{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,6]],"date-time":"2026-05-06T04:14:50Z","timestamp":1778040890175,"version":"3.51.4"},"reference-count":17,"publisher":"IOP Publishing","issue":"21","license":[{"start":{"date-parts":[[2010,5,13]],"date-time":"2010-05-13T00:00:00Z","timestamp":1273708800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/page\/copyright"},{"start":{"date-parts":[[2010,5,13]],"date-time":"2010-05-13T00:00:00Z","timestamp":1273708800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["J. Phys. D: Appl. Phys."],"published-print":{"date-parts":[[2010,6,2]]},"abstract":"<jats:p>Thin films of Cu<jats:sub>2<\/jats:sub>SnS<jats:sub>3<\/jats:sub> and Cu<jats:sub>3<\/jats:sub>SnS<jats:sub>4<\/jats:sub> were grown by sulfurization of dc magnetron sputtered Sn\u2013Cu metallic precursors in a S<jats:sub>2<\/jats:sub> atmosphere. Different maximum sulfurization temperatures were tested which allowed the study of the Cu<jats:sub>2<\/jats:sub>SnS<jats:sub>3<\/jats:sub> phase changes. For a temperature of 350\u2009\u00b0C the films were composed of tetragonal (<jats:italic>I<\/jats:italic>-42<jats:italic>m<\/jats:italic>) Cu<jats:sub>2<\/jats:sub>SnS<jats:sub>3<\/jats:sub>. The films sulfurized at a maximum temperature of 400\u2009\u00b0C presented a cubic (<jats:italic>F<\/jats:italic>-43<jats:italic>m<\/jats:italic>) Cu<jats:sub>2<\/jats:sub>SnS<jats:sub>3<\/jats:sub> phase. On increasing the temperature up to 520\u2009\u00b0C, the Sn content of the layer decreased and orthorhombic (<jats:italic>Pmn<\/jats:italic>21) Cu<jats:sub>3<\/jats:sub>SnS<jats:sub>4<\/jats:sub> was formed. The phase identification and structural analysis were performed using x-ray diffraction (XRD) and electron backscattered diffraction (EBSD) analysis. Raman scattering analysis was also performed and a comparison with XRD and EBSD data allowed the assignment of peaks at 336 and 351\u2009cm<jats:sup>\u22121<\/jats:sup> for tetragonal Cu<jats:sub>2<\/jats:sub>SnS<jats:sub>3<\/jats:sub>, 303 and 355\u2009cm<jats:sup>\u22121<\/jats:sup> for cubic Cu<jats:sub>2<\/jats:sub>SnS<jats:sub>3<\/jats:sub>, and 318, 348 and 295\u2009cm<jats:sup>\u22121<\/jats:sup> for the Cu<jats:sub>3<\/jats:sub>SnS<jats:sub>4<\/jats:sub> phase. Compositional analysis was done using energy dispersive spectroscopy and induced coupled plasma analysis. Scanning electron microscopy was used to study the morphology of the layers. Transmittance and reflectance measurements permitted the estimation of absorbance and band gap. These ternary compounds present a high absorbance value close to 10<jats:sup>4<\/jats:sup>\u2009cm<jats:sup>\u22121<\/jats:sup>. The estimated band gap energy was 1.35\u2009eV for tetragonal (<jats:italic>I<\/jats:italic>-42<jats:italic>m<\/jats:italic>) Cu<jats:sub>2<\/jats:sub>SnS<jats:sub>3<\/jats:sub>, 0.96\u2009eV for cubic (<jats:italic>F<\/jats:italic>-43<jats:italic>m<\/jats:italic>) Cu<jats:sub>2<\/jats:sub>SnS<jats:sub>3<\/jats:sub> and 1.60\u2009eV for orthorhombic (<jats:italic>Pmn<\/jats:italic>21) Cu<jats:sub>3<\/jats:sub>SnS<jats:sub>4<\/jats:sub>. A hot point probe was used for the determination of semiconductor conductivity type. The results show that all the samples are p-type semiconductors. A four-point probe was used to obtain the resistivity of these samples. The resistivities for tetragonal Cu<jats:sub>2<\/jats:sub>SnS<jats:sub>3<\/jats:sub>, cubic Cu<jats:sub>2<\/jats:sub>SnS<jats:sub>3<\/jats:sub> and orthorhombic (<jats:italic>Pmn<\/jats:italic>21) Cu<jats:sub>3<\/jats:sub>SnS<jats:sub>4<\/jats:sub> are 4.59 \u00d7 10<jats:sup>\u22122<\/jats:sup>\u2009\u03a9\u2009cm, 1.26 \u00d7 10<jats:sup>\u22122<\/jats:sup>\u2009\u03a9\u2009cm, 7.40 \u00d7 10<jats:sup>\u22124<\/jats:sup>\u2009\u03a9\u2009cm, respectively.<\/jats:p>","DOI":"10.1088\/0022-3727\/43\/21\/215403","type":"journal-article","created":{"date-parts":[[2010,5,14]],"date-time":"2010-05-14T03:13:46Z","timestamp":1273806826000},"page":"215403","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":455,"title":["A study of ternary Cu<sub>2<\/sub>SnS<sub>3<\/sub> and Cu<sub>3<\/sub>SnS<sub>4<\/sub> thin films prepared by sulfurizing stacked metal precursors"],"prefix":"10.1088","volume":"43","author":[{"given":"P A","family":"Fernandes","sequence":"first","affiliation":[]},{"given":"P M P","family":"Salom\u00e9","sequence":"additional","affiliation":[]},{"given":"A F da","family":"Cunha","sequence":"additional","affiliation":[]}],"member":"266","published-online":{"date-parts":[[2010,5,13]]},"reference":[{"key":"jphysd348175bib01","doi-asserted-by":"publisher","first-page":"041201","DOI":"10.1143\/APEX.1.041201","volume":"1","year":"2008","journal-title":"Appl. Phys. Express"},{"key":"jphysd348175bib02","doi-asserted-by":"publisher","first-page":"235","DOI":"10.1002\/pip.822","volume":"16","year":"2008","journal-title":"Prog. Photovolt: Res. Appl."