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This review compares key routes, chemical vapour deposition (CVD), SiC epitaxy, arc discharge, molecular assembly and single-atom catalysts (SACs) and evaluates their mechanisms, scalability and quality bottlenecks. CVD remains the most mature and scalable approach, delivering centimetre-scale-single-crystal films through optimized substrates, roll-to-roll annealing and dry transfer, yet transfer-induced defects and wafer-scale non-uniformity persist. SiC epitaxy enables transfer-free, wafer-scale graphene with well-aligned domains, but requires high temperatures and costly wafers. Arc discharge offers catalyst-free production of crystalline graphene flakes, although monolayer yield and purity remain limited. Molecular assembly provides unmatched structural programmability and atomic precision in nanoribbons and nanographene islands, typically restricted to micrometre scales and stringent conditions. SAC-mediated growth represents a precision limit, where isolated metal atoms catalyse single-carbon insertion or removal at graphene edges, though current demonstrations remain largely single-event observations. Complementing these routes, artificial intelligence\/machine learning is increasingly used for parameter optimization, predictive modelling of domain size\/uniformity\/defects and automated quality control (convolutional neural network\/ generative modelling and YOLO-based defect detection). Overall, industrially viable, defect-free monolayer graphene will require combining scalable growth, transfer-free integration, atomic-precision and AI-enabled closed-loop optimization.<\/jats:p>","DOI":"10.1098\/rsos.260473","type":"journal-article","created":{"date-parts":[[2026,10,21]],"date-time":"2026-10-21T00:11:16Z","timestamp":1792541476000},"source":"Crossref","is-referenced-by-count":0,"title":["Advancements in bottom-up synthesis routes for monolayer graphene: a review"],"prefix":"10.1098","volume":"13","author":[{"ORCID":"https:\/\/orcid.org\/0009-0006-5698-7272","authenticated-orcid":false,"given":"Muhammad A.","family":"Awan","sequence":"first","affiliation":[{"name":"Centre for Nanotechnology, Faculty of Materials Sciences and Technology, Vysoka skola banska-Technicka univerzita Ostrava 1 , Ostrava, Moravian-Silesian Region, Czech Republic"},{"name":"Electron Beam Emergent Additive Manufacturing (EBEAM) Centre, Centre for Nanotechnology (CNT), Centre for Energy and Environmental Technologies (CEET), Vysoka skola banska-Technicka univerzita Ostrava 2 , Ostrava, Moravian-Silesian Region, Czech Republic"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Szymon","family":"Abrahamczyk","sequence":"additional","affiliation":[{"name":"Electron Beam Emergent Additive Manufacturing (EBEAM) Centre, Centre for Nanotechnology (CNT), Centre for Energy and Environmental Technologies (CEET), Vysoka skola banska-Technicka univerzita Ostrava 2 , Ostrava, Moravian-Silesian Region, Czech Republic"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Maria","family":"Hasan","sequence":"additional","affiliation":[{"name":"Electron Beam Emergent Additive Manufacturing (EBEAM) Centre, Centre for Nanotechnology (CNT), Centre for Energy and Environmental Technologies (CEET), Vysoka skola banska-Technicka univerzita Ostrava 2 , Ostrava, Moravian-Silesian Region, Czech Republic"},{"name":"Centre for Nanotechnology (CNT), Centre for Energy and Environmental Technologies (CEET), Vysoka skola banska-Technicka univerzita Ostrava 3 , Ostrava, Moravian-Silesian Region, Czech Republic"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Pavel","family":"Kuzn\u00edk","sequence":"additional","affiliation":[{"name":"Electron Beam Emergent Additive Manufacturing (EBEAM) Centre, Centre for Nanotechnology (CNT), Centre for Energy and Environmental Technologies (CEET), Vysoka skola banska-Technicka univerzita Ostrava 2 , Ostrava, Moravian-Silesian Region, Czech Republic"},{"name":"Faculty of Materials Science and Technology, Vysoka