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In particular, bit-level switchable memory that can be switched from rewritable to read-only function would allow end users to prevent important data being tampered with. However, no such switchable memory has been reported. We demonstrate that the rewritable function can be converted into read-only function by applying a sufficiently large current pulse in a U-shaped domain-wall memory, which comprises an asymmetric Pt\/Co\/Ru\/AlOx heterostructure with strong Dzyaloshinskii-Moriya interaction. Wafer-scale switchable magnetic domain-wall memory arrays on 4-inch Si\/SiO2 substrate are demonstrated. Furthermore, we confirm that the information can be stored in rewritable or read-only states at bit level according to the security needs of end users. Our work not only provides a solution for personal confidential data, but also paves the way for developing multifunctional spintronic devices.<\/jats:p>","DOI":"10.1093\/nsr\/nwad093","type":"journal-article","created":{"date-parts":[[2023,4,11]],"date-time":"2023-04-11T02:01:36Z","timestamp":1681178496000},"source":"Crossref","is-referenced-by-count":15,"title":["Electrically function-switchable magnetic domain-wall memory"],"prefix":"10.1093","volume":"10","author":[{"given":"Yu","family":"Sheng","sequence":"first","affiliation":[{"name":"State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Weiyang","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China"},{"name":"College of Materials 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