceadd36dbib36","doi-asserted-by":"publisher","first-page":"9584","DOI":"10.1021\/acsami.2c20166","article-title":"All-optically controlled artificial synapses based on light-induced adsorption and desorption for neuromorphic vision","volume":"15","author":"Liang","year":"2023","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"nceadd36dbib37","doi-asserted-by":"publisher","first-page":"3696","DOI":"10.1021\/acsnano.2c10816","article-title":"Optogenetics-inspired fluorescent synaptic devices with nonvolatility","volume":"17","author":"Wang","year":"2023","journal-title":"ACS Nano"},{"key":"nceadd36dbib38","doi-asserted-by":"publisher","DOI":"10.1063\/5.0168362","article-title":"Surface-plasmon-enhanced MoS2 multifunctional optoelectronic memory for emulating human retinal imaging","volume":"123","author":"Zhou","year":"2023","journal-title":"Appl. Phys. Lett."},{"key":"nceadd36dbib39","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2021.138808","article-title":"Capping technique for chemical vapor deposition of large and uniform MoS2 flakes","volume":"733","author":"Tsigkourakos","year":"2021","journal-title":"Thin Solid Films"},{"key":"nceadd36dbib40","doi-asserted-by":"publisher","DOI":"10.1063\/1.4905476","article-title":"Thickness modulated MoS2 grown by chemical vapor deposition for transparent and flexible electronic devices","volume":"106","author":"Park","year":"2015","journal-title":"Appl. Phys. Lett."},{"key":"nceadd36dbib41","doi-asserted-by":"publisher","first-page":"121","DOI":"10.1016\/0368-2048(77)85010-X","article-title":"A comparison of different spectrometers and charge corrections used in x-ray photoelectron spectroscopy","volume":"10","author":"Nefedov","year":"1977","journal-title":"J. Electron Spectrosc. Relat. Phenom."},{"key":"nceadd36dbib42","doi-asserted-by":"publisher","first-page":"1385","DOI":"10.1002\/adfm.201102111","article-title":"From bulk to monolayer MoS2: evolution of Raman scattering","volume":"22","author":"Li","year":"2012","journal-title":"Adv. Funct. Mater."},{"key":"nceadd36dbib43","doi-asserted-by":"publisher","first-page":"279","DOI":"10.3762\/bjnano.15.26","article-title":"Determining by Raman spectroscopy the average thickness and N -layer-specific surface coverages of MoS2 thin films with domains much smaller than the laser spot size","volume":"15","author":"Wasem Klein","year":"2024","journal-title":"Beilstein J. Nanotechnol."},{"key":"nceadd36dbib44","doi-asserted-by":"publisher","first-page":"590","DOI":"10.3390\/nano8080590","article-title":"Feasible route for a large area few-layer MoS2 with magnetron sputtering","volume":"8","author":"Zhong","year":"2018","journal-title":"Nanomaterials"},{"key":"nceadd36dbib45","doi-asserted-by":"publisher","first-page":"5944","DOI":"10.1021\/nl403036h","article-title":"Tunable photoluminescence of monolayer MoS2 via chemical doping","volume":"13","author":"Mouri","year":"2013","journal-title":"Nano Lett."},{"key":"nceadd36dbib46","doi-asserted-by":"publisher","DOI":"10.1063\/5.0044647","article-title":"Tuning the analog synaptic properties of forming free SiO2 memristors by material engineering","volume":"118","author":"Bousoulas","year":"2021","journal-title":"Appl. Phys. Lett."},{"key":"nceadd36dbib47","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202209968","article-title":"Fully optical in operando investigation of ambient condition electrical switching in MoS2 nanodevices","volume":"35","author":"Symonowicz","year":"2023","journal-title":"Adv. Mater."},{"key":"nceadd36dbib48","doi-asserted-by":"publisher","first-page":"403","DOI":"10.1038\/nnano.2015.56","article-title":"Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2","volume":"10","author":"Sangwan","year":"2015","journal-title":"Nat. Nanotechnol."},{"key":"nceadd36dbib49","doi-asserted-by":"publisher","first-page":"572","DOI":"10.1021\/acs.nanolett.5b04260","article-title":"Memristive behavior and ideal memristor of 1T phase MoS2 nanosheets","volume":"16","author":"Cheng","year":"2016","journal-title":"Nano Lett."},{"key":"nceadd36dbib50","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202300635","article-title":"The role of vacancy dynamics in two\u2010dimensional memristive devices","volume":"10","author":"Spetzler","year":"2024","journal-title":"Adv. Electron. Mater."},{"key":"nceadd36dbib51","doi-asserted-by":"publisher","DOI":"10.1038\/srep31224","article-title":"MoS2 memristor with photoresistive switching","volume":"6","author":"Wang","year":"2016","journal-title":"Sci. Rep."