{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T09:17:01Z","timestamp":1740129421645,"version":"3.37.3"},"reference-count":24,"publisher":"IOP Publishing","issue":"33","license":[{"start":{"date-parts":[[2010,8,3]],"date-time":"2010-08-03T00:00:00Z","timestamp":1280793600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/page\/copyright"},{"start":{"date-parts":[[2010,8,3]],"date-time":"2010-08-03T00:00:00Z","timestamp":1280793600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["J. Phys. D: Appl. Phys."],"published-print":{"date-parts":[[2010,8,25]]},"abstract":"<jats:p>This work reports on the fabrication of Schottky barrier based Mg-doped (In,Ga)N layers for fluorescence applications. Mg acceptors are used in order to compensate surface and bulk donors that prevent the fabrication of Schottky contacts on unintentionally doped (In,Ga)N layers grown by plasma-assisted molecular beam epitaxy (PA-MBE). Rectifying properties of the contacts exhibited a major improvement when (In,Ga)N\u2009:\u2009Mg was used. The electrical and optical measurements of the layers showed a hole concentration of up to 3 \u00d7 10<jats:sup>19<\/jats:sup>\u2009holes\u2009cm<jats:sup>\u22123<\/jats:sup> with a Mg acceptor activation energy of \u223c60\u2009meV. Back-illuminated photodiodes fabricated on 800\u2009nm thick Mg-doped In<jats:sub>0.18<\/jats:sub>Ga<jats:sub>0.82<\/jats:sub>N layers exhibited a band pass photo-response with a rejection ratio &gt;10<jats:sup>2<\/jats:sup> between 420 and 470\u2009nm and peak responsivities of 87\u2009mA\u2009W<jats:sup>\u22121<\/jats:sup> at \u223c470\u2009nm. The suitability of these photodiodes for fluorescence measurements was demonstrated.<\/jats:p>","DOI":"10.1088\/0022-3727\/43\/33\/335101","type":"journal-article","created":{"date-parts":[[2010,8,4]],"date-time":"2010-08-04T03:13:24Z","timestamp":1280891604000},"page":"335101","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":5,"title":["Mg doping of InGaN layers grown by PA-MBE for the fabrication of Schottky barrier photodiodes"],"prefix":"10.1088","volume":"43","author":[{"given":"J","family":"Pereiro","sequence":"first","affiliation":[]},{"given":"A","family":"Redondo-Cubero","sequence":"additional","affiliation":[]},{"given":"S","family":"Fernandez-Garrido","sequence":"additional","affiliation":[]},{"given":"C","family":"Rivera","sequence":"additional","affiliation":[]},{"given":"A","family":"Navarro","sequence":"additional","affiliation":[]},{"given":"E","family":"Mu\u00f1oz","sequence":"additional","affiliation":[]},{"given":"E","family":"Calleja","sequence":"additional","affiliation":[]},{"given":"R","family":"Gago","sequence":"additional","affiliation":[]}],"member":"266","published-online":{"date-parts":[[2010,8,3]]},"reference":[{"key":"jphysd349174bib01","doi-asserted-by":"publisher","first-page":"2859","DOI":"10.1002\/pssb.200675618","article-title":"(Al,In,Ga)N-based photodetectors. 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