{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,29]],"date-time":"2025-11-29T16:13:24Z","timestamp":1764432804801,"version":"3.37.3"},"reference-count":42,"publisher":"IOP Publishing","issue":"29","license":[{"start":{"date-parts":[[2011,6,30]],"date-time":"2011-06-30T00:00:00Z","timestamp":1309392000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/page\/copyright"},{"start":{"date-parts":[[2011,6,30]],"date-time":"2011-06-30T00:00:00Z","timestamp":1309392000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["J. Phys. D: Appl. Phys."],"published-print":{"date-parts":[[2011,7,27]]},"abstract":"<jats:p>In this work, the damage formation in InN layers has been investigated subsequent to europium implantation at 300\u2009keV and room temperature. The layers of several micrometres were produced by hydride vapour phase epitaxy and used as matrices for ion implantation experiments due to their good crystalline quality. From this investigation, it is shown that InN exhibits a low stability under rare earth ion implantation. Starting at a low fluence of around 5 \u00d7 10<jats:sup>12<\/jats:sup>\u2009Eu\u2009cm<jats:sup>\u22122<\/jats:sup>, an extensive modification of the surface layer takes place. The dissociation of InN and the presence of misoriented nanograins are observed in the damaged area. Analysis by electron diffraction indicates that the nanograins correspond to indium oxide In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub>.<\/jats:p>","DOI":"10.1088\/0022-3727\/44\/29\/295402","type":"journal-article","created":{"date-parts":[[2011,7,1]],"date-time":"2011-07-01T03:59:49Z","timestamp":1309492789000},"page":"295402","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":16,"title":["The high sensitivity of InN under rare earth ion implantation at medium range energy"],"prefix":"10.1088","volume":"44","author":[{"given":"B","family":"Lacroix","sequence":"first","affiliation":[]},{"given":"M P","family":"Chauvat","sequence":"additional","affiliation":[]},{"given":"P","family":"Ruterana","sequence":"additional","affiliation":[]},{"given":"K","family":"Lorenz","sequence":"additional","affiliation":[]},{"given":"E","family":"Alves","sequence":"additional","affiliation":[]},{"given":"A","family":"Syrkin","sequence":"additional","affiliation":[]}],"member":"266","published-online":{"date-parts":[[2011,6,30]]},"reference":[{"year":"2000","key":"jphysd386800bib01","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-662-04156-7"},{"volume":"3","year":"2008","key":"jphysd386800bib02"},{"key":"jphysd386800bib03","doi-asserted-by":"publisher","first-page":"55","DOI":"10.1016\/S0927-796X(00)00028-0","volume":"30","year":"2000","journal-title":"Mater. Sci. Eng."},{"key":"jphysd386800bib04","doi-asserted-by":"publisher","first-page":"2244","DOI":"10.1063\/1.1797563","volume":"85","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"jphysd386800bib05","doi-asserted-by":"publisher","first-page":"7510","DOI":"10.1103\/PhysRevB.62.7510","volume":"62","year":"2000","journal-title":"Phys. Rev."},{"key":"jphysd386800bib06","doi-asserted-by":"publisher","first-page":"165103","DOI":"10.1088\/0022-3727\/42\/16\/165103","volume":"42","year":"2009","journal-title":"J. Phys. D Appl. Phys."},{"key":"jphysd386800bib07","doi-asserted-by":"publisher","first-page":"51","DOI":"10.1016\/S0927-796X(01)00028-6","volume":"33","year":"2001","journal-title":"Mater. Sci. Eng."},{"key":"jphysd386800bib08","doi-asserted-by":"publisher","first-page":"511","DOI":"10.1016\/S1369-8001(02)00070-7","volume":"5","year":"2003","journal-title":"Mater. Sci. Semicond. Process."