skola banska-Technicka univerzita Ostrava 4 , Ostrava, Moravian-Silesian Region, Czech Republic"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Maria","family":"Zdo\u0144czyk","sequence":"additional","affiliation":[{"name":"Electron Beam Emergent Additive Manufacturing (EBEAM) Centre, Centre for Nanotechnology (CNT), Centre for Energy and Environmental Technologies (CEET), Vysoka skola banska-Technicka univerzita Ostrava 2 , Ostrava, Moravian-Silesian Region, Czech Republic"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Alicja","family":"Bachmatiuk","sequence":"additional","affiliation":[{"name":"Electron Beam Emergent Additive Manufacturing (EBEAM) Centre, Centre for Nanotechnology (CNT), Centre for Energy and Environmental Technologies (CEET), Vysoka skola banska-Technicka univerzita Ostrava 2 , Ostrava, Moravian-Silesian Region, Czech Republic"},{"name":"Faculty of Chemistry, Wroc\u0142aw University of Science and Technology 5 , Wroc\u0142aw, Poland"},{"name":"Institute for Materials Chemistry, Leibniz Institute for Solid State and Materials Research Dresden 6 , Dresden, SN, Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mark H.","family":"R\u00fcmmeli","sequence":"additional","affiliation":[{"name":"Electron Beam Emergent Additive Manufacturing (EBEAM) Centre, Centre for Nanotechnology (CNT), Centre for Energy and Environmental Technologies (CEET), Vysoka skola banska-Technicka univerzita Ostrava 2 , Ostrava, Moravian-Silesian Region, Czech Republic"},{"name":"Institute for Materials Chemistry, Leibniz Institute for Solid State and Materials Research Dresden 6 , Dresden, SN, Germany"},{"name":"Soochow Institute for Energy and Materials Innovation, Soochow University 7 , Suzhou, People's Republic of China"},{"name":"School of Smart Materials and Future Energy, Anhui Normal University 8 , Wuhu 214002, People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"175","published-online":{"date-parts":[[2026,10,21]]},"reference":[{"key":"2026102020111029600_RSOS260473C1","doi-asserted-by":"crossref","first-page":"183","DOI":"10.1038\/nmat1849","article-title":"The rise of graphene","volume":"6","author":"Geim","year":"2007","journal-title":"Nat. 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Lett."},{"key":"2026102020111029600_RSOS260473C64","unstructured":"Huang\n              M\n            \n          . 2018Chemical vapor deposition of high quality graphene films on Cu\/Ni (111) alloy foils. PhD thesis, Ulsan National Institute of Science and Technology (UNIST), South Korea."},{"key":"2026102020111029600_RSOS260473C65","doi-asserted-by":"crossref","first-page":"3880","DOI":"10.1021\/cm4020783","article-title":"Insights into the early growth of homogeneous single-layer graphene over Ni\u2013Mo binary substrates","volume":"25","author":"R\u00fcmmeli","year":"2013","journal-title":"Chem. 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Lett."},{"key":"2026102020111029600_RSOS260473C68","doi-asserted-by":"crossref","first-page":"1900049","DOI":"10.1002\/smtd.201900049","article-title":"Transfer methods of graphene from metal substrates: a review","volume":"3","author":"Ma","year":"2019","journal-title":"Small Methods"},{"key":"2026102020111029600_RSOS260473C69","doi-asserted-by":"crossref","first-page":"6276","DOI":"10.1039\/C7CS00224F","article-title":"Direct growth of graphene on rigid and flexible substrates: progress, applications, and challenges","volume":"46","author":"Pham","year":"2017","journal-title":"Chem. Soc. 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Funct. Mater."},{"key":"2026102020111029600_RSOS260473C78","doi-asserted-by":"crossref","first-page":"3723","DOI":"10.3390\/ma15103723","article-title":"Direct wafer-scale CVD graphene growth under platinum thin-films","volume":"15","author":"Hagendoorn","year":"2022","journal-title":"Materials"},{"key":"2026102020111029600_RSOS260473C79","doi-asserted-by":"crossref","first-page":"8062","DOI":"10.1021\/nn202643t","article-title":"Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition","volume":"5","author":"Fanton","year":"2011","journal-title":"ACS Nano"},{"key":"2026102020111029600_RSOS260473C80","doi-asserted-by":"crossref","first-page":"eabk0115","DOI":"10.1126\/sciadv.abk0115","article-title":"Direct growth of wafer-scale highly oriented graphene on sapphire","volume":"7","author":"Chen","year":"2021","journal-title":"Sci. Adv."