{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,1]],"date-time":"2026-06-01T15:48:20Z","timestamp":1780328900562,"version":"3.54.1"},"reference-count":44,"publisher":"Oxford University Press (OUP)","issue":"6","license":[{"start":{"date-parts":[[2025,11,27]],"date-time":"2025-11-27T00:00:00Z","timestamp":1764201600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52350301"],"award-info":[{"award-number":["52350301"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52250398"],"award-info":[{"award-number":["52250398"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["92463308"],"award-info":[{"award-number":["92463308"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62322402"],"award-info":[{"award-number":["62322402"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52188101"],"award-info":[{"award-number":["52188101"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52225206"],"award-info":[{"award-number":["52225206"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["92163205"],"award-info":[{"award-number":["92163205"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62204012"],"award-info":[{"award-number":["62204012"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52303362"],"award-info":[{"award-number":["52303362"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62304019"],"award-info":[{"award-number":["62304019"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52302162"],"award-info":[{"award-number":["52302162"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52402169"],"award-info":[{"award-number":["52402169"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62504018"],"award-info":[{"award-number":["62504018"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"publisher","award":["2022YFA1203803"],"award-info":[{"award-number":["2022YFA1203803"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"publisher","award":["2023YFF1500401"],"award-info":[{"award-number":["2023YFF1500401"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100005090","name":"Beijing Nova Program","doi-asserted-by":"publisher","award":["20220484145"],"award-info":[{"award-number":["20220484145"]}],"id":[{"id":"10.13039\/501100005090","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100005090","name":"Beijing Nova Program","doi-asserted-by":"publisher","award":["20230484478"],"award-info":[{"award-number":["20230484478"]}],"id":[{"id":"10.13039\/501100005090","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100010097","name":"China Association for Science and Technology","doi-asserted-by":"publisher","award":["2022QNRC001"],"award-info":[{"award-number":["2022QNRC001"]}],"id":[{"id":"10.13039\/100010097","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"publisher","award":["FRF-TP-22-004C2"],"award-info":[{"award-number":["FRF-TP-22-004C2"]}],"id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"publisher","award":["FRF-06500207"],"award-info":[{"award-number":["FRF-06500207"]}],"id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"publisher","award":["FRF-IDRY-23-038"],"award-info":[{"award-number":["FRF-IDRY-23-038"]}],"id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100012493","name":"Jiangsu Province Postdoctoral Science Foundation","doi-asserted-by":"publisher","award":["2023TQ0007"],"award-info":[{"award-number":["2023TQ0007"]}],"id":[{"id":"10.13039\/100012493","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100012493","name":"Jiangsu Province Postdoctoral Science Foundation","doi-asserted-by":"publisher","award":["BX20250290"],"award-info":[{"award-number":["BX20250290"]}],"id":[{"id":"10.13039\/100012493","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,3,11]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>Integrating 2D materials into 3D architectures can break through the physical limits of materials in advanced processes. However, challenges such as severe interfacial doping caused by dielectric deposition during vertical stacking processing have led to performance degradation in MoS2 3D gate-all-around (GAA) field-effect transistors (FETs), thereby severely hindering their large-scale integration. Here, we demonstrate a lossless monolithic 3D (M3D) integration process flow enabled by using an interface engineering strategy to achieve the highly uniform large-scale integration of multichannel MoS2 GAAFETs with ultrahigh current density. This strategy involves reducing interface states