{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,23]],"date-time":"2026-03-23T18:00:47Z","timestamp":1774288847344,"version":"3.50.1"},"reference-count":41,"publisher":"IOP Publishing","issue":"32","license":[{"start":{"date-parts":[[2017,7,18]],"date-time":"2017-07-18T00:00:00Z","timestamp":1500336000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/page\/copyright"},{"start":{"date-parts":[[2017,7,18]],"date-time":"2017-07-18T00:00:00Z","timestamp":1500336000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["J. Phys. D: Appl. Phys."],"published-print":{"date-parts":[[2017,8,16]]},"abstract":"<jats:title>Abstract<\/jats:title>\n               <jats:p>\n                  <jats:italic>\u03b2<\/jats:italic>-Ga<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> bulk single crystals were doped by ion implantation at temperatures from room temperature to 1000 \u00b0C, using a 300\u2009keV Europium beam with a fluence of 1\u2009\u2009\u00d7\u2009\u200910<jats:sup>15<\/jats:sup> at cm<jats:sup>\u22122<\/jats:sup>. Rising the implantation temperature from room temperature to 400\u2013600 \u00b0C resulted in a significant increase of the substitutional Eu fraction and of the number of Eu ions in the 3+\u2009\u2009charge state as well as in a considerable decrease of implantation damage. Eu is found in both charge states 2+\u2009\u2009and 3+\u2009\u2009and their relative fractions are critically dependent on the implantation and annealing temperature, suggesting that defects play an important role in stabilizing one of the charge states. The damage recovery during post-implant annealing is a complex process and typically defect levels first increase for intermediate annealing temperatures and a significant recovery of the crystal only starts around 1000 \u00b0C. Cathodoluminescence spectra are dominated by the sharp Eu<jats:sup>3+<\/jats:sup> related intra-ionic 4f transition lines in the red spectral region. They show a strong increase of the emission intensity with increasing annealing temperature, in particular for samples implanted at elevated temperature, indicating the optical activation of Eu<jats:sup>3+<\/jats:sup> ions. However, no direct correlation of emission intensity and Eu<jats:sup>3+<\/jats:sup> fraction was found, again pointing to the important role of defects on the physical properties of these luminescent materials.<\/jats:p>","DOI":"10.1088\/1361-6463\/aa79dc","type":"journal-article","created":{"date-parts":[[2017,6,15]],"date-time":"2017-06-15T21:14:21Z","timestamp":1497561261000},"page":"325101","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":39,"title":["Doping \u03b2-Ga<sub>2<\/sub>O<sub>3<\/sub> with europium: influence of the implantation and annealing temperature"],"prefix":"10.1088","volume":"50","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-6774-8492","authenticated-orcid":false,"given":"M","family":"Peres","sequence":"first","affiliation":[]},{"given":"K","family":"Lorenz","sequence":"additional","affiliation":[]},{"given":"E","family":"Alves","sequence":"additional","affiliation":[]},{"given":"E","family":"Nogales","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6289-7437","authenticated-orcid":false,"given":"B","family":"M\u00e9ndez","sequence":"additional","affiliation":[]},{"given":"X","family":"Biquard","sequence":"additional","affiliation":[]},{"given":"B","family":"Daudin","sequence":"additional","affiliation":[]},{"given":"E G","family":"V\u00edllora","sequence":"additional","affiliation":[]},{"given":"K","family":"Shimamura","sequence":"additional","affiliation":[]}],"member":"266","published-online":{"date-parts":[[2017,7,18]]},"reference":[{"key":"daa79dcbib001","doi-asserted-by":"publisher","DOI":"10.1117\/12.2039305","article-title":"\u03b2-Ga2O3 and single-crystal phosphors for high-brightness white LEDs and LDs, and \u03b2-Ga2O3 potential for next generation of power devices","volume":"8987","author":"V\u00edllora","year":"2014","journal-title":"Proc. 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