},{"key":"2026102020111029600_RSOS260473C81","unstructured":"Wood\n              J\n            \n          . 2014Large-scale growth, fluorination, clean transfer, and layering of graphene and related nanomaterials. PhD thesis, University of Illinois at Urbana-Champaign, IL."},{"key":"2026102020111029600_RSOS260473C82","doi-asserted-by":"crossref","first-page":"6321","DOI":"10.1021\/acs.chemrev.0c01191","article-title":"Strategies, status, and challenges in wafer scale single crystalline two-dimensional materials synthesis","volume":"121","author":"Zhang","year":"2021","journal-title":"Chem. Rev."},{"key":"2026102020111029600_RSOS260473C83","doi-asserted-by":"crossref","first-page":"318","DOI":"10.1021\/acs.chemrev.3c00302","article-title":"2D materials in flexible electronics: recent advances and future prospectives","volume":"124","author":"Katiyar","year":"2024","journal-title":"Chem. Rev."},{"key":"2026102020111029600_RSOS260473C84","doi-asserted-by":"crossref","first-page":"5190","DOI":"10.1039\/D3CS00817G","article-title":"Layer-by-layer thinning of two-dimensional materials","volume":"53","author":"Pham","year":"2024","journal-title":"Chem. Soc. Rev."},{"key":"2026102020111029600_RSOS260473C85","doi-asserted-by":"crossref","first-page":"1230","DOI":"10.1039\/D4NH00077C","article-title":"Art etching of graphene","volume":"9","author":"Gayathri Devi","year":"2024","journal-title":"Nanoscale Horiz."},{"key":"2026102020111029600_RSOS260473C86","doi-asserted-by":"crossref","first-page":"14 446\u201314 451","DOI":"10.1002\/anie.201984161","article-title":"Large-area synthesis of superclean graphene via selective etching of amorphous carbon with carbon dioxide","volume":"58","author":"Zhang","year":"2019","journal-title":"Angew. Chem. Int. 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Sci."},{"key":"2026102020111029600_RSOS260473C90","doi-asserted-by":"crossref","first-page":"2057","DOI":"10.1039\/C5CS00542F","article-title":"Direct preparation of high quality graphene on dielectric substrates","volume":"45","author":"Chen","year":"2016","journal-title":"Chem. Soc. Rev."},{"key":"2026102020111029600_RSOS260473C91","doi-asserted-by":"crossref","first-page":"6091","DOI":"10.1021\/acs.chemrev.7b00536","article-title":"Chemical vapor deposition growth and applications of two-dimensional materials and their heterostructures","volume":"118","author":"Cai","year":"2018","journal-title":"Chem. Rev."},{"key":"2026102020111029600_RSOS260473C92","doi-asserted-by":"crossref","first-page":"57","DOI":"10.1038\/s41699-023-00419-8","article-title":"Low T direct plasma assisted growth of graphene on sapphire and its integration in graphene\/MoS\u2082 heterostructure-based photodetectors","volume":"7","author":"Mu\u00f1oz","year":"2023","journal-title":"npj 2D Mater. 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Mater."},{"key":"2026102020111029600_RSOS260473C96","doi-asserted-by":"crossref","first-page":"5846","DOI":"10.1021\/acs.nanolett.5b01936","article-title":"Direct chemical vapor deposition-derived graphene glasses targeting wide ranged applications","volume":"15","author":"Sun","year":"2015","journal-title":"Nano Lett."},{"key":"2026102020111029600_RSOS260473C97","doi-asserted-by":"crossref","first-page":"itad010","DOI":"10.1093\/oxfmat\/itad010","article-title":"Recent progress in low-temperature CVD growth of 2D materials","volume":"3","author":"Zhang","year":"2023","journal-title":"Oxford Open Mater. Sci."