and dielectric doping by forming van der Waals contacts with MoS2 and creating hydrophilic surfaces for high-\u03ba dielectric deposition via an Sb2O3 layer, thereby significantly improving the performance of the GAAFETs. The statistics of 112 GAA devices exhibit record-breaking performance, including an average on-state current density of 227 \u03bcA\/\u03bcm with a peak value of &amp;gt;335 \u03bcA\/\u03bcm, and an ideal minimum subthreshold swing approaching 60 mV\/dec, all outperforming conventional back-gate transistors and other MoS2 3D FETs. Furthermore, Technology Computer Aided Design simulation confirms that gate-all-around transistors exhibit a 46% reduction in resistance capacitance delay compared with planar structures, further demonstrating enhanced gate control. This work establishes a manufacturing pathway for achieving the interface-doping-free deposition of gate dielectric layers, thereby addressing the performance-degradation issue caused by repeated processing steps in high-density M3D heterogeneous integration.<\/jats:p>","DOI":"10.1093\/nsr\/nwaf539","type":"journal-article","created":{"date-parts":[[2025,11,26]],"date-time":"2025-11-26T13:09:03Z","timestamp":1764162543000},"source":"Crossref","is-referenced-by-count":1,"title":["Large-scale gate-all-around MoS2 transistor array through lossless monolithic 3D integration"],"prefix":"10.1093","volume":"13","author":[{"given":"Chao","family":"Chen","sequence":"first","affiliation":[{"name":"Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]},{"name":"School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kuanglei","family":"Chen","sequence":"additional","affiliation":[{"name":"Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]},{"name":"School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hang","family":"Zhao","sequence":"additional","affiliation":[{"name":"Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]},{"name":"School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shucao","family":"Lu","sequence":"additional","affiliation":[{"name":"Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]},{"name":"School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jinsen","family":"Shang","sequence":"additional","affiliation":[{"name":"Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]},{"name":"School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"He","family":"Jiang","sequence":"additional","affiliation":[{"name":"Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]},{"name":"School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Li","family":"Gao","sequence":"additional","affiliation":[{"name":"Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]},{"name":"School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaoyu","family":"He","sequence":"additional","affiliation":[{"name":"Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]},{"name":"School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shihua","family":"Jiang","sequence":"additional","affiliation":[{"name":"Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]},{"name":"School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhangyi","family":"Chen","sequence":"additional","affiliation":[{"name":"Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]},{"name":"School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zheng","family":"Zhang","sequence":"additional","affiliation":[{"name":"Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]},{"name":"School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiankun","family":"Zhang","sequence":"additional","affiliation":[{"name":"Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]},{"name":"School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yue","family":"Zhang","sequence":"additional","affiliation":[{"name":"Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]},{"name":"School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing , Beijing 100083 ,","place":["China"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"286","published-online":{"date-parts":[[2025,11,27]]},"reference":[{"key":"2026031109514189400_bib1","doi-asserted-by":"publisher","first-page":"164","DOI":"10.1109\/JEDS.2017.2689738","article-title":"GAAFET versus pragmatic FinFET at the 5 nm Si-based CMOS technology node","volume":"5","author":"Huang","year":"2017","journal-title":"IEEE J Electron Devices