},{"key":"jphysd386800bib09","doi-asserted-by":"publisher","first-page":"83514","DOI":"10.1063\/1.3106606","volume":"105","year":"2009","journal-title":"J. Appl. Phys."},{"key":"jphysd386800bib10","doi-asserted-by":"publisher","first-page":"073520","DOI":"10.1063\/1.2357845","volume":"100","year":"2006","journal-title":"J. Appl. Phys."},{"key":"jphysd386800bib11","doi-asserted-by":"publisher","first-page":"013506","DOI":"10.1063\/1.3527944","volume":"109","year":"2011","journal-title":"J. Appl. Phys."},{"key":"jphysd386800bib12","doi-asserted-by":"publisher","first-page":"023525","DOI":"10.1063\/1.3291100","volume":"107","year":"2010","journal-title":"J. Appl. Phys."},{"key":"jphysd386800bib13","doi-asserted-by":"publisher","first-page":"R4","DOI":"10.1002\/1521-3951(200204)230:2<R4::AID-PSSB99994>3.0.CO;2-Z","volume":"230","year":"2002","journal-title":"Phys. Status Solidi"},{"key":"jphysd386800bib14","doi-asserted-by":"publisher","first-page":"787","DOI":"10.1002\/1521-3951(200212)234:3<787::AID-PSSB787>3.0.CO;2-H","volume":"234","year":"2002","journal-title":"Phys. Status Solidi"},{"key":"jphysd386800bib15","first-page":"023540","volume":"103","year":"2008","journal-title":"J. Appl. Phys."},{"key":"jphysd386800bib16","doi-asserted-by":"publisher","first-page":"158","DOI":"10.1002\/pssa.200563518","volume":"203","year":"2006","journal-title":"Phys. Status Solidi"},{"key":"jphysd386800bib17","doi-asserted-by":"publisher","first-page":"151913","DOI":"10.1063\/1.2195642","volume":"88","year":"2006","journal-title":"Appl. Phys. Lett."},{"key":"jphysd386800bib18","doi-asserted-by":"publisher","first-page":"1301","DOI":"10.1002\/pssc.200983123","volume":"7","year":"2010","journal-title":"Phys. Status Solidi"},{"year":"1985","key":"jphysd386800bib19"},{"key":"jphysd386800bib20","doi-asserted-by":"publisher","first-page":"5587","DOI":"10.1103\/PhysRevB.61.5587","volume":"61","year":"2000","journal-title":"Phys. Rev."},{"key":"jphysd386800bib21","doi-asserted-by":"publisher","first-page":"10301","DOI":"10.1088\/0953-8984\/12\/49\/332","volume":"12","year":"2000","journal-title":"J. Phys.: Condens. Matter"},{"key":"jphysd386800bib22","doi-asserted-by":"publisher","first-page":"266","DOI":"10.1007\/s11664-998-0398-3","volume":"27","year":"1998","journal-title":"J. Electron. Mater."},{"key":"jphysd386800bib23","doi-asserted-by":"publisher","first-page":"694","DOI":"10.1063\/1.122990","volume":"74","year":"1999","journal-title":"Appl. Phys. Lett."},{"key":"jphysd386800bib24","doi-asserted-by":"publisher","first-page":"50","DOI":"10.1016\/j.jcrysgro.2004.05.033","volume":"269","year":"2004","journal-title":"J. Cryst. Growth"},{"key":"jphysd386800bib25","doi-asserted-by":"publisher","first-page":"131","DOI":"10.1016\/0304-3991(87)90080-5","volume":"21","year":"1987","journal-title":"Ultramicroscopy"},{"key":"jphysd386800bib26","doi-asserted-by":"publisher","first-page":"58","DOI":"10.1016\/S0921-4526(01)00650-0","volume":"308\u2013310","year":"2001","journal-title":"Physica B: Condens. Matter"},{"key":"jphysd386800bib27","doi-asserted-by":"publisher","first-page":"859","DOI":"10.1063\/1.1543642","volume":"82","year":"2003","journal-title":"Appl. Phys. Lett."},{"key":"jphysd386800bib28","doi-asserted-by":"publisher","first-page":"486","DOI":"10.1016\/j.nimb.2003.08.039","volume":"215","year":"2004","journal-title":"Nucl. Instrum. Methods"},{"key":"jphysd386800bib29","doi-asserted-by":"publisher","first-page":"291","DOI":"10.1016\/j.nimb.2005.01.022","volume":"234","year":"2005","journal-title":"Nucl. Instrum. Methods"},{"key":"jphysd386800bib30","doi-asserted-by":"publisher","first-page":"7969","DOI":"10.1063\/1.353906","volume":"73","year":"1993","journal-title":"J. Appl. Phys."