},{"key":"2026102020111029600_RSOS260473C98","doi-asserted-by":"crossref","first-page":"1059","DOI":"10.3390\/nano15141059","article-title":"Recent advances in chemical vapor deposition of hexagonal boron nitride on insulating substrates","volume":"15","author":"Xu","year":"2025","journal-title":"Nanomaterials"},{"key":"2026102020111029600_RSOS260473C99","doi-asserted-by":"crossref","first-page":"2202026","DOI":"10.1002\/adfm.202202026","article-title":"Direct plasma-enhanced-chemical-vapor-deposition syntheses of vertically oriented graphene films on functional insulating substrates for wide-range applications","volume":"32","author":"Zhou","year":"2022","journal-title":"Adv. Funct. Mater."},{"key":"2026102020111029600_RSOS260473C100","doi-asserted-by":"crossref","first-page":"83","DOI":"10.1016\/j.surfrep.2011.12.001","article-title":"The surface science of graphene: metal interfaces, CVD synthesis, nanoribbons, chemical modifications, and defects","volume":"67","author":"Batzill","year":"2012","journal-title":"Surf. Sci. Rep."},{"key":"2026102020111029600_RSOS260473C101","doi-asserted-by":"crossref","first-page":"1600003","DOI":"10.1002\/advs.201600003","article-title":"Controllable synthesis of graphene by plasma-enhanced chemical vapor deposition and its related applications","volume":"3","author":"Li","year":"2016","journal-title":"Adv. Sci."},{"key":"2026102020111029600_RSOS260473C102","doi-asserted-by":"crossref","first-page":"17 548\u201317 551","DOI":"10.1021\/ja2063633","article-title":"Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates","volume":"133","author":"Chen","year":"2011","journal-title":"J. Am. Chem. Soc."},{"key":"2026102020111029600_RSOS260473C103","doi-asserted-by":"crossref","first-page":"241","DOI":"10.1016\/j.carbon.2019.03.083","article-title":"Water-assisted rapid growth of monolayer graphene films on SiO\u2082\/Si substrates","volume":"148","author":"Wei","year":"2019","journal-title":"Carbon"},{"key":"2026102020111029600_RSOS260473C104","doi-asserted-by":"crossref","first-page":"18743","DOI":"10.1038\/s41598-022-22889-4","article-title":"Atomically resolved electronic properties in single layer graphene on \u03b1-Al2O3 (0001) by chemical vapor deposition","volume":"12","author":"W\u00f6rdenweber","year":"2022","journal-title":"Sci. Rep."},{"key":"2026102020111029600_RSOS260473C105","doi-asserted-by":"crossref","first-page":"2746","DOI":"10.1002\/adma.201204904","article-title":"A platform for large-scale graphene electronics \u2013 CVD growth of single-layer graphene on CVD-grown hexagonal boron nitride","volume":"25","author":"Wang","year":"2013","journal-title":"Adv. Mater."},{"key":"2026102020111029600_RSOS260473C106","doi-asserted-by":"crossref","first-page":"992","DOI":"10.1002\/adma.201202973","article-title":"Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates","volume":"25","author":"Chen","year":"2013","journal-title":"Adv. Mater."},{"key":"2026102020111029600_RSOS260473C107","doi-asserted-by":"crossref","first-page":"3164","DOI":"10.1007\/s12274-015-0816-9","article-title":"Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation","volume":"8","author":"Song","year":"2015","journal-title":"Nano Res."},{"key":"2026102020111029600_RSOS260473C108","doi-asserted-by":"crossref","first-page":"6835","DOI":"10.1038\/ncomms7835","article-title":"Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene\u2013boron nitride heterostructures","volume":"6","author":"Gao","year":"2015","journal-title":"Nat. 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Lett."},{"key":"2026102020111029600_RSOS260473C117","doi-asserted-by":"crossref","first-page":"6574","DOI":"10.1021\/ja5022602","article-title":"Direct growth of high-quality graphene on high-\u03ba dielectric SrTiO3 substrates","volume":"136","author":"Sun","year":"2014","journal-title":"J. Am. Chem. Soc."},{"key":"2026102020111029600_RSOS260473C118","doi-asserted-by":"crossref","first-page":"917","DOI":"10.1021\/nl5036463","article-title":"Comparing graphene growth on Cu(111) versus oxidized Cu(111)","volume":"15","author":"Gottardi","year":"2015","journal-title":"Nano Lett."