{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,19]],"date-time":"2025-10-19T15:42:35Z","timestamp":1760888555567},"reference-count":0,"publisher":"IOP Publishing","issue":"7","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Semicond. Sci. Technol."],"published-print":{"date-parts":[[2011,7,1]]},"DOI":"10.1088\/0268-1242\/26\/7\/075017","type":"journal-article","created":{"date-parts":[[2011,4,16]],"date-time":"2011-04-16T07:32:46Z","timestamp":1302939166000},"page":"075017","source":"Crossref","is-referenced-by-count":9,"title":["The influence of argon pressure and RF power on the growth of InP thin films"],"prefix":"10.1088","volume":"26","author":[{"given":"G Hema","family":"Chandra","sequence":"first","affiliation":[]},{"given":"J P\u00e9rez","family":"de la Cruz","sequence":"additional","affiliation":[]},{"given":"J","family":"Ventura","sequence":"additional","affiliation":[]}],"member":"266","published-online":{"date-parts":[[2011,4,15]]},"container-title":["Semiconductor Science and Technology"],"original-title":[],"deposited":{"date-parts":[[2020,4,10]],"date-time":"2020-04-10T22:18:01Z","timestamp":1586557081000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1088\/0268-1242\/26\/7\/075017"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,4,15]]},"references-count":0,"journal-issue":{"issue":"7","published-print":{"date-parts":[[2011,7,7]]}},"alternative-id":["S0268-1242(11)81669-X"],"URL":"https:\/\/doi.org\/10.1088\/0268-1242\/26\/7\/075017","relation":{},"ISSN":["0268-1242","1361-6641"],"issn-type":[{"value":"0268-1242","type":"print"},{"value":"1361-6641","type":"electronic"}],"subject":[],"published":{"date-parts":[[2011,4,15]]}}}