Soc"},{"key":"2026031109514189400_bib2","doi-asserted-by":"publisher","first-page":"895","DOI":"10.1038\/s41565-024-01695-1","article-title":"The future of two-dimensional semiconductors beyond Moore\u2019s law","volume":"19","author":"Kim","year":"2024","journal-title":"Nat Nanotechnol"},{"key":"2026031109514189400_bib3","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2017.7998183","article-title":"Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET","volume-title":"Symp VLSI Technol","author":"Loubet","year":"2017"},{"key":"2026031109514189400_bib4","doi-asserted-by":"publisher","first-page":"nwae001","DOI":"10.1093\/nsr\/nwae001","article-title":"Two-dimensional semiconductor transistors and integrated circuits for advanced technology nodes","volume":"11","author":"Li","year":"2024","journal-title":"Natl Sci Rev"},{"key":"2026031109514189400_bib5","doi-asserted-by":"publisher","first-page":"138","DOI":"10.1038\/s41928-023-01112-w","article-title":"Homojunction-loaded inverters based on self-biased molybdenum disulfide transistors for sub-picowatt computing","volume":"7","author":"Wei","year":"2024","journal-title":"Nat Electron"},{"key":"2026031109514189400_bib6","doi-asserted-by":"publisher","first-page":"519","DOI":"10.1038\/s41563-025-02117-w","article-title":"Low-power 2D gate-all-around logics via epitaxial monolithic 3D integration","volume":"24","author":"Tang","year":"2025","journal-title":"Nat Mater"},{"key":"2026031109514189400_bib7","doi-asserted-by":"publisher","first-page":"654","DOI":"10.1038\/s41586-025-08759-9","article-title":"A RISC-V 32-bit microprocessor based on two-dimensional semiconductors","volume":"640","author":"Ao","year":"2025","journal-title":"Nature"},{"key":"2026031109514189400_bib8","doi-asserted-by":"publisher","first-page":"448","DOI":"10.1038\/s41565-023-01579-w","article-title":"Controllable van der Waals gaps by water adsorption","volume":"19","author":"Liu","year":"2024","journal-title":"Nat Nanotechnol"},{"key":"2026031109514189400_bib9","doi-asserted-by":"publisher","first-page":"276","DOI":"10.1038\/s41586-023-06860-5","article-title":"Three-dimensional integration of two-dimensional field-effect transistors","volume":"625","author":"Jayachandran","year":"2024","journal-title":"Nature"},{"key":"2026031109514189400_bib10","doi-asserted-by":"publisher","first-page":"870","DOI":"10.1038\/s41928-023-01055-2","article-title":"Computational event-driven vision sensors for in-sensor spiking neural networks","volume":"6","author":"Zhou","year":"2023","journal-title":"Nat Electron"},{"key":"2026031109514189400_bib11","doi-asserted-by":"publisher","first-page":"9451","DOI":"10.1021\/acsnano.5b05040","article-title":"Ultrathin two-dimensional nanomaterials","volume":"9","author":"Zhang","year":"2015","journal-title":"ACS Nano"},{"key":"2026031109514189400_bib12","doi-asserted-by":"publisher","first-page":"191","DOI":"10.1007\/s40820-025-01702-7","article-title":"A valuable and low-budget process scheme of equivalized 1 nm technology node based on 2D materials","volume":"17","author":"Shen","year":"2025","journal-title":"Nano-Micro Lett"},{"key":"2026031109514189400_bib13","doi-asserted-by":"publisher","first-page":"nwac105","DOI":"10.1093\/nsr\/nwac105","article-title":"Surface proximity effect enables layer-by-layer growth of MoS2","volume":"9","author":"Chai","year":"2022","journal-title":"Natl Sci Rev"},{"key":"2026031109514189400_bib14","doi-asserted-by":"publisher","first-page":"1324","DOI":"10.1038\/s41563-023-01671-5","article-title":"12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture","volume":"22","author":"Xia","year":"2023","journal-title":"Nat Mater"},{"key":"2026031109514189400_bib15","doi-asserted-by":"publisher","first-page":"615","DOI":"10.1038\/s41586-024-08236-9","article-title":"Growth-based monolithic 3D integration of single-crystal 2D semiconductors","volume":"636","author":"Kim","year":"2024","journal-title":"Nature"},{"key":"2026031109514189400_bib16","doi-asserted-by":"publisher","first-page":"3809","DOI":"10.1021\/acs.chemmater.6b05103","article-title":"Atomic layer deposition on 2D materials","volume":"29","author":"Kim","year":"2017","journal-title":"Chem Mater"},{"key":"2026031109514189400_bib17","doi-asserted-by":"publisher","first-page":"346","DOI":"10.1038\/s41586-024-07438-5","article-title":"Van der Waals polarity-engineered 3D integration of 2D complementary