},{"key":"2026102020111029600_RSOS260473C119","doi-asserted-by":"crossref","first-page":"439","DOI":"10.1038\/s41928-019-0314-2","article-title":"Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices","volume":"2","author":"Kum","year":"2019","journal-title":"Nat. Electron."},{"key":"2026102020111029600_RSOS260473C120","doi-asserted-by":"crossref","first-page":"374009","DOI":"10.1088\/0022-3727\/43\/37\/374009","article-title":"Structural and electronic properties of epitaxial graphene on SiC(0001): a review of growth, characterization, transfer doping and hydrogen intercalation","volume":"43","author":"Riedl","year":"2010","journal-title":"J. Phys. D Appl. Phys."},{"key":"2026102020111029600_RSOS260473C121","doi-asserted-by":"crossref","first-page":"203","DOI":"10.1038\/nmat2382","article-title":"Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide","volume":"8","author":"Emtsev","year":"2009","journal-title":"Nat. Mater."},{"key":"2026102020111029600_RSOS260473C122","doi-asserted-by":"crossref","first-page":"6075","DOI":"10.1021\/nn301152p","article-title":"Large-area and high-quality epitaxial graphene on off-axis SiC wafers","volume":"6","author":"Ouerghi","year":"2012","journal-title":"ACS Nano"},{"key":"2026102020111029600_RSOS260473C123","doi-asserted-by":"crossref","first-page":"16 900\u201316 905","DOI":"10.1073\/pnas.1105113108","article-title":"Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide","volume":"108","author":"de Heer","year":"2011","journal-title":"Proc. Natl Acad. Sci. 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Sci."},{"key":"2026102020111029600_RSOS260473C127","doi-asserted-by":"crossref","first-page":"041002","DOI":"10.1088\/2053-1583\/3\/4\/041002","article-title":"Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC","volume":"3","author":"Kruskopf","year":"2016","journal-title":"2D Mater."},{"key":"2026102020111029600_RSOS260473C128","doi-asserted-by":"crossref","first-page":"511","DOI":"10.1016\/j.apsusc.2017.11.252","article-title":"A new direct growth method of graphene on Si-face of 6H-SiC by synergy of the inner and external carbon sources","volume":"436","author":"Yang","year":"2018","journal-title":"Appl. Surf. Sci."},{"key":"2026102020111029600_RSOS260473C129","doi-asserted-by":"crossref","first-page":"563","DOI":"10.1016\/j.carbon.2013.11.035","article-title":"Evolution of epitaxial graphene layers on 3C SiC\/Si (111) as a function of annealing temperature in UHV","volume":"68","author":"Gupta","year":"2014","journal-title":"Carbon"},{"key":"2026102020111029600_RSOS260473C130","doi-asserted-by":"crossref","first-page":"252","DOI":"10.26565\/2312-4334-2023-1-34","article-title":"Synthesis of graphene via ARC discharge and its characterization: a comparative approach","volume":"1","author":"Awoji","year":"2023","journal-title":"East Eur. J. Phys."},{"key":"2026102020111029600_RSOS260473C131","doi-asserted-by":"crossref","first-page":"661","DOI":"10.1007\/s12274-010-0027-3","article-title":"Efficient and large-scale synthesis of few-layered graphene using an arc-discharge method and conductivity studies of the resulting films","volume":"3","author":"Wu","year":"2010","journal-title":"Nano Res."},{"key":"2026102020111029600_RSOS260473C132","doi-asserted-by":"crossref","first-page":"255","DOI":"10.1016\/j.carbon.2009.09.013","article-title":"Large scale synthesis of N-doped multi-layered graphene sheets by simple arc-discharge method","volume":"48","author":"Li","year":"2010","journal-title":"Carbon"},{"key":"2026102020111029600_RSOS260473C133","doi-asserted-by":"crossref","first-page":"394","DOI":"10.1016\/j.carbon.2019.04.015","article-title":"Continuous synthesis of graphene nano-flakes by a magnetically rotating arc at atmospheric pressure","volume":"148","author":"Wang","year":"2019","journal-title":"Carbon"},{"key":"2026102020111029600_RSOS260473C134","doi-asserted-by":"crossref","first-page":"7297","DOI":"10.1039\/C8SC02818D","article-title":"Facile room temperature synthesis of large graphene sheets from simple molecules","volume":"9","author":"Lopes","year":"2018","journal-title":"Chem. Sci."