{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,28]],"date-time":"2026-02-28T13:07:57Z","timestamp":1772284077200,"version":"3.50.1"},"reference-count":34,"publisher":"IOP Publishing","issue":"43","license":[{"start":{"date-parts":[[2019,8,9]],"date-time":"2019-08-09T00:00:00Z","timestamp":1565308800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/publishingsupport.iopscience.iop.org\/iop-standard\/v1"},{"start":{"date-parts":[[2019,8,9]],"date-time":"2019-08-09T00:00:00Z","timestamp":1565308800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["Nanotechnology"],"published-print":{"date-parts":[[2019,10,25]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    Here, the ability of using p-type tin oxide (SnO\n                    <jats:sub>\n                      <jats:italic>x<\/jats:italic>\n                    <\/jats:sub>\n                    ) thin films as a thermal sensor has been investigated. Firstly, the thermoelectric performance was optimized by controlling the thickness of the SnO\n                    <jats:sub>\n                      <jats:italic>x<\/jats:italic>\n                    <\/jats:sub>\n                    film from 60 up to 160 nm. A high Seebeck coefficient of +263\n                    <jats:italic>\u03bc<\/jats:italic>\n                    V K\n                    <jats:sup>\u22121<\/jats:sup>\n                    and electrical conductivity of 4.1\u00a0\u00d7\u00a010\n                    <jats:sup>2<\/jats:sup>\n                    (S m\n                    <jats:sup>\u22121<\/jats:sup>\n                    ) were achieved in a 60 nm thick SnO\n                    <jats:sub>\n                      <jats:italic>x<\/jats:italic>\n                    <\/jats:sub>\n                    film, due to a compact nanostructured film and the absence of the Sn metallic phase, which was observed for the thicker SnO\n                    <jats:sub>\n                      <jats:italic>x<\/jats:italic>\n                    <\/jats:sub>\n                    film leading to a typical thermoelectric transport properties of a n-type Sn film. Moreover, x-ray photoelectron spectroscopy revealed the co-existence of SnO (79.7%) and SnO\n                    <jats:sub>2<\/jats:sub>\n                    (20.3%) phases in the 60 nm thick SnO\n                    <jats:italic>\n                      <jats:sub>x<\/jats:sub>\n                    <\/jats:italic>\n                    film, while the optical measurements revealed an indirect gap of 1.8 eV and a direct gap of 2.7 eV, respectively. The 60 nm-SnO\n                    <jats:sub>\n                      <jats:italic>x<\/jats:italic>\n                    <\/jats:sub>\n                    thin film have been tested as a thermoelectric touch sensor, achieving a\n                    <jats:italic>\n                      V\n                      <jats:sub>signal<\/jats:sub>\n                    <\/jats:italic>\n                    \/\n                    <jats:italic>\n                      V\n                      <jats:sub>noise<\/jats:sub>\n                    <\/jats:italic>\n                    \u00a0\u2248\u00a020, with a rise time &lt;1 s. Therefore, this work provides an efficient way for developing highly efficient thermal sensors with potential use in display technologies.\n                  <\/jats:p>","DOI":"10.1088\/1361-6528\/ab33dd","type":"journal-article","created":{"date-parts":[[2019,7,19]],"date-time":"2019-07-19T18:45:59Z","timestamp":1563561959000},"page":"435502","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":22,"title":["Highly sensitive thermoelectric touch sensor based on p-type SnO\n                    <i>\n                      <sub>x<\/sub>\n                    <\/i>\n                    thin film"],"prefix":"10.1088","volume":"30","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8198-6024","authenticated-orcid":false,"given":"Eliana M F","family":"Vieira","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3485-7032","authenticated-orcid":false,"given":"J P B","family":"Silva","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8106-5815","authenticated-orcid":false,"given":"Kate\u0159ina","family":"Veltrusk\u00e1","sequence":"additional","affiliation":[]},{"given":"V","family":"Matol\u00edn","sequence":"additional","affiliation":[]},{"given":"A L","family":"Pires","sequence":"additional","affiliation":[]},{"given":"A M","family":"Pereira","sequence":"additional","affiliation":[]},{"given":"M J M","family":"Gomes","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8441-3264","authenticated-orcid":false,"given":"L M","family":"Goncalves","sequence":"additional","affiliation":[]}],"member":"266","published-online":{"date-parts":[[2019,8,9]]},"reference":[{"key":"nanoab33ddbib1","doi-asserted-by":"publisher","first-page":"698","DOI":"10.1016\/j.rser.2016.07.034","type":"journal-article","article-title":"A comprehensive review of thermoelectric technology: materials, applications, modelling and performance improvement","volume":"65","author":"Twaha","year":"2016","journal-title":"Renew. 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All rights, including for text and data mining, AI training, and similar technologies, are reserved.","name":"copyright_information","label":"Copyright Information"},{"value":"2019-04-29","name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2019-07-19","name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"value":"2019-08-09","name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}