{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,23]],"date-time":"2026-03-23T11:43:58Z","timestamp":1774266238295,"version":"3.50.1"},"reference-count":13,"publisher":"IOP Publishing","issue":"17","license":[{"start":{"date-parts":[[2012,4,5]],"date-time":"2012-04-05T00:00:00Z","timestamp":1333584000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/page\/copyright"},{"start":{"date-parts":[[2012,4,5]],"date-time":"2012-04-05T00:00:00Z","timestamp":1333584000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["J. Phys. D: Appl. Phys."],"published-print":{"date-parts":[[2012,5,2]]},"abstract":"<jats:title>Abstract<\/jats:title>\n               <jats:p>The influence of deposition methods and type of metal contacts on the defects generated at the metal\/semiconductor interface has been investigated. Photoluminesccence spectra at a low temperature demonstrated that the Au electroless deposition samples exhibit the lowest <jats:italic>I<\/jats:italic>\n                  <jats:sub>(D<jats:sup>0<\/jats:sup>,X)<\/jats:sub>\/<jats:italic>I<\/jats:italic>\n                  <jats:sub>A-center<\/jats:sub> ratio and have the best gamma response. Rutherford backscattering spectrometry results show that the sputtering method creates the highest concentration of TeO<jats:sub>2<\/jats:sub> layer compared with the evaporation and electroless deposition methods. The electroless Au has more inter-diffusion between the contact and the CZT material than either sputtering or evaporation methods. The electroless Pt and Ru depositions, however, exhibit lower inter-diffusion. The contacts deposited by electroless and evaporation present more quasi-ohmic behaviour and better gamma response than those fabricated by sputtering.<\/jats:p>","DOI":"10.1088\/0022-3727\/45\/17\/175102","type":"journal-article","created":{"date-parts":[[2012,4,5]],"date-time":"2012-04-05T13:13:32Z","timestamp":1333631612000},"page":"175102","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":18,"title":["Investigation of generation of defects due to metallization on CdZnTe detectors"],"prefix":"10.1088","volume":"45","author":[{"given":"Q","family":"Zheng","sequence":"first","affiliation":[]},{"given":"F","family":"Dierre","sequence":"additional","affiliation":[]},{"given":"J","family":"Franc","sequence":"additional","affiliation":[]},{"given":"J","family":"Crocco","sequence":"additional","affiliation":[]},{"given":"H","family":"Bensalah","sequence":"additional","affiliation":[]},{"given":"V","family":"Corregidor","sequence":"additional","affiliation":[]},{"given":"E","family":"Alves","sequence":"additional","affiliation":[]},{"given":"E","family":"Ruiz","sequence":"additional","affiliation":[]},{"given":"O","family":"Vela","sequence":"additional","affiliation":[]},{"given":"J M","family":"Perez","sequence":"additional","affiliation":[]},{"given":"E","family":"Dieguez","sequence":"additional","affiliation":[]}],"member":"266","published-online":{"date-parts":[[2012,4,5]]},"reference":[{"key":"jphysd416273bib01","doi-asserted-by":"publisher","first-page":"934","DOI":"10.1109\/23.603780","article-title":"Investigation of electrical contacts for Cd1\u2212xZnxTe nuclear radiation detectors","volume":"44","author":"Burger","year":"1997","journal-title":"IEEE Trans. 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