},{"key":"2026102020111029600_RSOS260473C135","doi-asserted-by":"crossref","first-page":"1347129","DOI":"10.3389\/fchem.2024.1347129","article-title":"Unveiling the contemporary progress of graphene-based nanomaterials with a particular focus on the removal of contaminants from water: a comprehensive review","volume":"12","author":"Assad","year":"2024","journal-title":"Front. Chem."},{"key":"2026102020111029600_RSOS260473C136","doi-asserted-by":"crossref","first-page":"2050","DOI":"10.3390\/nano10102050","article-title":"Graphene flakes for electronic applications: DC plasma jet-assisted synthesis","volume":"10","author":"Antonova","year":"2020","journal-title":"Nanomaterials"},{"key":"2026102020111029600_RSOS260473C137","doi-asserted-by":"crossref","first-page":"4570","DOI":"10.1016\/j.carbon.2010.07.055","article-title":"The large-scale production of graphene flakes using magnetically-enhanced arc discharge between carbon electrodes","volume":"48","author":"Levchenko","year":"2010","journal-title":"Carbon"},{"key":"2026102020111029600_RSOS260473C138","doi-asserted-by":"crossref","first-page":"1074","DOI":"10.1007\/s11431-020-1734-4","article-title":"Hydrogen-induced marginal growth model for the synthesis of graphene by arc discharge","volume":"64","author":"Zhang","year":"2021","journal-title":"Sci. China Technol. Sci."},{"key":"2026102020111029600_RSOS260473C139","doi-asserted-by":"crossref","first-page":"6030","DOI":"10.1002\/adma.201505371","article-title":"Supramolecular approaches to graphene: from self-assembly to molecule-assisted liquid-phase exfoliation","volume":"28","author":"Ciesielski","year":"2016","journal-title":"Adv. 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Nanomed."},{"key":"2026102020111029600_RSOS260473C143","doi-asserted-by":"crossref","first-page":"1366542","DOI":"10.3389\/fnano.2024.1366542","article-title":"Graphene growth from photo-polymerized bi-phenylthiol self-assembled monolayers","volume":"6","author":"Zehra","year":"2024","journal-title":"Front. Nanotechnol."},{"key":"2026102020111029600_RSOS260473C144","doi-asserted-by":"crossref","first-page":"2580","DOI":"10.1021\/acsnano.2c10416","article-title":"On-surface synthesis of nanographenes and graphene nanoribbons on titanium dioxide","volume":"17","author":"Zuzak","year":"2023","journal-title":"ACS Nano"},{"key":"2026102020111029600_RSOS260473C145","doi-asserted-by":"crossref","first-page":"11 040\u201311 065","DOI":"10.1021\/acsnano.1c02985","article-title":"Preparation engineering of two-dimensional heterostructures via bottom-up growth for device applications","volume":"15","author":"Zhou","year":"2021","journal-title":"ACS Nano"},{"key":"2026102020111029600_RSOS260473C146","unstructured":"Galeotti\n              G\n            \n          . 2019On-surface formation of graphene-like materials through Ullmann coupling. PhD thesis, Institut National de la Recherche Scientifique, Universit\u00e9 du Qu\u00e9bec, Canada."},{"key":"2026102020111029600_RSOS260473C147","doi-asserted-by":"crossref","first-page":"662","DOI":"10.3390\/ma12040662","article-title":"Recent advances of hierarchical and sequential growth of macromolecular organic structures on surface","volume":"12","author":"Pigot","year":"2019","journal-title":"Materials"},{"key":"2026102020111029600_RSOS260473C148","doi-asserted-by":"crossref","first-page":"470","DOI":"10.1038\/nature09211","article-title":"Atomically precise bottom-up fabrication of graphene nanoribbons","volume":"466","author":"Cai","year":"2010","journal-title":"Nature"},{"key":"2026102020111029600_RSOS260473C149","doi-asserted-by":"crossref","first-page":"52","DOI":"10.1016\/S2095-4956(13)60006-6","article-title":"Self-assembly to monolayer graphene film with high electrical conductivity","volume":"22","author":"Lu","year":"2013","journal-title":"J. Energy Chem."