logic","volume":"630","author":"Guo","year":"2024","journal-title":"Nature"},{"key":"2026031109514189400_bib18","doi-asserted-by":"publisher","first-page":"970","DOI":"10.1038\/s41565-024-01705-2","article-title":"Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors","volume":"19","author":"Pendurthi","year":"2024","journal-title":"Nat Nanotechnol"},{"key":"2026031109514189400_bib19","doi-asserted-by":"publisher","first-page":"2314164","DOI":"10.1002\/adma.202314164","article-title":"Optimizing ultrathin 2D transistors for monolithic 3D integration: a study on directly grown nanocrystalline interconnects and buried contacts","volume":"36","author":"Bae","year":"2024","journal-title":"Adv Mater"},{"key":"2026031109514189400_bib20","doi-asserted-by":"publisher","first-page":"2304778","DOI":"10.1002\/adfm.202304778","article-title":"Two-dimensional semiconductors: from device processing to circuit integration","volume":"33","author":"Sheng","year":"2023","journal-title":"Adv Funct Mater"},{"key":"2026031109514189400_bib21","doi-asserted-by":"publisher","first-page":"19","DOI":"10.1093\/nsr\/nwu069","article-title":"Two-dimensional synthetic templates","volume":"2","author":"Huang","year":"2015","journal-title":"Natl Sci Rev"},{"key":"2026031109514189400_bib22","doi-asserted-by":"publisher","first-page":"1831","DOI":"10.1021\/acsnano.2c10737","article-title":"Van der Waals layer transfer of 2D materials for monolithic 3D electronic system integration: review and outlook","volume":"17","author":"Kim","year":"2023","journal-title":"ACS Nano"},{"key":"2026031109514189400_bib23","doi-asserted-by":"publisher","first-page":"9124","DOI":"10.1021\/acsnano.5b03309","article-title":"Impurities and electronic property variations of natural MoS2 crystal surfaces","volume":"9","author":"Addou","year":"2015","journal-title":"ACS Nano"},{"key":"2026031109514189400_bib24","doi-asserted-by":"publisher","first-page":"241","DOI":"10.1002\/cvde.201500060","article-title":"CVD growth of MoS2-based two-dimensional materials","volume":"21","author":"Liu","year":"2015","journal-title":"Chem Vap Deposition"},{"key":"2026031109514189400_bib25","doi-asserted-by":"publisher","first-page":"563","DOI":"10.1038\/s41928-019-0334-y","article-title":"Uniform and ultrathin high-\u03ba gate dielectrics for two-dimensional electronic devices","volume":"2","author":"Li","year":"2019","journal-title":"Nat Electron"},{"key":"2026031109514189400_bib26","doi-asserted-by":"publisher","first-page":"197","DOI":"10.1038\/s41563-024-02043-3","article-title":"monocrystalline dielectrics for low-power two-dimensional electronics","volume":"24","author":"Yin","year":"2025","journal-title":"Nat Mater"},{"key":"2026031109514189400_bib27","doi-asserted-by":"publisher","first-page":"160411","DOI":"10.1007\/s11432-023-3752-3","article-title":"From lab to fab: path forward for 2D material electronics","volume":"66","author":"Ning","year":"2023","journal-title":"Sci China Inf Sci"},{"key":"2026031109514189400_bib28","doi-asserted-by":"publisher","first-page":"3385","DOI":"10.1038\/s41467-020-16640-8","article-title":"Insulators for 2D nanoelectronics: the gap to bridge","volume":"11","author":"Illarionov","year":"2020","journal-title":"Nat Commun"},{"key":"2026031109514189400_bib29","doi-asserted-by":"publisher","first-page":"262","DOI":"10.1038\/s41586-022-04588-2","article-title":"High-\u03ba perovskite membranes as insulators for two-dimensional transistors","volume":"605","author":"Huang","year":"2022","journal-title":"Nature"},{"key":"2026031109514189400_bib30","doi-asserted-by":"publisher","first-page":"1078","DOI":"10.1038\/s41563-023-01626-w","article-title":"Scalable integration of hybrid high-\u03ba dielectric materials on two-dimensional semiconductors","volume":"22","author":"Xu","year":"2023","journal-title":"Nat Mater"},{"key":"2026031109514189400_bib31","first-page":"37","article-title":"Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide","volume":"6","author":"Tong","year":"2023","journal-title":"Nat Electron"},{"key":"2026031109514189400_bib32","doi-asserted-by":"publisher","first-page":"66","DOI":"10.1038\/s41586-023-05797-z","article-title":"2D Fin field-effect transistors integrated with epitaxial high-\u03ba gate oxide","volume":"616","author":"Tan","year":"2023","journal-title":"Nature"},{"key":"2026031109514189400_bib33","doi-asserted-by":"publisher","first-page":"494","DOI":"10.1038\/s44287-025-00179-1","article-title":"2D bismuth oxyselenide semiconductor for future