{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,18]],"date-time":"2026-01-18T07:34:47Z","timestamp":1768721687754,"version":"3.49.0"},"reference-count":41,"publisher":"IOP Publishing","issue":"9","license":[{"start":{"date-parts":[[2016,2,3]],"date-time":"2016-02-03T00:00:00Z","timestamp":1454457600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"},{"start":{"date-parts":[[2016,2,3]],"date-time":"2016-02-03T00:00:00Z","timestamp":1454457600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"funder":[{"DOI":"10.13039\/501100000266","name":"Engineering and Physical Sciences Research Council","doi-asserted-by":"publisher","award":["EP\/I00419X\/1"],"award-info":[{"award-number":["EP\/I00419X\/1"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":true},"short-container-title":["J. Phys. D: Appl. Phys."],"published-print":{"date-parts":[[2016,3,9]]},"DOI":"10.1088\/0022-3727\/49\/9\/095111","type":"journal-article","created":{"date-parts":[[2016,2,3]],"date-time":"2016-02-03T11:13:19Z","timestamp":1454497999000},"page":"095111","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":56,"title":["Stability, bistability and instability of amorphous ZrO<sub>2<\/sub>resistive memory devices"],"prefix":"10.1088","volume":"49","author":[{"given":"P","family":"Parreira","sequence":"first","affiliation":[]},{"given":"G W","family":"Paterson","sequence":"additional","affiliation":[]},{"given":"S","family":"McVitie","sequence":"additional","affiliation":[]},{"given":"D A","family":"MacLaren","sequence":"additional","affiliation":[]}],"member":"266","published-online":{"date-parts":[[2016,2,3]]},"reference":[{"key":"1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.200900375"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1038\/nature06932"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2012.240"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2012.2190369"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4614-9068-5"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201204097"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1021\/nl4015638"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201001872"},{"key":"9","volume":"46","author":"Wang J-C","year":"2013","journal-title":"J. Phys. D: Appl. Phys.","ISSN":"https:\/\/id.crossref.org\/issn\/0022-3727","issn-type":"print"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201103379"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4419-9931-3_13"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2011.10.001"},{"key":"13","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2012.01.005"},{"key":"14","doi-asserted-by":"publisher","DOI":"10.1016\/j.matchemphys.2012.12.029"},{"key":"15","first-page":"729","author":"Govoreanu B","year":"2011","journal-title":"Technical Digest \u2013 Int. Electron Devices Meeting, IEDM"},{"key":"16","doi-asserted-by":"publisher","DOI":"10.1063\/1.4765342"},{"key":"17","doi-asserted-by":"crossref","DOI":"10.1088\/0022-3727\/47\/14\/145102","volume":"47","author":"Salaoru I","year":"2014","journal-title":"J. Phys. D: Appl. Phys.","ISSN":"https:\/\/id.crossref.org\/issn\/0022-3727","issn-type":"print"},{"key":"18","doi-asserted-by":"publisher","DOI":"10.1007\/s00339-012-7232-8"},{"key":"19","doi-asserted-by":"publisher","DOI":"10.1063\/1.3497077"},{"key":"20","doi-asserted-by":"publisher","DOI":"10.1038\/nmat1814"},{"key":"21","doi-asserted-by":"publisher","DOI":"10.1063\/1.3697691"},{"key":"22","doi-asserted-by":"publisher","DOI":"10.1016\/S0968-4328(99)00005-0"},{"key":"23","doi-asserted-by":"publisher","DOI":"10.1016\/0304-3991(91)90108-I"},{"key":"24","doi-asserted-by":"publisher","DOI":"10.1016\/j.ultramic.2008.05.006"},{"key":"25","doi-asserted-by":"publisher","DOI":"10.1002\/pssc.201400123"},{"key":"26","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2009.456"},{"key":"27","doi-asserted-by":"publisher","DOI":"10.1016\/0039-6028(93)90725-Y"},{"key":"28","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.70.045106"},{"key":"29","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.26.614"},{"key":"30","doi-asserted-by":"publisher","DOI":"10.1016\/j.ultramic.2006.03.006"},{"key":"31","doi-asserted-by":"publisher","DOI":"10.1063\/1.2767380"},{"key":"32","doi-asserted-by":"publisher","DOI":"10.1063\/1.3039809"},{"key":"33","doi-asserted-by":"publisher","DOI":"10.1063\/1.2430912"},{"key":"34","doi-asserted-by":"publisher","DOI":"10.1063\/1.4821900"},{"key":"35","doi-asserted-by":"publisher","DOI":"10.1063\/1.3467461"},{"key":"36","doi-asserted-by":"publisher","DOI":"10.1016\/S1369-7021(08)70119-6"},{"key":"37","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.77.035105"},{"key":"38","volume":"21","author":"Wang S-Y","year":"2010","journal-title":"Nanotechnology","ISSN":"https:\/\/id.crossref.org\/issn\/0957-4484","issn-type":"print"},{"key":"39","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2012.10.070"},{"key":"40","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2007.894652"},{"key":"41","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2009.10.034"}],"container-title":["Journal of Physics D: Applied Physics"],"original-title":[],"link":[{"URL":"http:\/\/stacks.iop.org\/0022-3727\/49\/i=9\/a=095111\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/stacks.iop.org\/0022-3727\/49\/i=9\/a=095111?key=crossref.7cc68796f5efa07b0d30bda9861fa797","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/stacks.iop.org\/0022-3727\/49\/i=9\/a=095111\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,4,11]],"date-time":"2020-04-11T09:36:46Z","timestamp":1586597806000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/0022-3727\/49\/9\/095111"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,2,3]]},"references-count":41,"journal-issue":{"issue":"9","published-print":{"date-parts":[[2016,3,9]]}},"URL":"https:\/\/doi.org\/10.1088\/0022-3727\/49\/9\/095111","relation":{},"ISSN":["0022-3727","1361-6463"],"issn-type":[{"value":"0022-3727","type":"print"},{"value":"1361-6463","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,2,3]]},"assertion":[{"value":"Journal of Physics D: Applied Physics","name":"journal_title","label":"Journal title"},{"value":"paper","name":"article_type","label":"Article type"},{"value":"Stability, bistability and instability of amorphous ZrO2resistive memory devices","name":"article_title","label":"Article title"},{"value":"\u00a9 2016 IOP Publishing Ltd","name":"copyright_information","label":"Copyright information"},{"value":"cc-by Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.","name":"license_information","label":"License information"},{"value":"2015-09-01","name":"date_received","label":"Date received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2015-12-16","name":"date_accepted","label":"Date accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2016-02-03","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}