},{"key":"2026102020111029600_RSOS260473C150","doi-asserted-by":"crossref","first-page":"4051","DOI":"10.1038\/s41467-018-06599-y","article-title":"Polymerization driven monomer passage through monolayer chemical vapour deposition graphene","volume":"9","author":"Zhang","year":"2018","journal-title":"Nat. Commun."},{"key":"2026102020111029600_RSOS260473C151","doi-asserted-by":"crossref","first-page":"74","DOI":"10.1021\/acsnano.7b07077","article-title":"On-surface growth dynamics of graphene nanoribbons: the role of halogen functionalization","volume":"12","author":"Di Giovannantonio","year":"2018","journal-title":"ACS Nano"},{"key":"2026102020111029600_RSOS260473C152","doi-asserted-by":"crossref","first-page":"1380","DOI":"10.1021\/acsnano.6b06405","article-title":"On-surface synthesis and characterization of 9-atom wide armchair graphene nanoribbons","volume":"11","author":"Talirz","year":"2017","journal-title":"ACS Nano"},{"key":"2026102020111029600_RSOS260473C153","doi-asserted-by":"crossref","first-page":"6222","DOI":"10.1002\/adma.201505738","article-title":"On-surface synthesis of atomically precise graphene nanoribbons","volume":"28","author":"Talirz","year":"2016","journal-title":"Adv. Mater."},{"key":"2026102020111029600_RSOS260473C154","doi-asserted-by":"crossref","first-page":"21152","DOI":"10.1038\/srep21152","article-title":"Growth of continuous monolayer graphene with millimeter-sized domains using industrially safe conditions","volume":"6","author":"Wu","year":"2016","journal-title":"Sci. Rep."},{"key":"2026102020111029600_RSOS260473C155","doi-asserted-by":"crossref","first-page":"964","DOI":"10.1039\/C8SC03780A","article-title":"Solution and on-surface synthesis of structurally defined graphene nanoribbons as a new family of semiconductors","volume":"10","author":"Narita","year":"2019","journal-title":"Chem. Sci."},{"key":"2026102020111029600_RSOS260473C156","doi-asserted-by":"crossref","first-page":"633","DOI":"10.1038\/s41467-017-00734-x","article-title":"Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons","volume":"8","author":"Llinas","year":"2017","journal-title":"Nat. Commun."},{"key":"2026102020111029600_RSOS260473C157","doi-asserted-by":"crossref","first-page":"4471","DOI":"10.1002\/adma.201101855","article-title":"Graphene: piecing it together","volume":"23","author":"R\u00fcmmeli","year":"2011","journal-title":"Adv. Mater."},{"key":"2026102020111029600_RSOS260473C158","doi-asserted-by":"crossref","first-page":"7878","DOI":"10.1039\/C6CC03316D","article-title":"Sequential bottom-up and top-down processing for the synthesis of transition metal dichalcogenide nanosheets: the case of rhenium disulfide (ReS2)","volume":"52","author":"Al-Dulaimi N","year":"2016","journal-title":"Chem. Commun."},{"key":"2026102020111029600_RSOS260473C159","doi-asserted-by":"crossref","first-page":"15 641\u201315 646","DOI":"10.1073\/pnas.1412962111","article-title":"Direct in situ observations of single Fe atom catalytic processes and anomalous diffusion at graphene edges","volume":"111","author":"Zhao","year":"2014","journal-title":"Proc. Natl Acad. Sci. USA"},{"key":"2026102020111029600_RSOS260473C160","doi-asserted-by":"crossref","first-page":"896","DOI":"10.3390\/ma11060896","article-title":"In situ room temperature electron-beam driven graphene growth from hydrocarbon contamination in a transmission electron microscope","volume":"11","author":"Rummeli","year":"2018","journal-title":"Materials"},{"key":"2026102020111029600_RSOS260473C161","doi-asserted-by":"crossref","first-page":"1800715","DOI":"10.1002\/adma.201800715","article-title":"New frontiers in electron beam\u2013driven chemistry in and around graphene","volume":"31","author":"Rummeli","year":"2019","journal-title":"Adv. Mater."},{"key":"2026102020111029600_RSOS260473C162","doi-asserted-by":"crossref","first-page":"075406","DOI":"10.1103\/PhysRevB.80.075406","article-title":"Electronic doping and scattering by transition metals on graphene","volume":"80","author":"Pi","year":"2009","journal-title":"Phys. Rev. B"},{"key":"2026102020111029600_RSOS260473C163","doi-asserted-by":"crossref","first-page":"2600","DOI":"10.1021\/nl900811r","article-title":"Anisotropic etching and nanoribbon formation in single-layer graphene","volume":"9","author":"Campos","year":"2009","journal-title":"Nano Lett."