{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,5]],"date-time":"2026-09-05T03:51:00Z","timestamp":1788580260545,"version":"build-2803163510"},"reference-count":25,"publisher":"International Union of Crystallography (IUCr)","issue":"4","license":[{"start":{"date-parts":[[2022,5,25]],"date-time":"2022-05-25T00:00:00Z","timestamp":1653436800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"},{"start":{"date-parts":[[2022,5,25]],"date-time":"2022-05-25T00:00:00Z","timestamp":1653436800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"content-domain":{"domain":["iucr.org","wiley.com","iucrj.org"],"crossmark-restriction":true},"short-container-title":["J Synchrotron Rad","J Synchrotron Radiat"],"accepted":{"date-parts":[[2022,5,3]]},"published-print":{"date-parts":[[2022,7,1]]},"abstract":"<jats:p>\n                    Boron carbide is a prominent material for high-brilliance synchrotron optics as it remains stable up to very high temperatures. The present study shows a significant change taking place at 550\u00b0C in the buried interface region formed between the Cr adhesive layer and the native oxide layer present on the silicon substrate. An\n                    <jats:italic>in situ<\/jats:italic>\n                    annealing study is carried out at the Indus-1 Reflectivity beamline from room temperature to 550\u00b0C (100\u00b0C steps). The studied sample is a mirror-like boron carbide thin film of 400\u2005\u00c5 thickness deposited with an adhesive layer of 20\u2005\u00c5 Cr on a silicon substrate. The corresponding changes in the film structure are recorded using angle-dependent soft X-ray reflectivity measurements carried out in the region of the boron\n                    <jats:italic>K<\/jats:italic>\n                    -edge after each annealing temperature. Analyses performed using the Parratt recursive formalism reveal that the top boron carbide layer remains intact but interface reactions take place in the buried Cr\u2013SiO\n                    <jats:sub>2<\/jats:sub>\n                    region. After 300\u00b0C the Cr layer diffuses towards the substrate. At higher temperatures of 500\u00b0C and 550\u00b0C the Cr reacts with the native oxide layer and tends to form a low-density compound of chromium oxysilicide (CrSiO\n                    <jats:sub>\n                      <jats:italic>x<\/jats:italic>\n                    <\/jats:sub>\n                    ). Depth profiling of Si and Cr distributions obtained from secondary ion mass spectroscopy measurements corroborate the layer model obtained from the soft X-ray reflectivity analyses. Details of the interface reaction taking place near the substrate region of boron carbide\/Cr sample are discussed.\n                  <\/jats:p>","DOI":"10.1107\/s1600577522004738","type":"journal-article","created":{"date-parts":[[2022,5,26]],"date-time":"2022-05-26T09:38:06Z","timestamp":1653557886000},"page":"978-984","update-policy":"https:\/\/doi.org\/10.1107\/cm_01","source":"Crossref","is-referenced-by-count":5,"title":["Study of interface reaction in a B\n                    <sub>4<\/sub>\n                    C\/Cr mirror at elevated temperature using soft X-ray reflectivity"],"prefix":"10.1107","volume":"29","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-5799-8666","authenticated-orcid":true,"given":"Mohammed H.","family":"Modi","sequence":"first","affiliation":[{"id":[{"id":"https:\/\/ror.org\/02378jc90","id-type":"ROR","asserted-by":"publisher"}],"department":["Soft X-ray Applications Laboratory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shruti","family":"Gupta","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/02378jc90","id-type":"ROR","asserted-by":"publisher"}],"department":["Soft X-ray Applications Laboratory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Praveen K.","family":"Yadav","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/02378jc90","id-type":"ROR","asserted-by":"publisher"}],"department":["Soft X-ray Applications Laboratory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Rajkumar","family":"Gupta","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/02378jc90","id-type":"ROR","asserted-by":"publisher"}],"department":["Soft X-ray Applications Laboratory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1836-2945","authenticated-orcid":true,"given":"Aniruddha","family":"Bose","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/02378jc90","id-type":"ROR","asserted-by":"publisher"}],"department":["Superconducting Proton Linac Section"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chandrachur","family":"Mukherjee","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/02378jc90","id-type":"ROR","asserted-by":"publisher"}],"department":["Optical Coating Laboratory"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Philippe","family":"Jonnard","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/02en5vm52","id-type":"ROR","asserted-by":"publisher"}],"department":["Faculte des Sciences et Ing\u00e9nierie, UMR CNRS, Laboratoire de Chimie Physique-Matiere et Rayonnement"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mourad","family":"Idir","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/02ex6cf31","id-type":"ROR","asserted-by":"publisher"}],"department":["National Synchrotron Light Source II (NSLS-II)"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"329","published-online":{"date-parts":[[2022,5,25]]},"reference":[{"key":"ve5157_bb1","doi-asserted-by":"crossref","first-page":"336","DOI":"10.1038\/nphoton.2007.76","volume":"1","author":"Ackermann","year":"2007","journal-title":"Nat. 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