{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,26]],"date-time":"2026-10-26T21:20:06Z","timestamp":1793049606638,"version":"4.5.0"},"reference-count":43,"publisher":"American Physical Society (APS)","issue":"7","license":[{"start":{"date-parts":[[2025,7,9]],"date-time":"2025-07-09T00:00:00Z","timestamp":1752019200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001659","name":"Deutsche Forschungsgemeinschaft","doi-asserted-by":"publisher","award":["463184206"],"award-info":[{"award-number":["463184206"]}],"id":[{"id":"10.13039\/501100001659","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000181","name":"Air Force Office of Scientific Research","doi-asserted-by":"publisher","award":["FA9550-19-1-0222"],"award-info":[{"award-number":["FA9550-19-1-0222"]}],"id":[{"id":"10.13039\/100000181","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["journals.aps.org"],"crossmark-restriction":true},"short-container-title":["Phys. Rev. Materials"],"accepted":{"date-parts":[[2025,6,23]]},"abstract":"<jats:p>\n                    Charge transition levels of dopants directly influence material properties, but experimental numbers are difficult to obtain. It will be demonstrated how x-ray photoelectron spectroscopy can be applied to directly determine charge transition levels of dopants in oxides. Oxidizing and reducing treatments induce changes of the Fermi level at the surface, accompanied by changes of the oxidation state of the dopant. The approach is exemplified for\n                    <a:math xmlns:a=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                      <a:mrow>\n                        <a:mn>0.2<\/a:mn>\n                        <a:mspace width=\"0.16em\"\/>\n                        <a:mi>mol<\/a:mi>\n                        <a:mspace width=\"0.16em\"\/>\n                        <a:mo>%<\/a:mo>\n                      <\/a:mrow>\n                    <\/a:math>\n                    V-doped\n                    <d:math xmlns:d=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                      <d:msub>\n                        <d:mi>BaTiO<\/d:mi>\n                        <d:mn>3<\/d:mn>\n                      <\/d:msub>\n                    <\/d:math>\n                    bulk ceramics, revealing a\n                    <e:math xmlns:e=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                      <e:msup>\n                        <e:mrow>\n                          <e:mi mathvariant=\"normal\">V<\/e:mi>\n                        <\/e:mrow>\n                        <e:mrow>\n                          <e:mn>5<\/e:mn>\n                          <e:mo>+<\/e:mo>\n                          <e:mo>\/<\/e:mo>\n                          <e:mn>3<\/e:mn>\n                          <e:mo>+<\/e:mo>\n                        <\/e:mrow>\n                      <\/e:msup>\n                    <\/e:math>\n                    charge transition at a Fermi level\n                    <g:math xmlns:g=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                      <g:mrow>\n                        <g:mo>\u2248<\/g:mo>\n                        <g:mn>0.15<\/g:mn>\n                        <g:mspace width=\"0.16em\"\/>\n                        <g:mi>eV<\/g:mi>\n                      <\/g:mrow>\n                    <\/g:math>\n                    above the conduction-band minimum. Consequently, V is present as\n                    <i:math xmlns:i=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                      <i:msup>\n                        <i:mrow>\n                          <i:mi mathvariant=\"normal\">V<\/i:mi>\n                        <\/i:mrow>\n                        <i:mrow>\n                          <i:mn>5<\/i:mn>\n                          <i:mo>+<\/i:mo>\n                        <\/i:mrow>\n                      <\/i:msup>\n                    <\/i:math>\n                    and acting as a donor in\n                    <k:math xmlns:k=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                      <k:msub>\n                        <k:mi>BaTiO<\/k:mi>\n                        <k:mn>3<\/k:mn>\n                      <\/k:msub>\n                    <\/k:math>\n                    for most experimental conditions.\n                  <\/jats:p>","DOI":"10.1103\/mg9m-hk3n","type":"journal-article","created":{"date-parts":[[2025,7,14]],"date-time":"2025-07-14T18:09:15Z","timestamp":1752516555000},"update-policy":"https:\/\/doi.org\/10.1103\/crossmark-policy","source":"Crossref","is-referenced-by-count":4,"title":["Direct determination of the charge transition level of dopants in oxides by x-ray photoelectron spectroscopy"],"prefix":"10.1103","volume":"9","author":[{"given":"Savita","family":"Chaoudhary","sequence":"first","affiliation":[{"id":[{"id":"https:\/\/ror.org\/05n911h24","id-type":"ROR","asserted-by":"publisher"}],"name":"Technical University of Darmstadt"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0003-7495-3699","authenticated-orcid":true,"given":"Andrew","family":"Aumen","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/05x2bcf33","id-type":"ROR","asserted-by":"publisher"}],"name":"Carnegie Mellon University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4005-7872","authenticated-orcid":true,"given":"Elizabeth C.","family":"Dickey","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/05x2bcf33","id-type":"ROR","asserted-by":"publisher"}],"name":"Carnegie Mellon University"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7463-1495","authenticated-orcid":true,"given":"Andreas","family":"Klein","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/05n911h24","id-type":"ROR","asserted-by":"publisher"}],"name":"Technical University of Darmstadt"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"16","published-online":{"date-parts":[[2025,7,9]]},"reference":[{"key":"mg9m-hk3nCc1R1","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.42.1","type":"journal-article"},{"key":"mg9m-hk3nCc2R1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0048697","type":"journal-article"},{"key":"mg9m-hk3nCc3R1","volume-title":"Photorefractive Materials and Their Applications 2: Materials","year":"2007","type":"book"},{"key":"mg9m-hk3nCc4R1","doi-asserted-by":"publisher","DOI":"10.1063\/1.2956327","type":"journal-article"},{"key":"mg9m-hk3nCc5R1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.48.7057","type":"journal-article"},{"key":"mg9m-hk3nCc6R1","doi-asserted-by":"publisher","DOI":"10.1111\/jace.14347","type":"journal-article"},{"key":"mg9m-hk3nCc7R1","volume-title":"Semiconductor Material and Device Characterization","author":"D.\u00a0K. 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All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright_statement","label":"Copyright statement","group":{"name":"copyright","label":"copyright"}},{"value":"2025","name":"copyright_year","label":"Copyright year","group":{"name":"copyright","label":"copyright"}},{"value":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/","name":"creative_commons_license","label":"Creative Commons license","group":{"name":"licenses","label":"Licenses"}},{"value":"\u00a92025 The authors","name":"copyright_holder","label":"Copyright holder","group":{"name":"copyright","label":"copyright"}}],"article-number":"075002"}}