},{"key":"2026102020111029600_RSOS260473C164","doi-asserted-by":"crossref","first-page":"2689","DOI":"10.1021\/nl200928k","article-title":"Discrete dynamics of nanoparticle channelling in suspended graphene","volume":"11","author":"Booth","year":"2011","journal-title":"Nano Lett."},{"key":"2026102020111029600_RSOS260473C165","doi-asserted-by":"crossref","first-page":"695","DOI":"10.1007\/s12274-009-9073-0","article-title":"Shedding light on the crystallographic etching of multi-layer graphene at the atomic scale","volume":"2","author":"Sch\u00e4ffel","year":"2009","journal-title":"Nano Res."},{"key":"2026102020111029600_RSOS260473C166","doi-asserted-by":"crossref","first-page":"450","DOI":"10.1021\/nl403327u","article-title":"Direct observation of a long-lived single-atom catalyst chiseling atomic structures in graphene","volume":"14","author":"Wang","year":"2014","journal-title":"Nano Lett."},{"key":"2026102020111029600_RSOS260473C167","doi-asserted-by":"crossref","first-page":"1243","DOI":"10.1126\/science.aan8782","article-title":"Real-time imaging of adatom-promoted graphene growth on nickel","volume":"359","author":"Patera","year":"2018","journal-title":"Science"},{"key":"2026102020111029600_RSOS260473C168","doi-asserted-by":"crossref","first-page":"4063","DOI":"10.1021\/nn300452y","article-title":"Direct experimental evidence of metal-mediated etching of suspended graphene","volume":"6","author":"Ramasse","year":"2012","journal-title":"ACS Nano"},{"key":"2026102020111029600_RSOS260473C169","doi-asserted-by":"crossref","first-page":"213116","DOI":"10.1063\/1.4808379","article-title":"Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)","volume":"102","author":"Darakchieva","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"2026102020111029600_RSOS260473C170","first-page":"19 797\u201319 806","article-title":"Structural characterization of individual graphene sheets formed by arc discharge and their growth mechanisms","volume":"6","author":"Li","year":"2016","journal-title":"RSC Adv."},{"key":"2026102020111029600_RSOS260473C171","doi-asserted-by":"crossref","first-page":"2200077","DOI":"10.1002\/aisy.202200077","article-title":"Recent advances of graphene and related materials in artificial intelligence","volume":"4","author":"Huang","year":"2022","journal-title":"Adv. Intell. Syst."},{"key":"2026102020111029600_RSOS260473C172","doi-asserted-by":"crossref","first-page":"e2911","DOI":"10.1002\/apj.2911","article-title":"Machine learning method for determining chemical vapor deposition conditions for large-area graphene growth","volume":"18","author":"Yoshihara","year":"2023","journal-title":"Asia-Pac. J. Chem. Eng."},{"key":"2026102020111029600_RSOS260473C173","doi-asserted-by":"crossref","first-page":"430","DOI":"10.1016\/j.jiec.2021.05.031","article-title":"Machine learnings for CVD graphene analysis: from measurement to simulation of SEM images","volume":"101","author":"Hwang","year":"2021","journal-title":"J. Ind. Eng. Chem."},{"key":"2026102020111029600_RSOS260473C174","doi-asserted-by":"crossref","first-page":"890408","DOI":"10.3389\/fenvc.2022.890408","article-title":"Synthesis and applications of graphene and graphene-based nanocomposites: conventional to artificial intelligence approaches","volume":"3","author":"Tariq","year":"2022","journal-title":"Front. Environ. Chem."},{"key":"2026102020111029600_RSOS260473C175","doi-asserted-by":"crossref","first-page":"17 738","DOI":"10.1007\/s10853-025-11468-3","article-title":"Machine learning-optimized hybrid graphene\/polymer electrodes for high-performance and scalable supercapacitors","volume":"60","author":"Sabet","year":"2025","journal-title":"J. Mater. 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