},{"key":"nceadd36dbib52","doi-asserted-by":"publisher","first-page":"19544","DOI":"10.1021\/acs.jpcc.1c05473","article-title":"Toward a comprehensive understanding of oxygen on MoS2: from reaction to optical properties","volume":"125","author":"Wang","year":"2021","journal-title":"J. Phys. Chem. C"},{"key":"nceadd36dbib53","doi-asserted-by":"publisher","first-page":"5738","DOI":"10.1021\/nn500532f","article-title":"Strong photoluminescence enhancement of MoS2 through defect engineering and oxygen bonding","volume":"8","author":"Nan","year":"2014","journal-title":"ACS Nano"},{"key":"nceadd36dbib54","doi-asserted-by":"publisher","first-page":"4134","DOI":"10.1021\/acsnano.5b07388","article-title":"Raman shifts in electron-irradiated monolayer MoS2","volume":"10","author":"Parkin","year":"2016","journal-title":"ACS Nano"},{"key":"nceadd36dbib55","doi-asserted-by":"publisher","DOI":"10.1038\/srep10440","article-title":"Layer dependence and gas molecule absorption property in MoS2 Schottky diode with asymmetric metal contacts","volume":"5","author":"Yoon","year":"2015","journal-title":"Sci. Rep."},{"key":"nceadd36dbib56","doi-asserted-by":"publisher","first-page":"45843","DOI":"10.1021\/acsami.1c11359","article-title":"Free-standing multilayer molybdenum disulfide memristor for brain-inspired neuromorphic applications","volume":"13","author":"Abnavi","year":"2021","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"nceadd36dbib57","doi-asserted-by":"publisher","first-page":"305","DOI":"10.1016\/S0166-2236(00)01580-0","article-title":"Facilitation, augmentation and potentiation at central synapses","volume":"23","author":"Thomson","year":"2000","journal-title":"Trends Neurosci."},{"key":"nceadd36dbib58","doi-asserted-by":"publisher","first-page":"355","DOI":"10.1146\/annurev.physiol.64.092501.114547","article-title":"Short-term synaptic plasticity","volume":"64","author":"Zucker","year":"2002","journal-title":"Annu. Rev. Physiol."},{"key":"nceadd36dbib59","doi-asserted-by":"publisher","first-page":"313","DOI":"10.1126\/science.aaa9306","article-title":"A skin-inspired organic digital mechanoreceptor","volume":"350","author":"Tee","year":"2015","journal-title":"Science"},{"key":"nceadd36dbib60","doi-asserted-by":"publisher","DOI":"10.1002\/admt.202201125","article-title":"Multifunctional 2D MoS2 optoelectronic artificial synapse with integrated arithmetic and reconfigurable logic operations for in\u2010memory neuromorphic computing applications","volume":"8","author":"Sahu","year":"2023","journal-title":"Adv. Materials Technol."},{"key":"nceadd36dbib61","doi-asserted-by":"publisher","first-page":"97","DOI":"10.1038\/nrn2315","article-title":"Regulation of spike timing in visual cortical circuits","volume":"9","author":"Tiesinga","year":"2008","journal-title":"Nat. Rev. Neurosci."},{"key":"nceadd36dbib62","doi-asserted-by":"publisher","first-page":"3689","DOI":"10.1038\/s41467-024-48103-9","article-title":"An artificial visual neuron with multiplexed rate and time-to-first-spike coding","volume":"15","author":"Li","year":"2024","journal-title":"Nat. Commun."},{"key":"nceadd36dbib63","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202300120","article-title":"Multifunctional optoelectronic synapses based on arrayed MoS2 monolayers emulating human association memory","volume":"10","author":"Huang","year":"2023","journal-title":"Adv. Sci."},{"key":"nceadd36dbib64","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2024.109267","article-title":"Multifunctional optoelectronic memristor based on CeO2\/MoS2 heterojunction for advanced artificial synapses and bionic visual system with nociceptive sensing","volume":"121","author":"Lin","year":"2024","journal-title":"Nano Energy"},{"key":"nceadd36dbib65","article-title":"Work functions of the transition metals and metal silicides","author":"Drummond","year":"1999","journal-title":"J. Appl. Phys."},{"key":"nceadd36dbib66","doi-asserted-by":"publisher","first-page":"1416","DOI":"10.1021\/nl400516a","article-title":"Electroluminescence in single layer MoS2","volume":"13","author":"Sundaram","year":"2013","journal-title":"Nano Lett."},{"key":"nceadd36dbib67","doi-asserted-by":"publisher","DOI":"10.1063\/1.4932127","article-title":"Photon upconversion with hot carriers in plasmonic systems","volume":"107","author":"Naik","year":"2015","journal-title":"Appl. Phys. Lett."},{"key":"nceadd36dbib68","doi-asserted-by":"crossref","first-page":"95","DOI":"10.1016\/j.sse.2014.06.017","article-title":"Cluster beam synthesis of metal and metal-oxide nanoparticles for emerging memories","volume":"101","author":"Verrelli","year":"2014","journal-title":"Solid-State Electron."},{"key":"nceadd36dbib69","doi-asserted-by":"publisher","first-page":"2852","DOI":"10.1021\/nl504454u","article-title":"Functionalization of transition metal dichalcogenides with metallic nanoparticles: implications for doping and gas-sensing","volume":"15","author":"Sarkar","year":"2015","journal-title":"Nano Lett."