electronics","volume":"2","author":"Tan","year":"2025","journal-title":"Nat Rev Electr Eng"},{"key":"2026031109514189400_bib34","doi-asserted-by":"publisher","first-page":"9804","DOI":"10.1021\/acs.jpcc.6b01576","article-title":"Interfacial interaction between HfO2 and MoS2: from thin films to monolayer","volume":"120","author":"Yang","year":"2016","journal-title":"J Phys Chem C"},{"key":"2026031109514189400_bib35","doi-asserted-by":"publisher","first-page":"188","DOI":"10.1038\/s41563-024-02069-7","article-title":"Two-dimensional Czochralski growth of single-crystal MoS2","volume":"24","author":"Jiang","year":"2025","journal-title":"Nat Mater"},{"key":"2026031109514189400_bib36","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM13553.2020.9371941","article-title":"High drive and low leakage current MBC FET with channel thickness 1.2 nm\/0.6 nm","volume-title":"International Electron Devices Meeting","author":"Huang","year":"2020"},{"key":"2026031109514189400_bib37","doi-asserted-by":"publisher","first-page":"2107650","DOI":"10.1002\/smll.202107650","article-title":"Wafer-scale demonstration of MBC-FET and C-FET arrays based on two-dimensional semiconductors","volume":"18","author":"Xia","year":"2022","journal-title":"Small"},{"key":"2026031109514189400_bib38","doi-asserted-by":"publisher","first-page":"2000550","DOI":"10.1002\/aelm.202000550","article-title":"Vertical integration of 2D building blocks for all-2D electronics","volume":"6","author":"Tang","year":"2020","journal-title":"Adv Electron Mater"},{"key":"2026031109514189400_bib39","doi-asserted-by":"crossref","DOI":"10.1109\/IEDM19574.2021.9720533","article-title":"Demonstration of vertically-stacked CVD monolayer channels: MoS2 nanosheets GAA-FET with Ion&gt;700 \u00b5A\/\u00b5m and MoS2\/WSe2 CFET","volume-title":"International Electron Devices Meeting","author":"Xiong","year":"2021"},{"key":"2026031109514189400_bib40","doi-asserted-by":"publisher","DOI":"10.1109\/DRC.2018.8442137","article-title":"Three-dimensional integration of multi-channel MoS2 devices for high drive current FETs","volume-title":"76th Device Research Conference","author":"Zhou","year":"2018"},{"key":"2026031109514189400_bib41","article-title":"First demonstration of GAA monolayer-MoS2 nanosheet nFET with 410 \u03bcA\u03bcm\u22121 ID 1V VD at 40 nm gate length","volume-title":"International Electron Devices Meeting","author":"Chung","year":"2022"},{"key":"2026031109514189400_bib42","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409813","article-title":"TMD FinFET with 4 nm thin body and back gate control for future low power technology","volume-title":"International Electron Devices Meeting 2015","author":"Chen","year":"2015"},{"key":"2026031109514189400_bib43","doi-asserted-by":"crossref","DOI":"10.1109\/IEDM13553.2020.9372066","article-title":"3-D self-aligned stacked NMOS-on-PMOS nanoribbon transistors for continued Moore\u2019s Law scaling","volume-title":"International Electron Devices Meeting","author":"Huang","year":"2020"},{"key":"2026031109514189400_bib44","doi-asserted-by":"publisher","first-page":"1201","DOI":"10.1038\/s41565-021-00963-8","article-title":"Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire","volume":"16","author":"Li","year":"2021","journal-title":"Nat Nanotechnol"}],"container-title":["National Science Review"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/academic.oup.com\/nsr\/advance-article-pdf\/doi\/10.1093\/nsr\/nwaf539\/65571783\/nwaf539.pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"https:\/\/academic.oup.com\/nsr\/article-pdf\/13\/6\/nwaf539\/65571783\/nwaf539.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/academic.oup.com\/nsr\/article-pdf\/13\/6\/nwaf539\/65571783\/nwaf539.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,3,11]],"date-time":"2026-03-11T13:51:52Z","timestamp":1773237112000},"score":1,"resource":{"primary":{"URL":"https:\/\/academic.oup.com\/nsr\/article\/doi\/10.1093\/nsr\/nwaf539\/8346020"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,11,27]]},"references-count":44,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2026,3,11]]}},"URL":"https:\/\/doi.org\/10.1093\/nsr\/nwaf539","relation":{},"ISSN":["2095-5138","2053-714X"],"issn-type":[{"value":"2095-5138","type":"print"},{"value":"2053-714X","type":"electronic"}],"subject":[],"published-other":{"date-parts":[[2026,3]]},"published":{"date-parts":[[2025,11,27]]},"article-number":"nwaf539"}}