},{"key":"jphysd348175bib03","doi-asserted-by":"publisher","first-page":"1245","DOI":"10.1002\/pssc.200881231","volume":"6","year":"2009","journal-title":"Phys. Status Solidi"},{"key":"jphysd348175bib04","doi-asserted-by":"publisher","first-page":"2519","DOI":"10.1016\/j.tsf.2008.11.031","volume":"517","year":"2009","journal-title":"Thin Solid Films"},{"key":"jphysd348175bib05","doi-asserted-by":"publisher","first-page":"170","DOI":"10.1006\/jssc.2000.8772","volume":"153","year":"2000","journal-title":"J. Solid State Chem."},{"key":"jphysd348175bib06","doi-asserted-by":"publisher","first-page":"1563","DOI":"10.1016\/S0025-5408(00)00347-0","volume":"35","year":"2000","journal-title":"Mater. Res. Bull."},{"key":"jphysd348175bib07","doi-asserted-by":"publisher","first-page":"144","DOI":"10.1006\/jssc.1998.7822","volume":"139","year":"1998","journal-title":"J. Solid State Chem."},{"key":"jphysd348175bib08","doi-asserted-by":"publisher","first-page":"226","DOI":"10.1016\/j.jcrysgro.2005.07.004","volume":"284","year":"2005","journal-title":"J. Cryst. Growth"},{"key":"jphysd348175bib09","doi-asserted-by":"publisher","first-page":"2953","DOI":"10.1021\/ic0200242","volume":"41","year":"2002","journal-title":"Inorg. Chem."},{"key":"jphysd348175bib10","doi-asserted-by":"publisher","first-page":"2527","DOI":"10.1016\/j.tsf.2008.11.039","volume":"517","year":"2009","journal-title":"Thin Solid Films"},{"key":"jphysd348175bib11","doi-asserted-by":"publisher","first-page":"3354","DOI":"10.1002\/pssa.200723086","volume":"204","year":"2007","journal-title":"Phys. Status Solidi"},{"key":"jphysd348175bib12","doi-asserted-by":"publisher","first-page":"105013","DOI":"10.1088\/0268-1242\/24\/10\/105013","volume":"24","year":"2009","journal-title":"Semicond. Sci. Technol."},{"key":"jphysd348175bib13","first-page":"P4B.10"},{"key":"jphysd348175bib14"},{"key":"jphysd348175bib15","doi-asserted-by":"publisher","first-page":"621","DOI":"10.1080\/01418619808224072","volume":"77","year":"1998","journal-title":"Phil. Mag."},{"key":"jphysd348175bib16","first-page":"34","year":"1975"},{"key":"jphysd348175bib17","doi-asserted-by":"publisher","first-page":"135","DOI":"10.1016\/j.snb.2008.02.015","volume":"133","year":"2008","journal-title":"Sensors Actuators B-Chem."}],"container-title":["Journal of Physics D: Applied Physics"],"original-title":[],"link":[{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/0022-3727\/43\/21\/215403","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/0022-3727\/43\/21\/215403\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/0022-3727\/43\/21\/215403\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/0022-3727\/43\/21\/215403\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,2,7]],"date-time":"2023-02-07T22:49:59Z","timestamp":1675810199000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/0022-3727\/43\/21\/215403"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,5,13]]},"references-count":17,"journal-issue":{"issue":"21","published-online":{"date-parts":[[2010,5,13]]},"published-print":{"date-parts":[[2010,6,2]]}},"URL":"https:\/\/doi.org\/10.1088\/0022-3727\/43\/21\/215403","relation":{},"ISSN":["0022-3727","1361-6463"],"issn-type":[{"value":"0022-3727","type":"print"},{"value":"1361-6463","type":"electronic"}],"subject":[],"published":{"date-parts":[[2010,5,13]]},"assertion":[{"value":"A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursors","name":"article_title","label":"Article Title"},{"value":"Journal of Physics D: Applied Physics","name":"journal_title","label":"Journal Title"},{"value":"paper","name":"article_type","label":"Article Type"},{"value":"2010 IOP Publishing Ltd","name":"copyright_information","label":"Copyright Information"},{"value":"2010-02-19","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2010-05-13","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}