},{"key":"nceadd36dbib70","doi-asserted-by":"publisher","first-page":"0022","DOI":"10.34133\/adi.0022","article-title":"Fundamental and photodetector application of van der Waals Schottky junctions","volume":"4","author":"Wu","year":"2023","journal-title":"Adv. Devices Instrum."},{"key":"nceadd36dbib71","doi-asserted-by":"publisher","first-page":"12806","DOI":"10.1021\/acsanm.4c01222","article-title":"Photogenerated carrier separation and localized surface plasmon resonance in MoS2\/metal nanocomposites: implications for photoelectric devices","volume":"7","author":"Shi","year":"2024","journal-title":"ACS Appl. Nano Mater"},{"key":"nceadd36dbib72","doi-asserted-by":"publisher","first-page":"497","DOI":"10.1016\/j.renene.2022.06.044","article-title":"Plasmonic silver (Ag)-based photocatalysts for H2 production and CO2 conversion: review, analysis and perspectives","volume":"195","author":"Belessiotis","year":"2022","journal-title":"Renew. Energy"},{"key":"nceadd36dbib73","doi-asserted-by":"publisher","first-page":"375","DOI":"10.1016\/j.mattod.2013.09.003","article-title":"Plasmonic materials for energy: from physics to applications","volume":"16","author":"Boriskina","year":"2013","journal-title":"Mater. Today"},{"key":"nceadd36dbib74","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-019-53292-1","article-title":"Strongly confined localized surface plasmon resonance (LSPR) bands of Pt, AgPt, AgAuPt nanoparticles","volume":"9","author":"Sui","year":"2019","journal-title":"Sci. Rep."},{"key":"nceadd36dbib75","doi-asserted-by":"publisher","first-page":"2368","DOI":"10.1109\/TED.2022.3160140","article-title":"Low power stochastic neurons from SiO2-based bilayer conductive bridge memristors for probabilistic spiking neural network applications\u2014part II: modeling","volume":"69","author":"Bousoulas","year":"2022","journal-title":"IEEE Trans. Electron Devices"},{"key":"nceadd36dbib76","doi-asserted-by":"publisher","first-page":"1455","DOI":"10.1109\/TBME.2015.2496264","article-title":"A dataset for breast cancer histopathological image classification","volume":"63","author":"Spanhol","year":"2016","journal-title":"IEEE Trans. Biomed. Eng."},{"key":"nceadd36dbib77","author":"Gerstner","year":"2014"},{"key":"nceadd36dbib78","doi-asserted-by":"publisher","first-page":"1565","DOI":"10.1038\/s41467-023-37097-5","article-title":"A self-adaptive hardware with resistive switching synapses for experience-based neurocomputing","volume":"14","author":"Bianchi","year":"2023","journal-title":"Nat. Commun."},{"key":"nceadd36dbib79","doi-asserted-by":"publisher","DOI":"10.1002\/aisy.202200001","article-title":"Memristors with initial low\u2010resistive state for efficient neuromorphic systems","volume":"4","author":"Zhu","year":"2022","journal-title":"Adv. Intell. Syst."}],"container-title":["Neuromorphic Computing and Engineering"],"original-title":[],"link":[{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2634-4386\/add36d","content-type":"text\/html","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2634-4386\/add36d\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2634-4386\/add36d","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2634-4386\/add36d\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2634-4386\/add36d\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2634-4386\/add36d\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2634-4386\/add36d\/pdf","content-type":"application\/pdf","content-version":"am","intended-application":"similarity-checking"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2634-4386\/add36d\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,13]],"date-time":"2025-05-13T11:31:13Z","timestamp":1747135873000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/2634-4386\/add36d"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,5,13]]},"references-count":79,"journal-issue":{"issue":"2","published-online":{"date-parts":[[2025,5,13]]},"published-print":{"date-parts":[[2025,6,1]]}},"URL":"https:\/\/doi.org\/10.1088\/2634-4386\/add36d","relation":{},"ISSN":["2634-4386"],"issn-type":[{"value":"2634-4386","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025,5,13]]},"assertion":[{"value":"Reconfigurable optoelectronic neuromorphic properties of MoS2-based memristors decorated with Pt nanoparticles for low power spiking neural network applications","name":"article_title","label":"Article Title"},{"value":"Neuromorphic Computing and Engineering","name":"journal_title","label":"Journal Title"},{"value":"paper","name":"article_type","label":"Article Type"},{"value":"\u00a9 2025 The Author(s). Published by IOP Publishing Ltd","name":"copyright_information","label":"Copyright Information"},{"value":"2024-11-19","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2025-05-02","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2025-05-13","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}