},{"year":"1983\u20131984","key":"jphysd386800bib31"},{"key":"jphysd386800bib32","doi-asserted-by":"publisher","first-page":"8","DOI":"10.1016\/S0921-5093(98)00705-9","volume":"253","year":"1998","journal-title":"Mater. Sci. Eng."},{"key":"jphysd386800bib33","doi-asserted-by":"publisher","first-page":"3048","DOI":"10.1063\/1.1649459","volume":"95","year":"2004","journal-title":"J. Appl. Phys."},{"key":"jphysd386800bib34","doi-asserted-by":"publisher","first-page":"68","DOI":"10.1002\/pssa.200776708","volume":"205","year":"2008","journal-title":"Phys. Status Solidi"},{"year":"1989","key":"jphysd386800bib35"},{"key":"jphysd386800bib36","doi-asserted-by":"publisher","first-page":"2745","DOI":"10.1088\/0953-8984\/9\/13\/012","volume":"9","year":"1997","journal-title":"J. Phys. Condens. Matter"},{"key":"jphysd386800bib37","doi-asserted-by":"publisher","first-page":"045208","DOI":"10.1103\/PhysRevB.64.045208","volume":"64","year":"2001","journal-title":"Phys. Rev."},{"year":"1967","key":"jphysd386800bib38"},{"key":"jphysd386800bib39","doi-asserted-by":"publisher","first-page":"2779","DOI":"10.1063\/1.1595135","volume":"94","year":"2003","journal-title":"J. Appl. Phys."},{"key":"jphysd386800bib40","doi-asserted-by":"publisher","first-page":"16612","DOI":"10.1103\/PhysRevB.62.16612","volume":"62","year":"2000","journal-title":"Phys. Rev."},{"key":"jphysd386800bib41","doi-asserted-by":"publisher","first-page":"17","DOI":"10.1016\/0022-5088(64)90013-X","volume":"7","year":"1964","journal-title":"J. Less Common Met."},{"key":"jphysd386800bib42","doi-asserted-by":"publisher","first-page":"155107","DOI":"10.1103\/PhysRevB.77.155107","volume":"77","year":"2008","journal-title":"Phys. Rev."}],"container-title":["Journal of Physics D: Applied Physics"],"original-title":[],"link":[{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/0022-3727\/44\/29\/295402","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/0022-3727\/44\/29\/295402\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/0022-3727\/44\/29\/295402\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/0022-3727\/44\/29\/295402\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,2,7]],"date-time":"2023-02-07T18:16:29Z","timestamp":1675793789000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/0022-3727\/44\/29\/295402"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,6,30]]},"references-count":42,"journal-issue":{"issue":"29","published-online":{"date-parts":[[2011,6,30]]},"published-print":{"date-parts":[[2011,7,27]]}},"URL":"https:\/\/doi.org\/10.1088\/0022-3727\/44\/29\/295402","relation":{},"ISSN":["0022-3727","1361-6463"],"issn-type":[{"type":"print","value":"0022-3727"},{"type":"electronic","value":"1361-6463"}],"subject":[],"published":{"date-parts":[[2011,6,30]]},"assertion":[{"value":"The high sensitivity of InN under rare earth ion implantation at medium range energy","name":"article_title","label":"Article Title"},{"value":"Journal of Physics D: Applied Physics","name":"journal_title","label":"Journal Title"},{"value":"paper","name":"article_type","label":"Article Type"},{"value":"2011 IOP Publishing Ltd","name":"copyright_information","label":"Copyright Information"},{"value":"2011-03-03","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2011-06-30","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}