{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T14:47:43Z","timestamp":1729608463440,"version":"3.28.0"},"reference-count":7,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2012,1]]},"DOI":"10.1109\/3dic.2012.6262984","type":"proceedings-article","created":{"date-parts":[[2012,8,22]],"date-time":"2012-08-22T10:48:43Z","timestamp":1345632523000},"page":"1-4","source":"Crossref","is-referenced-by-count":0,"title":["Low temperature through-Si via fabrication using electroless deposition"],"prefix":"10.1109","author":[{"given":"Fumihiro","family":"Inoue","sequence":"first","affiliation":[]},{"given":"Harold","family":"Philipsen","sequence":"additional","affiliation":[]},{"given":"Alex","family":"Radisic","sequence":"additional","affiliation":[]},{"given":"Silvia","family":"Armini","sequence":"additional","affiliation":[]},{"given":"Peter","family":"Leunissen","sequence":"additional","affiliation":[]},{"given":"Hiroshi","family":"Miyake","sequence":"additional","affiliation":[]},{"given":"Ryohei","family":"Arima","sequence":"additional","affiliation":[]},{"given":"Tomohiro","family":"Shimizu","sequence":"additional","affiliation":[]},{"given":"Toshiaki","family":"Ito","sequence":"additional","affiliation":[]},{"given":"Hirofumi","family":"Seki","sequence":"additional","affiliation":[]},{"given":"Yuko","family":"Shinozaki","sequence":"additional","affiliation":[]},{"given":"Tomohiko","family":"Yamamoto","sequence":"additional","affiliation":[]},{"given":"Shoso","family":"Shingubara","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"3","volume":"19","author":"beyne","year":"2006","journal-title":"IEEE Symposium on VLSI Technology Systems and Applications (VLSI-TSA) Proceedings of Technical Papers IEEE"},{"key":"2","first-page":"1","author":"beyne","year":"2006","journal-title":"Proceedings of the IEEE International Interconnect Technology Conference (IITC) IEEE"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.884079"},{"key":"7","doi-asserted-by":"crossref","first-page":"6245","DOI":"10.1016\/j.electacta.2011.02.078","volume":"56","author":"inoue","year":"2011","journal-title":"Electrochim Acta"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1149\/1.1707029"},{"key":"5","doi-asserted-by":"crossref","DOI":"10.1149\/1.1421747","volume":"5","author":"osaka","year":"2002","journal-title":"Electrochem Solid-State Lett"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1149\/1.3518439"}],"event":{"name":"2011 IEEE International 3D Systems Integration Conference (3DIC)","start":{"date-parts":[[2012,1,31]]},"location":"Osaka","end":{"date-parts":[[2012,2,2]]}},"container-title":["2011 IEEE International 3D Systems Integration Conference (3DIC), 2011 IEEE International"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6253019\/6262941\/06262984.pdf?arnumber=6262984","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,20]],"date-time":"2017-06-20T19:09:07Z","timestamp":1497985747000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6262984\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,1]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/3dic.2012.6262984","relation":{},"subject":[],"published":{"date-parts":[[2012,1]]}}}